JP2011102968A5 - - Google Patents
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- Publication number
- JP2011102968A5 JP2011102968A5 JP2010226226A JP2010226226A JP2011102968A5 JP 2011102968 A5 JP2011102968 A5 JP 2011102968A5 JP 2010226226 A JP2010226226 A JP 2010226226A JP 2010226226 A JP2010226226 A JP 2010226226A JP 2011102968 A5 JP2011102968 A5 JP 2011102968A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- transfer
- chromium
- pattern
- transfer mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 12
- 229910052804 chromium Inorganic materials 0.000 claims 12
- 239000011651 chromium Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 12
- 238000004140 cleaning Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 6
- 239000010408 film Substances 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- 239000012670 alkaline solution Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052723 transition metal Inorganic materials 0.000 claims 2
- 150000003624 transition metals Chemical class 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 239000003513 alkali Substances 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 230000010363 phase shift Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010226226A JP4797114B2 (ja) | 2009-10-12 | 2010-10-06 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009235817 | 2009-10-12 | ||
| JP2009235817 | 2009-10-12 | ||
| JP2010226226A JP4797114B2 (ja) | 2009-10-12 | 2010-10-06 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011161968A Division JP5470339B2 (ja) | 2009-10-12 | 2011-07-25 | 転写用マスク、及び半導体デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011102968A JP2011102968A (ja) | 2011-05-26 |
| JP2011102968A5 true JP2011102968A5 (cg-RX-API-DMAC7.html) | 2011-07-28 |
| JP4797114B2 JP4797114B2 (ja) | 2011-10-19 |
Family
ID=43876123
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010226226A Expired - Fee Related JP4797114B2 (ja) | 2009-10-12 | 2010-10-06 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP2011161968A Active JP5470339B2 (ja) | 2009-10-12 | 2011-07-25 | 転写用マスク、及び半導体デバイスの製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011161968A Active JP5470339B2 (ja) | 2009-10-12 | 2011-07-25 | 転写用マスク、及び半導体デバイスの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8658334B2 (cg-RX-API-DMAC7.html) |
| JP (2) | JP4797114B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101724776B1 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2011046073A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6084391B2 (ja) * | 2011-09-28 | 2017-02-22 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
| JP5879951B2 (ja) * | 2011-11-21 | 2016-03-08 | 信越化学工業株式会社 | 光パターン照射方法、ハーフトーン位相シフトマスク及びハーフトーン位相シフトマスクブランク |
| EP2594994B1 (en) * | 2011-11-21 | 2016-05-18 | Shin-Etsu Chemical Co., Ltd. | Light pattern exposure method |
| US20150111134A1 (en) * | 2012-03-14 | 2015-04-23 | Hoya Corporation | Mask blank and method of manufacturing a transfer mask |
| US20150079502A1 (en) * | 2012-03-14 | 2015-03-19 | Hoya Corporation | Mask blank and method of manufacturing a transfer mask |
| JP6118038B2 (ja) * | 2012-05-22 | 2017-04-19 | Hoya株式会社 | マスクブランクの欠陥検査方法、マスクブランクの製造方法、及び転写用マスクの製造方法 |
| KR101269062B1 (ko) * | 2012-06-29 | 2013-05-29 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법 |
| JP6080915B2 (ja) | 2014-08-25 | 2017-02-15 | エスアンドエス テック カンパニー リミテッド | 位相反転ブランクマスク及びフォトマスク |
| US10365556B2 (en) * | 2015-03-27 | 2019-07-30 | Hoya Corporation | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| US11066274B2 (en) | 2015-06-30 | 2021-07-20 | Otis Elevator Company | Electromagnetic safety trigger |
| JP6900872B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
| JP6900873B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
| US20190086809A1 (en) * | 2017-09-21 | 2019-03-21 | United Microelectronics Corp. | Method for fabricating semiconductor structure involving cleaning mask material |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002156742A (ja) | 2000-11-20 | 2002-05-31 | Shin Etsu Chem Co Ltd | 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法 |
| JP4883278B2 (ja) | 2006-03-10 | 2012-02-22 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスクの製造方法 |
| KR20100009558A (ko) * | 2007-04-27 | 2010-01-27 | 호야 가부시키가이샤 | 포토마스크 블랭크 및 포토마스크 |
| JP5530075B2 (ja) | 2008-03-31 | 2014-06-25 | Ｈｏｙａ株式会社 | フォトマスクブランク、フォトマスク及びこれらの製造方法 |
| JP4739461B2 (ja) * | 2009-10-12 | 2011-08-03 | Ｈｏｙａ株式会社 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
-
2010
- 2010-10-06 JP JP2010226226A patent/JP4797114B2/ja not_active Expired - Fee Related
- 2010-10-08 KR KR1020127011992A patent/KR101724776B1/ko active Active
- 2010-10-08 WO PCT/JP2010/067730 patent/WO2011046073A1/ja not_active Ceased
- 2010-10-08 US US13/501,348 patent/US8658334B2/en active Active
-
2011
- 2011-07-25 JP JP2011161968A patent/JP5470339B2/ja active Active