CN102040700B - 受保护的聚合物的去保护方法 - Google Patents

受保护的聚合物的去保护方法 Download PDF

Info

Publication number
CN102040700B
CN102040700B CN201010505496XA CN201010505496A CN102040700B CN 102040700 B CN102040700 B CN 102040700B CN 201010505496X A CN201010505496X A CN 201010505496XA CN 201010505496 A CN201010505496 A CN 201010505496A CN 102040700 B CN102040700 B CN 102040700B
Authority
CN
China
Prior art keywords
polymkeric substance
polymer
protected
reaction
shielded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201010505496XA
Other languages
English (en)
Chinese (zh)
Other versions
CN102040700A (zh
Inventor
增永惠一
渡边武
土门大将
渡边聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of CN102040700A publication Critical patent/CN102040700A/zh
Application granted granted Critical
Publication of CN102040700B publication Critical patent/CN102040700B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1809—C9-(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/12—Hydrolysis
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201010505496XA 2009-10-13 2010-10-13 受保护的聚合物的去保护方法 Active CN102040700B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-236353 2009-10-13
JP2009236353 2009-10-13

Publications (2)

Publication Number Publication Date
CN102040700A CN102040700A (zh) 2011-05-04
CN102040700B true CN102040700B (zh) 2013-06-05

Family

ID=43064554

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010505496XA Active CN102040700B (zh) 2009-10-13 2010-10-13 受保护的聚合物的去保护方法

Country Status (6)

Country Link
US (1) US8273830B2 (enExample)
EP (1) EP2311888B1 (enExample)
JP (1) JP5442576B2 (enExample)
KR (1) KR101603797B1 (enExample)
CN (1) CN102040700B (enExample)
TW (1) TWI428380B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102324819B1 (ko) 2014-12-12 2021-11-11 삼성전자주식회사 포토레지스트용 고분자, 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법
CN105924553B (zh) * 2016-05-16 2018-07-20 张智斌 一种分子量窄分布的聚羟基苯乙烯类聚合物的制备方法
TW202518588A (zh) 2019-08-09 2025-05-01 日商丸善石油化學股份有限公司 聚合物及其製造方法，及阻劑用樹脂組成物
JP2023107363A (ja) * 2022-01-24 2023-08-03 国立大学法人九州大学 接着性材料、物品およびポリマー

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0314488A2 (en) * 1987-10-30 1989-05-03 Hoechst Celanese Corporation Hydrolysis of poly (acetoxystyrene) in aqueous suspension
CN101387831A (zh) * 2007-03-29 2009-03-18 信越化学工业株式会社 化学放大的负性抗蚀剂组合物和图案形成方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4822862A (en) * 1987-01-28 1989-04-18 Hoechst Celanese Corporation Emulsion polymerization of 4-acetoxystyrene and hydrolysis to poly(p-vinylphenol
US4965400A (en) 1987-09-16 1990-10-23 Richard Vicari Preparation of 3,5-disubstituted-4-acetoxystyrene
US4868256A (en) 1988-08-02 1989-09-19 Hoechst Celanese Process for the production of 3-mono or 3,5-disubstituted-4-acetoxystyrene its polymerization, and hydrolysis
US5264528A (en) * 1990-12-06 1993-11-23 Hoechst Celanese Corporation Process for the preparation of 4-hydroxystyrene polymers from 4-acetoxystyrene polymers
DE69322946T2 (de) * 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
JP3712047B2 (ja) 2000-08-14 2005-11-02 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3796568B2 (ja) 2001-02-21 2006-07-12 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3867778B2 (ja) 2001-07-05 2007-01-10 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3821217B2 (ja) * 2001-10-30 2006-09-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4478589B2 (ja) 2005-02-02 2010-06-09 富士フイルム株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP4525440B2 (ja) * 2005-04-20 2010-08-18 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP5067523B2 (ja) 2006-03-20 2012-11-07 信越化学工業株式会社 化学増幅ポジ型レジスト材料並びにこれを用いたパターン形成方法
US20080020289A1 (en) * 2006-07-24 2008-01-24 Shin-Etsu Chemical Co., Ltd. Novel polymer, positive resist composition and patterning process using the same
JP5183903B2 (ja) * 2006-10-13 2013-04-17 信越化学工業株式会社 高分子化合物、レジスト材料及びこれを用いたパターン形成方法
JP4984067B2 (ja) 2007-07-23 2012-07-25 信越化学工業株式会社 フォトレジスト組成物用高分子化合物の合成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0314488A2 (en) * 1987-10-30 1989-05-03 Hoechst Celanese Corporation Hydrolysis of poly (acetoxystyrene) in aqueous suspension
CN101387831A (zh) * 2007-03-29 2009-03-18 信越化学工业株式会社 化学放大的负性抗蚀剂组合物和图案形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2006-215180A 2006.08.17

Also Published As

Publication number Publication date
TW201130902A (en) 2011-09-16
CN102040700A (zh) 2011-05-04
US8273830B2 (en) 2012-09-25
US20110086986A1 (en) 2011-04-14
KR101603797B1 (ko) 2016-03-16
KR20110040698A (ko) 2011-04-20
TWI428380B (zh) 2014-03-01
JP5442576B2 (ja) 2014-03-12
EP2311888A1 (en) 2011-04-20
JP2011102386A (ja) 2011-05-26
EP2311888B1 (en) 2013-11-20

Similar Documents

Publication Publication Date Title
KR101970726B1 (ko) 쌍성이온성 광-파괴성 켄쳐
JP6518475B2 (ja) レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物
JP5125832B2 (ja) 感放射線性樹脂組成物
EP2073060B1 (en) Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern
TWI524145B (zh) 光阻組成物、光阻圖型之形成方法
CN105272893A (zh) 光可破坏淬灭剂和相关光致抗蚀剂组合物以及装置形成方法
EP1590709B1 (en) Process for refining crude resin for resist
CN102040700B (zh) 受保护的聚合物的去保护方法
JP3946715B2 (ja) ポジ型レジスト組成物およびレジストパターン形成方法
WO2006046383A1 (ja) レジスト組成物、レジストパターン形成方法および化合物
TWI548936B (zh) Photoresist composition, photoresist pattern formation method
CN101514173A (zh) 多羟基化合物和含有其的化学放大型抗蚀剂组合物
JP2005128049A (ja) 感放射線性樹脂組成物
JP2011051981A (ja) 酸発生剤用の塩、レジスト組成物及びレジストパターンの製造方法
JP2009046395A (ja) レゾルシノール誘導体の製造方法
JP4749664B2 (ja) 電子材料用粗樹脂の精製方法、化学増幅型ホトレジスト組成物及びその製造方法
JP7676221B2 (ja) レジスト組成物、レジストパターン形成方法、化合物及び酸拡散制御剤
WO2007080782A1 (ja) 樹脂、レジスト組成物およびレジストパターン形成方法
WO2006090667A1 (ja) ポジ型レジスト組成物、レジストパターン形成方法および化合物
JP5722558B2 (ja) レジスト組成物
WO2008032512A1 (en) Positive-type resist composition and method for formation of resist pattern
JP2008275942A (ja) レジスト組成物およびレジストパターン形成方法
WO2008032522A1 (fr) Composition de réserve de type réserve positive et procédé pour la formation d'une impression de réserve

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant