JP2011023754A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011023754A5 JP2011023754A5 JP2010244941A JP2010244941A JP2011023754A5 JP 2011023754 A5 JP2011023754 A5 JP 2011023754A5 JP 2010244941 A JP2010244941 A JP 2010244941A JP 2010244941 A JP2010244941 A JP 2010244941A JP 2011023754 A5 JP2011023754 A5 JP 2011023754A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser element
- electrode
- layer
- blue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 description 747
- 235000005811 Viola adunca Nutrition 0.000 description 137
- 240000009038 Viola odorata Species 0.000 description 137
- 235000013487 Viola odorata Nutrition 0.000 description 137
- 235000002254 Viola papilionacea Nutrition 0.000 description 137
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 102
- 239000000758 substrate Substances 0.000 description 99
- 238000005253 cladding Methods 0.000 description 40
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 32
- 238000005530 etching Methods 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 29
- 238000000034 method Methods 0.000 description 26
- 229910000679 solder Inorganic materials 0.000 description 14
- 229910002704 AlGaN Inorganic materials 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 238000003776 cleavage reaction Methods 0.000 description 8
- 230000007017 scission Effects 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010244941A JP2011023754A (ja) | 2004-03-30 | 2010-11-01 | 半導体レーザ装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004101487 | 2004-03-30 | ||
| JP2010244941A JP2011023754A (ja) | 2004-03-30 | 2010-11-01 | 半導体レーザ装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005043388A Division JP4660224B2 (ja) | 2004-03-30 | 2005-02-21 | 半導体レーザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011023754A JP2011023754A (ja) | 2011-02-03 |
| JP2011023754A5 true JP2011023754A5 (enExample) | 2011-07-28 |
Family
ID=43633490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010244941A Pending JP2011023754A (ja) | 2004-03-30 | 2010-11-01 | 半導体レーザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2011023754A (enExample) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0846280A (ja) * | 1994-07-26 | 1996-02-16 | Mitsubishi Electric Corp | 半導体発光装置 |
| US6136623A (en) * | 1998-05-06 | 2000-10-24 | Xerox Corporation | Multiple wavelength laser arrays by flip-chip bonding |
| JP3486900B2 (ja) * | 2000-02-15 | 2004-01-13 | ソニー株式会社 | 発光装置およびそれを用いた光装置 |
| JP2004207480A (ja) * | 2002-12-25 | 2004-07-22 | Pioneer Electronic Corp | 半導体レーザ装置及びその製造方法 |
| JP4583128B2 (ja) * | 2004-03-30 | 2010-11-17 | 三洋電機株式会社 | 半導体レーザ装置 |
| JP2006128602A (ja) * | 2004-03-30 | 2006-05-18 | Sanyo Electric Co Ltd | 半導体レーザ装置およびその製造方法 |
-
2010
- 2010-11-01 JP JP2010244941A patent/JP2011023754A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4660224B2 (ja) | 半導体レーザ装置 | |
| US7881356B2 (en) | Semiconductor laser apparatus and method of manufacturing the same | |
| US20100260227A1 (en) | Semiconductor laser apparatus and fabrication method thereof | |
| US8442085B2 (en) | Semiconductor optical device | |
| US8275013B2 (en) | Semiconductor laser device and method of manufacturing the same | |
| JP4671728B2 (ja) | 半導体レーザ装置および光ピックアップ装置 | |
| EP1434320A2 (en) | Semiconductor laser device and method of manufacturing the same | |
| JP2010040752A (ja) | 半導体レーザ装置およびその製造方法 | |
| JP2002118331A (ja) | 集積型半導体発光装置及びその製造方法 | |
| US7817694B2 (en) | Semiconductor laser apparatus and manufacturing method thereof | |
| US7672351B2 (en) | Semiconductor laser apparatus | |
| JP2007035854A (ja) | 半導体レーザアレイ及び半導体レーザ装置 | |
| JP2005327826A (ja) | 集積型半導体レーザ装置、集積型半導体レーザ装置の製造方法、集積型半導体発光装置、集積型半導体発光装置の製造方法、光学ピックアップ装置および光ディスク装置 | |
| JP2011023754A (ja) | 半導体レーザ装置 | |
| KR100360143B1 (ko) | 반도체 레이저 소자 및 그의 제조방법 | |
| JP2004193302A (ja) | 半導体レーザ素子 | |
| JP5323008B2 (ja) | 半導体レーザ装置および光ピックアップ装置 | |
| JP2010153710A (ja) | 半導体レーザ装置およびその製造方法 | |
| JP2008066447A (ja) | 半導体発光素子およびその製造方法 | |
| JP2010258467A5 (enExample) | ||
| JP2011165708A (ja) | 半導体レーザ装置の製造方法および半導体レーザ装置 | |
| JP2010016095A (ja) | 半導体レーザ装置およびその製造方法 | |
| JP2010067868A (ja) | 半導体レーザ装置およびその製造方法 | |
| JP2010056185A (ja) | 半導体レーザ装置 | |
| JP2001244561A (ja) | 半導体発光装置及び半導体発光装置の製造方法 |