JP2010258467A5 - - Google Patents

Description

Semiconductor laser device and optical pickup device

  The present invention relates to a semiconductor laser device capable of emitting a plurality of lights having different wavelengths and an optical pickup device including the same.

  Conventionally, semiconductor laser elements (infrared semiconductor laser elements) that emit infrared light having a wavelength of about 780 nm have been used as light sources in CD (compact disk) drives. Further, in a conventional DVD (digital versatile disk) drive, a semiconductor laser element (red semiconductor laser element) that emits red light having a wavelength of about 650 nm has been used as a light source.

  On the other hand, in recent years, a DVD that can be recorded and reproduced using blue-violet light having a wavelength of about 405 nm has been developed. For such DVD recording and reproduction, a DVD drive using a semiconductor laser element (blue-violet semiconductor laser element) emitting blue-violet light having a wavelength of about 405 nm is also being developed at the same time. This DVD drive requires compatibility with conventional CDs and DVDs.

  In this case, a method of providing a DVD drive with a plurality of optical pickup devices that respectively emit infrared light, red light, and blue-violet light, or an infrared semiconductor laser device, a red semiconductor laser device, and a blue-violet light in one optical pickup device. Compatibility with conventional CDs, DVDs and new DVDs is realized by the method of providing the semiconductor laser element. However, these methods lead to an increase in the number of parts, making it difficult to reduce the size of the DVD drive, simplify the configuration, and reduce the cost.

  In order to prevent such an increase in the number of parts, a semiconductor laser element in which an infrared semiconductor laser element and a red semiconductor laser element are integrated on one chip has been put into practical use.

  Since both the infrared semiconductor laser element and the red semiconductor laser element are formed on the GaAs substrate, one chip can be formed. However, since the blue-violet semiconductor laser element is not formed on the GaAs substrate, the blue-violet semiconductor laser element is red. It is very difficult to integrate the outer semiconductor laser element and the red semiconductor laser element on one chip.

  Therefore, a monolithic red / infrared semiconductor laser element is manufactured by forming an infrared semiconductor laser element and a red semiconductor laser element on the same chip, and a blue-violet semiconductor laser element is formed on a separate chip, and then a blue-violet semiconductor is formed. A light emitting device having a structure in which a laser element chip and a monolithic red / infrared semiconductor laser element chip are stacked has been proposed (see Patent Document 1).

When this light emitting device is mounted in an optical pickup device, the space occupied by the blue-violet semiconductor laser element, infrared semiconductor laser element, and red semiconductor laser element in the optical pickup device is reduced.
JP 2001-230502 A

  Incidentally, in the light emitting device as described above, the light emitting points of the respective semiconductor laser elements are separated from each other. Therefore, it is preferable that an optical pickup device incorporating a plurality of semiconductor laser elements is provided with an optical system and a light receiving element corresponding to each semiconductor laser element. In this case, the light emitted from the plurality of semiconductor laser elements can be accurately guided to the optical recording medium, and the reflected light from the optical recording medium can be accurately guided to the light receiving element. However, if an optical system and a light receiving element corresponding to each semiconductor laser element are provided in the optical pickup device, the optical pickup device is increased in size.

  In Patent Document 1, a light emitting device including a blue-violet semiconductor laser element, an infrared semiconductor laser element, and a red semiconductor laser element is recorded on and reproduced from an optical disk in which three semiconductor laser elements are provided with a common optical system and a common light receiving element. An example of implementation in the device is shown.

  However, the optical paths of the laser beams emitted from the blue-violet semiconductor laser element, the red semiconductor laser element, and the infrared semiconductor laser element do not match. Therefore, in order to perform accurate signal reproduction, tracking control, focus control, and tilt control, it is actually necessary to provide three light receiving elements corresponding to three laser beams in the optical disc recording / reproducing apparatus. Therefore, it is difficult to reduce the size of the optical disk recording / reproducing apparatus.

  An object of the present invention is to provide a semiconductor laser device that enables downsizing of an optical pickup device.

  Another object of the present invention is to provide an optical pickup device that can be miniaturized.

(1)
A semiconductor laser device according to a first aspect of the present invention includes a first semiconductor laser element having a first emission point that emits light having a first wavelength in a direction substantially parallel to the first direction, and a first direction. A second semiconductor laser element having a second light emitting point that emits light of a second wavelength different from a natural number multiple of the first wavelength in a substantially parallel direction; and a second semiconductor laser element in a direction substantially parallel to the first direction. A third semiconductor laser element having a third light emitting point that emits light of a third wavelength that is substantially a natural number multiple of the first wavelength, and in a first plane orthogonal to the first direction, The distance between the first light emission point and the third light emission point is the distance between the first light emission point and the second light emission point and the distance between the second light emission point and the third light emission point. Is smaller than at least one of the above.

  In the semiconductor laser device according to the present invention, light having the first wavelength is emitted from the first light emitting point of the first semiconductor laser element in a direction substantially parallel to the first direction, and the second semiconductor laser element Light having a second wavelength different from the natural number multiple of the first wavelength is emitted from the second light emitting point in a direction substantially parallel to the first direction, and is emitted from the third light emitting point of the third semiconductor laser element. Light having a third wavelength that is substantially a natural number times the first wavelength is emitted in a direction substantially parallel to the first direction.

  Since the third wavelength is substantially a natural number multiple of the first wavelength, the diffraction effect when the light of the first wavelength is incident on the diffraction grating and the light of the third wavelength are incident on the diffraction grating. In this case, the diffraction effect is substantially the same. On the other hand, since the second wavelength is different from a natural number multiple of the first wavelength, the diffraction effect when the light of the first wavelength is incident on the diffraction grating and the light of the second wavelength are incident on the diffraction grating. This is different from the diffractive action.

  Here, since the first light emission point and the third light emission point are present at different positions, the optical path of the light having the first wavelength does not exactly match the optical path of the light having the third wavelength.

  Therefore, when this semiconductor laser device is used for an optical pickup device, the optical pickup device includes a first photodetector that receives light of the first wavelength and a second optical detection that receives light of the third wavelength. Must be provided.

  On the other hand, by making the light of the second wavelength enter the diffraction grating, the light of the second wavelength can be guided to one of the first and second photodetectors. Therefore, the first and second photodetectors can receive light of the first, second, and third wavelengths.

  In this case, in the first plane, the distance between the first light emission point and the third light emission point is the distance between the first light emission point and the second light emission point and the second light emission point. The distance between the optical path of the first wavelength light and the optical path of the third wavelength light is smaller than the distance between at least one of the distances between the first light emitting point and the third light emitting point. Is smaller than at least one of the distance between the optical path of the second wavelength and the optical path of the light of the second wavelength and the distance between the optical path of the light of the second wavelength and the optical path of the light of the third wavelength.

  Thereby, the first and second photodetectors can be arranged close to each other in the optical pickup device. As a result, the arrangement space of the first and second photodetectors in the optical pickup device is reduced, and the optical pickup device can be downsized.

(2)
The first, second, and third light emitting points are disposed along a second direction that intersects the first direction, and the third light emitting point is defined by the first light emitting point and the second light emitting point. It may be located between. In this case, the first, third, and second light emitting points are arranged on a substantially straight line in this order along the second direction. Thereby, when this semiconductor laser device is used for an optical pickup device, the design of the optical pickup device becomes easy.

(3)
The first semiconductor laser element may include a first substrate, and the second direction may be substantially parallel to one surface of the first substrate. In this case, the first light emission point, the third light emission point, and the second light emission point are arranged along a straight line substantially parallel to one surface of the first substrate. Thereby, when this semiconductor laser device is used for an optical pickup device, the design of the optical pickup device becomes easy.

(4)
The second and third semiconductor laser elements may be bonded on the first semiconductor laser element. In this case, the first, second and third semiconductor laser elements can be integrated. Thereby, the semiconductor laser device can be miniaturized.

(5)
The first semiconductor laser element includes a first semiconductor layer having a first light emitting point, and a first electrode formed on the first semiconductor layer, and the second semiconductor laser element includes a second semiconductor laser element A second semiconductor layer having a light emitting point and a second electrode formed on the second semiconductor layer, and the third semiconductor laser element includes a third semiconductor layer having a third light emitting point. And a third electrode formed on the third semiconductor layer, and the second and third electrodes may be joined on the first electrode.

  In this case, the distance between the first light emitting point and the second and third light emitting points can be shortened in the direction perpendicular to the first semiconductor layer. As a result, it becomes easy to arrange the first, second, and third light emitting points on a substantially straight line in a direction parallel to the first semiconductor layer.

(6)
The second and third electrodes may be bonded to the first electrode via an insulating layer. Thereby, the first, second and third electrodes can be electrically separated from each other. Thereby, arbitrary voltages can be applied to the first, second and third electrodes, respectively. Therefore, it is possible to arbitrarily select the driving method of the first, second and third semiconductor laser elements.

(7)
You may further provide the connection part which connects a 2nd semiconductor laser element and a 3rd semiconductor laser element. In this case, since the second semiconductor laser element and the third semiconductor laser element are connected to each other by the connecting portion, the second and third light emitting points can be easily positioned with respect to the first light emitting point.

(8)
The semiconductor device may further include a submount having a surface parallel to the second direction, and the first, second, and third semiconductor laser elements may be bonded onto one surface of the submount. In this case, since the first, second, and third semiconductor laser elements are bonded on one surface of the submount, the first, second, and third light emitting points can be easily substantially linear on the one surface of the submount. Can be arranged. Thereby, when this semiconductor laser device is used for an optical pickup device, the design of the optical pickup device is facilitated.

(9)
The light of the first wavelength may be blue-violet light, the light of the second wavelength may be red light, and the light of the third wavelength may be infrared light. In this case, light of a plurality of colors can be emitted from one semiconductor laser device.

(10)
The first semiconductor layer may be made of a nitride semiconductor. In this case, the first semiconductor laser element can emit blue-violet light.

  The second semiconductor layer may be made of a gallium indium phosphide-based semiconductor. In this case, the second semiconductor laser element can emit red light.

  The third semiconductor layer may be made of a gallium arsenide semiconductor. In this case, the third semiconductor laser element can emit infrared light.

(11)
An optical pickup device according to a second aspect of the invention is an optical pickup device for irradiating light to an optical recording medium and detecting light returning from the optical recording medium, comprising the semiconductor laser device according to the first aspect of the invention. It is.

  In the optical pickup device according to the present invention, light of the first, second or third wavelength is selectively emitted from the semiconductor laser device according to the first invention. Here, according to the semiconductor laser device of the first invention, it is possible to guide the light of the first, second and third wavelengths to the two photodetectors. Therefore, it is not necessary to provide three optical detectors corresponding to light of the first, second, and third wavelengths in the optical pickup device. As a result, the arrangement space of the photodetectors in the optical pickup device is reduced, and the optical pickup device can be downsized.

(12)
First, second, and first, second, or third light that is emitted from the semiconductor laser device and guides the light of the first, second, or third wavelength to the optical recording medium and returns from the optical recording medium And an optical system that guides light of the third wavelength to the first or second photodetector.

  In this case, each of the light of the first, second, and third wavelengths fed back from the optical recording medium is guided to one of the first and second photodetectors. As a result, the arrangement space of the photodetectors in the optical pickup device is reduced, and the optical pickup device can be downsized.

(13)
The optical system directs light of the first and third wavelengths to the first and second photodetectors, respectively, and guides light of the second wavelength to one of the first and second photodetectors, A diffraction grating that transmits light of the first, second, and third wavelengths may be included.

  In this case, light of the first, second or third wavelength is selectively emitted from the semiconductor laser device according to the first aspect of the invention. The light having the first wavelength emitted from the semiconductor laser device is guided to the optical recording medium by the optical system, is fed back from the optical recording medium, and is guided to the first photodetector.

  The light of the third wavelength emitted from the semiconductor laser device is guided to the optical recording medium by the optical system, is fed back from the optical recording medium, and is guided to the second photodetector. Further, the light of the second wavelength emitted from the semiconductor laser device is guided to the optical recording medium by the optical system, is fed back from the optical recording medium, and is guided to one of the first and second photodetectors.

  Since the third wavelength is substantially a natural number multiple of the first wavelength, the diffraction action when light of the first wavelength passes through the diffraction grating and the light of the third wavelength pass through the diffraction grating. The diffraction effect is substantially the same. On the other hand, since the second wavelength is different from a natural number multiple of the first wavelength, the diffraction action when the light of the first wavelength passes through the diffraction grating and the light of the second wavelength pass through the diffraction grating. This is different from the diffraction effect.

  Here, since the first light emission point and the third light emission point are present at different positions, the optical path of the light having the first wavelength does not exactly match the optical path of the light having the third wavelength.

  Therefore, in the optical pickup device according to the present invention, a first photodetector that receives light of the first wavelength and a second photodetector that receives light of the third wavelength are provided.

  On the other hand, light of the second wavelength is transmitted through the diffraction grating, whereby light of the second wavelength is guided to one of the first and second photodetectors. Therefore, the first and second photodetectors can receive light of the first, second, and third wavelengths. As a result, the optical pickup device according to the present invention is provided with two photodetectors for receiving light of the first, second, and third wavelengths, so that downsizing is realized.

  Further, in the first plane, the distance between the first light emission point and the third light emission point is the distance between the first light emission point and the second light emission point and the second light emission point. By being smaller than at least one of the distances to the third light emitting point, the distance between the light path of the first wavelength light and the light path of the third wavelength light is reduced. The distance is smaller than at least one of the distance between the optical path and the optical path of the second wavelength light and the distance between the optical path of the second wavelength light and the optical path of the third wavelength light.

  Thereby, the first and second photodetectors can be arranged close to each other in the optical pickup device. As a result, the arrangement space of the first and second photodetectors in the optical pickup device is reduced, and the optical pickup device can be downsized.

(14)
The semiconductor laser device may be arranged such that the axis of the first wavelength light emitted from the first semiconductor laser element coincides with the optical axis of the optical system. In this case, the first wavelength light of the semiconductor laser device is emitted along the optical axis of the optical system. Thereby, the efficiency when light of the first wavelength passes through the optical system can be improved more than the efficiency when light of the second and third wavelengths passes through the optical system.

  A semiconductor laser device according to the present invention includes a first semiconductor laser element having a first emission point that emits light having a first wavelength, and light having a second wavelength different from a natural number multiple of the first wavelength. A second semiconductor laser element having a second light-emitting point that emits light; a third semiconductor laser element having a third light-emitting point that emits light having a third wavelength that is approximately a natural number multiple of the first wavelength; The distance between the first light emission point and the third light emission point is a distance between the first light emission point and the second light emission point, and the second light emission point and the third light emission point. Is less than at least one of the distances between. As a result, when the semiconductor laser device according to the present invention is used in an optical pickup device, the optical pickup device can be downsized.

  An optical pickup device according to the present invention is an optical pickup device that irradiates light to an optical recording medium and detects light returning from the optical recording medium, the semiconductor laser device according to the first invention, 1st, 2nd photodetector, and 1st, 2nd, or 2nd which guides the light of the 1st, 2nd or 3rd wavelength radiate | emitted from a semiconductor laser apparatus to an optical recording medium, and returns from an optical recording medium And an optical system that guides light having a wavelength of 3 to the first or second photodetector. The optical system is configured such that light having the first and third wavelengths is guided to the first and second photodetectors, respectively. And a diffraction grating that transmits light of the first, second, and third wavelengths so that the light of the second wavelength is guided to one of the first and second photodetectors.

  The optical pickup device according to the present invention is provided with two photodetectors for receiving light of the first, second, and third wavelengths, so that downsizing is realized.

  Hereinafter, a semiconductor laser device and an optical pickup device including the same according to an embodiment of the present invention will be described.

(1) a semiconductor laser device according to a first reference embodiment one reference embodiment of the present invention, a semiconductor laser device emitting a laser beam having a wavelength of about 405 nm (hereinafter, referred to as a blue-violet semiconductor laser element.), A wavelength of about A semiconductor laser element that emits laser light having a wavelength of 650 nm (hereinafter referred to as a red semiconductor laser element) and a semiconductor laser element that emits laser light having a wavelength of about 780 nm (hereinafter referred to as an infrared semiconductor laser element) are provided.

(A) Structure of Semiconductor Laser Device FIG. 1 is a schematic diagram for explaining the structure of a semiconductor laser device according to a first reference embodiment. Top view showing an example of a semiconductor laser device according to the first reference embodiment in FIGS. 1 (a) is shown, A1-A1 sectional view taken along line shown in FIG. 1 (a) is shown in FIG. 1 (b) . FIG. 2 is a schematic diagram of a junction surface between a blue-violet semiconductor laser element, a red semiconductor laser element, and an infrared semiconductor laser element in the semiconductor laser device of FIG.

  In FIGS. 1 and 2, three directions orthogonal to each other as indicated by arrows X, Y, and Z are defined as an X direction, a Y direction, and a Z direction. The X direction and the Y direction are directions parallel to pn junction surfaces 10, 20, and 30 of a blue-violet semiconductor laser element 1, a red semiconductor laser element 2, and an infrared semiconductor laser element 3 described later. The Z direction is a direction perpendicular to the pn junction surfaces 10, 20, and 30 of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3.

  As shown in FIGS. 1A and 1B, a striped ridge portion Ri extending in the X direction is formed on the upper surface of the blue-violet semiconductor laser device 1. The ridge portion Ri is located at a location deviated from the center of the blue-violet semiconductor laser device 1 in the Y direction. An insulating film 4a is formed on the side surface of the ridge portion Ri and on both sides of the ridge portion Ri so as to cover the upper surface of the blue-violet semiconductor laser device 1. A p-type ohmic electrode 621 is formed on the upper surface of the ridge portion Ri.

  A p-side pad electrode 12 is formed so as to cover the upper surface of the p-type ohmic electrode 621 and the insulating film 4a around the ridge portion Ri. An n-electrode 15 is formed on the lower surface of the blue-violet semiconductor laser device 1. In the blue-violet semiconductor laser element 1, a pn junction surface 10 which is a junction surface between a p-type semiconductor and an n-type semiconductor is formed.

In this reference embodiment, the red semiconductor laser element 2 and the infrared semiconductor laser element 3 are integrally formed. Hereinafter, the integrally formed red semiconductor laser element 2 and infrared semiconductor laser element 3 are referred to as monolithic red / infrared semiconductor laser element 23X.

  In this monolithic red / infrared semiconductor laser element 23X, the red semiconductor laser element 2 and the infrared semiconductor laser element 3 are fabricated on a common substrate. Details will be described later.

  A common n-electrode 233 is formed on the upper surfaces of the red semiconductor laser element 2 and the infrared semiconductor laser element 3. A p-side pad electrode 22 is formed on the lower surface of the red semiconductor laser element 2. The red semiconductor laser element 2 has a pn junction surface 20 that is a junction surface between a p-type semiconductor and an n-type semiconductor. A p-side pad electrode 32 is formed on the lower surface of the infrared semiconductor laser element 3. The infrared semiconductor laser element 3 has a pn junction surface 30 that is a junction surface between a p-type semiconductor and an n-type semiconductor.

  Although not shown in FIG. 1B, the red semiconductor laser element 2 and the infrared semiconductor laser 3 also have a striped ridge portion extending in the X direction. Therefore, a p-type ohmic electrode (not shown) is also formed in each ridge portion.

  In the Y direction, the monolithic red / infrared semiconductor laser element 23X has the infrared semiconductor laser element 3 positioned substantially at the center of the blue-violet semiconductor laser element 1, and the red semiconductor laser element 2 has the infrared semiconductor laser element 3. Is bonded to the blue-violet semiconductor laser device 1 so as to be located on the opposite side of the ridge portion Ri of the blue-violet semiconductor laser device 1 with reference to.

  The junction between the blue-violet semiconductor laser device 1 and the monolithic red / infrared semiconductor laser device 23X will be described.

  As shown in FIG. 2A, p-side pad electrodes 13 and 14 are formed on the insulating film 4 a of the blue-violet semiconductor laser device 1 in addition to the p-side pad electrode 12 described above.

  The p-side pad electrode 12 extends in the X direction along the ridge portion Ri of the blue-violet semiconductor laser device 1, and a part thereof extends in the Y direction.

  The p-side pad electrode 14 is formed so as to be adjacent to the p-side pad electrode 12. The p-side pad electrode 14 extends in the X direction at a substantially central portion of the blue-violet semiconductor laser device 1, and a part thereof extends in the Y direction in the same manner as the p-side pad electrode 12.

  The p-side pad electrode 13 is formed so as to be adjacent to the p-side pad electrode 14. The p-side pad electrode 13 extends in the X direction near the corner of the blue-violet semiconductor laser device 1, and a part of the p-side pad electrode 13 extends in the Y direction in the same manner as the p-side pad electrode 12.

  Each of the p-side pad electrodes 12, 13, and 14 is formed on the insulating film 4a so as to be separated from each other. Thereby, each of the p-side pad electrodes 12, 13, and 14 is electrically isolated from each other.

  As shown in FIG. 2B, the insulating film 4b is formed in a predetermined pattern on the insulating film 4a and the p-side pad electrodes 12, 13, and 14. The insulating film 4b is formed so that one end of the p-side pad electrodes 12, 13, and 14 extending in the Y direction is exposed. A wire for driving each semiconductor laser element is bonded to one end of the exposed p-side pad electrodes 12, 13, 14. Note that a region having a width of about 100 μm and a length of about 100 μm is exposed at one end of the p-side pad electrodes 12, 13, and 14 extending in the Y direction.

  Further, the insulating film 4b is formed so that a part of the p-side pad electrode 14 is exposed at a substantially central portion of the blue-violet semiconductor laser device 1. A solder film H made of Au—Sn is formed on the exposed portion of the p-side pad electrode 14.

  Furthermore, the insulating film 4b is formed so that the substantially central portion of the p-side pad electrode 13 is exposed. A solder film H made of Au—Sn is also formed on the exposed portion of the p-side pad electrode 13.

  The monolithic red / infrared semiconductor laser element 23X is bonded to the blue-violet semiconductor laser element 1 in FIG. 1 by bonding the p-side pad electrode 22 of the red semiconductor laser element 2 to the p-side pad electrode 13 through the solder film H. The p-side pad electrode 32 of the infrared semiconductor laser element 3 is bonded to the p-side pad electrode 14 via the solder film H.

  As a result, the p-side pad electrode 22 of the red semiconductor laser element 2 is electrically connected to the p-side pad electrode 13, and the p-side pad electrode 32 of the infrared semiconductor laser element 3 is electrically connected to the p-side pad electrode 14. Is done.

  In the above, since the monolithic red / infrared semiconductor laser element 23X is bonded onto the patterned insulating film 4b, the p-side pad electrode 32 and the p-side pad electrodes 12 and 13 of the infrared semiconductor laser element 3 are joined. Contact is prevented, and contact between the p-side pad electrode 22 and the p-side pad electrodes 12 and 14 of the red semiconductor laser element 2 is prevented.

  When a voltage is applied between the p-side pad electrode 12 and the n-electrode 15 of the blue-violet semiconductor laser device 1, a region below the ridge Ri in the pn junction surface 10 (hereinafter referred to as a blue-violet light emitting point). ) A laser beam having a wavelength of about 405 nm is emitted from 11 in the X direction.

  A voltage is applied between the p-side pad electrode 22 of the red semiconductor laser element 2 (p-side pad electrode 13 on the blue-violet semiconductor laser element 1) and the common n-electrode 233, whereby a predetermined value on the pn junction surface 20 is obtained. Laser light having a wavelength of about 650 nm is emitted in the X direction from the region (hereinafter referred to as a red light emitting point) 21.

  A voltage is applied between the p-side pad electrode 32 (p-side pad electrode 14 on the blue-violet semiconductor laser element 1) of the infrared semiconductor laser element 3 and the common n-electrode 233, whereby a predetermined value at the pn junction surface 30 is obtained. Laser beam having a wavelength of about 780 nm is emitted in the X direction from the region (hereinafter referred to as an infrared emission point) 31.

In the present reference, on the side of the ridge Ri in the blue-violet semiconductor laser device 1 in the Y direction, the infrared semiconductor laser element 3 and the red semiconductor laser element 2 are arranged in this order. Thereby, the distance between the blue-violet light emitting point 11 and the red light-emitting point 21 is the same as the distance between the blue-violet light-emitting point 11 and the infrared light-emitting point 31 and between the infrared light-emitting point 31 and the red light-emitting point 21. Longer than any of the distances. Further, in the Y direction, the infrared emission point 31 is located between the blue-violet emission point 11 and the red emission point 21.

In the present reference, the distance between the blue-violet emission point 11 and the infrared emission point 31 in the Y direction is adjusted, for example, about 110 [mu] m. Further, the interval between the red light emitting point 21 and the infrared light emitting point 31 in the Y direction is adjusted to, for example, about 90 μm.

  The width of the blue-violet semiconductor laser device 1 in the Y direction is, for example, about 400 μm. The width of the monolithic red / infrared semiconductor laser element 23X in the Y direction is, for example, about 200 μm.

  Note that the cross-sectional view of FIG. 1B is enlarged in the Z direction. Actually, the interval between the light emitting points in the Z direction is very small compared to the interval between the light emitting points in the Y direction. Therefore, in the actual semiconductor laser device 1000A, the blue-violet light emitting point 11, the red light emitting point 21, and the infrared light emitting point 31 are located on a substantially straight line along an axis parallel to the Y direction.

(B) as shown in effect view of the semiconductor laser device 1 (a), in the semiconductor laser device 1000A according to this reference embodiment, one end of the p-side pad electrode 12, 13, and 14 extending in the Y direction, violet On the insulating film 4a of the semiconductor laser element 1, it passes between the blue-violet semiconductor laser element 1 and the monolithic red / infrared semiconductor laser element 23X, and protrudes from the side surface of the monolithic red / infrared semiconductor laser element 23X in the Y direction. , Exposed. As a result, the exposed portions of the p-side pad electrodes 12, 13, and 14 extending in the Y direction are arranged on a substantially straight line in the X direction, so that the width in the Y direction of the blue-violet semiconductor laser device 1 can be reduced.

  Further, the exposed portions of the p-side pad electrodes 12, 13, and 14 extending in the Y direction are arranged on a substantially straight line in the X direction, whereby the monolithic red / infrared semiconductor laser element 23X on the blue-violet semiconductor laser element 1 in the Y direction. The arrangement space can be increased. Therefore, the width of the monolithic red / infrared semiconductor laser element 23X in the Y direction can be increased.

  Furthermore, the arrangement position of the monolithic red / infrared semiconductor laser element 23X on the blue-violet semiconductor laser element 1 can be brought close to the ridge portion Ri of the blue-violet semiconductor laser element 1. In this case, the interval between the blue-violet emission point 11 and the infrared emission point 31 can be reduced.

  As described above, the exposed portions of the p-side pad electrodes 12, 13, and 14 in the semiconductor laser device 1000A are required to have a predetermined size for bonding wires. Therefore, when the exposed portions of the p-side pad electrodes 12, 13, and 14 are arranged between the ridge portion Ri of the blue-violet semiconductor laser device 1 and the monolithic red / infrared semiconductor laser device 23X, a blue-violet light emitting point is obtained. 11 and the infrared light emitting point 31 cannot be reduced.

  Here, each of the p-side pad electrodes 12, 13, and 14 may be exposed on the opposite side to the monolithic red / infrared semiconductor laser device 23X with respect to the ridge portion Ri of the blue-violet semiconductor laser device 1 in the Y direction. However, in this case, the p-side pad electrode 14 of the infrared semiconductor laser element 3 intersects with the p-side pad electrode 12 extending in the X direction. Further, the p-side pad electrode 13 of the red semiconductor laser element 2 intersects with the p-side pad electrodes 12 and 14 extending in the X direction. In this case, it is necessary to newly provide an insulating film at the intersection of each p-side pad electrode.

In contrast, in the semiconductor laser device 1000A according to this reference embodiment, p-side pad electrode 12, 13, and 14 on the insulating film 4a of the blue-violet semiconductor laser device 1 do not cross, respectively. Therefore, the p-side pad electrodes 12, 13, and 14 can be simultaneously formed on the insulating film 4a. As a result, the manufacturing process is simple and the structure is simple.

  In the semiconductor laser device 1000A, the p-side pad electrode 12 formed on the semiconductor layer 1t of the blue-violet semiconductor laser element 1 and the semiconductor layers 2t and 3t of the monolithic red / infrared semiconductor laser element 23X are formed. The p-side pad electrodes 22 and 32 are joined via the solder film H. Thereby, the distance between the blue-violet light-emitting point 11, the red light-emitting point 21, and the infrared light-emitting point 31 can be shortened in the Z direction. As a result, the blue-violet emission point 11, the red emission point 21, and the infrared emission point 31 can be easily arranged on a substantially straight line in the Y direction.

(C) Mounting State of Semiconductor Laser Device in Laser Package The semiconductor laser device 1000A shown in FIG. 1 is mounted in the laser package. FIG. 3 is an external perspective view of a substantially circular can package for a laser on which the semiconductor laser device 1000A of FIG. 1 is mounted.

  In FIG. 3, the laser substantially circular can package 500 includes a conductive substantially circular can package main body 503, power supply pins 501 a, 501 b, 501 c, 502, and a lid 504.

  The substantially circular can package main body 503 is provided with the semiconductor laser device 1000 </ b> A shown in FIG. 1 and is sealed with a lid 504. The lid 504 is provided with an extraction window 504a. The extraction window 504a is made of a material that transmits laser light. The power supply pin 502 is mechanically and electrically connected to the substantially round can package body 503. The power feed pin 502 is used as a ground terminal.

  One ends of power supply pins 501a, 501b, 501c, and 502 extending outside the substantially round can package main body 503 are connected to drive circuits (not shown).

  Wiring using the wires of the semiconductor laser device 1000A mounted in the substantially round can package 500 for laser will be described. Hereinafter, the direction in which the laser light from the semiconductor laser element is emitted will be described as the front.

  4 is a schematic front view showing a state in which the lid 504 of the substantially circular can package 500 for laser shown in FIG. 3 is removed, and FIG. 5 shows the lid 504 of the substantially round can package 500 for laser shown in FIG. It is a typical top view which shows the state removed. In FIG. 4, the semiconductor laser device 1000 </ b> A provided in the substantially circular can package for laser 500 is shown by a cross section taken along line A <b> 1-A <b> 1 in FIG. 4 and 5, the X direction, the Y direction, and the Z direction are defined as in FIG.

  As shown in FIG. 4, a conductive submount 505 </ b> S is provided on a conductive support member 505 integrated with the substantially round can package main body 503. The support member 505 and the submount 505S are made of a material having excellent conductivity and thermal conductivity.

  The semiconductor laser device 1000A shown in FIG. 1 is bonded to the submount 505S via a fusion layer 505H. The adhesion of the semiconductor laser device 1000A to the submount 505S (fusion layer 505H) is such that the blue-violet light emitting point 11 of the blue-violet semiconductor laser element 1 is substantially in the center of the substantially circular can package 500 for laser in the YZ plane. It is performed so that it may be located in the center part of the extraction window 504a (refer FIG. 3) of the cover body 504.

  As shown in FIGS. 4 and 5, the power supply pins 501a, 501b, and 501c are electrically insulated from the substantially circular can package main body 503 by the insulating rings 501z, respectively.

  The power feed pin 501a is connected to one end of the p-side pad electrode 12 of the semiconductor laser apparatus 1000A through a wire W1. The power feed pin 501b is connected to one end of the p-side pad electrode 14 of the semiconductor laser apparatus 1000A through a wire W2. The power feed pin 501c is connected to one end of the p-side pad electrode 13 of the semiconductor laser apparatus 1000A via a wire W3.

  On the other hand, the exposed upper surface of the support member 505 and the common n-electrode 233 of the semiconductor laser device 1000A are electrically connected by a wire W4.

  Here, the support member 505 is electrically connected through the submount 505S and the fusion layer 505H. As a result, the feed pin 502 is electrically connected to the n-electrode 15 of the blue-violet semiconductor laser device 1 and the common n-electrode 233 of the red semiconductor laser device 2 and the infrared semiconductor laser device 3. That is, the cathode common connection of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 is realized.

  The blue-violet semiconductor laser device 1 can be driven by applying a voltage between the power supply pin 501a and the power supply pin 502. The infrared semiconductor laser element 3 can be driven by applying a voltage between the power supply pin 501 b and the power supply pin 502. The red semiconductor laser element 2 can be driven by applying a voltage between the power supply pin 501c and the power supply pin 502. Thus, the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 can be driven independently.

In the semiconductor laser device 1000A according to this reference embodiment, as described above, each of the p-side pad electrodes 12, 13 and 14 are electrically isolated from each other. Thereby, an arbitrary voltage can be applied to the p-side pad electrodes 12, 13 and 14 of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2 and the infrared semiconductor laser element 3. Therefore, it is possible to arbitrarily select a driving method for the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3.

(D) Effect of semiconductor laser device mounted on laser package The intensity of the laser light of blue-violet semiconductor laser element 1 is weaker than the intensity of the laser light of red semiconductor laser element 2 and infrared semiconductor laser element 3. . In this example, the blue-violet emission point 11 of the blue-violet semiconductor laser device 1 is located at the center of the extraction window 504 a of the lid 504. As a result, the laser beam of the blue-violet semiconductor laser device 1 is emitted from the center of the substantially round can package 500 for laser. Thereby, even if the laser substantially circular can package 500 is rotated with respect to the central axis of the laser substantially circular can package 500, the change in the position of the axis of the laser beam emitted from the blue-violet semiconductor laser device 1 is reduced. can do.

  Therefore, while increasing the light extraction efficiency of the blue-violet semiconductor laser device 1, the angle adjustment of the optical system such as a lens with respect to the central axis of the laser substantially circular can package 500 and the laser substantially circular can package 500. Angle adjustment can be easily performed. As a result, the design of the optical system becomes easy.

  In general, the laser light from the blue-violet semiconductor laser device 1 is used for recording and reproduction of the next-generation DVD (digital versatile disc), the laser light from the red semiconductor laser device 2 is used for recording and reproduction of a conventional DVD, and red The laser beam from the outer semiconductor laser element 3 is used for recording and reproduction of a CD (compact disc).

  Here, the above optical recording media have different pit density formed on the surface. For example, the density of pits formed on next generation and conventional DVDs is higher than the density of pits formed on CDs. Therefore, when recording and reproducing next-generation and conventional DVDs, it is necessary to perform signal processing at a higher speed than when recording and reproducing CDs.

  As described above, the blue-violet semiconductor laser device 1 and the red semiconductor laser device 2 corresponding to the next generation and the conventional DVD are required to have high response characteristics.

  As shown in FIGS. 4 and 5, in this example, the p-side pad electrode 14 of the infrared semiconductor laser element 3 is connected to the power supply pin 501 b located at the farthest location. On the other hand, the p-side pad electrodes 12 and 13 of the blue-violet semiconductor laser device 1 and the red semiconductor laser device 2 are respectively connected to power supply pins 501a and 501c located nearby.

  Thus, in this example, since the lengths of the wires W1 and W3 corresponding to the blue-violet semiconductor laser element 1 and the red semiconductor laser element 2 are shortened, the blue-violet semiconductor laser element 1 and the red semiconductor laser element 2 Response characteristics are improved.

  Further, as shown in FIG. 5, in this example, the p-side pad electrode 13 located at the position farthest from the laser light emission surface of the semiconductor laser apparatus 1000 </ b> A is opposed to the support member 505 via the wire W <b> 3. It is connected to the pin 501c. In other words, the p-side pad electrode 13 and the power feed pin 501c that are closest to the substantially round can package body 503 in the X direction are connected by the wire W3. This prevents the wires W1 to W3 connected between the p-side pad electrodes 12, 13, and 14 and the power supply pins 501a, 501b, and 501c from crossing each other.

  In this example, the exposed portion of the p-side pad electrode 12 of the blue-violet semiconductor laser element 1 is disposed on the laser beam emitting surface side of the semiconductor laser device 1000A in the X direction. The exposed portion of the p-side pad electrode 12 may be disposed on the opposite side to the laser light emission surface of the semiconductor laser device 1000A in the X direction. In this case, the p-side pad electrode 12 of the blue-violet semiconductor laser device 1 and the power feed pin 501c are connected by a wire. Further, the p-side pad electrode 13 of the red semiconductor laser element 2 and the power supply pin 501a are connected by a wire.

(E) A semiconductor laser device 1000A method for manufacturing according to the manufacturing method the reference mode of the semiconductor laser device will be described. 6 to 8 are schematic process cross-sectional views showing an example of a manufacturing method of the semiconductor laser apparatus 1000A according to the first reference embodiment. 6 to 8, the X, Y, and Z directions in FIG. 1 are defined.

  6 to 8 correspond to the cross section taken along line A1-A1 of FIG. Further, an n-GaN substrate 1s described later is an n-GaN wafer, and the n-GaAs substrate 50 is an n-GaAs wafer. A plurality of blue-violet semiconductor laser elements 1 and monolithic red / infrared semiconductor laser elements 23X are formed on these n-GaN wafer and n-GaAs wafer, respectively. Accordingly, FIGS. 6 to 8 show a part of these n-GaN wafer and n-GaAs wafer.

As shown in FIG. 6A, in order to produce the blue-violet semiconductor laser device 1, a semiconductor layer 1t having a stacked structure is formed on one surface of an n-GaN substrate 1s that is a first growth substrate. A ridge Ri having a convex cross section extending in the X direction is formed in the semiconductor layer 1t. Thereafter, an insulating film 4a made of SiO ₂ is formed on the upper surface of the semiconductor layer 1t in which the ridge portion Ri is formed. Further, the insulating film 4a on the upper surface of the ridge portion Ri is removed, and a p-type ohmic electrode 621 is formed on the exposed ridge portion Ri.

  Subsequently, as shown in FIG. 6B, p-side pad electrodes 12, 13, and 14 are formed by patterning on the upper surface of the p-type ohmic electrode 621 and the insulating film 4a on both sides of the ridge portion Ri (FIG. 2). (See (a)).

  Next, as shown in FIG. 6C, the insulating film 4b is formed by patterning in predetermined regions on the insulating film 4a and on the p-side pad electrodes 12, 13, and 14 (see FIG. 2B). . Therefore, a solder film H made of Au—Sn is formed on the upper surfaces of the exposed p-side pad electrodes 13 and 14. Note that the n-electrode 15 of the blue-violet semiconductor laser device 1 is formed in a later step.

  On the other hand, as shown in FIG. 7 (d), in order to fabricate the monolithic red / infrared semiconductor laser device 23X, an etching stop made of AlGaAs is formed on one surface of the n-GaAs substrate 50 which is the second growth substrate. The layer 51 is formed, and the n-GaAs contact layer 5 is formed on the etching stop layer 51.

  Then, the semiconductor layer 2t having an AlGaInP-based stacked structure and the semiconductor layer 3t having an AlGaAs-based stacked structure are formed on the n-GaAs contact layer 5 so as to be separated from each other. Further, the p-side pad electrode 22 is formed on the semiconductor layer 2t, and the p-side pad electrode 32 is formed on the semiconductor layer 3t. Although not shown in the drawing, p-type ohmic electrodes are formed between the semiconductor layer 2t and the p-side pad electrode 22 and between the semiconductor layer 3t and the p-side pad electrode 32, respectively. The common n electrode 233 of the monolithic red / infrared semiconductor laser element 23X is formed in a later step. Although not shown in FIG. 7D, ridge portions are also formed in the red semiconductor laser element 2 and the infrared semiconductor laser 3 as described above.

  Next, as shown in FIG. 7E, the p-side pad electrode 13 formed on the insulating film 4a and the p-side pad electrode 22 formed on the semiconductor layer 2t are joined via the solder film H. At the same time, the p-side pad electrode 14 formed on the insulating film 4a and the p-side pad electrode 32 formed on the semiconductor layer 3t are joined via the solder film H to form a laminated substrate.

  At this time, both the n-GaN substrate 1s and the n-GaAs substrate 50 have a thickness of about 300 to 500 μm. Thereby, the handling of the n-GaN substrate 1s and the n-GaAs substrate 50 is facilitated, and the p-side pad electrodes 22 and 32 are easily joined to the p-side pad electrodes 13 and 14.

  Further, the n-GaN substrate 1s of the blue-violet semiconductor laser device 1 is transparent. The n-GaN substrate 1s has such a transmittance and thickness that the monolithic red / infrared semiconductor laser element 23X can be seen through the n-GaN substrate 1s.

  Thereby, the joining position of the p-side pad electrodes 22 and 32 to the p-side pad electrodes 13 and 14 can be visually confirmed through the n-GaN substrate 1s. This facilitates positioning of the monolithic red / infrared semiconductor laser element 23X (red semiconductor laser element 2 and infrared semiconductor laser element 3) on the blue-violet semiconductor laser element 1.

Incidentally, in the present reference, the substrate of the blue-violet semiconductor laser element 1 is not limited to n-GaN substrate 1s, and may be used a conductive substrate other translucent. As another light-transmitting substrate, for example, an n-ZnO substrate can be used. In this case, as described above, the monolithic red / infrared semiconductor laser element 23X on the blue-violet semiconductor laser element 1 can be easily positioned.

  Here, the n-GaAs substrate 50 is processed to a predetermined thickness by etching or polishing, and then etched to the etching stop layer 51.

  For example, the n-GaAs substrate 50 is first polished until the n-GaAs substrate 50 has a predetermined thickness, and then removed by dry etching such as RIE (Reactive Ion Etching).

  Then, the etching stop layer 51 is further removed. For example, the etching stop layer 51 is removed by wet etching using an etchant made of hydrofluoric acid or hydrochloric acid.

  Thereafter, as shown in FIG. 8F, after the etching stop layer 51 is removed, a common n electrode 233 is formed in a region on the n-GaAs contact layer 5 above the semiconductor layers 2t and 3t and a predetermined region therebetween. Are formed by patterning.

  As shown in FIG. 8G, the portion of the n-GaAs contact layer 5 where the common n-electrode 233 is not formed is removed by dry etching. Thereby, monolithic red / infrared semiconductor laser element 23X (red semiconductor laser element 2 and infrared semiconductor laser element 3) is manufactured. Details of the structures of the red semiconductor laser element 2 and the infrared semiconductor laser element 3 will be described later.

  Further, after thinning the n-GaN substrate 1s by polishing, an n-electrode 15 is formed on the lower surface side of the n-GaN substrate 1s. Thereby, the blue-violet semiconductor laser device 1 is manufactured. Details of the structure of the blue-violet semiconductor laser device 1 will be described later.

  Finally, the laminated substrate composed of the blue-violet semiconductor laser device 1 and the monolithic red / infrared semiconductor laser device 23X produced as described above is cleaved along a plurality of lines parallel to the Y direction, and the resonator end face Form. Here, the cleavage along the Y direction is performed so that, for example, the resonator length (X direction) of each of the blue-violet semiconductor laser device 1 and the monolithic red / infrared semiconductor laser device 23X is about 700 μm.

  After forming a protective film on the end face of the resonator, it is cut along a plurality of lines parallel to the X direction to divide the chip into a plurality of semiconductor laser devices 1000A. Cutting the laminated substrate along the X direction is performed by, for example, a one-dot chain line CT1 in FIG.

  Alternatively, the chip of the blue-violet semiconductor laser element 1 and the chip of the monolithic red / infrared semiconductor laser element 23X may be separately prepared in advance, and the chips may be bonded together to manufacture the semiconductor laser device 1000A.

(F) Structure of Blue-violet Semiconductor Laser Element Details of the structure of the blue-violet semiconductor laser element 1 will be described together with the manufacturing method based on FIG.

  FIG. 9 is a schematic cross-sectional view for explaining details of the structure of the blue-violet semiconductor laser device 1. Also in the following description, the X direction, the Y direction, and the Z direction are defined as in FIG.

  At the time of manufacturing the blue-violet semiconductor laser device 1, the semiconductor layer 1t having a stacked structure is formed on the n-GaN substrate 1s as described above.

  As shown in FIG. 9A, an n-GaN layer 101, an n-AlGaN cladding layer 102, an n-GaN light guide layer 103, an MQW are formed on a n-GaN substrate 1s as a semiconductor layer 1t having a laminated structure. (Multiple quantum well) An active layer 104, an undoped AlGaN cap layer 105, an undoped GaN light guide layer 106, a p-AlGaN cladding layer 107, and an undoped GaInN contact layer 108 are formed in this order. These layers are formed by, for example, MOCVD (metal organic chemical vapor deposition).

  As shown in FIG. 9B, the MQW active layer 104 has a structure in which four undoped GaInN barrier layers 104a and three undoped GaInN well layers 104b are alternately stacked.

  Here, for example, the Al composition of the n-AlGaN cladding layer 102 is 0.15, and the Ga composition is 0.85. The n-GaN layer 101, the n-AlGaN cladding layer 102, and the n-GaN light guide layer 103 are doped with Si.

  The undoped GaInN barrier layer 104a has a Ga composition of 0.95 and an In composition of 0.05. The undoped GaInN well layer 104b has a Ga composition of 0.90 and an In composition of 0.10. The p-AlGaN cap layer 105 has an Al composition of 0.30 and a Ga composition of 0.70.

  Further, the p-AlGaN cladding layer 107 has an Al composition of 0.15 and a Ga composition of 0.85. The p-AlGaN cladding layer 107 is doped with Mg. The undoped GaInN contact layer 108 has a Ga composition of 0.95 and an In composition of 0.05.

  Of the semiconductor layer 1t, the p-AlGaN cladding layer 107 has a striped ridge portion Ri extending in the X direction. The ridge portion Ri of the p-AlGaN cladding layer 107 has a width of about 1.5 μm.

  The undoped GaInN contact layer 108 is formed on the upper surface of the ridge portion Ri of the p-AlGaN cladding layer 107.

An insulating film 4a made of SiO ₂ is formed on the upper surfaces of the p-AlGaN cladding layer 107 and the undoped GaInN contact layer 108, and the insulating film 4a formed on the undoped GaInN contact layer 108 is removed by etching. Then, a p-type ohmic electrode 621 made of Pd / Pt / Au is formed on the undoped GaInN contact layer 108 exposed to the outside. Further, the p-side pad electrode 12 is formed by sputtering, vacuum vapor deposition, or electron beam vapor deposition so as to cover the upper surfaces of the p-type ohmic electrode 621 and the insulating film 4a. Here, the description of the p-side pad electrodes 13 and 14 in FIG. 1 is omitted.

  Thus, the semiconductor layer 1t having a stacked structure is formed on one surface side of the n-GaN substrate 1s. Further, an n electrode 15 made of Ti / Pt / Au is formed on the other surface side of the n-GaN substrate 1s.

  In the blue-violet semiconductor laser device 1, a blue-violet light emitting point 11 is formed at the position of the MQW active layer 104 below the ridge portion Ri. In this example, the MQW active layer 104 corresponds to the pn junction surface 10 in FIG.

(G) Structure of Red Semiconductor Laser Element The details of the structure of the red semiconductor laser element 2 will be described together with the manufacturing method based on FIG.

FIG. 10 is a schematic cross-sectional view for explaining details of the structure of the red semiconductor laser device 2 of the monolithic red / infrared semiconductor laser device 23X. Also in the following description, the X direction, the Y direction, and the Z direction are defined as in FIG. Further, in the present reference embodiment, although the red semiconductor laser element 2 has to be prepared by forming a semiconductor layer 2t on the n-GaAs contact layer 5, in the following description, in place of the n-GaAs contact layer 5 A semiconductor layer 2t is formed on the n-GaAs substrate 5X. The n-GaAs substrate 5X is doped with Si.

  As shown in FIG. 10A, an n-GaAs layer 201, an n-AlGaInP clad layer 202, an undoped AlGaInP light guide layer 203, an MQW activity are formed on the n-GaAs substrate 5X as a semiconductor layer 2t having a stacked structure. A layer 204, an undoped AlGaInP light guide layer 205, a p-AlGaInP first cladding layer 206, a p-InGaP etching stop layer 207, a p-AlGaInP second cladding layer 208, and a p-contact layer 209 are sequentially formed. These layers are formed by, for example, the MOCVD method.

  As shown in FIG. 10B, the MQW active layer 204 has a structure in which two undoped AlGaInP barrier layers 204a and three undoped InGaP well layers 204b are alternately stacked.

  Here, for example, the Al composition of the n-AlGaInP cladding layer 202 is 0.70, the Ga composition is 0.30, the In composition is 0.50, and the P composition is 0.50. The n-GaAs layer 201 and the n-AlGaInP cladding layer 202 are doped with Si.

  The undoped AlGaInP light guide layer 203 has an Al composition of 0.50, a Ga composition of 0.50, an In composition of 0.50, and a P composition of 0.50.

  The undoped AlGaInP barrier layer 204a has an Al composition of 0.50, a Ga composition of 0.50, an In composition of 0.50, and a P composition of 0.50. The undoped InGaP well layer 204b has an In composition of 0.50 and a Ga composition of 0.50. The undoped AlGaInP light guide layer 205 has an Al composition of 0.50, a Ga composition of 0.50, an In composition of 0.50, and a P composition of 0.50.

  Furthermore, the Al composition of the p-AlGaInP first cladding layer 206 is 0.70, the Ga composition is 0.30, the In composition is 0.50, and the P composition is 0.50. The p-InGaP etching stop layer 207 has an In composition of 0.50 and a Ga composition of 0.50.

  The p-AlGaInP second cladding layer 208 has an Al composition of 0.70, a Ga composition of 0.30, an In composition of 0.50, and a P composition of 0.50.

  The p-contact layer 209 has a stacked structure of a p-GaInP layer and a p-GaAs layer. The p-GaInP has a Ga composition of 0.5 and an In composition of 0.5.

The composition of the AlGaInP-based material described above is such that a is an Al composition, b is a Ga composition, and c is an In composition when represented by the general formula (Al _a Ga _b ) _0.5 Inc _{c d} . d is a P composition.

  The p-AlGaInP first cladding layer 206, the p-InGaP etching stop layer 207, the p-AlGaInP second cladding layer 208, and the p-contact layer 209, p-GaInP and p-GaAs are doped with Zn.

  In the above, the formation of the p-AlGaInP second cladding layer 208 on the p-InGaP etching stop layer 207 is performed only on a part (center portion) of the p-InGaP etching stop layer 207. Then, a p-contact layer 209 is formed on the upper surface of the p-AlGaInP second cladding layer 208.

  Thereby, in the semiconductor layer 2t, the p-AlGaInP second cladding layer 208 and the p-contact layer 209 form a stripe-shaped ridge portion Ri extending in the X direction. The ridge Ri comprising the p-AlGaInP second cladding layer 208 and the p-contact layer 209 has a width of about 2.5 μm.

An insulating film 210 made of SiO ₂ is formed on the upper surface of the p-InGaP etching stop layer 207, the side surface of the p-AlGaInP second cladding layer 208, and the upper surface and side surfaces of the p-contact layer 209, and on the p-contact layer 209. The formed insulating film 210 is removed by etching. Then, a p-type ohmic electrode 211 made of Cr / Au is formed on the p-contact layer 209 exposed to the outside. Further, the p-side pad electrode 22 is formed by sputtering, vacuum vapor deposition, or electron beam vapor deposition so as to cover the upper surface of the p-type ohmic electrode 211 and the upper surface of the insulating film 210.

  Thus, the semiconductor layer 2t having a stacked structure is formed on one surface side of the n-GaAs substrate 5X. Further, an n electrode 23 (common n electrode 233) made of AuGe / Ni / Au is formed on the other surface side of the n-GaAs substrate 5X.

  In the red semiconductor laser device 2, a red light emitting point 21 is formed at the position of the MQW active layer 204 below the ridge portion Ri. In this example, the MQW active layer 204 corresponds to the pn junction surface 20 in FIG.

(H) Structure of Infrared Semiconductor Laser Element The details of the structure of the infrared semiconductor laser element 3 will be described together with the manufacturing method based on FIG.

FIG. 11 is a schematic cross-sectional view for explaining details of the structure of the infrared semiconductor laser device 3 of the monolithic red / infrared semiconductor laser device 23X. Also in the following description, the X direction, the Y direction, and the Z direction are defined as in FIG. Further, in the present reference embodiment, although the infrared semiconductor laser element 3 is set to be manufactured by forming a semiconductor layer 3t on the n-GaAs contact layer 5, in the following description, instead of the n-GaAs contact layer 5 Then, the semiconductor layer 3t is formed on the n-GaAs substrate 5X. The n-GaAs substrate 5X is doped with Si.

  As shown in FIG. 11A, an n-GaAs layer 301, an n-AlGaAs cladding layer 302, an undoped AlGaAs light guide layer 303, an MQW activity are formed on the n-GaAs substrate 5X as the semiconductor layer 3t having a laminated structure. A layer 304, an undoped AlGaAs light guide layer 305, a p-AlGaAs first cladding layer 306, a p-AlGaAs etching stop layer 307, a p-AlGaAs second cladding layer 308, and a p-GaAs contact layer 309 are sequentially formed. These layers are formed by, for example, the MOCVD method.

  As shown in FIG. 11B, the MQW active layer 304 has a structure in which two undoped AlGaAs barrier layers 304a and three undoped AlGaAs well layers 304b are alternately stacked.

  Here, for example, the Al composition of the n-AlGaAs cladding layer 302 is 0.45 and the Ga composition is 0.55. The n-GaAs layer 301 and the n-AlGaAs cladding layer 302 are doped with Si.

  The undoped AlGaAs light guide layer 303 has an Al composition of 0.35 and a Ga composition of 0.65. The undoped AlGaAs barrier layer 304a has an Al composition of 0.35 and a Ga composition of 0.65. The undoped AlGaAs well layer 304b has an Al composition of 0.10 and a Ga composition of 0.90. The undoped AlGaAs light guide layer 305 has an Al composition of 0.35 and a Ga composition of 0.65.

  Further, the Al composition of the p-AlGaAs first cladding layer 306 is 0.45, and the Ga composition is 0.55. The p-AlGaAs etching stop layer 307 has an Al composition of 0.70 and a Ga composition of 0.30.

  The p-AlGaAs second cladding layer 308 has an Al composition of 0.45 and a Ga composition of 0.55.

  The p-AlGaAs first cladding layer 306, the p-AlGaAs etching stop layer 307, the p-AlGaAs second cladding layer 308, and the p-GaAs contact layer 309 are doped with Zn.

  In the above, the formation of the p-AlGaAs second cladding layer 308 on the p-AlGaAs etching stop layer 307 is performed only on a part (center portion) of the p-AlGaAs etching stop layer 307. Then, a p-GaAs contact layer 309 is formed on the upper surface of the p-AlGaAs second cladding layer 308.

  Thereby, in the semiconductor layer 3t, the p-AlGaAs second cladding layer 308 and the p-GaAs contact layer 309 form a striped ridge portion Ri extending in the X direction. The ridge Ri comprising the p-AlGaAs second cladding layer 308 and the p-GaAs contact layer 309 has a width of about 2.8 μm.

  An insulating film 310 made of SiN is formed on the upper surface of the p-AlGaAs etching stop layer 307, the side surface of the p-AlGaAs second cladding layer 308, and the upper surface and side surfaces of the p-GaAs contact layer 309, and on the p-GaAs contact layer 309. The insulating film 310 formed in step 1 is removed by etching. Then, a p-type ohmic electrode 311 made of Cr / Au is formed on the p-GaAs contact layer 309 exposed to the outside. Further, the p-side pad electrode 32 is formed by sputtering, vacuum vapor deposition, or electron beam vapor deposition so as to cover the upper surface of the p-type ohmic electrode 311 and the upper surface of the insulating film 310.

  Thus, the semiconductor layer 3t having a stacked structure is formed on one surface side of the n-GaAs substrate 5X. Further, an n electrode 33 (common n electrode 233) made of AuGe / Ni / Au is formed on the other surface side of the n-GaAs substrate 5X.

  In the infrared semiconductor laser device 3, an infrared light emitting point 31 is formed at a position of the MQW active layer 304 below the ridge portion Ri. In this example, the MQW active layer 304 corresponds to the pn junction surface 30 in FIG.

(I) structural diagram of a semiconductor optical pickup device in which the laser device is built. 12 is a diagram showing a configuration of an optical pickup device according to this reference embodiment. In the following description, the laser light having a wavelength of about 405 nm emitted from the blue-violet emission point 11 of the semiconductor laser apparatus 1000A is referred to as blue-violet laser light, and the laser light having a wavelength of about 650 nm emitted from the red emission point 21 is red. This is called laser light, and laser light having a wavelength of about 780 nm emitted from the infrared emission point 31 is called infrared laser light. In FIG. 12, blue-violet laser light is indicated by a solid line, infrared laser light is indicated by a dotted line, and red laser light is indicated by a one-dot chain line.

As shown in FIG. 12, the optical pickup apparatus 900 according to this reference embodiment, the semiconductor laser device 1000A is substantially round-shaped can package mounted laser 500, a polarization beam splitter (hereinafter abbreviated as polarization BS.) 902 A collimator lens 903, a beam expander 904, a λ / 4 plate 905, an objective lens 906, a cylinder lens 907, an optical axis correction element 908, and two photodetectors 909a and 909b.

  In FIG. 12, three directions orthogonal to each other as indicated by arrows X, Y, and Z are defined as an X direction, a Y direction, and a Z direction. The X direction is a direction orthogonal to an optical recording medium (hereinafter referred to as an optical disk) DI to be reproduced. The Y direction and the Z direction are parallel to one surface of the optical disc DI and orthogonal to each other.

In the present reference, the semiconductor laser device 1000A substantially round-shaped can package 500 laser, which is implemented, the blue-violet emission point 11 of the semiconductor laser device 1000A, red emission point 21 and the infrared emission point 31, in the Y-direction It arrange | positions so that it may line up on a substantially straight line along. The planes of polarization of the laser beams emitted from the blue-violet emission point 11, the red emission point 21, and the infrared emission point 31 are parallel to each other.

  As described above, the blue-violet light emitting point 11 of the semiconductor laser device 1000A is located at a substantially central portion in the YZ plane of the substantially circular can package 500 for laser.

  In this example, the optical system including the polarization BS 902, the collimator lens 903, the beam expander 904, the λ / 4 plate 905 and the objective lens 906 is moved from the blue-violet emission point 11 (the central portion of the laser substantially circular can package 500) to X They are arranged in order along the optical axis of the blue-violet laser light emitted in the direction. That is, the optical axis of the optical system from the polarization BS 902 to the objective lens 906 is aligned with the optical axis of the blue-violet laser beam.

  The polarized light BS902 totally transmits each laser beam emitted from the semiconductor laser device 1000A and totally reflects the laser beam returning from the optical disk DI.

  The collimator lens 903 converts blue-violet laser light, red laser light, or infrared laser light from the semiconductor laser device 1000A that has passed through the polarization BS 902 into parallel light.

  The beam expander 904 includes a concave lens, a convex lens, and an actuator (not shown). The actuator changes the distance between the concave lens and the convex lens according to a servo signal from a servo circuit (not shown). As a result, the wavefront state of each laser beam emitted from the semiconductor laser apparatus 1000A is corrected.

  The λ / 4 plate 905 converts the linearly polarized laser light converted into parallel light by the collimator lens 903 into circularly polarized light. The λ / 4 plate 905 converts the circularly polarized laser beam returned from the optical disk DI into linearly polarized light. In this case, the polarization direction of the linearly polarized light is orthogonal to the polarization direction of the linearly polarized light of the laser light emitted from the semiconductor laser device 1000A. Thereby, the laser beam returning from the optical disk DI is almost totally reflected by the polarized light BS902.

  The objective lens 906 converges the laser light transmitted through the λ / 4 plate 905 on the surface (recording layer) of the optical disc DI.

  The objective lens 906 can be moved in the focus direction, tracking direction, and tilt direction by an objective lens actuator (not shown) in accordance with servo signals (tracking servo signal, focus servo signal, and tilt servo signal) from the servo circuit.

  A cylinder lens 907, an optical axis correction element 908, and photodetectors 909a and 909b are arranged along the optical axis of the laser light totally reflected by the polarized light BS902.

  The cylinder lens 907 imparts astigmatism to the incident laser light. The optical axis correction element 908 is formed by a diffraction grating. The optical axis correction element 908 guides the blue-violet laser light (0th-order diffracted light) transmitted through the cylinder lens 907 to the photodetector 909a. The optical axis correction element 908 guides infrared laser light (0th order diffracted light) to the photodetector 909b.

  Further, the optical axis correction element 908 diffracts the red laser light transmitted through the cylinder lens 907 and guides the red laser light (first-order diffracted light) to the photodetector 909a. In this case, the position of the condensing spot formed on the light receiving surface of the photodetector 909a by the blue-violet laser light matches the position of the condensing spot formed on the light receiving surface of the photodetector 909a by the red laser light. Thus, the optical axis correction element 908 is positioned.

  Each of the photodetectors 909a and 909b outputs a reproduction signal based on the intensity distribution of the received laser beam. Here, the photodetectors 909a and 909b have a predetermined pattern detection area so that a focus error signal, a tracking error signal, and a tilt error signal can be obtained together with the reproduction signal. The actuator of the beam expander 904 and the objective lens actuator are feedback-controlled by the focus error signal, tracking error signal, and tilt error signal.

(J) Effect of Optical Pickup Device Due to Structure of Semiconductor Laser Device As shown in FIG. 12, in the optical pickup device 900, the optical axis correction element 908 formed by the diffraction grating includes blue-violet laser light and infrared laser light. Alternatively, red laser light is incident.

  Here, in the diffraction grating, the diffractive action for light of a certain wavelength and light of a wavelength n times (n is a natural number) is the same. That is, the diffractive action when light of a certain wavelength is incident on the diffraction grating is the same as the diffractive action when light having a wavelength n times that wavelength is incident.

  Blue-violet laser light is laser light having a wavelength of about 405 nm, and infrared laser light is laser light having a wavelength of about 780 nm. Thereby, the infrared laser beam has a wavelength about twice that of the blue-violet laser beam. Therefore, the diffraction action when the blue-violet laser light is incident on the diffraction grating and the diffraction action when the infrared laser light is incident on the diffraction grating are substantially the same.

  Therefore, blue-violet laser light and infrared laser light cannot be diffracted in different directions using a common diffraction grating. As a result, the position of the condensing spot by the blue-violet laser beam and the position of the condensing spot by the infrared laser beam cannot be matched by diffraction.

Therefore, in the present reference, photodetector corresponding to each of the blue-violet laser light and infrared laser light passing through the optical axis correcting element 908 909a, are provided 909b.

  On the other hand, the wavelength of red laser light is not n times (n is a natural number) that of blue-violet laser light and infrared laser light. Therefore, the optical axis correction element 908 can give a diffractive action different from that of the blue-violet laser beam and the infrared laser beam with respect to the red laser beam.

  Thereby, the optical axis correction element 908 can easily match the position of the focused spot by the red laser beam with the position of the focused spot by the blue-violet laser beam and the infrared laser beam. As a result, the blue-violet laser beam and the red laser beam can be received by the common photodetector 909a.

Thus, in the optical pickup apparatus 900 according to this reference embodiment, the common optical detector 909a to blue-violet laser light and red laser light is used. Thereby, since it is not necessary to provide three photodetectors corresponding to each of blue-violet laser light, red laser light, and infrared laser light, downsizing of the optical pickup device 900 is realized.

In the semiconductor laser device 1000A according to this reference embodiment, the blue-violet emission point 11, the infrared emission point 31 and the red emission point 21 is disposed so as to be aligned in a substantially straight line in the forward in the Y-direction, the blue-violet emission point 11 And the interval between the infrared emission points 31 is shortened.

  Thereby, when the semiconductor laser device 1000A is built in the optical pickup device 900, the distance between the optical paths of the blue-violet laser beam and the infrared laser beam in the optical pickup device 900 is reduced. As a result, the two photodetectors 909a and 909b corresponding to the blue-violet laser beam and the infrared laser beam can be arranged close to each other. As a result, the arrangement space of the two photodetectors 909a and 909b in the optical pickup device 900 is reduced, and the optical pickup device 900 can be downsized.

  Further, in the semiconductor laser apparatus 1000A, the blue-violet light emitting point 11, the infrared light emitting point 31, and the red light emitting point 21 are arranged on a substantially straight line along the Y direction in this order. This facilitates the design of the optical pickup device 900 when the semiconductor laser device 1000A is used in the optical pickup device 900.

(K) In the optical pickup apparatus 900 according to another example the present reference embodiment of the optical pickup device, the generation of the focus error signal is performed using the astigmatic method. The tracking error signal is generated using, for example, a DPD (Differential Phase Detection) method.

  In the above, the position of the condensing spot formed on the photodetector 909a by the blue-violet laser light and the position of the condensing spot formed on the photodetector 909a by the red laser light are the cylinder lens 907 and the photodetector. These are matched by the optical axis correction element 908 arranged between 909a and 909b.

  Here, the optical axis correction element 908 may be provided in the optical system from the polarization BS 902 to the objective lens 906. For example, the optical axis correction element 908 is disposed between the semiconductor laser device 1000A and the polarization BS902. Also in this case, the position of the condensing spot formed on the photodetector 909a by the blue-violet laser beam and the position of the condensing spot formed on the photodetector 909a by the red laser beam can be matched.

  Further, in this example, the position of the condensing spot formed on the photodetector 909a by the blue-violet laser light is matched with the position of the condensing spot formed on the photodetector 909a by the red laser light. The red laser beam is guided to the photodetector 909b, and the position of the condensed spot formed on the photodetector 909b by the red laser beam is set at the position of the condensed spot formed on the photodetector 909b by the infrared laser beam. You may match. In this case, the photodetector 909b is a common photodetector for infrared laser light and red laser light.

(2) Second Reference Mode A semiconductor laser device according to the second reference mode has the same structure as the semiconductor laser device 1000A according to the first reference mode except for the following points.

(A) Structure of Semiconductor Laser Device FIG. 13 is a schematic diagram for explaining the structure of the semiconductor laser device according to the second reference embodiment. Top view showing an example of a semiconductor laser device according to a second reference embodiment in FIG. 13 (a), and FIG. 13 A2-A2 sectional view taken on line (a) is shown in Figure 13 (b) . Also in FIG. 13, the X direction, the Y direction, and the Z direction are defined as in FIG.

As shown in FIG. 13 (a) and 13 (b), in the blue-violet semiconductor laser element 1 of the semiconductor laser device 1000B according to this reference embodiment, cover the entire top surface of the p-type ohmic electrode 621 and the insulating film 4a Thus, the p-side pad electrode 12 is formed. A solder film H is formed in a predetermined region on the p-side pad electrode 12. Further, a monolithic red / infrared semiconductor laser element 23Y in which the red semiconductor laser element 2 and the infrared semiconductor laser element 3 are integrally formed is joined on the solder film H.

  Here, the monolithic red / infrared semiconductor laser element 23Y in FIG. 13 is different in structure from the monolithic red / infrared semiconductor laser element 23X in FIG. In the monolithic red / infrared semiconductor laser element 23Y of FIG. 13, the semiconductor layer 2t (see FIG. 10) of the red semiconductor laser element 2 and the semiconductor layer 3t (see FIG. 11) of the infrared semiconductor laser element 3 are connected. It is connected by BR.

  The connecting portion BR may include a part of the semiconductor layer 2 t of the red semiconductor laser element 2 or the semiconductor layer 3 t of the infrared semiconductor laser element 3. For example, the connecting portion BR may be a current confinement layer (for example, the insulating films 210 and 310 in FIGS. 10 and 11) that restricts the flow of current in the red semiconductor laser element 2 and the infrared semiconductor laser element 3, A p-type contact layer may also be used.

  As a result, the semiconductor layer 2t of the red semiconductor laser element 2, the semiconductor layer 3t of the infrared semiconductor laser element 3, and the connecting portion BR have mutually continuous planes. Therefore, in the monolithic red / infrared semiconductor laser element 23Y, the common p-side pad electrode 232 is formed on the continuous plane.

  The common p-side pad electrode 232 of the monolithic red / infrared semiconductor laser element 23Y is joined to the solder film H on the blue-violet semiconductor laser element 1. Here, the junction between the blue-violet semiconductor laser element 1 and the monolithic red / infrared semiconductor laser element 23Y is such that the ridge portion of the blue-violet semiconductor laser element 1 is more infrared-red than the red semiconductor laser element 2 in the Y-direction. It is performed so as to approach Ri.

  In the red semiconductor laser element 2 of the monolithic red / infrared semiconductor laser element 23Y, an n-electrode 23 is formed on the surface opposite to the common p-side pad electrode 232. In the infrared semiconductor laser element 3, an n-electrode 33 is formed on the surface opposite to the common p-side pad electrode 232.

(B) Mounting State of Semiconductor Laser Device in Laser Package FIG. 14 shows a state in which the semiconductor laser device 1000B in FIG. 13 is mounted in the substantially circular can package 500 for laser in FIG. 3 and the lid 504 is removed. It is a typical front view. Also in FIG. 14, the X direction, the Y direction, and the Z direction are defined as in FIG.

In the present reference, on the supporting member 505 of substantially round-shaped can package for laser 500 is formed submount 505Z insulating.

  As shown in FIG. 14, the semiconductor laser device 1000B of FIG. 13 is bonded onto the insulating submount 505Z via a fusion layer 505H.

  The power feed pin 501a is connected to the n-electrode 23 (the n-electrode 23 of the red semiconductor laser element 2) of the semiconductor laser device 1000B through the wire W1. The power supply pin 501b is connected to the fusion layer 505H exposed on the submount 505Z through the wire W2. The power feed pin 501c is connected to the n electrode 33 of the semiconductor laser apparatus 1000B (the n electrode 33 of the infrared semiconductor laser element 3) through the wire W3.

  On the other hand, the p-side pad electrode 12 exposed on the blue-violet semiconductor laser device 1 and the support member 505 are electrically connected by a wire W4.

  Here, the p-side pad electrode 12 on the blue-violet semiconductor laser device 1 is electrically connected to the common p-side pad electrode 232 of the monolithic red / infrared semiconductor laser device 23Y. As a result, the common anode connection of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 is realized.

  The red semiconductor laser element 2 can be driven by applying a voltage between the power supply pin 501 a and the power supply pin 502. The blue-violet semiconductor laser device 1 can be driven by applying a voltage between the power feed pin 501b and the power feed pin 502. The infrared semiconductor laser element 3 can be driven by applying a voltage between the power feed pin 501c and the power feed pin 502. Thus, the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 can be driven independently.

In the present reference, the distance between the blue-violet emission point 11 and the infrared emission point 31 in the Y direction is adjusted, for example, about 110 [mu] m. Further, the interval between the red light emitting point 21 and the infrared light emitting point 31 in the Y direction is adjusted to, for example, about 40 μm.

  The width of the blue-violet semiconductor laser device 1 in the Y direction is, for example, about 400 μm. The width of the monolithic red / infrared semiconductor laser element 23Y in the Y direction is, for example, about 200 μm.

(C) Effect of semiconductor laser device mounted on laser package Also in this reference embodiment, blue laser light emitting point 11 of blue-violet semiconductor laser device 1 is bonded to semiconductor laser device 1000B on submount 505Z. The lid 504 is positioned so as to be positioned at the center of the take-out window 504a (see FIG. 3). Thereby, the same effect as the first reference embodiment can be obtained.

In this reference embodiment, when the semiconductor laser device 1000B is mounted on the laser substantially circular can package 500, the power supply pins 501a to 501c are exposed at the top of the semiconductor laser device 1000B by the wires W1 to W3, and It is connected to the exposed fusion layer 505H. This facilitates connection of the wires W1 to W3 for the semiconductor laser device 1000B.

The semiconductor laser device 1000B according to this reference embodiment can be used for the optical pickup device 900 in FIG. 12. Thus, it is possible to obtain the same effect as in the first reference embodiment.

  Although not shown in FIGS. 13B and 14, the red semiconductor laser element 2 and the infrared semiconductor laser 3 also have a striped ridge portion extending in the X direction at the location where the common p-side pad electrode 232 is formed. Is formed. Therefore, a p-type ohmic electrode (not shown) is also formed in each ridge portion.

In this reference embodiment, a chip of blue-violet semiconductor laser device 1 and a chip of monolithic red / infrared semiconductor laser device 23Y are separately prepared in advance, and the semiconductor laser device 1000B is manufactured by bonding these chips together. May be.

(3) Third Reference Mode A semiconductor laser device according to the third reference mode has the same structure as the semiconductor laser device 1000A according to the first reference mode except for the following points.

(A) a semiconductor structure of a laser device Figure 15 is a schematic view for explaining the structure of a semiconductor laser device according to a third reference embodiment. Figure 15 a top view showing an example of a semiconductor laser device according to a third reference embodiment in (a) is shown, A3-A3 sectional view taken along line of FIG. 15 (a) is shown in FIG. 15 (b) . FIG. 16 is a schematic diagram of the junction surface between the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 in the semiconductor laser device of FIG. 15 and 16, the X direction, the Y direction, and the Z direction are defined as in FIG.

  As shown in FIGS. 15A and 15B, the ridge portion Ri of the blue-violet semiconductor laser device 1 is located at a location deviated from the center of the blue-violet semiconductor laser device 1 in the Y direction. On the blue-violet semiconductor laser element 1, the red semiconductor laser element 2 and the infrared semiconductor laser element 3 are individually joined.

  In the Y direction, the red semiconductor laser element 2 and the infrared semiconductor laser element 3 are arranged such that the infrared semiconductor laser element 3 is positioned at the approximate center of the blue-violet semiconductor laser element 1 and the red semiconductor laser element 2 is an infrared semiconductor. The laser element 3 is joined to the blue-violet semiconductor laser element 1 so as to be located on the opposite side of the ridge portion Ri of the blue-violet semiconductor laser element 1 with respect to the laser element 3.

  A junction between the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 will be described.

  As shown in FIG. 16A, on the insulating film 4a of the blue-violet semiconductor laser element 1, p corresponding to each of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 is formed. Side pad electrodes 12, 13, and 14 are formed.

  The p-side pad electrode 12 extends in the X direction along the ridge portion Ri of the blue-violet semiconductor laser device 1, and a part thereof extends in the Y direction.

  The p-side pad electrode 14 is formed so as to be adjacent to the p-side pad electrode 12. The p-side pad electrode 14 extends in the X direction at a substantially central portion of the blue-violet semiconductor laser device 1, and a part thereof extends in the Y direction opposite to the p-side pad electrode 12.

  The p-side pad electrode 13 is formed so as to be adjacent to the p-side pad electrode 14. The p-side pad electrode 13 extends in the X direction near the corner of the blue-violet semiconductor laser device 1, and a part thereof extends in the Y direction opposite to the p-side pad electrode 12.

  Each of the p-side pad electrodes 12, 13, and 14 is formed on the insulating film 4a so as to be separated from each other. Thereby, each of the p-side pad electrodes 12, 13, and 14 is electrically isolated from each other.

  As shown in FIG. 16B, the insulating film 4b is formed in a predetermined pattern on the insulating film 4a and the p-side pad electrodes 12, 13, and 14. The insulating film 4b is formed so that one end of the p-side pad electrodes 12, 13, and 14 extending in the Y direction is exposed.

  Here, the p-side pad electrode 12 extends in the Y direction opposite to the p-side pad electrodes 13 and 14, and the p-side pad electrodes 14 and 13 extend in the Y direction opposite to the p-side pad electrode 12. Therefore, the exposed part of the p-side pad electrode 12 is located on one side of the blue-violet semiconductor laser element 1 in the Y direction, and the exposed part of the p-side pad electrodes 13 and 14 is the other of the blue-violet semiconductor laser element 1 in the Y direction. Located on the side.

  A wire for driving each semiconductor laser element is bonded to one end of the exposed p-side pad electrodes 12, 13, 14. Note that a region having a width of about 100 μm and a length of about 100 μm is exposed at one end of the p-side pad electrodes 12, 13, and 14 extending in the Y direction.

  The insulating film 4b is formed so that a part of the p-side pad electrode 14 is exposed along the X direction at a substantially central portion of the blue-violet semiconductor laser device 1. A solder film H made of Au—Sn is formed on the exposed portion of the p-side pad electrode 14.

  Furthermore, the insulating film 4b is formed so that the substantially central portion of the p-side pad electrode 13 is exposed. A solder film H made of Au—Sn is also formed on the exposed portion of the p-side pad electrode 13.

  Therefore, as shown in FIG. 15, the p-side pad electrode 22 of the red semiconductor laser element 2 is bonded to the p-side pad electrode 13 via the solder film H, and the p-side pad electrode 32 of the infrared semiconductor laser element 3 is bonded to the solder film. Bonded to the p-side pad electrode 14 through H.

  As a result, the p-side pad electrode 22 of the red semiconductor laser element 2 is electrically connected to the p-side pad electrode 13, and the p-side pad electrode 32 of the infrared semiconductor laser element 3 is electrically connected to the p-side pad electrode 14. Is done.

  In the above description, since the red semiconductor laser element 2 and the infrared semiconductor laser element 3 are bonded on the patterned insulating film 4b, the p-side pad electrode 32 and the p-side pad electrode 12, 13 is prevented, and contact between the p-side pad electrode 22 and the p-side pad electrode 14 of the red semiconductor laser element 2 is prevented.

(B) Mounting State of Semiconductor Laser Device in Laser Package FIG. 17 shows a state in which the semiconductor laser device 1000C of FIG. 15 is mounted in the laser round can package 500 of FIG. 3 and the lid 504 is removed. 18 is a schematic front view, and FIG. 18 is a schematic top view showing a state in which the semiconductor laser device 1000C of FIG. 15 is mounted in the laser substantially circular can package 500 of FIG. 3 and the lid 504 is removed. In FIG. 17, the semiconductor laser device 1000 </ b> C provided in the substantially circular can package for laser 500 is shown by a cross section taken along line A <b> 3-A <b> 3 in FIG. 17 and 18, the X direction, the Y direction, and the Z direction are defined as in FIG.

As shown in FIGS. 17 and 18, a conductive submount 505 </ b> S similar to the first reference embodiment is provided on a conductive support member 505 integrated with the substantially circular can package main body 503. .

  The semiconductor laser device 1000C of FIG. 15 is bonded onto the submount 505S via the fusion layer 505H. Also in this example, when the semiconductor laser device 1000C is bonded to the submount 505S, the blue-violet light emitting point 11 of the blue-violet semiconductor laser element 1 is positioned at the center of the extraction window 504a (see FIG. 3) of the lid 504. To be done.

  The power feed pin 501a is connected to one end of the p-side pad electrode 14 of the semiconductor laser apparatus 1000C through a wire W1. The power feed pin 501b is connected to one end of the p-side pad electrode 12 of the semiconductor laser apparatus 1000C through a wire W2. The power feed pin 501c is connected to one end of the p-side pad electrode 13 of the semiconductor laser apparatus 1000C through a wire W3.

  On the other hand, the exposed upper surface of the support member 505 and the n electrodes 23 and 33 of the semiconductor laser apparatus 1000C are electrically connected by wires W4a and W4b.

  The support member 505 is electrically connected through the submount 505S and the fusion layer 505H. As a result, the feed pin 502 is electrically connected to the n-electrode 15 of the blue-violet semiconductor laser device 1 and the n-electrodes 23 and 33 of the red semiconductor laser device 2 and the infrared semiconductor laser device 3. That is, the cathode common connection of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 is realized.

  The infrared semiconductor laser element 3 can be driven by applying a voltage between the power supply pin 501 a and the power supply pin 502. The blue-violet semiconductor laser device 1 can be driven by applying a voltage between the power feed pin 501b and the power feed pin 502. The red semiconductor laser element 2 can be driven by applying a voltage between the power supply pin 501c and the power supply pin 502. Thus, the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 can be driven independently.

In the semiconductor laser device 1000C according to this reference embodiment, as described above, each of the p-side pad electrodes 12, 13 and 14 are electrically isolated from each other. Thereby, an arbitrary voltage can be applied to the p-side pad electrodes 12, 13 and 14 of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2 and the infrared semiconductor laser element 3. Therefore, it is possible to arbitrarily select a driving method for the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3.

In the present reference, the distance between the blue-violet emission point 11 and the infrared emission point 31 in the Y direction is adjusted, for example, about 110 [mu] m. Further, the interval between the red light emitting point 21 and the infrared light emitting point 31 in the Y direction is adjusted to, for example, about 190 μm.

  The width of the blue-violet semiconductor laser device 1 in the Y direction is, for example, about 700 μm. The width of each of the red semiconductor laser element 2 and the infrared semiconductor laser element 3 in the Y direction is, for example, about 200 μm.

Also in effect present reference embodiment in the mounted state of the laser package of (c) a semiconductor laser device, the adhesion of the semiconductor laser device 1000C to the submount 505S (fusion layer 505H) is a blue-violet semiconductor laser element 1 The blue-violet emission point 11 is performed so as to be positioned at the center of the take-out window 504a (see FIG. 3) of the lid 504. Thereby, the same effect as the first reference embodiment can be obtained.

As shown in FIG. 15 (a), in the semiconductor laser device 1000C according to this reference embodiment, the one end of the p-side pad electrodes 13 and 14 extending in the Y direction, on the insulating film 4a of the blue-violet semiconductor laser element 1 The blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 protrude between the red semiconductor laser element 2 in the Y direction and are exposed. As a result, the exposed portions of the p-side pad electrodes 13 and 14 extending in the Y direction are arranged on a substantially straight line in the X direction, so that the width of the blue-violet semiconductor laser device 1 in the Y direction can be reduced.

  Further, the exposed portions of the p-side pad electrodes 13 and 14 extending in the Y direction are arranged on a substantially straight line in the X direction, so that the red semiconductor laser element 2 and the infrared semiconductor laser element on the blue-violet semiconductor laser element 1 in the Y direction are arranged. 3 can be enlarged. Therefore, the widths of the red semiconductor laser element 2 and the infrared semiconductor laser element 3 in the Y direction can be increased.

Furthermore, in the present reference embodiment, the p-side pad electrode 12 extends on the opposite side of the Y-direction and p-side pad electrodes 13 and 14. The p-side pad electrode 12 is exposed at a position opposite to the red semiconductor laser element 2 and the infrared semiconductor laser element 3 with respect to the ridge portion Ri of the blue-violet semiconductor laser element 1 in the Y direction.

  Therefore, in the Y direction, the blue-violet emission point 11, the red emission point 21, and the infrared emission point 31 are located between the exposed portions of the p-side pad electrodes 12, 13, and 14. Thereby, the position where the wire is bonded is not located between the light emitting points in the Y direction, so that the arrangement positions of the red semiconductor laser element 2 and the infrared semiconductor laser element 3 are brought close to the ridge portion Ri of the blue-violet semiconductor laser element 1. Can do. In this case, the interval between the blue-violet emission point 11 and the infrared emission point 31 can be reduced.

  The exposed portions of the p-side pad electrodes 12, 13, and 14 are required to have a predetermined size for bonding wires. Therefore, when the exposed portions of the p-side pad electrodes 12, 13, and 14 are arranged between the ridge Ri of the blue-violet semiconductor laser device 1 and the infrared semiconductor laser device 3, the blue-violet light emitting point 11 and the infrared light emission The interval between the points 31 cannot be reduced.

In the semiconductor laser device 1000C according to this reference embodiment, p-side pad electrode 12, 13, and 14 on the insulating film 4a of the blue-violet semiconductor laser device 1 do not cross, respectively. Therefore, the p-side pad electrodes 12, 13, and 14 can be simultaneously formed on the insulating film 4a. As a result, the manufacturing process is simple and the structure is simple.

  As shown in FIG. 18, in this example, the p-side pad electrode 13 located at a position farther from the p-side pad electrode 14 from the laser light emission surface of the semiconductor laser apparatus 1000C is supported by the support member 505 via the wire W3. Is connected to a power feed pin 501c facing the. In other words, of the exposed portions of the p-side pad electrodes 13 and 14 arranged in the X direction, the p-side pad electrode 13 and the power supply pin 501c that are close to the substantially round can package body 503 are connected by the wire W3. This prevents the wires W1 to W3 connected between the p-side pad electrodes 13 and 14 and the power supply pins 501a and 501c from crossing each other.

  The arrangement of the exposed portions of the p-side pad electrodes 13 and 14 in the X direction may be interchanged. In this case, the p-side pad electrode 14 of the infrared semiconductor laser element 3 and the power supply pin 501c are connected by a wire. Further, the p-side pad electrode 13 of the red semiconductor laser element 2 and the power supply pin 501a are connected by a wire.

The semiconductor laser device 1000C according to this reference embodiment can be used for the optical pickup device 900 in FIG. 12. Thus, it is possible to obtain the same effect as in the first reference embodiment.

  Although not shown in FIGS. 15B and 17, the red semiconductor laser element 2 and the infrared semiconductor laser 3 also have striped ridge portions extending in the X direction at the positions where the p-side pad electrodes 22 and 32 are formed. Is formed. Therefore, a p-type ohmic electrode (not shown) is also formed in each ridge portion.

In the present reference fabricating a semiconductor laser device 1000C by pre blue-violet semiconductor laser element 1, a chip of the red semiconductor laser element 2 and the infrared semiconductor laser element 3 manufactured separately, bonded to their chips to each other May be.

(4) Fourth Embodiment A semiconductor laser device according to the fourth embodiment has the same structure as the semiconductor laser device 1000A according to the first reference embodiment except for the following points.

(A) Structure of Semiconductor Laser Device FIG. 19 is a schematic diagram for explaining the structure of the semiconductor laser device according to the fourth embodiment. FIG. 19A shows a top view showing an example of a semiconductor laser device according to the fourth embodiment, and FIG. 19B shows a cross-sectional view taken along line A4-A4 of FIG. 19A. . FIG. 20 is a schematic diagram of the junction between the blue-violet semiconductor laser element and the monolithic red / infrared semiconductor laser element and the submount in the semiconductor laser device of FIG. 19 and 20, the X direction, the Y direction, and the Z direction are defined as in FIG.

  As shown in FIGS. 19A and 19B, the semiconductor laser apparatus 1000D according to the present embodiment includes a blue-violet semiconductor laser element 1, a monolithic red / infrared semiconductor laser element 23X, a solder film H, 3 Two p-side pad electrodes 12z, 13z, 14z, an insulating film 4c, and an insulating submount 505Z are included.

  In the present embodiment, the submount 505Z is a plate-like member having a rectangular shape, and is arranged in parallel to the XY plane. In the following description, as shown in FIGS. 19A and 19B, one end surface of the submount 505Z in the X direction is referred to as a laser end surface 505X.

  As shown in FIG. 19B, the p-side pad electrode 12 of the blue-violet semiconductor laser device 1 is bonded on the insulating submount 505Z. The p-side pad electrodes 22 and 32 of the monolithic red / infrared semiconductor laser element 23X are joined on the insulating submount 505Z and to the side of the blue-violet semiconductor laser element 1 in the Y direction.

  In other words, in the present embodiment, semiconductor laser apparatus 1000D has a junction-down structure in which the p-side pad electrodes of blue-violet semiconductor laser element 1 and monolithic red / infrared semiconductor laser element 23X are joined on submount 505Z. .

  In FIG. 19B, the ridge Ri is illustrated only for the blue-violet semiconductor laser element 1, but the red semiconductor laser element 2 and the infrared semiconductor laser element 3 of the monolithic red / infrared semiconductor laser element 23X are also illustrated. Similarly, a ridge portion (not shown) is formed.

  A junction between the submount 505Z, the blue-violet semiconductor laser device 1, and the monolithic red / infrared semiconductor laser device 23X will be described.

  As shown in FIG. 20A, on the insulating film 4a of the blue-violet semiconductor laser element 1, p corresponding to each of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 is formed. Side pad electrodes 12z, 13z, and 14z are formed.

  The p-side pad electrode 12z is formed to extend in the X direction on one side of the submount 505Z in the Y direction. The p-side pad electrode 13z is formed to extend in the X direction on the other side of the submount 505Z in the Y direction.

  The p-side pad electrode 14z is formed so as to extend in the X direction at a substantially central portion of the submount 505Z in the Y direction and to extend in the Y direction on one end side of the submount 505Z in the X direction.

  Here, the p-side pad electrodes 12z, 13z, and 14z are separated from each other on the insulating submount 505Z. As a result, the p-side pad electrodes 12z, 13z, and 14z are electrically separated from each other.

  As shown in FIG. 20B, a solder film H is formed in a predetermined region on the p-side pad electrodes 12z, 13z, and 14z. On the solder film H on the p-side pad electrode 12z, an insulating film 4c extending in the X direction is further formed. The solder film H is formed according to the joint location of each semiconductor laser element set in advance on the p-side pad electrodes 12z, 13z, and 14z.

  When the blue-violet semiconductor laser device 1 is bonded onto the submount 505Z, the blue-violet semiconductor laser device 1 is aligned on the solder film H on the p-side pad electrode 12z and the ridge portion Ri of the blue-violet semiconductor laser device 1 is used. Are aligned on the insulating film 4c.

  When the monolithic red / infrared semiconductor laser element 23X is bonded onto the submount 505Z, the red semiconductor laser element 2 is aligned on the solder film H on the p-side pad electrode 13z, and the infrared semiconductor laser element 3 is It is aligned on the solder film H on the p-side pad electrode 14z.

  As a result, on the submount 505Z, the blue-violet semiconductor laser element 1, the infrared semiconductor laser element 3, and the red semiconductor laser element 2 are arranged in order in the Y direction on the laser end face 505X side. The p-side pad electrode 12 and the p-side pad electrode 12z, the p-side pad electrode 22 and the p-side pad electrode 13z, and the p-side pad electrode 32 and the p-side pad electrode 14z are respectively Are electrically connected to each other.

  The p-side pad electrodes 12, 22, and 32 of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 are electrically separated from each other on the insulating submount 505Z.

Here, as described above, the ridge Ri of the blue-violet semiconductor laser device 1 is located on the insulating film 4c. As described above, the insulating film 4c is arranged between the solder film H and the p-side pad electrode 12 and the p-type ohmic electrode 621 located in the formation region of the ridge portion Ri, whereby the solder film H and the p-side pad electrode are arranged. 12 and p-type ohmic electrode 621 are prevented from being alloyed. As a result, an increase in contact resistance in the semiconductor layer 1t (see FIG. 11) of the blue-violet semiconductor laser device 1 is prevented. The insulating film 4c is made of, for example, of SiO _2.

  In the present embodiment, the interval between the blue-violet emission point 11 and the infrared emission point 31 in the Y direction is adjusted to, for example, about 110 μm. Further, the interval between the red light emitting point 21 and the infrared light emitting point 31 in the Y direction is adjusted to, for example, about 190 μm.

  Here, as shown in FIG. 19B, in the Y direction, the blue-violet emission point 11 is formed so as to be located closer to the infrared emission point 31 than the center of the blue-violet semiconductor laser device 1. By forming the blue-violet emission point 11 in this way, the interval between the blue-violet emission point 11 and the infrared emission point 31 can be reduced.

  In the present embodiment, the resonator length of the blue-violet semiconductor laser element 1 extending in the X direction is, for example, about 600 μm. Further, the resonator length of the monolithic red / infrared semiconductor laser element 23X extending in the X direction is, for example, about 1200 μm.

(B) Mounting State of Semiconductor Laser Device in Laser Package FIG. 21 shows a state in which the semiconductor laser device 1000D in FIG. 19 is mounted in the substantially circular can package 500 for laser in FIG. 3 and the lid 504 is removed. It is a typical front view. Also in FIG. 21, the X direction, the Y direction, and the Z direction are defined as in FIG.

  As shown in FIG. 21, the submount 505Z of the semiconductor laser apparatus 1000D of FIG. 19 is provided on the support member 505 of the substantially circular can package 500 for laser.

  Here, formation of the p-side pad electrodes 12z, 13z, and 14z on the submount 505Z, and the blue-violet semiconductor laser device 1 and the monolithic red / infrared semiconductor laser device 23X on the p-side pad electrodes 12z, 13z, and 14z The blue-violet light emitting point 11 of the blue-violet semiconductor laser device 1 is bonded so as to be positioned at the center of the extraction window 504a (see FIG. 3) of the lid 504.

  Further, the semiconductor laser device 1000D is disposed on the support member 505 so that the laser end surface 505X of the submount 505Z is positioned on the light emitting surface side of the substantially circular can package 500 for laser (on the extraction window 504a side of the lid 504). Is done.

  In this semiconductor laser device 1000D, as shown in FIG. 19, a wire is bonded to the exposed portion of the p-side pad electrode 12z on the side of the blue-violet semiconductor laser element 1 in the Y direction. A wire is bonded to the exposed portion of the p-side pad electrode 13z on the side of the monolithic red / infrared semiconductor laser element 23X in the Y direction. Further, a wire is bonded to the exposed portion of the p-side pad electrode 14z on one end side of the monolithic red / infrared semiconductor laser element 23X in the X direction.

  The power feed pin 501a is connected to the p-side pad electrode 13z of the semiconductor laser apparatus 1000D through a wire W1. The power feed pin 501b is connected to the p-side pad electrode 12z of the semiconductor laser apparatus 1000D through a wire W2. The power feed pin 501c is connected to the p-side pad electrode 14z of the semiconductor laser apparatus 1000D through a wire W3.

  On the other hand, the exposed upper surface of support member 505 is electrically connected to n electrode 15 and common n electrode 233 of semiconductor laser apparatus 1000D by wires W4a and W4b.

  The conductive support member 505 is electrically separated from the p-side pad electrodes 12z, 13z, and 14z of the semiconductor laser device 1000D by an insulating submount 505Z.

  On the other hand, support member 505 is electrically connected to n electrode 15 and common n electrode 233 of semiconductor laser apparatus 1000D by wires W4a and W4b. The common n electrode 233 of the monolithic red / infrared semiconductor laser element 23X is electrically connected. That is, the cathode common connection of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 is realized.

  The red semiconductor laser element 2 can be driven by applying a voltage between the power supply pin 501 a and the power supply pin 502. The blue-violet semiconductor laser device 1 can be driven by applying a voltage between the power feed pin 501b and the power feed pin 502. The infrared semiconductor laser element 3 can be driven by applying a voltage between the power feed pin 501c and the power feed pin 502. Thus, the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 can be driven independently.

(C) Effect of Semiconductor Laser Device Mounted on Laser Package In this embodiment, the mounting of the semiconductor laser device 1000D on the substantially round can package 500 for laser is performed by the blue-violet semiconductor laser device 1 in blue. The purple light emission point 11 is performed so as to be located at the center of the extraction window 504a (see FIG. 3) of the lid 504. Thereby, the same effect as the first reference embodiment can be obtained.

  In the present embodiment, the p-side pad electrodes 12z, 13z, and 14z formed on the submount 505Z do not intersect each other. Therefore, the p-side pad electrodes 12z, 13z, and 14z can be simultaneously formed on the submount 505Z. As a result, the manufacturing process is simple and the structure is simple.

The semiconductor laser device 1000D according to the present embodiment can be used for the optical pickup device 900 of FIG. Thus, it is possible to obtain the same effect as in the first reference embodiment.

  In the present embodiment, the semiconductor laser apparatus 1000D has a junction down structure on the submount 505Z. However, in the semiconductor laser device 1000D, the blue-violet semiconductor laser element 1 and the monolithic red / infrared semiconductor laser element 23X have substantially the same thickness, and the blue-violet semiconductor laser element 1 and the monolithic red / red on the submount 505Z. It may have a junction-up structure in which the n electrode 15 and the common n electrode 233 of the outer semiconductor laser element 23X are joined.

(5) Fifth Reference Mode A semiconductor laser device according to the fifth reference mode has the same structure as the semiconductor laser device 1000A according to the first reference mode except for the following points.

(A) the structure of the semiconductor laser device Figure 22 is a schematic view for explaining the structure of a semiconductor laser device according to a fifth reference embodiment. FIG. 22A shows a top view showing an example of the semiconductor laser device according to the fourth embodiment, and FIG. 22B shows a cross-sectional view taken along line A5-A5 of FIG. 22A. .

As shown in FIG. 22 (a) and FIG. 22 (b), the semiconductor laser device 1000E according to this reference embodiment, the blue-violet semiconductor laser device 1, the red semiconductor laser element 2, the infrared semiconductor laser element 3, the solder layer H, a fusion layer 505H, and a conductive submount 505S.

In this reference embodiment, the submount 505S is a plate-like member having a rectangular shape, and is arranged in parallel to the XY plane. In the following description, as shown in FIGS. 22A and 22B, one end face of the submount 505S in the X direction is referred to as a laser end face 505X.

  As shown in FIG. 19B, each of the n-electrodes 15 of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 on the conductive submount 505S (fusion layer 505H), 23 and 33 are joined.

That is, in the present reference, the semiconductor laser device 1000E submount 505S on the blue-violet semiconductor laser element 1, the junction-up configuration in which each n-electrode of the red semiconductor laser element 2 and the infrared semiconductor laser element 3 is joined Have.

The basic structure of the blue-violet semiconductor laser device 1 is the same as that of the blue-violet semiconductor laser device 1 used in the first reference embodiment. In FIG. 22, the red semiconductor laser device 2 and the infrared semiconductor laser device 3 have the following structures.

  As shown in FIGS. 22A and 22B, a striped ridge portion Ri extending in the X direction is formed on the upper surface of the red semiconductor laser element 2. An insulating film 4d is formed on the side surface of the ridge portion Ri and on both sides of the ridge portion Ri so as to cover the upper surface of the red semiconductor laser element 2. A p-type ohmic electrode 621b is formed on the upper surface of the ridge portion Ri. A p-side pad electrode 22 is formed so as to cover the upper surface of the p-type ohmic electrode 621b and the insulating film 4d around the ridge portion Ri.

  The infrared semiconductor laser element 3 includes an insulating film 4d in the same manner as the red semiconductor laser element 2 described above. A p-type ohmic electrode 621 c is formed on the upper surface of the ridge portion Ri of the infrared semiconductor laser element 3.

  A solder film H is formed at the junction of the blue-violet semiconductor laser device 1, the red semiconductor laser device 2, and the infrared semiconductor laser device 3 on the submount 505S (fusion layer 505H). Thereby, the n electrodes of the respective semiconductor laser elements are electrically connected to each other.

  Here, on the fusion layer 505H, the blue-violet semiconductor laser element 1, the infrared semiconductor laser element 3, and the red semiconductor laser element 2 are arranged in order in the Y direction on the laser end face 505X side.

In the present reference, the distance between the blue-violet emission point 11 and the infrared emission point 31 in the Y direction is adjusted, for example, about 110 [mu] m. Further, the interval between the red light emitting point 21 and the infrared light emitting point 31 in the Y direction is adjusted to, for example, about 400 μm.

  Here, as shown in FIG. 22B, in the Y direction, the blue-violet emission point 11 is formed so as to be located closer to the infrared emission point 31 than the center of the blue-violet semiconductor laser device 1. In addition, in the Y direction, the infrared emission point 31 is formed so as to be located closer to the blue-violet emission point 11 than the center of the infrared semiconductor laser element 3. Further, in the Y direction, the red light emitting point 21 is formed so as to be positioned closer to the infrared light emitting point 31 than the center of the red semiconductor laser element 2.

  By forming the blue-violet emission point 11 and the infrared emission point 31 in this way, the interval between the blue-violet emission point 11 and the infrared emission point 31 can be reduced.

In the present reference, the cavity length of the blue-violet semiconductor laser element 1 extending in the X direction is, for example, about 800 [mu] m. The resonator length of the red semiconductor laser element 2 and the infrared semiconductor laser element 3 extending in the X direction is, for example, about 1200 μm.

(B) Mounting State of Semiconductor Laser Device to Laser Package FIG. 23 shows a state in which the semiconductor laser device 1000E of FIG. 22 is mounted in the substantially circular can package 500 for laser of FIG. 3 and the lid 504 is removed. It is a typical front view. 23, the X direction, the Y direction, and the Z direction are defined as in FIG.

  As shown in FIG. 23, the submount 505S of the semiconductor laser apparatus 1000D is provided on the support member 505 of the substantially circular can package 500 for laser.

  Here, the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 are joined to the fusion layer 505H on the submount 505S by the blue-violet light emitting point 11 of the blue-violet semiconductor laser element 1. The lid 504 is positioned so as to be positioned at the center of the take-out window 504a (see FIG. 3).

  Further, the semiconductor laser device 1000E is disposed on the support member 505 so that the laser end surface 505X of the submount 505S is positioned on the light emitting surface side of the substantially circular can package 500 for laser (on the extraction window 504a side of the lid 504). Is done.

  The power feed pin 501a is connected to one end of the p-side pad electrode 22 of the semiconductor laser apparatus 1000E through a wire W1. The power feed pin 501b is connected to one end of the p-side pad electrode 12 of the semiconductor laser apparatus 1000E through a wire W2. The power feed pin 501c is connected to one end of the p-side pad electrode 33 of the semiconductor laser apparatus 1000E through a wire W3.

  The support member 505 is electrically connected to the n electrodes 15, 23, and 33 through the submount 505 </ b> S, the fusion layer 505 </ b> H, and the solder film H. Thus, the power feed pin 502 is electrically connected to the n electrodes 15, 23, 33 of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3. That is, the cathode common connection of the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 is realized.

  The red semiconductor laser element 2 can be driven by applying a voltage between the power supply pin 501 a and the power supply pin 502. The blue-violet semiconductor laser device 1 can be driven by applying a voltage between the power feed pin 501b and the power feed pin 502. The infrared semiconductor laser element 3 can be driven by applying a voltage between the power feed pin 501c and the power feed pin 502. Thus, the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 can be driven independently.

(C) a semiconductor even effect the present reference embodiment in the mounted state of the laser package of the laser device, mounted to the semiconductor laser device substantially round-shaped can package for laser 500 1000E is the blue-violet semiconductor laser element 1 Blue The purple light emission point 11 is performed so as to be located at the center of the extraction window 504a (see FIG. 3) of the lid 504. Thereby, the same effect as the first reference embodiment can be obtained.

The semiconductor laser device 1000E according to this reference embodiment can be used for the optical pickup device 900 in FIG. 12. Thus, it is possible to obtain the same effect as in the first reference embodiment.

In this reference embodiment, the semiconductor laser apparatus 1000E has a junction-up structure on the submount 505S. However, in the semiconductor laser device 1000E, the blue-violet semiconductor laser element 1, the red semiconductor laser element 2, and the infrared semiconductor laser element 3 have substantially the same thickness, and the blue-violet semiconductor laser element 1 and red are mounted on the submount 505S. The semiconductor laser device 2 and the infrared semiconductor laser device 3 may have a junction down structure in which the p-side pad electrodes 12, 22, and 32 are joined.

(6) Correspondence with Claims In the first to third, fifth and fifth embodiments and the fourth embodiment, the X direction corresponds to the first direction, and the laser has a wavelength of about 405 nm. The light and blue-violet laser light correspond to light of the first wavelength, the blue-violet emission point 11 corresponds to the first emission point, the blue-violet semiconductor laser element 1 corresponds to the first semiconductor laser element, and the wavelength The laser light of about 650 nm and the red laser light correspond to light of the second wavelength, the red light emitting point 21 corresponds to the second light emitting point, the red semiconductor laser element 2 corresponds to the second semiconductor laser element, Laser light having a wavelength of about 780 nm and infrared laser light correspond to light of the third wavelength, the infrared emission point 31 corresponds to the third emission point, and the infrared semiconductor laser element 3 is the third semiconductor laser element. Corresponding to the first plane perpendicular to the first direction. To.

  The Y direction corresponds to the second direction, the n-GaN substrate 1s corresponds to the first substrate, the semiconductor layer 1t corresponds to the first semiconductor layer, and the p-side pad electrode 12 corresponds to the first electrode. The semiconductor layer 2t corresponds to the second semiconductor layer, the p-side pad electrode 22 corresponds to the second electrode, the semiconductor layer 3t corresponds to the third semiconductor layer, and the p-side pad electrode 32 corresponds to It corresponds to the third electrode, and the insulating film 4a corresponds to the insulating layer.

  Further, the optical disc DI corresponds to an optical recording medium, the photodetector 909a corresponds to a first photodetector, the photodetector 909b corresponds to a second photodetector, a polarization BS 902, a collimator lens 903, a beam The expander 904, the λ / 4 plate 905, the objective lens 906, the cylinder lens 907, and the optical axis correction element 908 correspond to an optical system, and the optical axis correction element 908 corresponds to a diffraction grating.

In the first to third and fifth reference embodiments and the fourth embodiment, the example in which the semiconductor laser device is mounted on the substantially circular can package for laser is shown. However, the present invention is not limited to this, and the frame The present invention is also applicable when the semiconductor laser device is mounted on another package such as a laser package of a type.

  The semiconductor laser device and the optical pickup device according to the present invention can be effectively used for an optical recording medium driving device capable of recording and reproducing a plurality of types of optical recording media, and the manufacture thereof.

It is a schematic diagram for demonstrating the structure of the semiconductor laser apparatus which concerns on a 1st reference form. FIG. 2 is a schematic diagram of a bonding surface between a blue-violet semiconductor laser element, a red semiconductor laser element, and an infrared semiconductor laser element in the semiconductor laser device of FIG. FIG. 2 is an external perspective view of a substantially circular can package for a laser on which the semiconductor laser device of FIG. 1 is mounted. It is a typical front view which shows the state which removed the cover body of the substantially circular can package for lasers of FIG. It is a typical top view which shows the state which removed the cover body of the semiconductor laser apparatus. It is typical process sectional drawing which shows an example of the manufacturing method of the semiconductor laser apparatus which concerns on a 1st reference form. It is typical process sectional drawing which shows an example of the manufacturing method of the semiconductor laser apparatus which concerns on a 1st reference form. It is typical process sectional drawing which shows an example of the manufacturing method of the semiconductor laser apparatus which concerns on a 1st reference form. It is typical sectional drawing for demonstrating the detail of the structure of a blue-violet semiconductor laser element. It is a typical sectional view for explaining details of a structure of a red semiconductor laser device of a monolithic red / infrared semiconductor laser device. It is a typical sectional view for explaining details of a structure of an infrared semiconductor laser device of a monolithic red / infrared semiconductor laser device. It is a figure which shows the structure of the optical pick-up apparatus which concerns on this reference form. It is a schematic diagram for demonstrating the structure of the semiconductor laser apparatus concerning a 2nd reference form. FIG. 14 is a schematic front view showing a state in which the semiconductor laser device of FIG. 13 is mounted in the laser substantially circular can package of FIG. 3 and a lid is removed. It is a schematic diagram for demonstrating the structure of the semiconductor laser apparatus which concerns on a 3rd reference form. FIG. 16 is a schematic diagram of a bonding surface between a blue-violet semiconductor laser element, a red semiconductor laser element, and an infrared semiconductor laser element in the semiconductor laser device of FIG. 15. FIG. 16 is a schematic front view showing a state in which the semiconductor laser device of FIG. 15 is mounted in the substantially circular can package for laser of FIG. 3 and a lid is removed. FIG. 16 is a schematic top view showing a state in which the semiconductor laser device of FIG. 15 is mounted in the substantially circular can package for laser of FIG. 3 and a lid is removed. It is a schematic diagram for demonstrating the structure of the semiconductor laser apparatus which concerns on 4th Embodiment. FIG. 20 is a schematic diagram of a junction between a blue-violet semiconductor laser element and a monolithic red / infrared semiconductor laser element and a submount in the semiconductor laser device of FIG. 19. FIG. 20 is a schematic front view showing a state in which the semiconductor laser device of FIG. 19 is mounted in the substantially circular can package for laser of FIG. 3 and a lid is removed. It is a schematic diagram for demonstrating the structure of the semiconductor laser apparatus which concerns on a 5th reference form. FIG. 23 is a schematic front view showing a state where the semiconductor laser device of FIG. 22 is mounted in the substantially circular can package for laser of FIG. 3 and a lid is removed.

DESCRIPTION OF SYMBOLS 1 Blue-violet semiconductor laser device 1s n-GaN substrate 1t Semiconductor layer 2 Red semiconductor laser device 2t Semiconductor layer 3 Infrared semiconductor laser device 3t Semiconductor layer 4a Insulating film 11 Blue-violet light emitting point 12 P side pad electrode 21 Red light emitting point 22 p Side pad electrode 31 Infrared emission point 32 P side pad electrode 505S, 505Z Submount 900 Optical pickup device 909a, 909b Photodetector 902 Polarization BS
903 Collimator lens 904 Beam expander 905 λ / 4 plate 906 Objective lens 907 Cylinder lens 908 Optical axis correction element 1000A to 1000E Semiconductor laser device BR connecting portion DI optical disc

Claims (10)

Formed on the first semiconductor layer, a first light emitting point that emits light of a first wavelength in a direction substantially parallel to the first direction, a first semiconductor layer having the first light emitting point, and A first semiconductor laser element having a first electrode to be
Formed on the second semiconductor layer, a second light emitting point that emits light of the second wavelength in a direction substantially parallel to the first direction, a second semiconductor layer having the second light emitting point, and A second semiconductor laser element having a second electrode to be operated;
Formed on the third semiconductor layer, a third light emitting point that emits light of a third wavelength in a direction substantially parallel to the first direction, a third semiconductor layer that includes the third light emitting point, and A third semiconductor laser element having a third electrode to be
A submount on which the first, second, and third semiconductor laser elements are disposed on one surface;
The first, second and third semiconductor laser elements are arranged in a second direction intersecting the first direction, the first semiconductor laser element, the third semiconductor laser element, and the second semiconductor. Arranged in the order of the laser elements,
On one side in the second direction on the first surface of the submount, the first pad electrode is formed,
On the other side in the second direction on the one surface of the submount, the second pad electrodes are formed,
A substantially central portion in the second direction on the one surface of the submount, the third pad electrode is formed,
The first pad electrode, the second pad electrode, and the third pad electrode are electrically separated from each other by being spaced apart from each other on the one surface of the submount,
The first electrode of the first semiconductor laser element is bonded onto the first pad electrode,
The second electrode of the second semiconductor laser element is bonded onto the second pad electrode,
The third electrode of the third semiconductor laser element is bonded onto the third pad electrode,
A wire is bonded to the first pad electrode on one side of the first semiconductor laser element in the second direction;
A semiconductor laser device, wherein a wire is bonded to the second pad electrode on the other side of the second semiconductor laser element in the second direction. The second wavelength is different from a natural number multiple of the first wavelength,
The semiconductor laser device according to claim 1, wherein the third wavelength is substantially a natural number times the first wavelength. Formed on the first semiconductor layer, a first light emitting point that emits light of a first wavelength in a direction substantially parallel to the first direction, a first semiconductor layer having the first light emitting point, and A first semiconductor laser element having a first electrode to be
A second light emitting point that emits light having a second wavelength different from a natural number multiple of the first wavelength in a direction substantially parallel to the first direction; and a second semiconductor layer having the second light emitting point And a second semiconductor laser element having a second electrode formed on the second semiconductor layer,
A third light emitting point that emits light having a third wavelength that is substantially a natural number multiple of the first wavelength in a direction substantially parallel to the first direction; and a third semiconductor layer including the third light emitting point And a third semiconductor laser element having a third electrode formed on the third semiconductor layer,
A submount on which the first, second, and third semiconductor laser elements are disposed on one surface;
The first, second, and third semiconductor laser elements are arranged in a second direction that intersects the first direction with the first semiconductor laser element, the third semiconductor laser element, and the second semiconductor. Arranged in the order of the laser elements,
On one side in the second direction on the first surface of the submount, the first pad electrode is formed,
On the other side in the second direction on the one surface of the submount, the second pad electrodes are formed,
A substantially central portion in the second direction on the one surface of the submount, the third pad electrode is formed,
The first pad electrode, the second pad electrode, and the third pad electrode are electrically separated from each other by being spaced apart from each other on the one surface of the submount,
The first electrode of the first semiconductor laser element is bonded onto the first pad electrode,
The second electrode of the second semiconductor laser element is bonded onto the second pad electrode,
3. The semiconductor laser device according to claim 1, wherein the third electrode of the third semiconductor laser element is bonded onto the third pad electrode.   The wire is bonded to the exposed portion of the third pad electrode on the side opposite to the emission surface of the third semiconductor laser element in the first direction. The semiconductor laser device described in 1.   The third pad electrode extends in the first direction at a substantially central portion of the one surface of the submount in the second direction, and on the one surface of the submount in the first direction. 5. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is formed to extend in the second direction on the side opposite to the emission surface. The first semiconductor laser element is formed on a first substrate,
The second semiconductor laser element and the third semiconductor laser element are formed on a common second substrate,
The semiconductor laser device according to claim 1, wherein the first substrate and the second substrate are made of different materials.   7. The semiconductor according to claim 6, wherein the first, second, and third semiconductor laser elements are joined to the first, second, and third pad electrodes, respectively, in a junction down structure. Laser device. An optical pickup device for irradiating light to an optical recording medium and detecting light returning from the optical recording medium,
An optical pickup device comprising the semiconductor laser device according to claim 1. First and second photodetectors;
The light of the first, second, or third wavelength that guides the light of the first, second, or third wavelength emitted from the semiconductor laser device to the optical recording medium and returns from the optical recording medium. The optical pickup device according to claim 8, further comprising an optical system that guides the light to the first or second photodetector. The optical system is
Directing light of the first and third wavelengths to the first and second photodetectors, respectively, and directing light of the second wavelength to one of the first and second photodetectors; The optical pickup device according to claim 9, further comprising a diffraction grating that transmits light of the first, second, and third wavelengths.