JP5442573B2 - 改良された閾値下の振れを有するトンネル電界効果トランジスタ - Google Patents

改良された閾値下の振れを有するトンネル電界効果トランジスタ Download PDF

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JP5442573B2
JP5442573B2 JP2010225452A JP2010225452A JP5442573B2 JP 5442573 B2 JP5442573 B2 JP 5442573B2 JP 2010225452 A JP2010225452 A JP 2010225452A JP 2010225452 A JP2010225452 A JP 2010225452A JP 5442573 B2 JP5442573 B2 JP 5442573B2
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gate dielectric
field effect
effect transistor
source
channel
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JP2011100986A (ja
JP2011100986A5 (enExample
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アンネ・エス・フェルフルスト
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Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/021—Manufacture or treatment of gated diodes, e.g. field-controlled diodes [FCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2010225452A 2009-10-06 2010-10-05 改良された閾値下の振れを有するトンネル電界効果トランジスタ Active JP5442573B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24918609P 2009-10-06 2009-10-06
US61/249,186 2009-10-06

Publications (3)

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JP2011100986A JP2011100986A (ja) 2011-05-19
JP2011100986A5 JP2011100986A5 (enExample) 2013-11-07
JP5442573B2 true JP5442573B2 (ja) 2014-03-12

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US (1) US8304843B2 (enExample)
EP (1) EP2309544B1 (enExample)
JP (1) JP5442573B2 (enExample)

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Publication number Publication date
US8304843B2 (en) 2012-11-06
EP2309544B1 (en) 2019-06-12
EP2309544A2 (en) 2011-04-13
US20110079860A1 (en) 2011-04-07
JP2011100986A (ja) 2011-05-19
EP2309544A3 (en) 2012-10-10

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