JP2011218364A - 接続材料半導体装置及びその製造方法 - Google Patents
接続材料半導体装置及びその製造方法 Download PDFInfo
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Abstract
パワーモジュールの大容量化に伴う素子接続部の温度上昇に伴い、濡れ性がよく、高耐熱な鉛フリーの接続材料が必要となっていた。
【解決手段】
Sn11bとAl12を主成分とする合金箔13でありAl含有率が40mass%以下の合金箔13の最表層にSn系層11aをクラッドまたは加圧成形して、合金表層の酸化膜を除去する。このときに、合金箔のAl含有率を40mass%以下とする。これにより、SnとAlの分離を抑えて、濡れ性が確保でき、耐熱性が高く、軽量な接続材料および接続ができる。
【選択図】 図7
Description
(比較例3−6)
Claims (14)
- Al含有率が40mass%以下のSn-Al系合金層と、
前記合金層の最表面に設けられたSn系層とを備えたことを特徴とする接続材料。 - 請求項1記載の接続材料において、
前記Sn層は、
前記Sn-Al系合金層の主面に設けられた第一のSn層と、
前記第一のSn系層とは反対側の前記Sn-Al系合金層の主面に設けられた第二のSn層とを備えたことを特徴とする接続材料。 - 請求項1または請求項2において、
前記Sn-Al系合金層と前記Sn系層とはクラッドまたは加圧成形により接続されていることを特徴とする接続材料。 - 請求項1記載の接続材料において、
前記Sn-Al系合金層のAl含有率が10〜40mass%であることを特徴とする接続材料。 - 請求項1記載の接続材料において、
前記Sn-Al系合金層がSn-10〜40Al mass%であることを特徴とする接続材料。 - 請求項4記載の接続材料において、
前記Sn-Al系合金層がZn含有率が0.01〜9mass%であることを特徴とする接続材料。 - 請求項4記載の接続材料において、
前記Sn-Al系合金層がIn含有率が0.01〜7mass%であることを特徴とする接続材料。 - 請求項1から7のいずれかに記載の接続材料において、
前記Sn系層のSn含有率が95〜100 mass%であることを特徴とする接続材料。 - 請求項1から8のいずれかに記載の接続材料において、
Sn-Al系合金層とSn系層の全界面に存在するAl酸化物界面の割合が25%以下であることを特徴とする接続材料。 - 請求項1から6記載の接続材料において、
Sn-Al系合金箔の上下にSn箔を重ねて最終加工度80%以上でクラッド圧延したことを特徴とする接続材料。 - 第1の部材と、第2の部材と、前記第1の部材と前記第2の部算とを接続するはんだ接続部とを備えた半導体装置において、
前記はんだ接続部のSn含有率が60〜90mass%、Al含有率が10〜40mass%であることを特徴とする半導体装置。 - 前記第1の部材は半導体素子であり、前記第2の部材は、基板またはリードであることを特徴とする半導体装置の製造方法。
- Sn層にAl層を加熱溶融させ、Al含有率が10〜40mass%のSn-Al層を形成する工程と、
前記形成したSn-Al層の表裏面にそれぞれSn層をクラッドするまたは加圧成形により形成する工程とを含む接続材料の製造方法。 - 請求項1乃至10のいずれかに記載の接続材料を、第1の部材と第2の部材との間に設ける工程と、
前記接続材料を加熱し、前記第1の部材と前記第2の部材とを接続する工程と、
を含む半導体装置の製造方法。
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US9393645B2 (en) | 2010-08-31 | 2016-07-19 | Hitachi Metals, Ltd. | Junction material, manufacturing method thereof, and manufacturing method of junction structure |
JP2016201359A (ja) * | 2015-04-09 | 2016-12-01 | コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ | 電気化学的発電装置の電極の切断方法 |
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JP2006205198A (ja) * | 2005-01-27 | 2006-08-10 | Matsushita Electric Ind Co Ltd | はんだ材料及びその製造方法 |
JP2009142890A (ja) * | 2007-12-18 | 2009-07-02 | Mitsubishi Electric Corp | 積層はんだ材およびそれを用いたはんだ付方法ならびにはんだ接合部 |
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JP2005125360A (ja) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 高温はんだ材料,高温はんだ材料評価方法および電気/電子機器ならびにはんだ接合構造体 |
JP2006205198A (ja) * | 2005-01-27 | 2006-08-10 | Matsushita Electric Ind Co Ltd | はんだ材料及びその製造方法 |
JP2009147111A (ja) * | 2007-12-14 | 2009-07-02 | Fuji Electric Device Technology Co Ltd | 接合材、その製造方法および半導体装置 |
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US9393645B2 (en) | 2010-08-31 | 2016-07-19 | Hitachi Metals, Ltd. | Junction material, manufacturing method thereof, and manufacturing method of junction structure |
JP2016201359A (ja) * | 2015-04-09 | 2016-12-01 | コミサリア ア レネルジ アトミク エ オウ エネルジ アルタナティヴ | 電気化学的発電装置の電極の切断方法 |
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