JP3234614B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device and a method of manufacturing the same.

[0002]

2. Description of the Related Art A conventional semiconductor device of this type is shown in FIG. The semiconductor chip 1 is bonded on the die pad 12 via a bonding material 14. A plurality of bonding pads 10 are formed on the semiconductor chip 1, and are electrically connected to corresponding leads 13 via thin metal wires 11. Semiconductor chip 1, die pad 12, thin metal wire 1
1 and a part of the lead 13 are sealed by a package body 6 made of a mold resin.

[0003]

However, in order to hold the leads 13 by the package body 6, it is necessary to set the embedded length L1 of the leads 13 to an appropriate value or more. The bonding pad 1 of the semiconductor chip 1
In order to form the fine metal wire 11 connecting the lead 0 and the lead 13 into a reasonable and reasonable shape, the die pad 12 and the lead 13
It is necessary to provide an appropriate distance L2 between the two. For this reason, there is a problem that the entire package is larger than the semiconductor chip 1. In addition, in order to avoid contact between the thin metal wires 11 and the ends of the semiconductor chip 1, the respective bonding pads 10 of the semiconductor chip 1 are arranged at the peripheral edge of the semiconductor chip 1 irrespective of the internal circuit configuration of the semiconductor chip 1. Therefore, there is also a problem that the electrical characteristics of the semiconductor chip 1 may not be sufficiently brought out.

The present invention has been made to solve such a problem, and an object of the present invention is to provide a semiconductor device which is small in size and can sufficiently bring out the electrical characteristics of a semiconductor chip. Another object of the present invention is to provide a method for manufacturing a semiconductor device capable of obtaining such a semiconductor device.

[0005]

A semiconductor device according to the present invention has a semiconductor chip on which a plurality of first bump electrodes are formed, an insulating substrate for mounting the semiconductor chip, and a first surface of the insulating substrate. And a plurality of contacts formed on the second bump surface of the corresponding semiconductor chip and respectively connected to the first bump electrodes of the corresponding semiconductor chip, and a plurality of contacts formed on the second surface of the insulating substrate and arranged at positions different from the respective corresponding contacts. And a second bump electrode formed on the first surface of the insulating substrate and
One end is electrically connected to the corresponding contact and the other is
The end is the same as the corresponding second bump electrode across the insulating substrate
Penetrate through the insulating substrate and the multiple connection members
Provided in contact with the corresponding second bump electrodes.
Multiple through-holes electrically connecting the other end of the connecting member
And a package body for resin-sealing the semiconductor chip and the first surface of the insulating substrate. Further, in the method of manufacturing a semiconductor device according to the present invention, a plurality of contacts are formed on the first surface of the insulating substrate corresponding to the plurality of first bump electrodes of the semiconductor chip, respectively. A plurality of second bump electrodes arranged at different positions are formed on the second surface of the insulating substrate, and one end of each of the second bump electrodes corresponds to the second bump electrode.
The other end is electrically connected to the contact and the other end is
So that it is located at the same position as the corresponding second bump electrode
Forming a plurality of connecting members on the first surface of the insulating substrate,
Connect the corresponding second bump electrode and the other end of the connection member
Electrically connected by through holes passing through the insulating substrate
Subsequently, the semiconductor chip and the insulating substrate are aligned with each other such that the first bump electrodes of the semiconductor chip contact the corresponding contacts of the insulating substrate, and the first bump electrodes of the semiconductor chip and the contacts of the insulating substrate are connected. This is a method in which the contact portions are heated and diffusion-bonded to each other, and the semiconductor chip and the first surface of the insulating substrate are sealed with resin.

[0006]

According to the present invention, a plurality of contacts of an insulating substrate are directly joined to a plurality of first bump electrodes of a semiconductor chip, and the second bump electrodes of the insulating substrate serve as mounting electrodes of the semiconductor device. .

[0007]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention. A plurality of first bump electrodes 22 are formed on a first surface 21a of the semiconductor chip 21. These bump electrodes 22 are arranged at appropriate positions in accordance with the configuration of the internal circuit of the semiconductor chip 21.
Irrespective of the peripheral portion and the central portion of the surface 21a. On the other hand, the first insulating substrate 23 made of ceramic
A plurality of contacts 24 are formed on the surface 23a of the semiconductor chip 21 at positions corresponding to the first bump electrodes 22 of the semiconductor chip 21, respectively. The first bump electrodes 22 and the insulating substrate 23 of the semiconductor chip 21 corresponding to each other are formed. The contact 24 is joined and electrically connected. Further, a plurality of second bump electrodes 26 are formed on the second surface 23b of the insulating substrate 23 at positions corresponding to the contacts 24, respectively. The corresponding contact 24 and the second bump electrode 26 are electrically connected by a through hole 25 penetrating the insulating substrate 23, and the second bump electrode 26 is used for mounting the semiconductor device. It becomes an electrode.

The semiconductor chip 21 and the first surface 23a of the insulating substrate 23 are made of a molding resin 27 made of a molding resin.
Is sealed. The semiconductor chip 21 is protected by the package body 27 and the semiconductor chip 21
The joint between the first bump electrode 22 and the contact 24 of the insulating substrate 23 is protected. The first bump electrodes 22 of the semiconductor chip 21 are formed of, for example, tin, and the contacts 24 provided on the insulating substrate 23 are formed of, for example, solder.

In this semiconductor device, the first bump electrode 22 of the semiconductor chip 21 is connected to the contact 24 of the insulating substrate 23.
7 are directly bonded, and the second bump electrode 26 provided on the insulating substrate 23 becomes a mounting electrode of the semiconductor device.
Lead 1 used in the conventional semiconductor device shown in FIG.
3 and the thin metal wire 11 become unnecessary. As a result, miniaturization of the semiconductor device has been achieved. In addition, the first bump electrode 22 of the semiconductor chip 21 can be freely provided at a convenient position in the first surface 21a according to the configuration of the internal circuit of the semiconductor chip 21.
It is possible to provide the internal wiring of the semiconductor chip 21 connected to the shortest distance. As a result, the semiconductor chip 21
The speed of the signal processing is improved. Further, since the resistance of the internal wiring is reduced, the linear characteristics of the semiconductor chip 21 are improved.

[0010] Such a semiconductor device can be manufactured as follows. First, a contact 24 is formed on the insulating substrate 23 in correspondence with the first bump electrode 22 of the semiconductor chip 21.
A through hole 25 and a second bump electrode 26 are formed. Next, as shown in FIG. 2, the insulating substrate 23 is placed such that the first surface 23a on which the contact 24 is formed faces upward.
Is placed on the heating jig 30. The semiconductor chip 21 is placed on the insulating substrate 2 such that the first bump electrode 22 of the corresponding semiconductor chip 21 contacts the contact 24 of the insulating substrate 23.
Align to 3. In this state, the temperature of the heating jig 30 is raised, so that the first bump electrode 2 of the semiconductor chip 21 is formed.
The joint between the substrate 2 and the contact 24 of the insulating substrate 23 is heated and these are diffused and joined. The semiconductor chip 21 mounted on the insulating substrate 23 in this manner is combined with the insulating substrate 23 in FIG.
The cavity half 28a of the upper mold 28 as shown in FIG.
The lower mold 29 is housed in a cavity formed by the cavity half 29a and the molds 28 and 29 are clamped. In this state, the mold resin in a molten state is injected into the cavity through the gate 28b formed in the upper mold 28, and then the resin is cooled, whereby the semiconductor device shown in FIG. 1 is manufactured.

In the above-described first embodiment, the insulating substrate 23 is formed of ceramic. However, the present invention is not limited to this, and it is sufficient that the insulating substrate 23 has electrical insulation and appropriate mechanical strength. For example, as in the second embodiment shown in FIG. 4, a semiconductor chip 31 is mounted on an insulating substrate 33 made of polyimide, and the semiconductor chip 31 and the first surface 3 of the insulating substrate 33 are mounted.
3a may be resin-sealed with the package body 37. Also, as in the third embodiment shown in FIG. 5, a semiconductor chip 41 is mounted on an insulating substrate 43 made of glass epoxy, and the semiconductor chip 41 and the first surface 43a of the insulating substrate 43 are mounted.
Can be resin-sealed by the package body 47.

FIG. 6 shows a cross section of a semiconductor device according to a fourth embodiment. On the second surface 53b of the insulating substrate 53, a plurality of second bump electrodes 56 are formed at positions suitable for mounting the semiconductor device. These second bump electrodes 56 are respectively connected to the insulating substrate 5 through the through holes 55.
3 is electrically connected to one end of a connection member 58 formed on the first surface 53a. The connection member 58 is formed from a metal foil, and a contact 54 is formed on the other end of the connection member 58. These contacts 54 are formed at positions corresponding to the first bump electrodes 52 of the semiconductor chip 51, and each contact 54 is joined to the corresponding bump electrode 52 of the semiconductor chip 51. Then, the semiconductor chip 51 and the first surface 53 a of the insulating substrate 53 are resin-sealed by the package body 57. In the fourth embodiment, the second bump electrode 56 serving as an electrode for mounting the semiconductor device can be freely arranged at a position different from that of the first bump electrode 52 of the semiconductor chip 51. There is an advantage that the degree of freedom in mounting is increased.

[0013]

As described above, the semiconductor device according to the present invention has a semiconductor chip on which a plurality of first bump electrodes are formed, an insulating substrate for mounting the semiconductor chip, and a first insulating substrate. a plurality of contacts which are joined to the first bump electrodes of the corresponding semiconductor chip is formed into the surface of, it is disposed at a position different from the corresponding contact is formed in a second surface of the insulating substrate And a plurality of second bump electrodes formed on the first surface of the insulating substrate.
And one end is electrically connected to the corresponding contact.
And the other end corresponds to the second bump electrode with the insulating substrate interposed therebetween.
A plurality of connecting members arranged at the same position as the poles and an insulating substrate
And corresponding second bumps provided through the
A plurality of vias for electrically connecting the electrode and the other end of the connection member.
Since the semiconductor device is provided with a package body for sealing the semiconductor chip and the first surface of the insulating substrate with a resin, the miniaturization can be achieved and the electrical characteristics of the semiconductor chip can be sufficiently brought out. Further, in the method of manufacturing a semiconductor device according to the present invention, a plurality of contacts are formed on the first surface of the insulating substrate corresponding to the plurality of first bump electrodes of the semiconductor chip, respectively. A plurality of second bump electrodes arranged at different positions are formed on the second surface of the insulating substrate, and one end of each is electrically connected to a corresponding contact.
A second bump connected to the other end with the insulating substrate interposed therebetween.
Of the insulating substrate so as to be located at the same position as the
A plurality of connecting members are formed on the surface, and second bars corresponding to each other are formed.
Pump electrode and the other end of the connection member penetrate the insulating substrate
The semiconductor chip and the insulating substrate are aligned so that the first bump electrodes of the semiconductor chip are in contact with the corresponding contacts of the insulating substrate, and the first bump electrodes of the semiconductor chip are electrically connected to each other. Since the contact portion between the semiconductor chip and the contact of the insulating substrate is heated and diffusion-bonded, and the semiconductor chip and the first surface of the insulating substrate are resin-sealed,
It is possible to manufacture a semiconductor device which is small and can sufficiently bring out the electrical characteristics of a semiconductor chip.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing one step of a method of manufacturing the semiconductor device of FIG. 1;

FIG. 3 is a sectional view showing another step of a method for manufacturing the semiconductor device of FIG. 1;

FIG. 4 is a sectional view showing a semiconductor device according to a second embodiment of the present invention.

FIG. 5 is a sectional view showing a semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a sectional view showing a semiconductor device according to a fourth embodiment of the present invention.

FIG. 7 is a sectional view showing a conventional semiconductor device.

[Explanation of symbols]

 Reference Signs List 21 semiconductor chip 22 first bump electrode 23 insulating substrate 24 contact 25 through hole 26 second bump electrode 27 package body 31 semiconductor chip 33 insulating substrate 37 package body 41 semiconductor chip 43 insulating substrate 47 package body 51 semiconductor chip 52 first Bump electrode 53 insulating substrate 54 contact point 55 through hole 56 second bump electrode 57 package body 58 connecting member

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/60 311 H01L 23/12

Claims (2)

(57) [Claims] A semiconductor chip on which a plurality of first bump electrodes are formed; an insulating substrate for mounting the semiconductor chip; and a semiconductor formed on a first surface of the insulating substrate and corresponding to the semiconductor chip. A plurality of contacts joined to the first bump electrodes of the chip; and a plurality of second contacts formed on the second surface of the insulating substrate and arranged at positions different from the corresponding contacts .
And a bump electrode formed on the first surface of the insulating substrate and
One end is electrically connected to the corresponding contact and the other end is
Same as the corresponding second bump electrode with the insulating substrate interposed
A plurality of connection members arranged at positions, and provided through the insulating substrate and corresponding to the respective connection members.
The second bump electrode is electrically connected to the other end of the connection member.
A plurality of through-holes, and a package body for resin-sealing the semiconductor chip and the first surface of the insulating substrate. 2. A method according to claim 1, wherein a plurality of contacts are formed on the first surface of the insulating substrate in correspondence with the plurality of first bump electrodes of the semiconductor chip, and the plurality of contacts are arranged at positions different from the first bump electrodes. A second bump electrode is formed on the second surface of the insulating substrate, and one end is electrically connected to a corresponding contact and
The end is the same as the corresponding second bump electrode across the insulating substrate
A plurality of contacts on the first surface of the insulating substrate so that
Forming a connection member, and connecting the second bump electrode and the other end of the connection member corresponding to each other to each other.
Electricity is generated by through holes penetrating the insulating substrate, respectively.
The semiconductor chip and the insulating substrate are aligned so that the first bump electrodes of the semiconductor chip contact the corresponding contacts of the insulating substrate, respectively, and the contact between the first bump electrode of the semiconductor chip and the insulating substrate A semiconductor device and a first surface of an insulating substrate are resin-sealed by heating a contact portion of the semiconductor device with the semiconductor chip and diffusion bonding them.