JP5533154B2 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

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Publication number
JP5533154B2
JP5533154B2 JP2010086313A JP2010086313A JP5533154B2 JP 5533154 B2 JP5533154 B2 JP 5533154B2 JP 2010086313 A JP2010086313 A JP 2010086313A JP 2010086313 A JP2010086313 A JP 2010086313A JP 5533154 B2 JP5533154 B2 JP 5533154B2
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Japan
Prior art keywords
semiconductor
layer
temperature detection
detection unit
light emitting
Prior art date
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Active
Application number
JP2010086313A
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English (en)
Japanese (ja)
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JP2011222548A5 (enExample
JP2011222548A (ja
Inventor
修 前田
政貴 汐先
佐藤　　進
孝博 荒木田
史朗 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010086313A priority Critical patent/JP5533154B2/ja
Priority to US13/064,424 priority patent/US8582615B2/en
Priority to CN2011100732877A priority patent/CN102214896A/zh
Publication of JP2011222548A publication Critical patent/JP2011222548A/ja
Publication of JP2011222548A5 publication Critical patent/JP2011222548A5/ja
Application granted granted Critical
Publication of JP5533154B2 publication Critical patent/JP5533154B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2010086313A 2010-04-02 2010-04-02 半導体発光装置 Active JP5533154B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010086313A JP5533154B2 (ja) 2010-04-02 2010-04-02 半導体発光装置
US13/064,424 US8582615B2 (en) 2010-04-02 2011-03-24 Semiconductor light-emitting device
CN2011100732877A CN102214896A (zh) 2010-04-02 2011-03-25 半导体发光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010086313A JP5533154B2 (ja) 2010-04-02 2010-04-02 半導体発光装置

Publications (3)

Publication Number Publication Date
JP2011222548A JP2011222548A (ja) 2011-11-04
JP2011222548A5 JP2011222548A5 (enExample) 2013-04-25
JP5533154B2 true JP5533154B2 (ja) 2014-06-25

Family

ID=44709638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010086313A Active JP5533154B2 (ja) 2010-04-02 2010-04-02 半導体発光装置

Country Status (3)

Country Link
US (1) US8582615B2 (enExample)
JP (1) JP5533154B2 (enExample)
CN (1) CN102214896A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020031120A (ja) 2018-08-22 2020-02-27 ソニーセミコンダクタソリューションズ株式会社 光源装置、温度検出方法、センシングモジュール
JP7482785B2 (ja) * 2018-11-16 2024-05-14 ソニーセミコンダクタソリューションズ株式会社 面発光レーザ装置の駆動方法および面発光レーザ装置
WO2022253740A1 (en) * 2021-06-01 2022-12-08 Signify Holding B.V. Control of laser sources

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568686A (en) * 1978-11-17 1980-05-23 Matsushita Electric Ind Co Ltd Semiconductor light emission device
US7428995B1 (en) * 1993-10-25 2008-09-30 Symbol Technologies, Inc. Scanning devices and methods using surface emitting laser diodes
JP2000022266A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体発光素子
JP3505509B2 (ja) * 2000-12-28 2004-03-08 株式会社東芝 半導体発光素子と半導体発光装置及び半導体発光素子の変調方法
US6728280B1 (en) * 2001-03-12 2004-04-27 Honeywell International Inc. Apparatus and method providing a balancing load to a laser differential drive circuit
JP4704661B2 (ja) * 2002-03-20 2011-06-15 富士ゼロックス株式会社 発光素子駆動装置及び発光素子駆動システム
US20030210873A1 (en) * 2002-05-09 2003-11-13 Moretti Anthony L. Passive alignment connection for fiber optics incorporating VCSEL emitters
JP2004006463A (ja) * 2002-05-31 2004-01-08 Katsumi Yoshino 温度制御方法
JP2008306118A (ja) 2007-06-11 2008-12-18 Sony Corp 面発光型半導体レーザ
JP5279393B2 (ja) * 2008-07-31 2013-09-04 キヤノン株式会社 面発光レーザおよびその製造方法、面発光レーザアレイの製造方法、および面発光レーザアレイを備えている光学機器
JP2010056219A (ja) * 2008-08-27 2010-03-11 Stanley Electric Co Ltd 半導体発光素子のジャンクション温度の制御方法

Also Published As

Publication number Publication date
JP2011222548A (ja) 2011-11-04
US8582615B2 (en) 2013-11-12
CN102214896A (zh) 2011-10-12
US20110243174A1 (en) 2011-10-06

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