JP2011055000A - Method and device for peeling film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and a device that allow easily peeling off a surface-protective film from a wafer. <P>SOLUTION: The film peeling device (100) for peeling a film (3) stuck on a film sticking face of the wafer (120) includes a wafer suction means (31) for suctioning a wafer so that the film-stuck face of the wafer forms an upper face; an peeling-tape delivery means (42) for delivering a peeling tape on the film-stuck face; a heating means (80) for exclusively pressing against one portion of the peeling tape against the film of the wafer at an end of the wafer and heating it, wherein an adhesive force between the peeling tape and the film is enhanced at one part of the peeling tape; and a peeling means (44) for peeling the film from the film-stuck face of the wafer using the peeling tape, by using one portion of the peeling tape where the adhesive force is enhanced as a peeling-start position (75a). <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a film peeling method for peeling a film affixed to the surface of a wafer, for example, a surface protective film, and a film peeling apparatus for carrying out this method.

  In the semiconductor manufacturing process, the size of the wafer increases year by year, and the wafer tends to be thinned from the viewpoint of improving the mounting density. In order to make the wafer thinner, back grinding (backside grinding) is performed in which a surface protective film is applied to the surface of the wafer on which the elements are formed, and the backside of the wafer is ground with this wafer surface adsorbed to the suction table. ing.

  This back grinding reduces the wafer thickness to, for example, 50 micrometers. For this reason, the mechanical strength of the wafer after back grinding also decreases accordingly. The above-mentioned surface protective film needs to be peeled after back grinding, but in the prior art, the peeling tape is stuck on the whole surface protective film of the wafer by a sticking roller, and then the peeling tape is wound together with the surface protective film. The surface protective film was peeled off. However, since the mechanical strength of the wafer is greatly reduced, there is a problem that the wafer is damaged when the release tape is attached to the surface protective film.

  In order to solve such a problem, in Patent Document 1, the orientation of the wafer is adjusted so that the direction of the peeling tape does not coincide with the dicing groove formed on the wafer. Patent Document 2 discloses a peeling apparatus that starts peeling from a corner of a wafer.

JP 2004-165570 A JP 2004-128147 A

  Incidentally, FIG. 12 is an enlarged cross-sectional view of a wafer to which a surface protective film is attached, and shows that the wafer 120 having a thickness D0 is ground to the thickness D1 by back grinding. As can be seen from FIG. 12, the edge 125 of the wafer 120 has been chamfered from the beginning. In recent years, in order to eliminate the gap between the surface protective film 110 and the wafer 120 to enhance adhesion and prevent the surface protective film after back grinding from becoming larger in diameter than the wafer, the surface protective film 110 has been applied in recent years. There is a case where a so-called angle cut is performed to cut the surface protection film 110 in the direction of arrow Z along the chamfered portion of the wafer 120 later.

  By the way, as shown in the drawing, the surface protective film 110 to be attached to the front surface 121 of the wafer 120 before the back surface grinding is composed of a protective film substrate 111 and a protective film adhesive layer 112. Therefore, when the angle cut described above is performed, the protective film substrate 111 of the surface protective film 110 is smaller than the surface 121 of the wafer 120. In such a case, as in Patent Document 1 and Patent Document 2, it is difficult to peel all of the surface protective film 110 after the back surface grinding simply by adjusting or selecting the orientation of the wafer 120 or the peeling start location. is there.

  In addition, the adhesive performance of the release tape varies depending on the characteristics of the surface protective film, which is an object to be bonded, or the content of processing performed on the surface protective film after being attached to the wafer. And the situation where sticking of a peeling tape may become difficult with respect to the specific surface protection film or the surface protection film which received the specific process after sticking.

  The present invention has been made in view of such circumstances, and even when the surface protection film is cut along the chamfered portion of the wafer, and is subjected to a specific surface protection film or a specific treatment. A film peeling method capable of easily integrating a peeling tape with a surface protective film and easily peeling the surface protective film together with the surface protective film, and a film peeling apparatus for carrying out this method are provided. For the purpose.

  In order to achieve the above-mentioned object, according to the first invention, in the film peeling apparatus for peeling the film stuck on the film sticking surface of the wafer, the wafer so that the film sticking surface of the wafer becomes the upper surface. A wafer adsorbing means for adsorbing, a peeling tape feeding means for feeding a peeling tape onto the film on the film application surface, and only a part and / or a plurality of parts of the peeling tape at the edge of the wafer. Heating means that presses and heats the film, thereby increasing the adhesive force between the release tape and the film in the part and / or a plurality of parts of the release tape, By using the release tape as the peeling start point, the part of the raised release tape Serial wafer of the film sticking face of including a film peeling device the peeling means for peeling the film is provided.

  In other words, in the first invention, a part having an increased adhesive force is formed between the peeling tape and the film by pressing the peeling tape against the film by the heating means and heating. Even when the film is not sufficiently adhered to a film or the like, the release tape can be attached to the film. Furthermore, since the part where the adhesive force is increased functions as a peeling start point, the film can be easily peeled from the wafer together with the peeling tape even when the film is cut along the chamfered part of the wafer. The release tape used is preferably a heat-sensitive release tape.

According to the second invention, in the first invention, the heating pressing portion of the heating means for pressing the peeling tape against the film has a circular or arcuate cross section.
That is, in the second aspect of the invention, the heating pressing portion of the heating means is positioned so that the circular arc portion or the arcuate portion of the arcuate cross section is inscribed in the wafer, so that heat is not applied to unnecessary portions. An exfoliation start location can be formed at the outermost edge. In addition, the cross section of the heating pressing portion may be a shape other than a circle or an arc, for example, a rectangle.

According to a third invention, in the first or second invention, the peeling means includes an edge member that contacts the wafer via the peeling tape.
That is, in the third invention, the film peeling apparatus of the present invention can be formed with a relatively simple configuration.

According to a fourth invention, in the first invention, the peeling means includes an edge member that contacts the wafer via the peeling tape, and the heating means is incorporated in the edge member of the peeling member. .
That is, in the fourth invention, since the heating member and the peeling member are integrated, the entire film peeling apparatus can be miniaturized.

According to a fifth invention, in the first invention, the heating means comprises a pressing roller capable of heating the peeling tape and moving in a substantially transverse direction of the peeling tape, wherein the pressing roller is The portion of the release tape was heated by moving over the portion of the release tape.
That is, in the fifth invention, since the pressing roller is used, by rolling the pressing roller, only a desired part of the peeling tape can be easily pressed and this part can be heated. Further, if the pressing roller is reciprocated several times at a desired position, the adhesive force between the peeling tape and the film can be further increased.

According to a sixth invention, in the fifth invention, the heating roller comprises a rotatable disk, and the pressing roller is arranged such that a rotation axis of the pressing roller is located on a radius of the rotatable disk. Is attached to the lower surface of the rotatable disk, and the pressing roller rotates and moves along an arc on the peeling tape when the rotatable disk rotates.
That is, in the sixth aspect of the invention, it is possible to very easily press and heat only a desired part of the release tape by simply rotating the rotatable disk, and thereby the adhesive force between the release tape and the film. Can be reliably increased. Moreover, the structure which can move a press roller to the radial direction of a rotatable disk in the state which made the center of the wafer the center of rotation may be sufficient. In this case, even when the dimensions of the wafer are different, the edge of the wafer can be easily pressed by moving the pressing roller in the radial direction.

  According to the seventh invention, in the film peeling method for peeling the film stuck on the film sticking surface of the wafer, the wafer is arranged on the wafer adsorbing means so that the film sticking surface of the wafer becomes the upper surface. The release tape is fed out onto the film on the film application surface, and a part of the release tape is pressed against the film of the wafer by heating means and heated, whereby the release tape is peeled off at the part of the release tape. An adhesive force between the film and the tape is increased, and the film is further peeled from the film application surface of the wafer by the release tape, with the part of the release tape having the increased adhesive force as a peeling start location. A film peeling method for peeling the film is provided.

  That is, in the seventh invention, a part having an increased adhesive force is formed between the peeling tape and the film by pressing the peeling tape against the film by heating means and heating, so that the peeling tape is a specific one. Even when the film is not sufficiently adhered to a film or the like, the release tape can be attached to the film. Furthermore, since the part where the adhesive force is increased functions as a peeling start point, the film can be easily peeled from the wafer together with the peeling tape even when the film is cut along the chamfered part of the wafer. The release tape used is preferably a heat-sensitive release tape.

According to an eighth aspect, in the seventh aspect, the release tape is made of only a plastic material.
According to a ninth aspect, in the eighth aspect, the plastic material is one or more substances selected from the group consisting of polyethylene, polypropylene, polyvinyl chloride, and polystyrene.
That is, in the eighth and ninth inventions, the running cost of the film peeling apparatus can be reduced by using a tape or film made of a relatively inexpensive plastic material without using a heat-sensitive peeling tape. In addition, it is preferable that the softening point of these plastic materials is smaller than a value around about 100 ° C., so that the set temperature of the heating means can be relatively lowered.

1 is a schematic diagram showing a wafer processing apparatus according to the present invention. It is a side view which shows the tape peeling apparatus based on 1st embodiment of this invention. (A) It is a top view of the wafer for showing the heating location formed with a heating member. (B) It is another top view of the wafer for showing a heating location. (C) It is another top view of the wafer for showing a heating location. (A) It is an enlarged side view which shows a tape peeling apparatus. (B) It is another enlarged side view which shows a tape peeling apparatus. (A) It is a side view which shows the tape peeling apparatus based on 2nd embodiment of this invention. (B) It is a partial enlarged view which shows the operation state of the tape peeling apparatus shown by Fig.5 (a). (A) It is a side view which shows the tape peeling apparatus based on 3rd embodiment of this invention. (B) It is a partial top view of the tape peeling apparatus shown by Fig.6 (a). It is a side view which shows the tape peeling apparatus based on 4th embodiment of this invention. It is a bottom view of a rotatable disc. It is the elements on larger scale of the tape peeling apparatus of this invention which shows the state which the heating part is falling. (A) It is a top view of the wafer which shows the heating location formed with a heating member, when a heating part is driven. (B) It is a top view of a wafer and a peeling tape which show the locus | trajectory of the heating location formed by a heating member when rotating a disk. It is a side view which shows another tape peeling apparatus of this invention provided with the single press roller. It is an expanded sectional view of a wafer with which a surface protection film was stuck.

Embodiments of the present invention will be described below with reference to the accompanying drawings. In the following drawings, the same members are denoted by the same reference numerals. In order to facilitate understanding, the scales of these drawings are appropriately changed.
FIG. 1 is a schematic diagram showing a wafer processing apparatus according to the present invention. As shown in FIG. 1, a wafer whose back surface is ground and thinned by a back grinder (BG) 1 is supplied to a wafer processing apparatus 5. Since it is necessary to protect the semiconductor chip formed on the front surface of the wafer when the back surface of the wafer is ground, a surface protective film 110 is attached to the front surface of the wafer 120 supplied to the wafer processing apparatus 5.

  As shown in FIG. 1, the wafer processing apparatus 5 includes an inversion unit 300 that inverts the wafer 120. A wafer 120 having a surface protective film 110 attached to the front surface and back-ground by the back grinder 1 is supplied into the reversing unit 300 by a loader (not shown). Since the back surface of the wafer 120 faces upward when the back grinding is performed by the back grinder 1, the back surface of the wafer 120 faces upward when the wafer 120 is supplied to the reversing unit 300. Therefore, in the reversing unit 300, the wafer 120 is turned upside down, and the surface of the wafer 120 to which the surface protection film 110 is attached faces upward. As will be described later, the wafer 120 may simply pass through the reversing unit 300 without reversing the wafer 120.

  Some types of the surface protective film 110 may have a decrease in the adhesive strength of the surface protective film 110 when irradiated with a predetermined amount of ultraviolet rays. When such a surface protective film 110 is employed, an ultraviolet irradiation unit, that is, a UV irradiation unit 400 of the wafer processing apparatus 5 shown in FIG. 1 can be used. Since the wafer 120 is supplied to the UV irradiation unit 400 with the surface to which the surface protection film 110 is attached facing upward, the UV lamp 490 irradiates the surface protection film 110 with a predetermined amount of ultraviolet light, and then the wafer. 120 is returned to the reversing unit 300. When the wafer 120 is moved in this way, a moving device such as a robot arm is used. However, these are general devices, and illustration and description thereof are omitted. In addition, when using the surface protection film 110 whose adhesive force does not change by irradiation of ultraviolet rays, it is not necessary to supply the wafer 120 to the UV irradiation unit 400, and the steps performed in the UV irradiation unit 400 can be omitted. .

  Next, the wafer 120 is supplied from the reversing unit 300 to the positioning unit 200. The positioning unit 200 includes a circular suction table 31 (not shown in FIG. 1) that sucks the wafer 120. The suction table 31 is made of porous ceramic or the like and is connected to a vacuum source (not shown). The diameter of the suction table 31 is substantially equal to or larger than the diameter of the wafer 120 to be sucked. In the positioning unit 200, a positioning sensor (not shown) is provided above the suction table 31. Then, by using this positioning sensor, the wafer 120 is accurately positioned concentrically on the suction table 31. Next, by driving the vacuum source, the wafer 120 is accurately sucked to the suction table 31 with the surface protection film 110 facing upward.

  Thereafter, the suction table 31 is transferred from the positioning unit 200 to the peeling unit 100 in a state where the wafer 120 is sucked. FIG. 2 is a side view showing a tape peeling apparatus which is the peeling unit 100 according to the present invention. Hereinafter, the tape peeling apparatus will be described with reference to FIG.

  The tape peeling apparatus 100 shown in FIG. 2 includes a supply unit 42 that supplies the peeling tape 3 into the housing 11 and a winding unit 43 that winds the tape from the supply unit 42. The peeling tape 3 used in the tape peeling apparatus 100 is a tape used for peeling the surface protective film 110 attached to the surface of the wafer 120. The width of the peeling tape 3 is smaller than the diameter of the wafer 120, and the width of the peeling tape 3 in this embodiment is about half of the diameter of the wafer 120. In the present embodiment, the release tape 3 can be a heat-sensitive release tape that exhibits an adhesive force when heated.

  As shown in the figure, a plurality of casters 18 and a plurality of stoppers 19 (one each shown in FIG. 2) are provided on the bottom surface of the housing 11, and the tape peeling device 100 is placed on the floor by the casters 18. The tape peeling device 100 can be fixed to this position by the stopper 19 by being moved to a desired position on L. Further, doors 17 are provided in the lower part of the tape peeling apparatus 100. When these doors 17 are opened, a control unit 89 (not shown) disposed in the lower part of the tape peeling apparatus 100, for example, a digital computer is accessed. Can do. The control unit 89 controls each member in the tape peeling apparatus 100.

  As shown in FIG. 2, a pair of guide rollers 47 that guide the peeling tape 3 and apply a predetermined tension to the peeling tape 3 are provided downstream of the supply unit 42, and further downstream of the guide roller 47. In addition, a peeling portion 44 is provided upstream of the suction table 31. As can be seen from FIG. 2, the peeling portion 44 includes a pair of rollers 45 and a peeling roller 46 located immediately downstream of these rollers 45. The peeling roller 46 is larger than the maximum width of the suction table 31.

  Although not shown in the drawing, a part of the peeling portion 44 is connected to, for example, an endless chain suspended on two pulleys, and the pulleys are connected to a motor (not shown). By rotating the motor in the forward direction and the reverse direction, the entire peeling portion 44 can be reciprocated in the horizontal direction between the pulleys. Of course, the peeling portion 44 may be reciprocated in the horizontal direction by another driving mechanism. As will be described in detail later, the peeling tape 44 can be peeled from the surface of the wafer 20 by moving the peeling portion 44 horizontally on the diameter of the wafer 20 from one end of the wafer 120 to the other end of the wafer. Further, a guide roller 51 that guides the peeling tape 3 and a winding unit 43 that winds up the peeling tape 3 are provided downstream of the peeling unit 44, and the peeling tape 3 is fed out from the supply unit 42. 3 is located above the suction table 31.

  As shown in FIG. 2, a shelf board 12 is provided in an intermediate portion of the tape peeling device 100. The suction table 31 that sucks the wafer 120 in the positioning unit 200 slides on the shelf plate 12 and enters the area of the tape peeling device 100. Although not described in detail, the suction table 31 that has entered the tape peeling device 100 to a predetermined position can be raised and lowered at this position. For this reason, in this invention, it is possible to peel off the surface protection film 110, without arrange | positioning the wafer 120 correctly positioned on the adsorption | suction table 31 in the positioning unit 200 on another table again. .

  In the embodiment shown in FIGS. 1 and 2, the suction table 31 can slide between the peeling unit 100 and the positioning unit 200, but the suction table of the peeling unit 100 is used as the positioning unit 200. The table may be separate.

  Referring to FIG. 2 again, in the housing 11, the heating unit 80 is installed above the suction table 31. As illustrated, the heating unit 80 includes two cylinders 81 juxtaposed in the vertical direction. Plungers 82 extending from the lower ends of the cylinders 81 can reciprocate in the respective cylinders 81. At the tip of the plunger 82, a heating pressing unit 83 that presses the peeling tape 3 against the surface protection film 110 of the wafer 120 and heats it is provided. Heating wires (not shown) arranged inside these heating and pressing portions 83 are connected to a controller (not shown) inside the cylinder 81 through each plunger 82. When the peeling unit 100 is used, the controller heats the heating pressing portion 83 to a temperature necessary for the peeling tape 3 to exhibit an adhesive force, for example, around 100 ° C.

  In FIG. 2, the suction table 31 transferred on the shelf 12 from the positioning unit 200 to the peeling unit 100 stops below the heating unit 80 (indicated by a dotted line in FIG. 2). Next, the total thickness t of the wafer 120 and the surface protection film 110 is measured using a thickness sensor not shown in FIG. Since the back surface of the wafer 120 is ground and the degree of grinding varies depending on the lot or the like, the thickness of the wafer 120 also varies depending on the lot or the like. The total thickness t measured by the thickness sensor is supplied to the control unit 89.

  Thereafter, the suction table 31 is raised toward the peeling tape 3 below the heating unit 80 by known means (not shown) (see FIG. 2). Since the distance between the peeling tape 3 located below the heating unit 80 and the shelf 12 is known in advance, the surface protective film 110 and the peeling tape 3 of the wafer 120 are attached by using the total thickness t described above. Light contact (soft contact). Since the surface protective film 110 is only lightly brought into contact with the peeling tape 3 in this way, the peeling tape 3 is brought into contact only with the surface protective film 110, and the peeling tape 3 is a suction table 31, particularly a suction table 31 having a suction function. There is no contact with the top edge. Therefore, in the present invention, the adhesive of the peeling tape 3 does not enter the hole on the upper surface of the suction table 31 and become clogged, so that the wafer 120 can be prevented from being poorly sucked. In particular, in the present invention, the suction table 31 is raised in consideration of the total thickness t of the surface protective film 110 and the wafer 120, so that such suction failure of the wafer 120 can be surely avoided. It becomes.

  Before the heating unit 80 is driven, the peeling tape 3 and the surface protective film 110 are merely in contact with each other, and thus sufficient adhesive force is not generated between the peeling tape 3 and the surface protective film 110. For this reason, before the heating unit 80 is driven, the adhesive force between the peeling tape 3 and the surface protective film 110 is the adhesive force between the surface protective film 110 and the wafer 120, and the wafer 120 and the suction table 31. Less than the adsorption power between. That is, when the release tape 3 is wound in this state, only the release tape 3 is wound, and the surface protection film 110 can remain attached to the wafer 120.

  For this reason, the heating part 80 is operated in the state which the peeling tape 3 and the surface protection film 110 are contacting lightly. By driving an actuator (not shown), the plunger 82 of the heating unit 80 extends downward. The plunger 82 extends by a predetermined length (see FIG. 2), so that the heating pressing portion 83 presses the peeling tape 3 against the surface protection film 110 and heats it.

  FIG. 3A is a plan view of the wafer showing the heating points formed by the heating pressing unit 83 when the heating unit 80 is driven. In FIG. 3A, a heating portion 85 is formed on the peeling tape 3 by the heating pressing portion 83 at the edge portion of the wafer 120. In addition, in FIG. 3A, since the heating pressing part 83 whose cross section is rectangular is used, the rectangular heating location 85 is shown.

  The heating location 85 is formed by the pressing action of the heating pressing portion 83. And since the peeling tape 3 is a heat sensitive type, in the heating location 85, the adhesive force between the peeling tape 3 and the surface protection film 110 increases. That is, after the heating unit 80 is driven, the adhesive force between the peeling tape 3 and the surface protective film 110 at the heating location 85 is larger than the adhesive force between the surface protective film 110 and the wafer 120. However, the adhesive force between the peeling tape 3 and the surface protective film 110 is not greater than the attractive force between the wafer 120 and the suction table 31. Thus, the peeling part 44 is driven in the state which increased the adhesive force between the peeling tape 3 and the surface protection film 110 in the heating location 85. FIG.

  4 (a) and 4 (b) are partially enlarged views of the tape peeling device of the present invention showing a state where the pressing portion is raised. In driving the peeling unit 44, first, the plunger 82 of the heating unit 80 is retracted into the cylinder 81 as shown in FIG. 4. As a result, the heating pressing portion 83 is detached from the peeling tape 3, and the peeling tape 3 is in a state of lightly contacting the surface protection film 110 of the wafer 120 except for the heating portion 85. Next, the peeling portion 44 is slid from the left side to the right side in FIG. 4A, and the surface protection film 110 attached to the wafer surface is peeled and moved upward. As described above, the adhesive force between the peeling tape 3 and the surface protective film 110 is increased at the heating portion 85, and this adhesive force is higher than the adhesive force between the surface protective film 110 and the wafer 120. large. For this reason, the heating point 85 functions as a peeling start point, and the surface protection film 110 is peeled from the wafer 120. On the other hand, when the peeling portion 44 moves to the left (in this case, the rotation of the roller 45 is locked), the guide roller 47 freely rotates and the peeling tape 3 is sent to the left side, and the next peeling tape is pulled out. At the same time, the peeled surface protective film is wound up together with the release tape. Then, as the release tape 3 is wound, the surface protection film 110 is wound around the winding portion 43 together with the release tape 3.

  Thus, in this invention, the part by which the adhesive force was heightened between the peeling tape 3 and the surface protection film 110 can be formed by heating the peeling tape 3 by the heating part 80. FIG. That is, in the present invention, the surface protective film 110 is of a specific type, or the surface protective film 110 is subjected to a specific treatment after being applied, and it is difficult to apply the release tape 3 to the surface protective film 110. Even so, it is possible to easily attach the release tape 3 by forming a portion with increased adhesion.

  Further, in the present invention, since the heating portion 85 is formed only at the edge of the wafer 120 by the heating pressing portion 83, the energy required for heating is compared with the case where the entire peeling tape 3 on the wafer 120 is heated. Can also be reduced.

  Further, as described above with reference to FIG. 12, when the surface protective film 110 is cut along the chamfered portion of the wafer, the protective film adhesive layer 112 of the surface protective film 110 remains in the chamfered portion. Peeling may be difficult. However, in the present invention, even in such a case, a portion where the adhesive force is enhanced by the heating unit 80 can be formed. It can be easily peeled off.

  In FIG. 3A, since the heating pressing portion 83 having a rectangular cross section is used, the heating portion 85 does not coincide with a part of the edge of the wafer 120, but substantially coincides with the edge of the wafer 120. It is preferable to use the heated pressing portion 83 having the shape described above. For example, FIG. 3B shows a heating spot 85a formed by the heating pressing portion 83 having a circular cross section. FIG. 3C shows a heating portion 85b formed by the heating pressing portion 83 having a bow-shaped cross section. The radius of the arc of the arcuate portion is preferably the same as the radius of the wafer 120. For the purpose of simplification, the peeling tape 3 is not shown in FIGS. 3 (b) and 3 (c).

  As shown in these drawings, the arc portions of the heating portions 85 a and 85 b are formed so as to be inscribed in the edge portion of the wafer 120. In such a case, it is possible to prevent heating to a part of the release tape 3 where the surface protection film 110 is not present. That is, the heating locations 85a and 85b can be formed on the edge of the wafer 120 without applying heat to unnecessary portions.

  Further, in FIG. 2 and the like, two cylinders 81 and a related heat pressing unit 83 are shown, but the cylinder 81 and the like on the side close to the winding unit 43 may be omitted.

  Fig.5 (a) is a side view which shows the tape peeling apparatus based on 2nd embodiment of this invention. The peeling portion 44 ′ in FIG. 5A includes a peeling bar 91 that extends perpendicular to the direction of the peeling tape 3 on the downstream side of the heating portion 80. The peeling bar 91 is a rod-shaped body having a substantially triangular cross section, and is also called an edge member. The length of the peeling bar 91 is larger than the width of the peeling tape 3. A support bar 92 that supports the peeling bar 91 integrally supports the rear surface of the peeling bar 91. As shown in the drawing, the peeling tape 3 is arranged to be bent at the tip side of the peeling bar 91 corresponding to the apex of the triangular cross section. The tip side of the peeling bar 91 is located slightly higher than the height of the surface protection film 110 of the wafer 120 by other guide rollers (not shown). Further, guide rollers 57 and 58 are arranged upstream of the heating unit 80 and downstream of the peeling bar 91, respectively.

  In such an embodiment, the heating table 80 is driven in a state where the suction table 31 is raised to the peeling tape 3 and the peeling tape 3 and the surface protective film 110 are lightly contacted as described above. The plunger 82 is extended, whereby the heating pressing portion 83 presses the peeling tape 3 against the surface protection film 110 and heats it.

  Next, the plunger 82 of the heating unit 80 is retracted, and the heating pressing unit 83 is detached from the peeling tape 3. And after forming the heating location 85, the suction table 31 is moved to a horizontal direction so that the suction table 31 may pass the peeling bar 91 as shown in the figure. As described above, the peeling bar 91 is located slightly higher than the surface protection film 110 of the wafer 120, so the surface protection film 110 does not contact the peeling bar 91. Thereby, the heating location 85 mentioned above functions as a peeling start location, and the surface protection film 110 is similarly peeled from the wafer 120. In this case, as shown in FIG. 5B, which is a partial enlarged view showing the operation state of the tape peeling apparatus in FIG. 5A, the surface protection film 110 is peeled off by the peeling bar 91 and the wafer 120 together with the peeling tape 3. Then, the sheet is wound up to the upper right in FIG. In such a second embodiment, the same effect as the first embodiment described above can be obtained. In the second embodiment, the pressing action of the wafer 120 by the peeling bar 91 may be omitted.

  FIG. 6A is a side view showing a tape peeling apparatus according to the third embodiment of the present invention. The third embodiment has substantially the same configuration as the second embodiment, but is different in that the heating unit 80 including the heating pressing unit 83 is excluded in the third embodiment. Instead, the lower abutment surface 93 of the peeling bar 91 at least partially includes the heating surface 95. Heat of a heating wire (not shown) incorporated in the peeling bar 91 is transmitted to the heating surface 95, so that the heating surface 95 is brought to a temperature necessary for the peeling tape 3 to exhibit an adhesive force, for example, around 100 ° C. Can be heated up to. For this reason, the thermal conductivity of the material forming the heating surface 95 is preferably higher than the thermal conductivity of the material forming the peeling bar 91. As described above, in the third embodiment, since the heating unit 80 is unnecessary, the structure of the peeling unit 100 can be simplified and the entire peeling unit 100 can be made relatively small. Moreover, in embodiment which is not illustrated, the whole lower side contact surface 93 of the peeling bar 91 may be a heating surface.

  As shown in FIG. 6B, which is a partial plan view of the tape peeling device shown in FIG. 6A, the heating surface 95 is provided near the center of the length portion of the peeling bar 91. For this reason, the heating surface 95 comes to be located on the approximate centerline of the peeling tape 3 at the time of use. The heating surface 95 is preferably smaller than the width of the peeling tape 3.

  When the suction table 31 passes the peeling bar 91, the suction table 31 is temporarily stopped at the edge of the wafer 120. Thereby, the heating surface 95 of the peeling bar 91 presses the peeling tape 3 against the surface protective film 110 and heats it. Therefore, the adhesive force between the peeling tape 3 and the surface protective film 110 is partially increased. Therefore, as in the above-described embodiment, this portion functions as a peeling start location, and the surface protection film 110 is peeled off from the wafer 120 in the same manner. That is, it will be apparent that the same effect as described above can be obtained in the third embodiment.

  FIG. 7 is a side view showing a tape peeling apparatus according to the fourth embodiment of the present invention. In FIG. 7, the heating pressing unit 60 is installed above the suction table 31. The heating pressing unit 60 includes a casing 61, and a rod 62 that moves in the vertical direction is inserted into the casing 61. In FIG. 7, only the vicinity of the tip of the rod 62 is shown, and it is assumed that most of the rod 62 shown in FIG. 7 is inserted into the casing 61. The rod 62 is connected to an actuator (not shown), and moves up and down according to the operation of the actuator and rotates at a predetermined position.

  Further, as can be seen from FIG. 7, the disk 64 is connected to the vicinity of the tip of the rod 62 by the connecting portion 63. The diameter of the disk 64 is approximately equal to or greater than the diameter of the wafer 120. The disk 64 can be rotated together with the rod 62 or separately from the rod 62 according to an instruction from the control unit 89. Further, a cylindrical guide 69 having an inner diameter substantially equal to the diameter of the disk 64 is attached so as to extend downward from the edge of the disk 64. Further, at least one, for example, three pressing members 65 are provided on the lower surface of the disk 64. Of these three pressing members, the illustrated pressing members 65a and 65b include extension portions 68a and 68b and pressing rollers 66a and 66b attached to the respective ends of the extension portions 68a and 68b. The same applies to the remaining pressing members 65c not shown in FIG.

  FIG. 8 is a bottom view of the rotatable disc. The disk 64 shown in FIG. 8 is provided with three pressing members 65a, 65b and 65c. These pressing members 65a, 65b, and 65c are provided near the tips of the three grooves 71a, 71b, and 71c extending in the radial direction on the lower surface of the disk 64. Engaging portions (not shown) that engage with the grooves 71a, 71b, and 71c, respectively, are provided at the base ends of the extending portions 68a, 68b, and 68c of the pressing members 65a, 65b, and 65c. Is engaged with each of the grooves 71a, 71b, 71c, so that the pressing members 65a, 65b, 65c can be attached to the grooves 71a, 71b, 71c, respectively. In addition, the engaging portions of the extended portions 68a, 68b, and 68c can slide in the grooves 71a, 71b, and 71c, whereby the pressing members 65a, 65b, and 65c are moved to the desired positions of the grooves 71a, 71b, and 71c. It will be possible to position in position. Accordingly, even when the surface protection film 110 of the wafer 120 ′ having different dimensions is peeled off, the positions of the pressing members 65a, 65b, 65c are adjusted, and the peeling unit 100 of the present invention is attached to the wafer 120 ′ having different dimensions. Can be easily applied.

  Further, as can be seen from FIG. 8, the grooves 71a, 71b, 71c are formed so as to form an angle of about 120 ° with each other. Therefore, in FIG. 8, the three pressing members 65a, 65b, 65c They are provided at substantially equal intervals on the lower surface. In addition, at least one of the distances between two adjacent pressing members among the three pressing members 65a, 65b, and 65c is assumed to be larger than the width of the peeling tape 3.

  The pressing roller 66 of the pressing member 65 is attached so that the rotation shaft portion 67 of the pressing roller 66 faces the radial direction of the disk 64. Further, the tip end of the pressing roller 66 is substantially equal to the tip end of the cylindrical guide 69 or slightly below the tip end of the cylindrical guide 69.

  In the fourth embodiment, a heating wire (not shown) is incorporated in the pressing roller 66a of the pressing member 65a. At the time of use, the surface of the pressing roller 66a is heated to a temperature necessary for the peeling tape 3 to exhibit an adhesive force, for example, around 100 ° C.

  FIG. 9 is a partially enlarged view of the tape peeling device of the present invention showing a state in which the heating pressing portion is lowered. As described above, the heating and pressing unit 60 is operated in a state where the release tape 3 and the surface protective film 110 are in light contact. By driving an actuator (not shown), the rod 62 of the heating pressing unit 60 extends downward. The rod 62 extends by a predetermined length, whereby the heating pressing roller 66a of the pressing member 65 presses the surface protection film 110 via the peeling tape 3. As shown in FIG. 9, since the tip of the cylindrical guide 69 is in contact with the peeling tape 3 at this time, the tension applied to the peeling tape 3 at the time of pressing can be made relatively small.

  FIG. 10A is a plan view of the wafer showing the pressing location formed by the pressing member when the heating pressing portion is driven. In FIG. 10A, pressing portions 75 a, 75 b, and 75 c formed by the pressing member 65 are shown near the edge of the wafer 120. Of these three pressing points 75a, 75b, 75c, the pressing point 75a formed by the heating pressing roller 66a is formed at the edge of the wafer 120 as in the above-described embodiment. The remaining pressing portions 75b and 75c are formed on the surface protection film 110 of the wafer 120 where the peeling tape 3 does not exist. However, the pressing rollers 66b and 66c do not have a heating function, and the pressing rollers 66b and 66c are preferably set so as to be positioned outside the wafer 120 so as not to directly press the surface protection film 110. .

  Since the pressing part 75a is formed by the pressing action of the heating pressing roller 66a, the adhesive force between the peeling tape 3 and the surface protective film 110 is increased at the pressing part 75a. That is, after the heating and pressing unit 60 is driven, the adhesive force between the peeling tape 3 and the surface protective film 110 at the pressed portion 75 a is larger than the adhesive force between the surface protective film 110 and the wafer 120. However, the adhesive force between the peeling tape 3 and the surface protective film 110 is not greater than the attractive force between the wafer 120 and the suction table 31. Thus, the peeling part 44 is driven in the state which increased the adhesive force between the peeling tape 3 and the surface protection film 110 in the press location 75a. It will be apparent that this provides the same effect as described above.

  Further, after pressing the pressing member 65a against the surface protection film 110 with the release tape 3 interposed therebetween, the rod 62 can be rotated together with the disk 64 by a predetermined distance. FIG. 10B is a top view of the wafer and the peeling tape showing the locus of the pressing portion formed by the pressing member when the disk is rotated. As described above, the rotary shafts 67a, 67b, and 67c of the pressure rollers 66a, 66b, and 66c are located on the radius of the disk 64. Therefore, by rotating the rod 62 together with the disk 64, the pressure rollers 66a and 66b are rotated. , 66c, the pressing locations 75a ′, 75b ′, 75c ′ draw an arcuate locus. Since the diameter of the disk 64 is sufficiently larger than the width of the peeling tape 3, an arc-shaped pressing formed on the peeling tape 3 when the rotation shaft portion 67 a of the pressing roller 66 a is positioned on the center line of the peeling tape 3. The portion 75a ′ is directed in the substantially transverse direction of the peeling tape 3. Since the peeling portion 44 described above moves in the longitudinal direction of the peeling tape 3, when the pressing portion 75 a ′ is formed in a substantially transverse direction of the peeling tape 3, the entire one long side of the pressing portion 75 a ′ is almost simultaneously. The surface protective film 110 starts to be peeled off, and the surface protective film 110 can be evenly peeled from the wafer 120.

  It is preferable that the distance corresponding to the arc string of the pressing portion 75a ′ is smaller than the width of the peeling tape 3 and that the entire pressing portion 75a ′ is in the region of the peeling tape 3. Thereby, the loss of energy required to rotate the disk 64 to form the pressing portion 75a ′ in the region of the peeling tape 3 can be reduced.

  Further, it is preferable to reciprocate the pressing roller 66a on the locus of the pressing portion 75a ′ by rotating the disk 64 shown in FIG. 8 several times in one direction and then in the opposite direction. In such a case, the adhesive force between the peeling tape 3 and the surface protective film 110 at the pressing location 75a ′ can be significantly increased as compared with the case where the reciprocating motion is not performed. Therefore, in such a case, it is possible to reliably perform the peeling action of the surface protective film 110 by the peeling tape 3.

  Referring to FIG. 1 again, when the peeling of the surface protection film 110 in the peeling unit 100 is completed, the suction table 31 returns to the positioning unit 200 while sucking the wafer 120, and then the wafer 120 is reversed through a loader (not shown). Return to unit 300. At this time, since the surface of the wafer 120 is already facing upward, the wafer 120 passes through the reversing unit 300 without being reversed and is supplied to the recovery unit 500. In the collection unit 500, the wafers 120 are sequentially collected in a predetermined cassette. Next, the wafer 120 is supplied to an apparatus used in a subsequent process, for example, the dicing apparatus 2.

  Further, as described above, when only the single pressing member 65a is provided, the peeling unit 100 of the present invention does not necessarily include the disk 64. For example, the pressing member 65a is attached to the tip of the rod 62, and the pressing member 65a The pressing roller 66a may reciprocate with the release tape 3 pressed against the surface protective film 110 (see FIG. 11).

  Furthermore, in embodiment mentioned above, it demonstrated that the peeling tape 3 was a heat-sensitive peeling tape. However, even if the peeling tape 3 is a pressure-sensitive peeling tape, the peeling unit 100 of the present invention is applied if the heating pressing portion 83, the heating surface 95, and the pressing roller 66a are not accompanied by a heating action. Can do. That is, the peeling unit 100 of the present invention can be applied as it is to a pressure-sensitive peeling tape as long as energization to a heating wire (not shown) associated with the heating pressing portion 83 or the like is interrupted.

  By the way, in embodiment which is not shown in figure, the peeling tape 3 does not include the adhesive bond layer and may be formed only from the plastic material. That is, the release tape 3 may be a simple plastic film. The plastic film used in this case is preferably smaller than a relatively low softening point or melting point, for example a value of around 100 ° C. For example, a low-density polyethylene film, a polypropylene film, a polyvinyl chloride film, polystyrene, or the like can be used as the plastic film. The softening point or melting point is not necessarily about 100 ° C., and a plastic film having a softening point or melting point of 100 ° C. or higher can be used as long as a sufficient amount of heat can be applied to melt the film. May be.

  In such a case, if the plastic film is heated to the surface protective film 110 instead of the peeling tape 3 by the heating unit 80, the heating surface 95, and the pressing roller 66a, the plastic film is partially melted. Therefore, the adhesive force between the melted portion of the plastic film and the surface protection film 110 of the wafer 120 is increased. Thereby, the surface protection film 110 can be similarly collected using a plastic film. In such a case, it is obvious that the same effect as described above can be obtained. Furthermore, since such a plastic film is not provided with an adhesive layer, it is cheaper than a pressure-sensitive or heat-sensitive release tape including an adhesive layer. Therefore, if a plastic film is used in place of the peeling tape 3, the running cost of the film peeling apparatus can be suppressed.

  Naturally, it is within the scope of the present invention to appropriately combine the above-described embodiments.

DESCRIPTION OF SYMBOLS 2 Dicing apparatus 3 Release tape 5 Wafer processing apparatus 20 Wafer 31 Adsorption table 42 Supply part 43 Winding part 44, 44 'Release part 45 Roller 46 Peeling roller 47 Guide roller 60 Heating press part 62 Rod 64 Disk 65a, 65b, 65c Press Member 66a Heating pressure roller 66b, 66c Pressure roller 75a Pressing location 80 Heating portion 81 Cylinder 82 Plunger 83 Heating pressing portion 85, 85a Heating location 91 Peeling bar 93 Lower contact surface 95 Heating surface 100 Peeling unit (tape peeling device)
110 surface protective film 120 wafer 121 surface 125 edge

Claims (3)

In the film peeling apparatus for peeling the film stuck on the film sticking surface of the wafer,
Wafer adsorbing means for adsorbing the wafer such that the film sticking surface of the wafer is an upper surface;
A peeling tape feeding means for feeding the peeling tape onto the film of the film application surface;
Heating means for pressing and heating only a part of the release tape at the edge of the wafer against the film of the wafer;
The heating means comprises a rotatable disc;
Three pressing rollers are attached to the lower surface of the rotatable disc at equal intervals, and the respective rotation axes of the three pressing rollers are located on the radius of the rotatable disc,
At least one of the distances between two adjacent pressing rollers among the three pressing rollers is larger than the width of the peeling tape,
One of the three pressing rollers can heat the peeling tape,
During the rotation of the rotatable disk, the one pressing roller moves over the portion of the release tape at the edge of the wafer to heat the portion of the release tape, thereby Increasing the adhesion between the release tape and the film in the portion;
further,
A film peeling apparatus comprising peeling means for peeling the film from the film sticking surface of the wafer by the peeling tape, with the part of the peeling tape having increased adhesive strength as a peeling start location.   The film peeling apparatus according to claim 1, wherein the peeling means includes an edge member that contacts the wafer via the peeling tape.   The film peeling apparatus according to claim 1, wherein the peeling means includes an edge member that abuts on the wafer via the peeling tape, and the heating means is incorporated in the edge member of the peeling member.

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