JP2011222548A5 - - Google Patents

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Publication number
JP2011222548A5
JP2011222548A5 JP2010086313A JP2010086313A JP2011222548A5 JP 2011222548 A5 JP2011222548 A5 JP 2011222548A5 JP 2010086313 A JP2010086313 A JP 2010086313A JP 2010086313 A JP2010086313 A JP 2010086313A JP 2011222548 A5 JP2011222548 A5 JP 2011222548A5
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JP
Japan
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layer
region
temperature detection
detection unit
electrode
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JP2010086313A
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English (en)
Japanese (ja)
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JP5533154B2 (ja
JP2011222548A (ja
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Priority to JP2010086313A priority Critical patent/JP5533154B2/ja
Priority claimed from JP2010086313A external-priority patent/JP5533154B2/ja
Priority to US13/064,424 priority patent/US8582615B2/en
Priority to CN2011100732877A priority patent/CN102214896A/zh
Publication of JP2011222548A publication Critical patent/JP2011222548A/ja
Publication of JP2011222548A5 publication Critical patent/JP2011222548A5/ja
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Publication of JP5533154B2 publication Critical patent/JP5533154B2/ja
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JP2010086313A 2010-04-02 2010-04-02 半導体発光装置 Active JP5533154B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010086313A JP5533154B2 (ja) 2010-04-02 2010-04-02 半導体発光装置
US13/064,424 US8582615B2 (en) 2010-04-02 2011-03-24 Semiconductor light-emitting device
CN2011100732877A CN102214896A (zh) 2010-04-02 2011-03-25 半导体发光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010086313A JP5533154B2 (ja) 2010-04-02 2010-04-02 半導体発光装置

Publications (3)

Publication Number Publication Date
JP2011222548A JP2011222548A (ja) 2011-11-04
JP2011222548A5 true JP2011222548A5 (enExample) 2013-04-25
JP5533154B2 JP5533154B2 (ja) 2014-06-25

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ID=44709638

Family Applications (1)

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JP2010086313A Active JP5533154B2 (ja) 2010-04-02 2010-04-02 半導体発光装置

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US (1) US8582615B2 (enExample)
JP (1) JP5533154B2 (enExample)
CN (1) CN102214896A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020031120A (ja) 2018-08-22 2020-02-27 ソニーセミコンダクタソリューションズ株式会社 光源装置、温度検出方法、センシングモジュール
JP7482785B2 (ja) * 2018-11-16 2024-05-14 ソニーセミコンダクタソリューションズ株式会社 面発光レーザ装置の駆動方法および面発光レーザ装置
WO2022253740A1 (en) * 2021-06-01 2022-12-08 Signify Holding B.V. Control of laser sources

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568686A (en) * 1978-11-17 1980-05-23 Matsushita Electric Ind Co Ltd Semiconductor light emission device
US7428995B1 (en) * 1993-10-25 2008-09-30 Symbol Technologies, Inc. Scanning devices and methods using surface emitting laser diodes
JP2000022266A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体発光素子
JP3505509B2 (ja) * 2000-12-28 2004-03-08 株式会社東芝 半導体発光素子と半導体発光装置及び半導体発光素子の変調方法
US6728280B1 (en) * 2001-03-12 2004-04-27 Honeywell International Inc. Apparatus and method providing a balancing load to a laser differential drive circuit
JP4704661B2 (ja) * 2002-03-20 2011-06-15 富士ゼロックス株式会社 発光素子駆動装置及び発光素子駆動システム
US20030210873A1 (en) * 2002-05-09 2003-11-13 Moretti Anthony L. Passive alignment connection for fiber optics incorporating VCSEL emitters
JP2004006463A (ja) * 2002-05-31 2004-01-08 Katsumi Yoshino 温度制御方法
JP2008306118A (ja) 2007-06-11 2008-12-18 Sony Corp 面発光型半導体レーザ
JP5279393B2 (ja) * 2008-07-31 2013-09-04 キヤノン株式会社 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器
JP2010056219A (ja) * 2008-08-27 2010-03-11 Stanley Electric Co Ltd 半導体発光素子のジャンクション温度の制御方法

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