JP2011102386A5 - - Google Patents
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- Publication number
- JP2011102386A5 JP2011102386A5 JP2010228609A JP2010228609A JP2011102386A5 JP 2011102386 A5 JP2011102386 A5 JP 2011102386A5 JP 2010228609 A JP2010228609 A JP 2010228609A JP 2010228609 A JP2010228609 A JP 2010228609A JP 2011102386 A5 JP2011102386 A5 JP 2011102386A5
- Authority
- JP
- Japan
- Prior art keywords
- deprotecting
- group
- nitrogen
- atoms
- amine compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 6
- 229920000642 polymer Polymers 0.000 claims 6
- 230000001681 protective effect Effects 0.000 claims 4
- 125000003277 amino group Chemical group 0.000 claims 3
- 125000004432 carbon atom Chemical group C* 0.000 claims 3
- 238000010511 deprotection reaction Methods 0.000 claims 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 3
- -1 secondary amine compound Chemical class 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 125000006165 cyclic alkyl group Chemical group 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 125000002252 acyl group Chemical group 0.000 claims 1
- 229920005601 base polymer Polymers 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000003153 chemical reaction reagent Substances 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 150000002148 esters Chemical group 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims 1
- 238000006467 substitution reaction Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010228609A JP5442576B2 (ja) | 2009-10-13 | 2010-10-08 | 保護ポリマーの脱保護方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009236353 | 2009-10-13 | ||
| JP2009236353 | 2009-10-13 | ||
| JP2010228609A JP5442576B2 (ja) | 2009-10-13 | 2010-10-08 | 保護ポリマーの脱保護方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011102386A JP2011102386A (ja) | 2011-05-26 |
| JP2011102386A5 true JP2011102386A5 (enExample) | 2011-09-15 |
| JP5442576B2 JP5442576B2 (ja) | 2014-03-12 |
Family
ID=43064554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010228609A Active JP5442576B2 (ja) | 2009-10-13 | 2010-10-08 | 保護ポリマーの脱保護方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8273830B2 (enExample) |
| EP (1) | EP2311888B1 (enExample) |
| JP (1) | JP5442576B2 (enExample) |
| KR (1) | KR101603797B1 (enExample) |
| CN (1) | CN102040700B (enExample) |
| TW (1) | TWI428380B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102324819B1 (ko) | 2014-12-12 | 2021-11-11 | 삼성전자주식회사 | 포토레지스트용 고분자, 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법 |
| CN105924553B (zh) * | 2016-05-16 | 2018-07-20 | 张智斌 | 一种分子量窄分布的聚羟基苯乙烯类聚合物的制备方法 |
| TW202518588A (zh) | 2019-08-09 | 2025-05-01 | 日商丸善石油化學股份有限公司 | 聚合物及其製造方法，及阻劑用樹脂組成物 |
| JP2023107363A (ja) * | 2022-01-24 | 2023-08-03 | 国立大学法人九州大学 | 接着性材料、物品およびポリマー |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4822862A (en) * | 1987-01-28 | 1989-04-18 | Hoechst Celanese Corporation | Emulsion polymerization of 4-acetoxystyrene and hydrolysis to poly(p-vinylphenol |
| US4965400A (en) | 1987-09-16 | 1990-10-23 | Richard Vicari | Preparation of 3,5-disubstituted-4-acetoxystyrene |
| US4912173A (en) * | 1987-10-30 | 1990-03-27 | Hoechst Celanese Corporation | Hydrolysis of poly(acetoxystyrene) in aqueous suspension |
| US4868256A (en) * | 1988-08-02 | 1989-09-19 | Hoechst Celanese | Process for the production of 3-mono or 3,5-disubstituted-4-acetoxystyrene its polymerization, and hydrolysis |
| US5264528A (en) * | 1990-12-06 | 1993-11-23 | Hoechst Celanese Corporation | Process for the preparation of 4-hydroxystyrene polymers from 4-acetoxystyrene polymers |
| DE69322946T2 (de) * | 1992-11-03 | 1999-08-12 | International Business Machines Corp., Armonk, N.Y. | Photolackzusammensetzung |
| JP3712047B2 (ja) * | 2000-08-14 | 2005-11-02 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP3796568B2 (ja) | 2001-02-21 | 2006-07-12 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP3867778B2 (ja) | 2001-07-05 | 2007-01-10 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP3821217B2 (ja) * | 2001-10-30 | 2006-09-13 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP4478589B2 (ja) | 2005-02-02 | 2010-06-09 | 富士フイルム株式会社 | ネガ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4525440B2 (ja) * | 2005-04-20 | 2010-08-18 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| JP5067523B2 (ja) | 2006-03-20 | 2012-11-07 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料並びにこれを用いたパターン形成方法 |
| US20080020289A1 (en) * | 2006-07-24 | 2008-01-24 | Shin-Etsu Chemical Co., Ltd. | Novel polymer, positive resist composition and patterning process using the same |
| JP5183903B2 (ja) * | 2006-10-13 | 2013-04-17 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びこれを用いたパターン形成方法 |
| JP4678383B2 (ja) * | 2007-03-29 | 2011-04-27 | 信越化学工業株式会社 | 化学増幅ネガ型レジスト組成物及びパターン形成方法 |
| JP4984067B2 (ja) | 2007-07-23 | 2012-07-25 | 信越化学工業株式会社 | フォトレジスト組成物用高分子化合物の合成方法 |
-
2010
- 2010-10-08 EP EP10187061.6A patent/EP2311888B1/en active Active
- 2010-10-08 JP JP2010228609A patent/JP5442576B2/ja active Active
- 2010-10-11 US US12/901,903 patent/US8273830B2/en active Active
- 2010-10-12 TW TW099134761A patent/TWI428380B/zh active
- 2010-10-12 KR KR1020100099079A patent/KR101603797B1/ko active Active
- 2010-10-13 CN CN201010505496XA patent/CN102040700B/zh active Active
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