JP2011014346A - Method and device for manufacturing light-emitting panel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce film-forming defects of a carrier transport layer.SOLUTION: A mask M has an opening 31 of which a coating region R1 is exposed, a frame 32 to cover a non-coating region R2, and a slope 33 which inclines on the opening 31 side in the frame 32 and toward the lower part on the opening 31 side from the upper part of the frame 32. The frame 32 of the mask M is arranged superposed in the non-coating region R2 of a substrate 10, and a liquid body L is coated by a nozzle print method, in which a nozzle N is moved relatively, from the coating region R1 in the opening 31 of the mask M toward the slope 33 of the frame 32 and from the slope 33 of the frame 32 toward the coating region R1 in the opening 31. Thereby, generation of meniscus of the liquid body L at the boundary of the coating region R1 and the non-coating region R2 is suppressed, and defects of film-forming of the carrier transport layer are reduced.

Description

  The present invention relates to a light emitting panel manufacturing method and a light emitting panel manufacturing apparatus.

Conventionally, in the manufacturing process of an EL element used for an EL (Electro Luminescence) panel, as a step of forming a carrier transport layer, a partition between barrier ribs formed so as to surround a pixel electrode (anode) provided on a glass substrate. A nozzle printing technique is known in which a liquid EL material liquid is poured into a groove through a nozzle and applied. An EL element is manufactured by providing a counter electrode (cathode) on a carrier transport layer formed by drying the applied EL material liquid and forming a film, and a coating area where the EL material is applied becomes a light emitting area of the EL panel. .
In this EL panel, around the light emitting region on the glass substrate, an area where various wirings are provided and a region where a sealing substrate covering the upper surface of the glass substrate is disposed is not coated with an EL material liquid. There is a coating area.
A technique is known in which the EL material liquid is covered with a mask so as not to adhere to the non-application area, and the EL material liquid is applied through the mask (see, for example, Patent Document 1).

JP 2001-297876 A

However, in the case of the above-mentioned Patent Document 1, it is possible to selectively apply the EL material liquid L to the application region and form the carrier transport layer by arranging the mask Ma in the non-application region on the glass substrate 10a. However, as shown in FIG. 16 (a), the surface of the EL material liquid L applied to the application region and the side surface of the mask Ma between the application region and the non-application region The meniscus Lm of the EL material liquid L may be generated due to the tension.
If the meniscus Lm remains after the mask Ma is removed and dried, as shown in FIG. 16B, the meniscus Lm becomes a step projecting upward, resulting in poor film formation of the carrier transport layer. Will end up. And the sharp level | step difference by the meniscus Lm had the problem that the counter electrode formed on a carrier transport layer might be disconnected.

  Therefore, an object of the present invention is to reduce film formation defects in the carrier transport layer.

In order to solve the above problems, one aspect of the present invention provides:
A first region that is a central side of one surface of the substrate; and a second region that surrounds the first region, and the first region covers the first electrode and the first electrode. In the method for manufacturing a light-emitting panel in which a carrier transport layer and a second electrode covering the carrier transport layer are formed,
An inclined surface that includes an opening from which the first region is exposed and a frame that covers the second region with a lower surface, and is inclined from the upper surface of the frame toward the lower surface on the opening side of the frame. Arranging the frame portion of the mask to overlap the second region,
While moving the nozzle relative to the substrate on which the mask is disposed, the liquid material in which the material serving as the carrier transport layer is dissolved or dispersed in the solvent is poured out from the nozzle, and the liquid material, It is characterized by comprising a coating step of coating over the first region in the opening and the slope of the frame portion of the mask.
Preferably, in the coating step,
The liquid material is applied from the first region of the substrate to the slope of the frame portion of the mask while the nozzle is relatively moved in the positive direction of one direction, and then the nozzle is applied to the frame portion. At a corresponding position, the nozzle is relatively moved in a direction intersecting the one direction, and then the nozzle is relatively moved in a direction opposite to the one direction, from above the inclined surface of the frame portion of the mask. The liquid material is applied over the first region of the substrate.

Another aspect of the present invention is as follows:
A first region which is a central side of one surface of the substrate, and a second region which is the periphery of the first region, and the first region extends in one direction in the first region. An apparatus for manufacturing a light-emitting panel, comprising: a plurality of partition walls; a carrier transport layer that covers the first electrode with a recess extending in one direction between the partition walls; and a second electrode that covers the carrier transport layer. And
An inclined surface that includes an opening from which the first region is exposed and a frame that covers the second region with a lower surface, and is inclined from the upper surface of the frame toward the lower surface on the opening side of the frame. Having a mask;
While moving relative to the substrate on which the mask is arranged so that the inclined direction of the inclined surface coincides with the one direction and the frame portion overlaps the second region, Pouring out a liquid material in which the material is dissolved or dispersed in a solvent and applying the liquid material;
It is characterized by having.
Preferably, the inclined surface applies the liquid material from the first region of the substrate to the upper surface of the frame portion of the mask when the nozzle is relatively moved in the forward or reverse direction of one direction. When the liquid material is applied to the first region of the substrate from the upper surface of the frame portion of the mask, it is formed on the upper surface side of the edge of the frame portion through which the nozzle passes.
Preferably, the frame portion has a width corresponding to the width of the recess between the partition walls provided in the first region in the opening, corresponding to the direction in which the mask is disposed on the substrate. And a groove portion extending in the one direction and continuing to the concave portion is formed.
Preferably, an intersecting groove portion extending in a direction intersecting with the tilt direction is formed on the slope.

  According to the present invention, film formation defects in the carrier transport layer can be reduced.

It is a top view which shows the arrangement configuration of the pixel of an EL panel. It is a top view which shows schematic structure of EL panel. It is a circuit diagram showing a circuit corresponding to one pixel of an EL panel. It is the top view which showed 1 pixel of EL panel. It is arrow sectional drawing of the surface along the VV line of FIG. It is sectional drawing which shows the pixel electrode exposed between the banks of EL panel. It is a perspective view which shows the mask distribute | arranged on a board | substrate. It is a top view which shows the application | coating process which arrange | positions a mask on a board | substrate and applies a liquid body through a nozzle. It is explanatory drawing which shows an application | coating process with sectional drawing along the IX-IX line of FIG. It is sectional drawing which shows the carrier transport layer formed on the pixel electrode between the banks of EL panel. It is a top view which shows the application | coating process using the mask in which the groove part was formed. It is the top view (a) which shows the application | coating process using the mask in which the groove part and the crossing groove part were formed, and explanatory drawing (b) which shows an application | coating process with sectional drawing along the bb line. It is a front view which shows an example of the mobile telephone by which EL panel was applied to the display panel. They are the front side perspective view (a) which shows an example of the digital camera with which the EL panel was applied to the display panel, and a rear side perspective view (b). It is a perspective view which shows an example of the personal computer by which EL panel was applied to the display panel. It is explanatory drawing (a) which shows the application | coating process using the conventional mask, and explanatory drawing (b) which shows the meniscus which generate | occur | produced in the conventional application | coating process.

  Hereinafter, preferred embodiments for carrying out the present invention will be described with reference to the drawings. However, although various technically preferable limitations for implementing the present invention are given to the embodiments described below, the scope of the invention is not limited to the following embodiments and illustrated examples.

  FIG. 1 is a plan view illustrating an arrangement configuration of a plurality of pixels P in an EL panel 1 that is a light-emitting panel, and FIG. 2 is a plan view illustrating a schematic configuration of the EL panel 1.

As shown in FIGS. 1 and 2, in the EL panel 1, a plurality of pixels P that respectively emit R (red), G (green), and B (blue) are arranged in a matrix with a predetermined pattern. .
In the EL panel 1, a plurality of scanning lines 2 are arranged so as to be substantially parallel to each other along the row direction, and the plurality of signal lines 3 are arranged along the column direction so as to be substantially orthogonal to the scanning lines 2 in plan view. They are arranged so as to be substantially parallel to each other. A voltage supply line 4 is provided along the scanning line 2 between the adjacent scanning lines 2. A range surrounded by the two signal lines 3 adjacent to the scanning lines 2 and the voltage supply lines 4 corresponds to the pixel P. Here, a plurality of pixels P that emit R (red), a plurality of pixels P that emit G (green), and a plurality of pixels P that emit B (blue), respectively, along the arrangement direction of the signal lines 3. The pixels P are arranged side by side, and are arranged in the order of the pixels P that emit R (red), the pixels P that emit G (green), and the pixels P that emit B (blue) along the arrangement direction of the scanning lines 2. .
Further, the EL panel 1 is provided with a plurality of banks 13 which are partition walls extending in a direction along the signal line 3. Predetermined carrier transport layers (a hole injection layer 8b and a light emitting layer 8c described later) are provided in a range sandwiched between the banks 13 and become a light emitting region of the pixel P. That is, the bank 13 partitions the pixel P for each color of R (red), G (green), and B (blue). The carrier transport layer is a layer that transports holes or electrons when a voltage is applied.

  FIG. 3 is a circuit diagram showing a circuit corresponding to one pixel of the EL panel 1 operating in the active matrix driving method.

  As shown in FIG. 3, the EL panel 1 is provided with a scanning line 2, a signal line 3 intersecting with the scanning line 2, and a voltage supply line 4 along the scanning line 2. For each pixel P, a switch transistor 5 that is a thin film transistor, a drive transistor 6 that is a thin film transistor, a capacitor 7, and an EL element 8 are provided.

  In each pixel P, the gate of the switch transistor 5 is connected to the scanning line 2, one of the drain and source of the switch transistor 5 is connected to the signal line 3, and the other of the drain and source of the switch transistor 5 is It is connected to one electrode of the capacitor 7 and the gate of the driving transistor 6. One of the source and drain of the driving transistor 6 is connected to the voltage supply line 4, and the other of the source and drain of the driving transistor 6 is connected to the other electrode of the capacitor 7 and the anode of the EL element 8. Note that the cathodes of the EL elements 8 of all the pixels P are kept at a constant voltage Vcom (for example, grounded).

  Further, in the periphery of the EL panel 1, each scanning line 2 is connected to a scanning driver, each voltage supply line 4 is connected to a constant voltage source or a driver that outputs an appropriate voltage signal, and each signal line 3 is connected to a data driver. The EL panel 1 is driven by these drivers by an active matrix driving method. The voltage supply line 4 is supplied with predetermined power by a constant voltage source or a driver.

  Next, the circuit structure of the EL panel 1 and the pixel P will be described with reference to FIGS. Here, FIG. 4 is a plan view corresponding to one pixel P of the EL panel 1, and FIG. 5 is a cross-sectional view taken along the line VV of FIG. In FIG. 4, electrodes and wiring are mainly shown.

  As shown in FIG. 4, the switch transistor 5 and the drive transistor 6 are arranged along the signal line 3, the capacitor 7 is disposed in the vicinity of the switch transistor 5, and the EL element 8 is disposed in the vicinity of the drive transistor 6. ing. Further, a switch transistor 5, a drive transistor 6, a capacitor 7, and an EL element 8 are disposed between the scanning line 2 and the voltage supply line 4.

As shown in FIG. 5, the drive transistor 6 includes a gate electrode 6a, a semiconductor film 6b, a channel protective film 6d, impurity semiconductor films 6f and 6g, a drain electrode 6h, a source electrode 6i, and the like.
The switch transistor 5 is a thin film transistor similar to the drive transistor 6 described in detail below, and includes a gate electrode 5a, a semiconductor film, a channel protective film, an impurity semiconductor film, a drain electrode 5h, a source electrode 5i, and the like. Details are omitted here.
As shown in FIGS. 4 and 5, an interlayer insulating film 11 serving as a gate insulating film is formed on one surface of the substrate 10, and an interlayer insulating film 12 is formed on the interlayer insulating film 11. ing. The signal line 3 is formed between the interlayer insulating film 11 and the substrate 10, and the scanning line 2 and the voltage supply line 4 are formed between the interlayer insulating film 11 and the interlayer insulating film 12.

The gate electrode 6 a is formed between the substrate 10 and the interlayer insulating film 11. The gate electrode 6a is made of, for example, a Cr film, an Al film, a Cr / Al laminated film, an AlTi alloy film, or an AlTiNd alloy film. In addition, an insulating interlayer insulating film 11 is formed on the gate electrode 6a, and the gate electrode 6a is covered with the interlayer insulating film 11.
The interlayer insulating film 11 is made of, for example, silicon nitride or silicon oxide. An intrinsic semiconductor film 6b is formed on the interlayer insulating film 11 at a position corresponding to the gate electrode 6a, and the semiconductor film 6b is opposed to the gate electrode 6a with the interlayer insulating film 11 interposed therebetween.
The semiconductor film 6b is made of, for example, amorphous silicon or polycrystalline silicon, and a channel is formed in the semiconductor film 6b. An insulating channel protective film 6d is formed on the central portion of the semiconductor film 6b. The channel protective film 6d is made of, for example, silicon nitride or silicon oxide.
An impurity semiconductor film 6f is formed on one end portion of the semiconductor film 6b so as to partially overlap the channel protective film 6d, and the impurity semiconductor film 6g is formed on the other end portion of the semiconductor film 6b. Is partially overlapped with the channel protective film 6d. The impurity semiconductor films 6f and 6g are formed on both ends of the semiconductor film 6b so as to be separated from each other. The impurity semiconductor films 6f and 6g are n-type semiconductors, but are not limited thereto, and may be p-type semiconductors.
A drain electrode 6h is formed on the impurity semiconductor film 6f. A source electrode 6i is formed on the impurity semiconductor film 6g. The drain electrode 6h and the source electrode 6i are made of, for example, a Cr film, an Al film, a Cr / Al laminated film, an AlTi alloy film, or an AlTiNd alloy film.
An insulating interlayer insulating film 12 serving as a protective film is formed on the channel protective film 6d, the drain electrode 6h, and the source electrode 6i, and the channel protective film 6d, the drain electrode 6h, and the source electrode 6i are formed on the interlayer insulating film 12. It is covered by. The drive transistor 6 is covered with an interlayer insulating film 12. The interlayer insulating film 12 is made of, for example, silicon nitride or silicon oxide having a thickness of 100 nm to 200 nm.

  The capacitor 7 is connected between the gate electrode 6a and the source electrode 6i of the driving transistor 6, and as shown in FIG. 4, one electrode 7a is formed between the substrate 10 and the interlayer insulating film 11, The other electrode 7b is formed between the interlayer insulating film 11 and the interlayer insulating film 12, and the electrodes 7a and 7b are opposed to each other with the interlayer insulating film 11 as a dielectric interposed therebetween.

Note that the signal line 3, the electrode 7a of the capacitor 7, the gate electrode 5a of the switch transistor 5, and the gate electrode 6a of the drive transistor 6 are formed by forming a conductive film formed over the substrate 10 by a photolithography method, an etching method, or the like. It is formed at a time by processing.
The scanning line 2, the voltage supply line 4, the electrode 7 b of the capacitor 7, the drain electrode 5 h and source electrode 5 i of the switch transistor 5, and the drain electrode 6 h and source electrode 6 i of the driving transistor 6 are formed on the interlayer insulating film 11. The formed conductive film is formed by shape processing by a photolithography method, an etching method, or the like.

In the interlayer insulating film 11, a contact hole 11a is formed in a region where the gate electrode 5a and the scanning line 2 overlap, and a contact hole 11b is formed in a region where the drain electrode 5h and the signal line 3 overlap, and the gate electrode 6a. A contact hole 11c is formed in a region where the source electrode 5i overlaps, and contact plugs 20a to 20c are embedded in the contact holes 11a to 11c, respectively. The contact plug 20a electrically connects the gate electrode 5a of the switch transistor 5 and the scanning line 2, the contact plug 20b electrically connects the drain electrode 5h of the switch transistor 5 and the signal line 3, and the contact plug 20c electrically connects the switch transistor. 5 source electrode 5i and capacitor 7 electrode 7a are electrically connected, and source electrode 5i of switch transistor 5 and gate electrode 6a of drive transistor 6 are electrically connected. The scanning line 2 may be in direct contact with the gate electrode 5a, the drain electrode 5h may be in contact with the signal line 3, and the source electrode 5i may be in contact with the gate electrode 6a without using the contact plugs 20a to 20c.
The gate electrode 6a of the driving transistor 6 is integrally connected to the electrode 7a of the capacitor 7, the drain electrode 6h of the driving transistor 6 is integrally connected to the voltage supply line 4, and the source electrode 6i of the driving transistor 6 is connected to the capacitor. 7 is integrally connected to the electrode 7b.

The pixel electrode 8 a is provided on the substrate 10 via the interlayer insulating film 11 and is formed independently for each pixel P. The pixel electrode 8a is a transparent electrode, for example, tin-doped indium oxide (ITO), zinc-doped indium oxide, indium oxide (In ₂ O ₃ ), tin oxide (SnO ₂ ), zinc oxide (ZnO), or cadmium − It consists of tin oxide (CTO). The pixel electrode 8a partially overlaps the source electrode 6i of the driving transistor 6, and the pixel electrode 8a and the source electrode 6i are connected.
4 and 5, the interlayer insulating film 12 includes the scanning line 2, the signal line 3, the voltage supply line 4, the switch transistor 5, the driving transistor 6, the peripheral portion of the pixel electrode 8a, and the electrode of the capacitor 7. 7b and the interlayer insulating film 11 are formed.
An opening 12a is formed in the interlayer insulating film 12 so that the central portion of each pixel electrode 8a is exposed. The interlayer insulating film 12 is formed in a lattice shape in plan view.

As shown in FIGS. 4 and 5, the bank 13 extends in one direction along the signal line 3, and is parallel to the position covering the switch transistor 5 and the drive transistor 6 via the interlayer insulating film 12. It is formed in stripes as viewed.
The side wall 13a of the bank 13 is located inside the opening 12a of the interlayer insulating film 12, and the center side of the pixel electrode 8a is exposed between the opposing side walls 13a.
In the bank 13, when a hole injection layer 8b or a light emitting layer 8c described later is formed by a wet method, a liquid material in which a material for forming the hole injection layer 8b or the light emitting layer 8c is dissolved or dispersed in a solvent is adjacent. It functions as a partition wall that prevents the pixel P from bleeding. In addition, between the side walls 13a facing each other in the banks 13 arranged in parallel, a recess 13b is formed, and a liquid material is applied on the pixel electrode 8a in the recess 13b. The recess 13b extends in one direction like the bank 13.

  As shown in FIGS. 4 and 5, the EL element 8 includes a pixel electrode 8a as a first electrode serving as an anode, a hole injection layer 8b that is a compound film formed on the pixel electrode 8a, and a hole. A light emitting layer 8c, which is a compound film formed on the injection layer 8b, and a counter electrode 8d as a second electrode formed on the light emitting layer 8c are provided. The counter electrode 8d is a single electrode common to all the pixels P, and is continuously formed in all the pixels P.

The hole injection layer 8b is a carrier transport layer made of, for example, PEDOT (poly (ethylenedioxy) thiophene) as a conductive polymer and PSS (polystyrene sulfonate) as a dopant, This is a layer for injecting holes from the pixel electrode 8a toward the light emitting layer 8c.
The light emitting layer 8c includes a material that emits any one of R (red), G (green), and B (blue) for each pixel P. For example, carrier transport made of a polyfluorene-based light-emitting material or a polyphenylene vinylene-based light-emitting material. This is a layer that emits light when the electrons supplied from the counter electrode 8d and the holes injected from the hole injection layer 8b are recombined. For this reason, the pixel P that emits R (red), the pixel P that emits G (green), and the pixel P that emits B (blue) have different light emitting materials for the light emitting layer 8c. The R (red), G (green), and B (blue) pattern of the pixel P may be a stripe pattern in which the same color pixels are arranged in the vertical direction, or may be a delta arrangement.

The counter electrode 8d is made of a material having a work function lower than that of the pixel electrode 8a. For example, the counter electrode 8d is made of a simple substance or an alloy containing at least one of indium, magnesium, calcium, lithium, barium, and a rare earth metal.
The counter electrode 8d is an electrode common to all the pixels P, and covers a bank 13 described later together with a compound film such as the light emitting layer 8c.

As described above, the light emitting layer 8 c serving as a light emitting portion is partitioned for each pixel P by the interlayer insulating film 12 and the bank 13. In the recess 13b between the side walls 13a of the bank 13 in the opening 12a of the interlayer insulating film 12, a hole injection layer 8b and a light emitting layer 8c as a carrier transport layer are stacked on the pixel electrode 8a (FIG. 5).
Specifically, the sidewall 13 a of the bank 13 provided on the interlayer insulating film 12 is formed inside the opening 12 a of the interlayer insulating film 12.
Then, a liquid material containing a material to be the hole injection layer 8b is applied on the pixel electrode 8a surrounded by the opening 12a and sandwiched between the side walls 13a, and the substrate 10 is heated to dry the liquid material. The compound film thus formed becomes the hole injection layer 8b which is the first carrier transport layer.
Further, a liquid material containing a material to be the light emitting layer 8c is applied on the hole injection layer 8b surrounded by the opening 12a and sandwiched by the side walls 13a, and the substrate 10 is heated to dry the liquid material. The compound film thus formed becomes the light emitting layer 8c which is the second carrier transport layer.
A counter electrode 8d is provided so as to cover the light emitting layer 8c and the bank 13 (see FIG. 5).

In this EL panel 1, the pixel electrode 8a, the substrate 10 and the interlayer insulating film 11 are transparent, and the light emitted from the light emitting layer 8c is transmitted through the pixel electrode 8a, the interlayer insulating film 11 and the substrate 10 and emitted. . Therefore, the back surface of the substrate 10 becomes a display surface.
The display surface may be the opposite side instead of the substrate 10 side. In this case, the counter electrode 8d is a transparent electrode, the pixel electrode 8a is a reflective electrode, and light emitted from the light emitting layer 8c is transmitted through the counter electrode 8d and emitted.

The EL panel 1 is driven as follows to emit light.
In a state where a predetermined level of voltage is applied to all the voltage supply lines 4, the scanning driver sequentially applies voltages to the scanning lines 2, thereby sequentially selecting the scanning lines 2.
When each scanning line 2 is selected, if a voltage of a level corresponding to the gradation is applied to all the signal lines 3 by the data driver, the switch transistor 5 corresponding to the selected scanning line 2 is turned on. Therefore, a voltage of a level corresponding to the gradation is applied to the gate electrode 6a of the drive transistor 6.
The potential difference between the gate electrode 6a and the source electrode 6i of the drive transistor 6 is determined according to the voltage applied to the gate electrode 6a of the drive transistor 6, and the magnitude of the drain-source current in the drive transistor 6 is determined. The EL element 8 emits light with brightness according to the drain-source current.
Thereafter, when the selection of the scanning line 2 is released, the switch transistor 5 is turned off, so that the charge according to the voltage applied to the gate electrode 6a of the driving transistor 6 is stored in the capacitor 7 and the driving transistor 6 The potential difference between the gate electrode 6a and the source electrode 6i is maintained.
For this reason, the drive transistor 6 keeps flowing the drain-source current having the same current value as that at the time of selection, and maintains the luminance of the EL element 8.

  Next, a method for manufacturing the EL panel 1 will be described.

A gate metal layer is deposited on the substrate 10 by sputtering and patterned by photolithography to form the signal line 3, the electrode 7a of the capacitor 7, the gate electrode 5a of the switch transistor 5, and the gate electrode 6a of the driving transistor 6. Next, an interlayer insulating film 11 to be a gate insulating film such as silicon nitride is deposited by plasma CVD. A contact hole (not shown) is formed in the interlayer insulating film 11 to open an external connection terminal of each scanning line 2 for connection to a scanning driver located on one side of the EL panel 1.
Next, a semiconductor layer such as amorphous silicon that becomes the semiconductor film 6b (5b) and an insulating layer such as silicon nitride that becomes the channel protective film 6d (5d) are successively deposited, and then the channel protective film 6d (5d) is formed by photolithography. After pattern formation and an impurity layer to be the impurity semiconductor films 6f and 6g (5f and 5g) are deposited, the impurity layer and the semiconductor layer are successively patterned by photolithography to form the impurity semiconductor films 6f and 6g (5f and 5g). Then, the semiconductor film 6b (5b) is formed.
Then, contact holes 11a to 11c are formed by photolithography. Next, contact plugs 20a to 20c are formed in the contact holes 11a to 11c. This step may be omitted.
The source and drain metal layers to be the drain electrode 5h and the source electrode 5i of the switch transistor 5 and the drain electrode 6h and the source electrode 6i of the driving transistor 6 are deposited and appropriately patterned to form the scanning line 2, the voltage supply line 4, and the capacitor 7 Electrode 7b, switch transistor 5 drain electrode 5h, source electrode 5i, and drive transistor 6 drain electrode 6h, source electrode 6i. Thus, the switch transistor 5 and the drive transistor 6 are formed. Thereafter, an ITO film is deposited and then patterned to form the pixel electrode 8a.
Then, an insulating film is formed by vapor deposition so as to cover the switch transistor 5, the driving transistor 6, and the like, and the insulating film is patterned by photolithography, thereby opening the opening 12a from which the central portion of the pixel electrode 8a is exposed. An interlayer insulating film 12 having the following is formed. Together with the opening 12a, an external connection terminal of the scanning line 2 (not shown), an external connection terminal of each signal line 3 for connecting to a data driver located on one side of the EL panel 1, and an external connection terminal of the voltage supply line 4 are respectively provided. A plurality of contact holes to be opened are formed.
Next, a photosensitive resin such as polyimide is deposited and exposed to form a striped bank 13 on which the side wall 13a is located on the pixel electrode 8a. The bank 13 exposes a contact hole (not shown) that opens the external connection terminal.

Then, as shown in FIG. 6 (FIGS. 1, 2, and 4), a lattice-shaped interlayer insulating film 12 that opens the plurality of pixel electrodes 8a for each pixel P and a recess 13b between the striped banks 13 are formed. The pixel electrode 8a is exposed.
In the EL panel 1 shown in FIG. 1, a region where a plurality of pixels P are arranged in a grid shape between the banks 13 arranged in parallel on the center side of one surface of the substrate 10 is a first region. The light emitting region R1 and the region surrounding the light emitting region R1 is the non-light emitting region R2 as the second region.
The light emitting region R1 is a coating region R1 to which a liquid L in which a material for a carrier transport layer is dissolved or dispersed in a solvent is applied, and the non-light emitting region R2 is a non-coating in which the liquid L is not applied. Region R2.

  Then, as shown in FIGS. 7, 8, and 9, a predetermined mask M is arranged on the upper surface side of the substrate 10 on which the plurality of banks 13 extending in one direction are formed, and the mask M is interposed through the mask M. On the pixel electrode 8a between the banks 13 in the coating region R1 of the substrate 10, a liquid material L in which a material to be the hole injection layer 8b or the light emitting layer 8c is dissolved or dispersed in a solvent is applied through a nozzle N, and the liquid material By drying L, the hole injection layer 8b and the light emitting layer 8c which are carrier transport layers are formed. The recess 13b between the banks 13 also extends in one direction.

Specifically, as shown in FIG. 7, the mask M includes an opening 31 where the application region R1 is exposed from the opening on the center side, and a frame portion 32 that covers the non-application region R2 with a lower surface. An inclined surface 33 is inclined from the upper surface of 32 toward the lower surface on the opening 31 side. The inclined surface 33 is an edge of a pair of openings in the frame portion 32 facing in one direction across the opening portion 31 of the mask M, and is formed on the upper surface side of the frame portion 32.
By forming a pair of slopes 33 at the edge of the frame 32 of the mask M on the opening 31 side, the opening of the mask M is substantially tapered so that the lower surface side is narrower than the upper surface side. . In addition, it is preferable that the angle | corner which the lower surface of the frame part 32 and the slope 33 make with the opening part 31 is 45 degrees or less.

The opening 31 of the mask M is aligned with the application region R1, and the frame portion 32 is disposed so as to overlap the non-application region R2. As shown in FIGS. 8 and 9, the liquid L adheres to the non-application region R2. The liquid L is selectively applied to the application region R1 on the substrate 10 through the relatively moving nozzle N in a state of being covered with the mask M so as not to be staggered, and the hole injection layer 8b which is a carrier transport layer, A light emitting layer 8c is formed.
In FIG. 8, one nozzle N is shown in a simplified manner such that the liquid material L is applied by moving relative to each other in each pixel row, but in reality, R (red), G (green), Since the pixel rows of each color of B (blue) are arranged in order, the three nozzles N for each color apply the liquid material L of each color every three rows.

When applying the liquid L containing the material that becomes the carrier transport layer to the application region R1 of the substrate 10, at least one of the stage S on which the substrate 10 on which the mask M is disposed and the nozzle N are placed. The predetermined liquid material L is poured out from the nozzle N while relatively moving the liquid material L, and the liquid material L is spread over the coating region R1 in the opening 31 of the mask M and the upper surface of the frame portion 32 of the mask M. An application process by a nozzle printing method for continuous application is performed.
Here, the light-emitting panel manufacturing apparatus 100 used in this coating process includes a nozzle N and a mask M disposed on the upper surface side of the substrate 10 as shown in FIG. 9, and further moves the nozzle N (not shown). The nozzle moving mechanism, the stage S on which the substrate 10 on which the mask M is disposed, and a stage moving mechanism (not shown) for moving the stage S are configured.

Then, the stage N on which the substrate 10 is placed is moved in one direction by a stage moving mechanism (not shown), so that the nozzle N is relatively moved in the direction opposite to the positive direction of one direction, and the nozzle movement (not shown) is also performed. While the nozzle N is moved relative to the direction crossing one direction by the mechanism, the liquid L is poured out from the nozzle N and applied to the pixel electrode 8a of the recess 13b.
Specifically, in this coating process, the nozzle N is moved relative to the positive direction in one direction (for example, the downward direction in the vertical direction in FIG. 8), and the frame portion 32 of the mask M from the coating region R1 of the substrate 10. The liquid material L is applied to the upper surface of the nozzle member, and the nozzle N is positioned at a position corresponding to the upper portion of the frame portion 32, and the nozzle N is relative to a direction intersecting one direction (for example, rightward in the left-right direction in FIG. 8). After the movement, the liquid material is transferred from the upper surface of the frame portion 32 of the mask M to the application region R1 of the substrate 10 while moving the nozzle N in the opposite direction of one direction (for example, upward in the vertical direction in FIG. 8). The application of L is repeated, and a predetermined liquid L serving as a carrier transport layer is applied onto all the pixel electrodes 8a in the application region R1.

In particular, when the liquid N is applied to the upper surface of the frame portion 32 of the mask M from the application region R1 of the substrate 10 by the relative movement of the nozzle N in the forward direction or the reverse direction of one direction, the frame portion of the mask M When the liquid L is applied from the upper surface of the substrate 32 to the application region R1 of the substrate 10, the inclined surface 33 is formed at the edge of the frame portion 32 through which the nozzle N passes. As shown in FIG. 9, the liquid L applied by the nozzle printing method that flows out onto the substrate smoothly runs on the inclined surface 33 of the frame portion 32 from the substrate 10 in the opening portion 31 or opens from the inclined surface 33 of the frame portion 32. The substrate 10 in the portion 31 is smoothly lowered.
That is, since the edge of the opening 31 corresponding to the lower end of the inclined surface 33 of the mask M is located at the boundary between the application region R1 and the non-application region R2 on the substrate 10, the boundary between the application region R1 and the non-application region R2 Since there is no inner wall surface of the opening 31 that stands up at a point, a liquid that forms a smooth liquid surface in the application region R1 without generating a conventional meniscus (Lm) by applying the liquid L (see FIG. 16). The body L is applied and dried.

And the liquid L apply | coated to application | coating area | region R1 by the nozzle N which moves relatively is dried, and the compound film | membrane without a meniscus is formed into a film, comparatively smooth hole injection layer 8b or light emitting layer 8c is formed.
In addition, after apply | coating and drying the liquid body L used as the positive hole injection layer 8b on the pixel electrode 8a in the recessed part 13b between the banks 13, the liquid material L used as the light emitting layer 8c is further apply | coated and dried to the recessed part 13b. Thus, as shown in FIG. 10, a two-layer carrier transport layer in which the hole injection layer 8b and the light emitting layer 8c are formed can be formed.

Then, after removing the mask M from the upper surface side of the substrate 10, the counter electrode 8d is formed over the bank 13 and the light emitting layer 8c. Since the light emitting layer 8c, which is the carrier transport layer, has no steps or irregularities due to the meniscus, it can be suitably formed without disconnecting the counter electrode 8d.
By forming the counter electrode 8d in this way, the EL element 8 and the EL panel 1 are manufactured as shown in FIG.

  As described above, the opening portion 31 from which the application region R1 is exposed and the frame portion 32 that covers the non-application region R2 are provided, which is the opening portion 31 side of the frame portion 32 and from the upper surface of the frame portion 32 to the opening portion 31 side. A frame portion 32 of the mask M having an inclined surface 33 that is inclined toward the lower surface of the mask M is disposed so as to overlap the non-application region R2 of the substrate 10, and the frame portion 32 extends from the application region R1 in the opening 31 of the mask M. If the liquid material L is applied by the nozzle printing method in which the nozzle N is relatively moved from the inclined surface 33 of the frame portion 32 to the application region R1 in the opening 31, the non-application region is not applied to the application region R1. The meniscus of the liquid material L does not occur between the regions R2, and the liquid material L can be applied smoothly to the application region R1, so that poor film formation of the carrier transport layer can be reduced.

The present invention is not limited to the above embodiment.
For example, as shown in FIG. 11, the mask of the light emitting panel manufacturing apparatus 100 includes an opening 31 where the application region R1 is exposed from the opening on the center side, and a frame portion 32 that covers the non-application region R2 with the lower surface. A pair of inclined surfaces 33 are inclined from the upper surface of the frame portion 32 toward the lower surface on the opening 31 side, and the coating in the opening portion 31 corresponds to the direction in which the mask is disposed on the substrate 10. Even the mask M1 having a width corresponding to the width of the recess 13b between the banks 13 provided in the region R1 and extending in one direction and continuing to the recess 13b is formed. Good. In addition, the groove part 34 is formed in the frame part 32 and the inclined surface 33.
The groove portion 34 of the mask M1 disposed on the substrate 10 is continuous with the concave portion 13b of the application region R1, and the liquid L applied in one direction along the concave portion 13b is contained in the groove portion 34 of the mask M1. To be applied continuously.
In the case of this mask M1, the liquid materials L of R (red), G (green), and B (blue), which are separately applied by the nozzle N, are contained in the groove 34 and mixed on the frame 32. Therefore, even if the liquid L applied to the frame portion 32 and the inclined surface 33 may flow down the inclined surface 33, the liquid L of different colors may be mixed for each pixel column in the application region R1. There is no.
Therefore, the liquid L can be more suitably applied to the application region R1.

Further, as shown in FIGS. 12A and 12B, the mask of the light emitting panel manufacturing apparatus 100 extends on the slope 33 in the mask M1 (see FIG. 11) in a direction intersecting the inclination direction of the slope 33. The mask M2 in which the crossing groove part 35 to be formed may be formed. The intersecting groove portion 35 also intersects with the plurality of groove portions 34.
In the case of this mask M2, the liquid materials L of R (red), G (green), and B (blue), which are separately applied by the nozzle N, are mixed on the upper surface of the frame portion 32, and flow down the slope 33. Even if this happens, the mixed liquid material L remains in the intersecting groove portion 35, and the mixed liquid material L does not reach the coating region R1.
Therefore, the liquid L can be more suitably applied to the application region R1.
The intersecting groove 35 may be formed on the slope 33 of the mask M where the groove 34 is not formed.

The EL panel 1 formed and manufactured as described above by the light emitting panel manufacturing apparatus 100 is used as a display panel of various electronic devices.
For example, the display panel 1a of the mobile phone 200 shown in FIG. 13, the display panel 1b of the digital camera 300 shown in FIGS. 14A and 14B, or the display panel 1c of the personal computer 400 shown in FIG. The EL panel 1 can be applied.

In the above embodiment, the planar slope 33 is illustrated and described. However, the present invention is not limited to this, and for example, the slope 33 has a convex or concave curved surface. It may be.
The slopes 33 are not limited to a pair formed on the frame portions 32 facing in one direction, but may be two pairs of slopes 33 formed on the frame portions 32 facing each other. If two pairs of inclined surfaces 33 are formed on a mask having a square opening 31, even if the orientation of the mask disposed on the substrate 10 is different by 90 °, the inclined surfaces 33 are arranged corresponding to the application direction of the liquid L. be able to.

  In addition, it is needless to say that other specific detailed structures can be appropriately changed.

1 EL panel (light emitting panel)
8 EL element 8a Pixel electrode (first electrode)
8b Hole injection layer (carrier transport layer)
8c Light emitting layer (carrier transport layer)
8d Counter electrode (second electrode)
10 substrates 13 banks
13a Side wall 13b Concave portion 31 Opening portion 32 Frame portion 33 Slope 34 Groove portion 35 Cross groove portion 100 Light emitting panel manufacturing apparatus L Liquid material Lm Meniscus M, M1, M2 Mask N Nozzle P Pixel R1 Application region, Light emitting region (first region)
R2 Non-coating area, non-light emitting area (second area)
S stage

Claims (6)

A first region that is a central side of one surface of the substrate; and a second region that surrounds the first region, and the first region covers the first electrode and the first electrode. In the method for manufacturing a light-emitting panel in which a carrier transport layer and a second electrode covering the carrier transport layer are formed,
An inclined surface that includes an opening from which the first region is exposed and a frame that covers the second region with a lower surface, and is inclined from the upper surface of the frame toward the lower surface on the opening side of the frame. Arranging the frame portion of the mask to overlap the second region,
While moving the nozzle relative to the substrate on which the mask is disposed, the liquid material in which the material serving as the carrier transport layer is dissolved or dispersed in the solvent is poured out from the nozzle, and the liquid material, The manufacturing method of the light emission panel characterized by including the application | coating process apply | coated across said 1st area | region in an opening part, and the said slope of the said frame part of the said mask. In the coating step,
The liquid material is applied from the first region of the substrate to the slope of the frame portion of the mask while the nozzle is relatively moved in the positive direction of one direction, and then the nozzle is applied to the frame portion. At a corresponding position, the nozzle is relatively moved in a direction intersecting the one direction, and then the nozzle is relatively moved in a direction opposite to the one direction, from above the inclined surface of the frame portion of the mask. The method for manufacturing a light-emitting panel according to claim 1, wherein the liquid material is applied over the first region of the substrate. A first region which is a central side of one surface of the substrate, and a second region which is the periphery of the first region, and the first region extends in one direction in the first region. An apparatus for manufacturing a light-emitting panel, comprising: a plurality of partition walls; a carrier transport layer that covers the first electrode with a recess extending in one direction between the partition walls; and a second electrode that covers the carrier transport layer. And
An inclined surface that includes an opening from which the first region is exposed and a frame that covers the second region with a lower surface, and is inclined from the upper surface of the frame toward the lower surface on the opening side of the frame. Having a mask;
While moving relative to the substrate on which the mask is arranged so that the inclined direction of the inclined surface coincides with the one direction and the frame portion overlaps the second region, Pouring out a liquid material in which the material is dissolved or dispersed in a solvent and applying the liquid material;
An apparatus for manufacturing a light-emitting panel, comprising:   The inclined surface is coated with the liquid material from the first region of the substrate to the upper surface of the frame portion of the mask when the nozzle is relatively moved in the forward or reverse direction of one direction, and the mask. 4. When the liquid material is applied from the upper surface of the frame portion to the first region of the substrate, it is formed on the upper surface side of the edge of the frame portion through which the nozzle passes. The manufacturing apparatus of the light emission panel as described in any one of.   The frame has a width corresponding to the width of the recess between the partition walls provided in the first region in the opening corresponding to the direction in which the mask is disposed on the substrate. 5. The light emitting panel manufacturing apparatus according to claim 3, wherein a groove portion extending in the direction of and continuous with the concave portion is formed.   The light emitting panel manufacturing apparatus according to any one of claims 3 to 5, wherein an intersection groove portion extending in a direction intersecting the inclination direction is formed on the slope.

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