JP2011139069A5 - - Google Patents

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Publication number
JP2011139069A5
JP2011139069A5 JP2010293198A JP2010293198A JP2011139069A5 JP 2011139069 A5 JP2011139069 A5 JP 2011139069A5 JP 2010293198 A JP2010293198 A JP 2010293198A JP 2010293198 A JP2010293198 A JP 2010293198A JP 2011139069 A5 JP2011139069 A5 JP 2011139069A5
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JP
Japan
Prior art keywords
layer
electrode
electronic circuit
diamond layer
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010293198A
Other languages
English (en)
Japanese (ja)
Other versions
JP6245784B2 (ja
JP2011139069A (ja
Filing date
Publication date
Priority claimed from FR0959670A external-priority patent/FR2954831B1/fr
Application filed filed Critical
Publication of JP2011139069A publication Critical patent/JP2011139069A/ja
Publication of JP2011139069A5 publication Critical patent/JP2011139069A5/ja
Application granted granted Critical
Publication of JP6245784B2 publication Critical patent/JP6245784B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010293198A 2009-12-30 2010-12-28 集積ダイアモンド変換画素化撮像装置及びその製造方法 Expired - Fee Related JP6245784B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0959670A FR2954831B1 (fr) 2009-12-30 2009-12-30 Dispositif imageur pixelise integre a transduction par diamant et procede de realisation
FR0959670 2009-12-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017000463A Division JP2017120266A (ja) 2009-12-30 2017-01-05 集積ダイアモンド変換画素化撮像装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2011139069A JP2011139069A (ja) 2011-07-14
JP2011139069A5 true JP2011139069A5 (https=) 2016-06-30
JP6245784B2 JP6245784B2 (ja) 2017-12-13

Family

ID=42340599

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010293198A Expired - Fee Related JP6245784B2 (ja) 2009-12-30 2010-12-28 集積ダイアモンド変換画素化撮像装置及びその製造方法
JP2017000463A Pending JP2017120266A (ja) 2009-12-30 2017-01-05 集積ダイアモンド変換画素化撮像装置及びその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017000463A Pending JP2017120266A (ja) 2009-12-30 2017-01-05 集積ダイアモンド変換画素化撮像装置及びその製造方法

Country Status (4)

Country Link
US (1) US8723187B2 (https=)
EP (1) EP2357496B1 (https=)
JP (2) JP6245784B2 (https=)
FR (1) FR2954831B1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102368536A (zh) * 2011-11-25 2012-03-07 北京大学 一种阻变式存储器单元
US8981383B1 (en) * 2012-03-05 2015-03-17 Aurrion, Inc. Efficient substrate heat transfer layer for photonic devices
KR102450562B1 (ko) * 2014-03-13 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
US10700165B2 (en) * 2016-06-17 2020-06-30 Adamantite Technologies LLC Doped diamond SemiConductor and method of manufacture using laser abalation
DE112020003145T5 (de) * 2019-06-26 2022-03-17 Sony Semiconductor Solutions Corporation Festkörperbildgebungsvorrichtung

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114292A (en) * 1981-01-06 1982-07-16 Fuji Xerox Co Ltd Thin film image pickup element
JPH01291460A (ja) * 1988-05-18 1989-11-24 Mitsubishi Electric Corp 固体撮像装置
JP2591533B2 (ja) * 1990-01-10 1997-03-19 住友電気工業株式会社 放射線検出素子およびその製造方法
US5352897A (en) * 1992-03-16 1994-10-04 Olympus Optical Co., Ltd. Device for detecting X-rays
JPH05308149A (ja) * 1992-04-30 1993-11-19 Olympus Optical Co Ltd 軟ｘ線検出素子
US5276338A (en) * 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
JPH08107209A (ja) * 1994-10-05 1996-04-23 Nippon Telegr & Teleph Corp <Ntt> トランジスタ回路
JP2001291854A (ja) * 2000-04-07 2001-10-19 Matsushita Electric Ind Co Ltd ２次元ｘ線センサおよびその製造方法
JP3719947B2 (ja) * 2001-04-18 2005-11-24 シャープ株式会社 固体撮像装置及びその製造方法
JP4138673B2 (ja) * 2004-01-08 2008-08-27 株式会社神戸製鋼所 ダイヤモンドセンサ
US7160753B2 (en) * 2004-03-16 2007-01-09 Voxtel, Inc. Silicon-on-insulator active pixel sensors
JP4654623B2 (ja) * 2004-07-08 2011-03-23 ソニー株式会社 固体撮像装置の製造方法
GB0423599D0 (en) * 2004-10-23 2004-11-24 Univ Belfast Electro-optical device
JP4725095B2 (ja) * 2004-12-15 2011-07-13 ソニー株式会社 裏面入射型固体撮像装置及びその製造方法
FR2888989B1 (fr) * 2005-07-21 2008-06-06 St Microelectronics Sa Capteur d'images
US8212328B2 (en) * 2007-12-05 2012-07-03 Intellectual Ventures Ii Llc Backside illuminated image sensor
JP2009158528A (ja) * 2007-12-25 2009-07-16 Sharp Corp 半導体装置
US8314498B2 (en) * 2010-09-10 2012-11-20 Aptina Imaging Corporation Isolated bond pad with conductive via interconnect
JP5853389B2 (ja) * 2011-03-28 2016-02-09 ソニー株式会社 半導体装置及び半導体装置の製造方法。

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