JP2011165769A - 半導体装置の製造方法及びプラズマエッチング装置 - Google Patents
半導体装置の製造方法及びプラズマエッチング装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000001020 plasma etching Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 60
- 238000005530 etching Methods 0.000 claims abstract description 51
- 230000008569 process Effects 0.000 claims abstract description 48
- 239000007789 gas Substances 0.000 claims description 130
- 238000012545 processing Methods 0.000 claims description 95
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 150000002222 fluorine compounds Chemical class 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 230000002250 progressing effect Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 27
- 238000000635 electron micrograph Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 7
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Abstract
【解決手段】処理チャンバー内に混合ガスからなる処理ガスを供給し、かつ複数種のガスのうち少なくとも1種のガスの流量を第1の時間中第1の流量とする第1工程と、第2の時間中前記第1の流量とは異なる流量の第2流量とする第2工程とからなる1サイクルの工程を、プラズマを途中で消すことなく連続的に少なくとも3回以上繰り返して行い、第1の時間及び第2の時間は、1秒以上15秒以下、第1工程における処理ガスの総流量と、第2工程における前記処理ガスの総流量は、同一若しくは異なる場合は、総流量の差が多い方の総流量の10%以下であり、第1工程と第2工程のいずれにおいても被エッチング膜のエッチングを進行させるガスを処理ガス中に含む半導体装置の製造方法。
【選択図】図1
Description
圧力:4.7Pa(35mTorr)
高周波電力(H/L):2000/4000W
直流電圧:150V
処理ガス(第1工程):C4F6/O2/Ar=60/65/900sccm
処理ガス(第2工程):C4F6/O2/Ar=80/65/900sccm
処理時間:(第1工程10秒+第2工程10秒)×4 (トータル80秒)オーバーエッチ41%
温度(上部/側壁/載置台):150/150/60℃
ウエハ裏面側ヘリウム圧力(中央部/周辺部):2000/5300Pa(15/40Torr)
圧力:4.0Pa(30mTorr)
高周波電力(H/L):500/150W
処理ガス(第1工程):HBr/Cl2/NF3=160/20/20sccm
処理ガス(第2工程):HBr/Cl2/NF3=140/20/40sccm
である。
圧力:4.7Pa(35mTorr)
高周波電力(H/L):2000/4000W
処理ガス(第1工程(10秒)):C4F6/O2/Ar=60/65/200sccm
処理ガス(第2工程(10秒)):C4F6/O2/Ar=80/65/200sccm
とした場合のプラズマの発光強度を測定した結果を示している。なお、この場合、波長250−270:CFの発光強度を示している。また、図16は、上記と同様な条件で、第1工程及び第2工程の時間を5秒とした場合、さらに図17はArガスの流量を900sccmに増大させた場合、さらに図18は圧力を9.4Pa(70mTorr)に増大させた場合の発光強度を示している。なお、処理チャンバーの容量は約68リットルである。
圧力:0.67Pa(5mTorr)
高周波電力(H/L):500/500W
処理ガス(第1工程):HBr/O2=40/40sccm
処理ガス(第2工程):HBr/O2=0/80sccm
処理時間:(第1工程11秒+第2工程11秒)×4 (トータル88秒)
温度(上部/側壁/載置台):100/80/40℃
ウエハ裏面側ヘリウム圧力(中央部/周辺部):1330/1330Pa(10/10Torr)
処理ガス:HBr/O2=40/40sccm
で一定とした以外は、実施例2と同一の条件で同一のサンプルのプラズマエッチングを行った。この結果、エッチング途中でエッチストップしてしまい、最後までエッチングすることができなかった。この比較例4のパターンの電子顕微鏡写真を図20(b)に示す。
処理ガス:O2=80sccm
で一定とした以外は、第2実施例と同一の条件で同一のサンプルのプラズマエッチングを行った。この結果、マスク層である酸化シリコン膜122との選択比が不十分でマスクの状態を維持することができず、また、カーボン膜121のCDが細くなってしまった。この比較例5のパターンの電子顕微鏡写真を図20(c)に示す。
圧力:16.0Pa(120mTorr)
高周波電力(H/L):2500/1300W
処理ガス(第1工程):NF3/HBr/O2=0/300/20sccm
処理ガス(第2工程):NF3/HBr/O2=5/300/20sccm
処理時間:(第1工程10秒+第2工程10秒)×3(トータル60秒)
温度(上部/側壁/載置台):100/80/80℃
ウエハ裏面側ヘリウム圧力(中央部/周辺部):1330/1330Pa(10/10Torr)
Claims (9)
- 基板を処理チャンバー内に収容して前記基板に形成された被エッチング膜をエッチングするプラズマエッチング工程を有する半導体装置の製造方法であって、
前記プラズマエッチング工程では、
前記処理チャンバー内に所定の複数種のガスの混合ガスからなる処理ガスを供給し、
かつ、前記複数種のガスのうち少なくとも1種のガスの流量を第1の時間中第1の流量とする第1工程と、第2の時間中前記第1の流量とは異なる流量の第2流量とする第2工程とからなる1サイクルの工程を、プラズマを途中で消すことなく連続的に少なくとも3回以上繰り返して行い、
前記第1の時間及び前記第2の時間は、1秒以上15秒以下、
前記第1工程における前記処理ガスの総流量と、前記第2工程における前記処理ガスの総流量は、同一、若しくは異なる場合は、総流量の差が多い方の総流量の10%以下であり、
前記第1工程と前記第2工程のいずれにおいても前記被エッチング膜のエッチングを進行させるガスを前記処理ガス中に含む
ことを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法であって、
前記第1の時間及び前記第2の時間は、2.5秒以上10秒以下であることを特徴とする半導体装置の製造方法。 - 請求項1又は2記載の半導体装置の製造方法であって、
前記第1の時間と前記第2の時間とは同一であることを特徴とする半導体装置の製造方法。 - 請求項1〜3いずれか1項記載の半導体装置の製造方法であって、
前記被エッチング膜は、酸化シリコン膜であり、
前記処理ガスは少なくともフッ素化合物ガスを含み、前記第1工程と前記第2工程では、フッ素化合物ガスの流量を前記第1の流量と前記第2の流量とに変更することを特徴とする半導体装置の製造方法。 - 請求項4記載の半導体装置の製造方法であって、
前記フッ素化合物ガスがC4F6ガスであることを特徴とする半導体装置の製造方法。 - 請求項4又は5記載の半導体装置の製造方法であって、
前記処理ガスがO2ガスとArガスを含むことを特徴とする半導体装置の製造方法。 - 請求項1〜3いずれか1項記載の半導体装置の製造方法であって、
前記被エッチング膜は、アモルファスシリコン膜であり、
前記処理ガスは少なくともNF3ガスと、HBrガスと、O2ガスとを含み、前記第1工程と前記第2工程では、NF3ガスの流量を前記第1の流量と前記第2の流量とに変更することを特徴とする半導体装置の製造方法。 - 請求項1〜3いずれか1項記載の半導体装置の製造方法であって、
前記被エッチング膜は、カーボン膜であり、
前記処理ガスは少なくともHBrガスと、O2ガスとを含み、前記第1工程と前記第2工程では、HBrガスと、O2ガスの流量を前記第1の流量と前記第2の流量とに変更することを特徴とする半導体装置の製造方法。 - 基板を内部に収容して前記基板に形成された被エッチング膜をエッチングする処理チャンバーと、
前記処理チャンバー内に所定の複数種のガスの混合ガスからなる処理ガスを供給する処理ガス供給機構と、
前記処理ガスをプラズマ化するプラズマ生成機構と
を具備したプラズマエッチング装置であって、
前記処理チャンバー内で、請求項1乃至請求項8いずれが1項記載の半導体装置の製造方法におけるプラズマエッチング工程が実行されるように制御を行う制御手段を備えたことを特徴とするプラズマエッチング装置。
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CN102169823A (zh) | 2011-08-31 |
US20130302993A1 (en) | 2013-11-14 |
US20110195577A1 (en) | 2011-08-11 |
CN102169823B (zh) | 2015-11-25 |
TW201145384A (en) | 2011-12-16 |
KR101742324B1 (ko) | 2017-05-31 |
US8772172B2 (en) | 2014-07-08 |
JP5608384B2 (ja) | 2014-10-15 |
US8491805B2 (en) | 2013-07-23 |
TWI508164B (zh) | 2015-11-11 |
KR20110091462A (ko) | 2011-08-11 |
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