JP2011100986A5 - - Google Patents

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Publication number
JP2011100986A5
JP2011100986A5 JP2010225452A JP2010225452A JP2011100986A5 JP 2011100986 A5 JP2011100986 A5 JP 2011100986A5 JP 2010225452 A JP2010225452 A JP 2010225452A JP 2010225452 A JP2010225452 A JP 2010225452A JP 2011100986 A5 JP2011100986 A5 JP 2011100986A5
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JP
Japan
Prior art keywords
field effect
effect transistor
gate dielectric
tunnel field
thickness
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JP2010225452A
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English (en)
Japanese (ja)
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JP2011100986A (ja
JP5442573B2 (ja
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Publication of JP2011100986A5 publication Critical patent/JP2011100986A5/ja
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Publication of JP5442573B2 publication Critical patent/JP5442573B2/ja
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JP2010225452A 2009-10-06 2010-10-05 改良された閾値下の振れを有するトンネル電界効果トランジスタ Active JP5442573B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24918609P 2009-10-06 2009-10-06
US61/249,186 2009-10-06

Publications (3)

Publication Number Publication Date
JP2011100986A JP2011100986A (ja) 2011-05-19
JP2011100986A5 true JP2011100986A5 (enExample) 2013-11-07
JP5442573B2 JP5442573B2 (ja) 2014-03-12

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JP2010225452A Active JP5442573B2 (ja) 2009-10-06 2010-10-05 改良された閾値下の振れを有するトンネル電界効果トランジスタ

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US (1) US8304843B2 (enExample)
EP (1) EP2309544B1 (enExample)
JP (1) JP5442573B2 (enExample)

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