JP2011077193A - 半導体装置の製造方法 - Google Patents
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Abstract
【解決手段】第1の半田バンプ1と第2の半田バンプ3とを位置合せして接触させた後、半田バンプ1、3の融点以上の温度に加熱し、第1の半田バンプ1と第2の半田バンプ3とを溶融させて仮接続した後に冷却する。仮接続体13を還元性雰囲気中で半田バンプ1、3の融点以上の温度に加熱し、仮接続体13の表面に存在する酸化膜7を除去しつつ、仮接続体13を溶融させて本接続体19を形成する。
【選択図】図5
Description
まず、電気めっき法で電極端子上にSn−0.7質量%Cu組成の半田バンプが形成された第1の半導体チップと、この第1の半導体チップが実装される被接続側の第2の半導体チップとを準備した。第2の半導体チップの電極端子上には、第1の半導体チップ1と同様にSn−0.7質量%Cu組成の半田バンプが形成されている。第1の半導体チップの電極端子と第2の半導体チップの電極端子とは互いに接続され得るように、対応した所定の位置に配置されている。端子数は約2000、半田バンプの高さは20μm、隣接する端子ピッチの最小値は60μmとした。フラックス剤は用いていない。
実施例1と同じ2個の半導体チップを用意し、これらを位置合せ機構、加熱機構、加圧機構、超音波発生機構を備えるフリップチップボンダによって、室温下で位置合せした後に対応する半田バンプ同士を接触させた。接触荷重は実施例1と同様とした。次いで、接触させた半田バンプに10Nの加圧力を加えつつ、50kHz、40Wの超音波振動を8秒間印加することによって、半田バンプの仮接続体を形成した。
Claims (5)
- 第1の基板に設けられた第1の半田バンプと第2の基板に設けられた第2の半田バンプとを位置合せして接触させる第1の工程と、
前記第1および第2の半田バンプの融点以上の温度に加熱し、前記第1の半田バンプと前記第2の半田バンプとを溶融させて仮接続した後に冷却する第2の工程と、
前記第1の半田バンプと前記第2の半田バンプとの仮接続体を還元性雰囲気中で前記第1および第2の半田バンプの融点以上の温度に加熱し、前記仮接続体の表面に存在する酸化膜を除去しつつ、前記仮接続体を溶融させて本接続する第3の工程と
を具備することを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
第1の工程で前記第1および第2の半田バンプの当初の高さの和Hに対して接触後の前記第1および第2の半田バンプの高さの和H1が90%以上100%以下の範囲となるように荷重を加えて第1の半田バンプと第2の半田バンプとを接触させることを特徴とする半導体装置の製造方法。 - 請求項2記載の半導体装置の製造方法において、
前記第2の工程で前記高さH1を維持しつつ前記第1および第2の半田バンプを溶融させた後、前記高さHに対して溶融状態の前記第1および第2の半田バンプの高さの和H2が20%以上80%以下の範囲となるように第1の基板と第2の基板との間隔を調整することを特徴とする半導体装置の製造方法。 - 第1の基板に設けられた第1の半田バンプと第2の基板に設けられた第2の半田バンプとを位置合せして接触させる第1の工程と、
前記第1および第2の半田バンプに超音波エネルギを印加し、前記第1の半田バンプと前記第2の半田バンプとを仮接続する第2の工程と、
前記第1の半田バンプと前記第2の半田バンプとの仮接続体を還元性雰囲気中で前記第1および第2の半田バンプの融点以上の温度に加熱し、前記仮接続体の表面に存在する酸化膜を除去しつつ、前記仮接続体を溶融させて本接続する第3の工程と
を具備することを特徴とする半導体装置の製造方法。 - 請求項4記載の半導体装置の製造方法において、
前記第2の工程で前記第1および第2の半田バンプが局部的に変形するように荷重を加えつつ、前記第1および第2の半田バンプに前記超音波エネルギを印加することを特徴とする半導体装置の製造方法。
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US12/882,673 US8409919B2 (en) | 2009-09-29 | 2010-09-15 | Method for manufacturing semiconductor device |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013080759A (ja) * | 2011-10-03 | 2013-05-02 | Panasonic Corp | 半導体素子の実装方法 |
JP2014192380A (ja) * | 2013-03-27 | 2014-10-06 | Fujitsu Ltd | 電子装置の製造方法 |
US11476229B2 (en) | 2019-03-15 | 2022-10-18 | Kioxia Corporation | Semiconductor device manufacturing method |
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Publication number | Priority date | Publication date | Assignee | Title |
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TWI399974B (zh) * | 2010-03-12 | 2013-06-21 | Primax Electronics Ltd | 攝像模組之組裝方法 |
JP5645592B2 (ja) | 2010-10-21 | 2014-12-24 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
WO2012103868A2 (de) * | 2011-02-02 | 2012-08-09 | Pac Tech - Packaging Technologies Gmbh | Verfahren und vorrichtung zur elektrischen kontaktierung von anschlussflächen zweier substrate |
US8939346B2 (en) * | 2011-02-15 | 2015-01-27 | International Business Machines Corporation | Methods and systems involving soldering |
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