JP2011187692A - 半導体発光装置及びその製造方法 - Google Patents
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Abstract
【解決手段】半導体発光装置は、第1の主面と、第1の主面に対する反対側に設けられた第2の主面と、第2の主面に選択的に設けられた凸部と、第2の主面から第1の主面に達して形成された溝とを有する第1の半導体層と、第1の半導体層の凸部に積層され、発光層を含む第2の半導体層と、第1の半導体層の第2の主面及び溝の側面に設けられた第1の電極と、第2の半導体層における第1の半導体層に対する反対側の面に設けられた第2の電極と、第1の電極における2の主面に対する反対側の面に設けられた第1の配線と、第2の電極における第2の半導体層に対する反対側の面に設けられた第2の配線と、を備えた。
【選択図】図3
Description
また、本発明の他の一態様によれば、基板上に、第1の半導体層と、発光層を含む第2の半導体層とを順に形成する工程と、前記第2の半導体層及び前記第1の半導体層の一部を選択的に除去し、前記第1の半導体層における前記基板に対する反対側の面に、前記第1の半導体層と前記第2の半導体層との積層構造を有する凸部と、前記第1の半導体層が露出された凹部と、を形成する工程と、前記凹部の底面から前記基板に達する溝を形成する工程と、前記凹部の底面及び前記溝の側面に、第1の電極を形成する工程と、前記凸部の前記第2の半導体層における前記第1の半導体層に対する反対側の面に、第2の電極を形成する工程と、前記第1の電極における前記第1の半導体層に対する反対側の面に、第1の配線を形成する工程と、前記第2の電極における前記第2の半導体層に対する反対側の面に、第2の配線を形成する工程と、を備えたことを特徴とする半導体発光装置の製造方法が提供される。
また、本発明のさらに他の一態様によれば、基板上に、第1の半導体層と、発光層を含む第2の半導体層とを順に形成する工程と、前記第2の半導体層及び前記第1の半導体層を貫通し、前記基板に達する溝を形成する工程と、前記溝の周辺の前記第2の半導体層及び前記第1の半導体層の一部を選択的に除去し、前記第1の半導体層における前記基板に対する反対側の面に、前記第1の半導体層と前記第2の半導体層との積層構造を有する凸部と、前記溝の周辺で前記第1の半導体層が露出された凹部と、を形成する工程と、前記凹部の底面及び前記溝の側面に、第1の電極を形成する工程と、前記凸部の前記第2の半導体層における前記第1の半導体層に対する反対側の面に、第2の電極を形成する工程と、前記第1の電極における前記第1の半導体層に対する反対側の面に、第1の配線を形成する工程と、前記第2の電極における前記第2の半導体層に対する反対側の面に、第2の配線を形成する工程と、を備えたことを特徴とする半導体発光装置の製造方法が提供される。
図1は、本実施形態に係る半導体発光装置の模式断面図である。
図4(a)は、図3の平面図に対応する。
図4(b)は、n側配線17、p側配線18、n側金属ピラー19およびp側金属ピラー20の平面レイアウトの一例を示す平面図である。
図1は、図4(a)におけるA−A断面に対応する。また、図8(b)は、図4(a)におけるB−B断面に対応する。但し、図8(b)は基板10が除去される前の状態を表す。
Claims (5)
- 第1の主面と、前記第1の主面に対する反対側に設けられた第2の主面と、前記第2の主面に選択的に設けられた凸部と、前記第2の主面から前記第1の主面に達して形成された溝と、を有する第1の半導体層と、
前記第1の半導体層の前記凸部に積層され、発光層を含む第2の半導体層と、
前記第1の半導体層の前記第2の主面及び前記溝の側面に設けられた第1の電極と、
前記第2の半導体層における前記第1の半導体層に対する反対側の面に設けられた第2の電極と、
前記第1の電極における前記2の主面に対する反対側の面に設けられた第1の配線と、
前記第2の電極における前記第2の半導体層に対する反対側の面に設けられた第2の配線と、
を備えたことを特徴とする半導体発光装置。 - 前記第1の電極は、前記溝の底部にも設けられたことを特徴とする請求項1記載の半導体発光装置。
- 前記第1の配線における前記第1の電極に対する反対側の面に設けられた第1の金属ピラーと、前記第2の配線における前記第2の電極に対する反対側の面に設けられた第2の金属ピラーと、
前記第1の金属ピラー及び前記第2の金属ピラーのそれぞれの周囲を覆う樹脂と、
をさらに備えたことを特徴とする請求項1または2に記載の半導体発光装置。 - 基板上に、第1の半導体層と、発光層を含む第2の半導体層とを順に形成する工程と、
前記第2の半導体層及び前記第1の半導体層の一部を選択的に除去し、前記第1の半導体層における前記基板に対する反対側の面に、前記第1の半導体層と前記第2の半導体層との積層構造を有する凸部と、前記第1の半導体層が露出された凹部と、を形成する工程と、
前記凹部の底面から前記基板に達する溝を形成する工程と、
前記凹部の底面及び前記溝の側面に、第1の電極を形成する工程と、
前記凸部の前記第2の半導体層における前記第1の半導体層に対する反対側の面に、第2の電極を形成する工程と、
前記第1の電極における前記第1の半導体層に対する反対側の面に、第1の配線を形成する工程と、
前記第2の電極における前記第2の半導体層に対する反対側の面に、第2の配線を形成する工程と、
を備えたことを特徴とする半導体発光装置の製造方法。 - 基板上に、第1の半導体層と、発光層を含む第2の半導体層とを順に形成する工程と、
前記第2の半導体層及び前記第1の半導体層を貫通し、前記基板に達する溝を形成する工程と、
前記溝の周辺の前記第2の半導体層及び前記第1の半導体層の一部を選択的に除去し、前記第1の半導体層における前記基板に対する反対側の面に、前記第1の半導体層と前記第2の半導体層との積層構造を有する凸部と、前記溝の周辺で前記第1の半導体層が露出された凹部と、を形成する工程と、
前記凹部の底面及び前記溝の側面に、第1の電極を形成する工程と、
前記凸部の前記第2の半導体層における前記第1の半導体層に対する反対側の面に、第2の電極を形成する工程と、
前記第1の電極における前記第1の半導体層に対する反対側の面に、第1の配線を形成する工程と、
前記第2の電極における前記第2の半導体層に対する反対側の面に、第2の配線を形成する工程と、
を備えたことを特徴とする半導体発光装置の製造方法。
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JP2010051506A JP5197654B2 (ja) | 2010-03-09 | 2010-03-09 | 半導体発光装置及びその製造方法 |
US12/849,098 US8766310B2 (en) | 2010-03-09 | 2010-08-03 | Semiconductor light emitting device and method for manufacturing same |
EP10173219A EP2365542A1 (en) | 2010-03-09 | 2010-08-18 | Semiconductor light emitting device and method for manufacturing same |
EP14171330.5A EP2797125B1 (en) | 2010-03-09 | 2010-08-18 | Semiconductor light emitting device |
TW099130200A TWI481075B (zh) | 2010-03-09 | 2010-09-07 | 半導體發光裝置及其製造方法 |
US14/279,864 US9136437B2 (en) | 2010-03-09 | 2014-05-16 | Semiconductor light emitting device and method for manufacturing same |
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JP2011249425A (ja) * | 2010-05-24 | 2011-12-08 | Toshiba Corp | 半導体発光装置 |
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US9136437B2 (en) | 2015-09-15 |
US8766310B2 (en) | 2014-07-01 |
US20110220931A1 (en) | 2011-09-15 |
EP2797125B1 (en) | 2020-04-08 |
EP2365542A1 (en) | 2011-09-14 |
TW201138150A (en) | 2011-11-01 |
EP2797125A1 (en) | 2014-10-29 |
US20140246691A1 (en) | 2014-09-04 |
JP5197654B2 (ja) | 2013-05-15 |
TWI481075B (zh) | 2015-04-11 |
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