JPH01164084A - Semiconductor laser device - Google Patents

Abstract

PURPOSE:To enhance the dispersion performance of heat generated by a semiconductor laser element, to reduce an irregularity in a light-emitting characteristic of individual stripes, to relax local concentration of a stress due to a heat cycle and to prevent a wiring body from being disconnected by a method wherein an electrical insulator with good heat conductivity is filled into a gap between the semiconductor laser element and a support body. CONSTITUTION:Laser electrodes 8 of a semiconductor laser element 1 having two or more stripes 2a-2d arranged in one row at prescribed intervals are arranged to be face to face with metal wiring bodies 7 formed on a support body 3; both are thermally bonded via a conductive adhesive material 6 such as a solder or the like; electrical conduction is produced; both are fixed physically; a resin 9 is laid between the semiconductor laser element 1 and the support body 3. The support body 3 is composed of a ceramic, silicon carbide or the like whose thermal conductivity is good; the metal wiring body 7 is composed of gold, copper or the like. After the semiconductor laser 1 and the support body 3 have been fixed, the resin 9, e.g., a thermoset resin of good thermal conductivity, is injected by using an injection needle; it is filled and hardened.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor laser device having a plurality of active layers (strives) within the same chip.

[Prior Art] In a semiconductor laser device including a monolithic semiconductor laser element (chip) having a plurality of stripes, die bonding and electrical wiring are generally as described in the appendix below. That is, a pattern of gold or copper wiring bodies is formed on the chip die bonding surface of the support using ordinary photolithography technology. The pattern of this wiring body has dimensions corresponding to the arrangement pitch of the semiconductor laser elements, and is generally a parallel pattern. This metal wiring body and the electrodes of the semiconductor laser chip are
They are connected by thermocompression bonding via a conductive adhesive such as half-10.

[Problems to be Solved by the Invention] In the conventional semiconductor laser device described above, the vapor-deposited electrodes provided separately on the semiconductor laser element and the metal wiring body provided on the support are bonded using solder or the like. It is bonded by thermocompression using a conductive adhesive, and the static strength of the connection is greater than that of wire bonding. However, because the connection structure is dimensionally tight, if the coefficients of thermal expansion of the element chip and the support are different, reliability problems such as disconnection of the metal wiring body may occur during cooling and heating cycles, and the element There were drawbacks such as insufficient heat dissipation from the chip and variations in the characteristics of each stripe.

[Means for Solving the Problems] In the semiconductor laser device of the present invention, the gap between the semiconductor laser element and the support is filled with an electrical insulator (for example, resin) having good thermal conductivity.

[Function] Heat generated from the semiconductor laser element escapes through the electrical insulator with good thermal conductivity provided in the gap between the semiconductor laser element and the support, improving heat dissipation. Variations in the light emitting characteristics of each stripe are reduced,
Further, by relaxing local stress concentration caused by thermal cycles, it is possible to prevent disconnection of the metal wiring body.

[Embodiments] Next, embodiments of the present invention will be described with reference to the drawings.

Embodiment 1 FIG. 1 is a front view of a first embodiment of the semiconductor laser device of the present invention, and FIG. 2 is a perspective view of the embodiment shown in FIG.

In this embodiment, a laser electrode 8 (provided separately corresponding to each stripe) of a semiconductor laser device 1 having a plurality of stripes 2a to 2d arranged in a line at predetermined intervals is attached to a support 3. Metal wiring body 7 provided above
(7, to 7d) and thermocompression-bond them through a conductive adhesive 6 such as solder to establish electrical continuity.
In addition to physically fixing the semiconductor laser element 1 and the support 3, a resin 9 is interposed between the semiconductor laser element 1 and the support 3.

The support body 3 is made of ceramic, silicon carbide, etc. with good thermal conductivity, and the metal wiring body 7 (7a to 7d) is made of gold, copper, etc. Further, the resin 9 is provided by, for example, injecting a thermosetting resin with good thermal conductivity with a syringe needle, filling it, and curing it after fixing the semiconductor laser element 1 and the support body 3. In addition, what is the thickness of the laser electrode 8? μ
The thickness of the metal wiring body 7 is approximately 2 μm.

Embodiment 2 FIG. 3 is a front view of a second embodiment of the semiconductor laser device of the present invention.

In this embodiment, the support 3 in the first embodiment is replaced with a structure in which an electrical insulator 11 with good thermal conductivity is bonded to a metal block (or thick plate 10). If the insulator is expensive, the cost can be reduced by making most of it the metal block 10 as in this embodiment.

[Effects of the Invention] As explained above, the present invention provides an electrical insulator with good thermal conductivity between the chip and the support, thereby reducing repetitive stress due to temperature changes, improving reliability, and extending the life of the element. This also has the effect of reducing variations in the light emitting characteristics of each stripe.

[Brief explanation of the drawing]

FIG. 1 is a front view of a first embodiment of a semiconductor laser device of the present invention, FIG. 2 is a perspective view of the first embodiment, and FIG. 3 is a front view of a second embodiment of a semiconductor laser device of the present invention. It is a front view. DESCRIPTION OF SYMBOLS 1... Semiconductor laser element, 2 (2a-2d)... Stripe, 3... Support body, 6... Conductive adhesive material, 7 (7a-7.)... Metal wiring body, 8 ...Laser electrode, 9...Resin, io-...Metal block, 11...Insulator.

Claims (1)

[Scope of Claims] 1. A monolithic semiconductor laser element provided with a plurality of laser light emitting regions and in which a laser electrode is individually arranged corresponding to each of the plurality of laser light emitting regions; and the monolithic semiconductor laser. A wiring body for supplying current to the element is formed on the main surface and has a support body for supporting the monolithic semiconductor laser element, and a laser electrode of the monolithic semiconductor laser element and the wiring opposite thereto. A semiconductor laser device that is electrically connected to a support body, and has an electrical insulator with good thermal conductivity interposed between the monolithic semiconductor laser element and the support body. 2. The support is an electrical insulator with good thermal conductivity at least in the vicinity of the main surface where the wiring is formed, and the heat conduction between the monolithic semiconductor laser element and the support is 2. The semiconductor laser device according to claim 1, wherein the electrical insulator with good properties is made of resin.