JP2011223043A5 - - Google Patents

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Publication number
JP2011223043A5
JP2011223043A5 JP2011173949A JP2011173949A JP2011223043A5 JP 2011223043 A5 JP2011223043 A5 JP 2011223043A5 JP 2011173949 A JP2011173949 A JP 2011173949A JP 2011173949 A JP2011173949 A JP 2011173949A JP 2011223043 A5 JP2011223043 A5 JP 2011223043A5
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JP
Japan
Prior art keywords
gallium nitride
region
less
layer
dislocation density
Prior art date
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Pending
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JP2011173949A
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English (en)
Japanese (ja)
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JP2011223043A (ja
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Priority to JP2011173949A priority Critical patent/JP2011223043A/ja
Priority claimed from JP2011173949A external-priority patent/JP2011223043A/ja
Publication of JP2011223043A publication Critical patent/JP2011223043A/ja
Publication of JP2011223043A5 publication Critical patent/JP2011223043A5/ja
Pending legal-status Critical Current

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JP2011173949A 2011-08-09 2011-08-09 半導体発光素子、および半導体発光素子を作製する方法 Pending JP2011223043A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011173949A JP2011223043A (ja) 2011-08-09 2011-08-09 半導体発光素子、および半導体発光素子を作製する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011173949A JP2011223043A (ja) 2011-08-09 2011-08-09 半導体発光素子、および半導体発光素子を作製する方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005326270A Division JP5048236B2 (ja) 2005-11-10 2005-11-10 半導体発光素子、および半導体発光素子を作製する方法

Publications (2)

Publication Number Publication Date
JP2011223043A JP2011223043A (ja) 2011-11-04
JP2011223043A5 true JP2011223043A5 (https=) 2012-08-23

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ID=45039516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011173949A Pending JP2011223043A (ja) 2011-08-09 2011-08-09 半導体発光素子、および半導体発光素子を作製する方法

Country Status (1)

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JP (1) JP2011223043A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113451455B (zh) * 2020-11-26 2022-05-03 重庆康佳光电技术研究院有限公司 Led外延的制备方法及led外延结构与led芯片

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3705047B2 (ja) * 1998-12-15 2005-10-12 日亜化学工業株式会社 窒化物半導体発光素子
JP2002124702A (ja) * 2000-10-18 2002-04-26 Sharp Corp 窒化ガリウム系半導体発光素子
JP3910041B2 (ja) * 2001-10-29 2007-04-25 シャープ株式会社 窒化物半導体レーザ素子及びこれを備えた半導体光学装置
JP2005129923A (ja) * 2003-10-02 2005-05-19 Showa Denko Kk 窒化物半導体、それを用いた発光素子、発光ダイオード、レーザー素子およびランプ並びにそれらの製造方法

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