JP2011223043A - 半導体発光素子、および半導体発光素子を作製する方法 - Google Patents

半導体発光素子、および半導体発光素子を作製する方法 Download PDF

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Publication number
JP2011223043A
JP2011223043A JP2011173949A JP2011173949A JP2011223043A JP 2011223043 A JP2011223043 A JP 2011223043A JP 2011173949 A JP2011173949 A JP 2011173949A JP 2011173949 A JP2011173949 A JP 2011173949A JP 2011223043 A JP2011223043 A JP 2011223043A
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gallium nitride
less
region
well layer
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JP2011223043A5 (https=
Inventor
Katsushi Akita
勝史 秋田
Yusuke Yoshizumi
祐介 善積
Takashi Kyono
孝史 京野
Hiroyuki Kitabayashi
弘之 北林
Koji Katayama
浩二 片山
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2011173949A priority Critical patent/JP2011223043A/ja
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Publication of JP2011223043A5 publication Critical patent/JP2011223043A5/ja
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JP2011173949A 2011-08-09 2011-08-09 半導体発光素子、および半導体発光素子を作製する方法 Pending JP2011223043A (ja)

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JP2011173949A JP2011223043A (ja) 2011-08-09 2011-08-09 半導体発光素子、および半導体発光素子を作製する方法

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JP2011173949A JP2011223043A (ja) 2011-08-09 2011-08-09 半導体発光素子、および半導体発光素子を作製する方法

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JP2005326270A Division JP5048236B2 (ja) 2005-11-10 2005-11-10 半導体発光素子、および半導体発光素子を作製する方法

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JP2011223043A true JP2011223043A (ja) 2011-11-04
JP2011223043A5 JP2011223043A5 (https=) 2012-08-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113451455A (zh) * 2020-11-26 2021-09-28 重庆康佳光电技术研究院有限公司 Led外延的制备方法及led外延结构与led芯片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168471A (ja) * 1998-12-15 2001-06-22 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2002124702A (ja) * 2000-10-18 2002-04-26 Sharp Corp 窒化ガリウム系半導体発光素子
JP2003133649A (ja) * 2001-10-29 2003-05-09 Sharp Corp 窒化物半導体レーザ素子及び窒化物半導体レーザ素子の製造方法及びこれを備えた半導体光学装置
JP2005129923A (ja) * 2003-10-02 2005-05-19 Showa Denko Kk 窒化物半導体、それを用いた発光素子、発光ダイオード、レーザー素子およびランプ並びにそれらの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168471A (ja) * 1998-12-15 2001-06-22 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2002124702A (ja) * 2000-10-18 2002-04-26 Sharp Corp 窒化ガリウム系半導体発光素子
JP2003133649A (ja) * 2001-10-29 2003-05-09 Sharp Corp 窒化物半導体レーザ素子及び窒化物半導体レーザ素子の製造方法及びこれを備えた半導体光学装置
JP2005129923A (ja) * 2003-10-02 2005-05-19 Showa Denko Kk 窒化物半導体、それを用いた発光素子、発光ダイオード、レーザー素子およびランプ並びにそれらの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113451455A (zh) * 2020-11-26 2021-09-28 重庆康佳光电技术研究院有限公司 Led外延的制备方法及led外延结构与led芯片
CN113451455B (zh) * 2020-11-26 2022-05-03 重庆康佳光电技术研究院有限公司 Led外延的制备方法及led外延结构与led芯片

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