JP2011133492A - 試験体の測定または分析のためのシステムおよび方法 - Google Patents
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Abstract
【解決手段】試験体の測定のための方法において、該試験体の反射率測定データおよび分光偏光解析データを測定する工程と、該反射率測定データから、該試験体上に形成された窒化酸化物ゲート誘電体の厚さを判定する工程と、該厚さおよび該分光偏光解析データから、窒化酸化物ゲート誘電体の屈折率を判定する工程と、該屈折率から、該窒化酸化物ゲート誘電体の窒素濃度を判定する工程と、を含む。
【選択図】 図16
Description
Claims (9)
- 試験体の測定のための方法において、
該試験体の反射率測定データおよび分光偏光解析データを測定する工程と、
該反射率測定データから、該試験体上に形成された窒化酸化物ゲート誘電体の厚さを判定する工程と、
該厚さおよび該分光偏光解析データから、窒化酸化物ゲート誘電体の屈折率を判定する工程と、
該屈折率から、該窒化酸化物ゲート誘電体の窒素濃度を判定する工程と、
を含む方法。 - 前記測定する工程は、約220 nm〜約900 nmの波長で該分光偏光解析データを測定する工程を含むこととする請求項1に記載の方法。
- 前記測定する工程は、真空紫外波長で該分光偏光解析データを測定する工程を含むこととする請求項1に記載の方法。
- 前記測定する工程は、該試験体上の多数の場所で該反射率測定データおよび該分光偏光解析データを測定する工程を含み、該方法は、該多数の場所で該窒素濃度を判定する工程と、該窒素濃度のウェーハ面内均一性を判定する工程とを更に含むこととする請求項1に記載の方法。
- 該分光偏光解析データおよび該反射率測定データは、一つのシステムで測定されることとする請求項1に記載の方法。
- 前記測定する工程は、半導体製作プロセス中に、該反射率測定データおよび該分光偏光解析データを測定する工程を含むこととする請求項1に記載の方法。
- 該窒素濃度に基づいて半導体製作プロセスの一つまたはそれ以上のパラメータを変える工程を更に含むこととする請求項1に記載の方法。
- 該窒素濃度を用いて半導体製作プロセスの一つまたはそれ以上のパラメータをモニターする工程を更に含むこととする請求項1に記載の方法。
- 試験体の分析のためのコンピュータ実装された方法において、
該試験体の測定によって生成された反射率測定データから、該試験体上に形成された窒化酸化物ゲート誘電体の厚さを判定する工程と、
該厚さおよび該試験体の測定によって生成された分光偏光解析データから、該試験体上に形成された窒化酸化物ゲート誘電体の屈折率を判定する工程と、
該屈折率から、該窒化酸化物ゲート誘電体の窒素濃度を判定する工程と、
を含む方法。
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US10/846,170 US7067819B2 (en) | 2004-05-14 | 2004-05-14 | Systems and methods for measurement or analysis of a specimen using separated spectral peaks in light |
US10/845,958 US7564552B2 (en) | 2004-05-14 | 2004-05-14 | Systems and methods for measurement of a specimen with vacuum ultraviolet light |
US10/845,982 US7349079B2 (en) | 2004-05-14 | 2004-05-14 | Methods for measurement or analysis of a nitrogen concentration of a specimen |
US10/846,170 | 2004-05-14 | ||
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EP1747434A2 (en) | 2007-01-31 |
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WO2005114148B1 (en) | 2006-06-22 |
ATE518122T1 (de) | 2011-08-15 |
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