WO2010140870A3 - 반도체 소자의 미세 패턴 형성 방법 - Google Patents

반도체 소자의 미세 패턴 형성 방법 Download PDF

Info

Publication number
WO2010140870A3
WO2010140870A3 PCT/KR2010/003615 KR2010003615W WO2010140870A3 WO 2010140870 A3 WO2010140870 A3 WO 2010140870A3 KR 2010003615 W KR2010003615 W KR 2010003615W WO 2010140870 A3 WO2010140870 A3 WO 2010140870A3
Authority
WO
WIPO (PCT)
Prior art keywords
forming
photoresist
semiconductor device
exposure
fine pattern
Prior art date
Application number
PCT/KR2010/003615
Other languages
English (en)
French (fr)
Other versions
WO2010140870A2 (ko
Inventor
이준경
장유진
한동우
김정식
이정열
이재우
김덕배
김재현
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Publication of WO2010140870A2 publication Critical patent/WO2010140870A2/ko
Publication of WO2010140870A3 publication Critical patent/WO2010140870A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

노광 마스크 없이 단순 노광에 의하여 2차 포토레지스트 패턴을 형성할 수 있는 이중 노광 패터닝 공정을 이용한, 반도체 소자의 미세 패턴 형성 방법이 개시된다. 상기 반도체 소자의 미세 패턴 형성 방법은, 피식각층이 형성된 반도체 기판 상에 제1 포토레지스트 패턴을 형성하는 단계; 상기 제1 포토레지스트 패턴을 110 내지 220℃로 가열(하드닝 베이크)하여 층간 거울막을 형성하는 단계; 상기 결과물 상에 제2 포토레지스트막을 형성하는 단계; 및 상기 제2 포토레지스트막에 노광 마스크 없이 제2 포토레지스트막의 문턱에너지(Threshold Energy; Eth)보다 낮은 값의 에너지를 갖는 광(저에너지 광)으로 노광 및 현상 공정을 수행하여, 상기 제1 포토레지스트 패턴 사이에 층간 거울막의 난반사에 의한 제2 포토레지스트 패턴을 형성하는 단계를 포함한다.
PCT/KR2010/003615 2009-06-05 2010-06-04 반도체 소자의 미세 패턴 형성 방법 WO2010140870A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0050009 2009-06-05
KR20090050009 2009-06-05

Publications (2)

Publication Number Publication Date
WO2010140870A2 WO2010140870A2 (ko) 2010-12-09
WO2010140870A3 true WO2010140870A3 (ko) 2011-03-31

Family

ID=43298348

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/003615 WO2010140870A2 (ko) 2009-06-05 2010-06-04 반도체 소자의 미세 패턴 형성 방법

Country Status (2)

Country Link
KR (1) KR101685903B1 (ko)
WO (1) WO2010140870A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101860493B1 (ko) 2011-10-20 2018-05-24 삼성디스플레이 주식회사 미세 패턴 마스크의 형성 방법 및 이를 이용한 미세 패턴의 형성 방법
US9618848B2 (en) * 2014-02-24 2017-04-11 Tokyo Electron Limited Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
CN106298465A (zh) * 2016-08-30 2017-01-04 上海华力微电子有限公司 一种双重曝光的光刻工艺方法
KR102592282B1 (ko) * 2021-08-18 2023-10-20 인하대학교 산학협력단 패터닝 후 기능화 가능 네거티브 포토레지스트 조성물 및 그의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0130168B1 (ko) * 1994-07-14 1998-04-06 김주용 미세 패턴 형성방법
KR20070004234A (ko) * 2005-07-04 2007-01-09 삼성전자주식회사 미세패턴의 형성방법 및 이를 이용한 구조물
KR20080039006A (ko) * 2006-10-31 2008-05-07 주식회사 하이닉스반도체 마스크 패턴 형성 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100373841B1 (ko) * 1999-11-23 2003-02-26 삼성에스디아이 주식회사 디퓨징 기능을 갖는 엘씨디 반사층 베이스 코팅 조성물
KR100876783B1 (ko) * 2007-01-05 2009-01-09 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
KR20090016997A (ko) * 2007-08-13 2009-02-18 주식회사 동진쎄미켐 포토레지스트용 가교제, 포토레지스트 조성물 및포토레지스트 패턴의 형성방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0130168B1 (ko) * 1994-07-14 1998-04-06 김주용 미세 패턴 형성방법
KR20070004234A (ko) * 2005-07-04 2007-01-09 삼성전자주식회사 미세패턴의 형성방법 및 이를 이용한 구조물
KR20080039006A (ko) * 2006-10-31 2008-05-07 주식회사 하이닉스반도체 마스크 패턴 형성 방법

Also Published As

Publication number Publication date
KR101685903B1 (ko) 2016-12-14
KR20100131377A (ko) 2010-12-15
WO2010140870A2 (ko) 2010-12-09

Similar Documents

Publication Publication Date Title
WO2008059440A3 (en) Double patterning for lithography to increase feature spatial density
WO2013048155A3 (ko) 유도된 자가정렬 공정을 이용한 반도체 소자의 미세패턴 형성 방법
TW201129872A (en) Pattern forming method and composition for forming resist underlayer film
TW200710992A (en) Method for forming an anti-etching shielding layer of resist patterns in semiconductor fabrication
TW200802536A (en) Method of manufacturing semiconductor device
TWI266967B (en) Resist under-layer lower layer film material and method for forming a pattern
TWI266373B (en) Pattern forming method and method of manufacturing semiconductor device
JP5752655B2 (ja) パターン形成方法
WO2011162890A3 (en) Mask design and opc for device manufacture
JP2013134435A5 (ko)
TW200518172A (en) Photomask, and method for forming pattern
TW200801791A (en) Pattern forming method and phase shift mask manufacturing method
TW200721260A (en) Substrate processing method, photomask manufacturing method, photomask and device manufacturing method
WO2011059961A3 (en) Semiconductor device fabrication using a multiple exposure and block mask approach to reduce design rule violations
TW200702801A (en) Method of forming bank, method of forming film pattern, semiconductor device, electro optic device, and electronic apparatus
TW200725697A (en) Method of fabricating semiconductor device
WO2009078207A1 (ja) パターン形成方法
WO2010140870A3 (ko) 반도체 소자의 미세 패턴 형성 방법
TW200606450A (en) Method of manufacturing substrate having recessed portions for microlenses and transmissive screen
SG155147A1 (en) Methods for enhancing photolithography patterning
TW200743238A (en) Method for forming fine pattern of semiconductor device
WO2010030018A3 (en) Pattern forming method and device production method
WO2016182928A3 (en) Photovoltaic devices with fine-line metallization and methods for manufacture
TW200722455A (en) Polymer for hard mask of semiconductor device and composition containing the same
TW200708886A (en) Method of forming high etch resistant resist patterns

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10783619

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10783619

Country of ref document: EP

Kind code of ref document: A2