JP2010258467A5 - - Google Patents
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- Publication number
- JP2010258467A5 JP2010258467A5 JP2010144904A JP2010144904A JP2010258467A5 JP 2010258467 A5 JP2010258467 A5 JP 2010258467A5 JP 2010144904 A JP2010144904 A JP 2010144904A JP 2010144904 A JP2010144904 A JP 2010144904A JP 2010258467 A5 JP2010258467 A5 JP 2010258467A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser element
- light
- blue
- pad electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims description 811
- 230000003287 optical effect Effects 0.000 claims description 167
- 239000000758 substrate Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 235000005811 Viola adunca Nutrition 0.000 description 247
- 240000009038 Viola odorata Species 0.000 description 247
- 235000013487 Viola odorata Nutrition 0.000 description 247
- 235000002254 Viola papilionacea Nutrition 0.000 description 247
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 45
- 238000005253 cladding Methods 0.000 description 37
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 30
- 229910000679 solder Inorganic materials 0.000 description 27
- 230000000694 effects Effects 0.000 description 22
- 238000005530 etching Methods 0.000 description 22
- 238000012937 correction Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 230000004927 fusion Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 229910002704 AlGaN Inorganic materials 0.000 description 12
- 230000010287 polarization Effects 0.000 description 12
- 238000000605 extraction Methods 0.000 description 11
- 230000009471 action Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 229910015363 Au—Sn Inorganic materials 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 244000172533 Viola sororia Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010144904A JP5323008B2 (ja) | 2010-06-25 | 2010-06-25 | 半導体レーザ装置および光ピックアップ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010144904A JP5323008B2 (ja) | 2010-06-25 | 2010-06-25 | 半導体レーザ装置および光ピックアップ装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005089784A Division JP4671728B2 (ja) | 2005-03-25 | 2005-03-25 | 半導体レーザ装置および光ピックアップ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010258467A JP2010258467A (ja) | 2010-11-11 |
| JP2010258467A5 true JP2010258467A5 (enExample) | 2011-02-17 |
| JP5323008B2 JP5323008B2 (ja) | 2013-10-23 |
Family
ID=43318964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010144904A Expired - Fee Related JP5323008B2 (ja) | 2010-06-25 | 2010-06-25 | 半導体レーザ装置および光ピックアップ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5323008B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7608670B1 (ja) | 2024-10-21 | 2025-01-06 | 日特建設株式会社 | 地盤改良装置および地盤改良方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01164084A (ja) * | 1987-12-21 | 1989-06-28 | Canon Inc | 半導体レーザー装置 |
| JP3200916B2 (ja) * | 1992-02-14 | 2001-08-20 | セイコーエプソン株式会社 | 半導体レーザ及び半導体レーザ素子 |
| JPH11186651A (ja) * | 1997-12-19 | 1999-07-09 | Sony Corp | 集積型半導体発光装置 |
| JP2002025104A (ja) * | 2000-07-12 | 2002-01-25 | Hitachi Ltd | 集積光ヘッド装置 |
| JP2004022717A (ja) * | 2002-06-14 | 2004-01-22 | Sharp Corp | 多波長レーザ装置 |
| JP2005064430A (ja) * | 2003-08-20 | 2005-03-10 | Toshiba Corp | 多波長半導体レーザ |
| KR100541111B1 (ko) * | 2004-06-25 | 2006-01-11 | 삼성전기주식회사 | 다파장 반도체 레이저 제조방법 |
-
2010
- 2010-06-25 JP JP2010144904A patent/JP5323008B2/ja not_active Expired - Fee Related
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