JP2011014205A5 - - Google Patents

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Publication number
JP2011014205A5
JP2011014205A5 JP2009158678A JP2009158678A JP2011014205A5 JP 2011014205 A5 JP2011014205 A5 JP 2011014205A5 JP 2009158678 A JP2009158678 A JP 2009158678A JP 2009158678 A JP2009158678 A JP 2009158678A JP 2011014205 A5 JP2011014205 A5 JP 2011014205A5
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JP
Japan
Prior art keywords
program voltage
memory device
semiconductor memory
memory cells
bits
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009158678A
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English (en)
Japanese (ja)
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JP2011014205A (ja
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Publication date
Application filed filed Critical
Priority to JP2009158678A priority Critical patent/JP2011014205A/ja
Priority claimed from JP2009158678A external-priority patent/JP2011014205A/ja
Priority to US12/821,632 priority patent/US8379452B2/en
Publication of JP2011014205A publication Critical patent/JP2011014205A/ja
Publication of JP2011014205A5 publication Critical patent/JP2011014205A5/ja
Pending legal-status Critical Current

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JP2009158678A 2009-07-03 2009-07-03 不揮発性半導体記憶装置 Pending JP2011014205A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009158678A JP2011014205A (ja) 2009-07-03 2009-07-03 不揮発性半導体記憶装置
US12/821,632 US8379452B2 (en) 2009-07-03 2010-06-23 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009158678A JP2011014205A (ja) 2009-07-03 2009-07-03 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2011014205A JP2011014205A (ja) 2011-01-20
JP2011014205A5 true JP2011014205A5 (https=) 2012-05-24

Family

ID=43412577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009158678A Pending JP2011014205A (ja) 2009-07-03 2009-07-03 不揮発性半導体記憶装置

Country Status (2)

Country Link
US (1) US8379452B2 (https=)
JP (1) JP2011014205A (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101989850B1 (ko) 2012-04-03 2019-06-18 삼성전자주식회사 불휘발성 메모리 장치, 메모리 시스템 및 그것의 프로그램 방법
JP2015525799A (ja) 2012-08-10 2015-09-07 ユニバーシティ・オブ・ノース・テキサス・ヘルス・サイエンス・センターＵｎｉｖｅｒｓｉｔｙ ｏｆ Ｎｏｒｔｈ Ｔｅｘａｓ Ｈｅａｌｔｈ Ｓｃｉｅｎｃｅ Ｃｅｎｔｅｒ ターゲティングポリアミノ酸および脂肪酸のコンジュゲートを含む薬物送達ビークル
US9123401B2 (en) * 2012-10-15 2015-09-01 Silicon Storage Technology, Inc. Non-volatile memory array and method of using same for fractional word programming
US11069411B2 (en) 2013-03-14 2021-07-20 Silicon Storage Technology, Inc. Programming circuit and method for flash memory array
US20140282092A1 (en) * 2013-03-14 2014-09-18 Daniel E. Riddell Contextual information interface associated with media content
US9093161B2 (en) 2013-03-14 2015-07-28 Sillicon Storage Technology, Inc. Dynamic programming of advanced nanometer flash memory
US9183947B1 (en) * 2014-04-16 2015-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Detecting write disturb in multi-port memories
JP2016157505A (ja) * 2015-02-26 2016-09-01 ルネサスエレクトロニクス株式会社 半導体装置
US10249346B2 (en) * 2017-07-13 2019-04-02 Winbond Electronics Corp. Power supply and power supplying method thereof for data programming operation
US10522226B2 (en) * 2018-05-01 2019-12-31 Silicon Storage Technology, Inc. Method and apparatus for high voltage generation for analog neural memory in deep learning artificial neural network
JP2020098655A (ja) * 2018-12-17 2020-06-25 キオクシア株式会社 半導体記憶装置
IT201900011523A1 (it) * 2019-07-11 2021-01-11 St Microelectronics Srl Memoria a cambiamento di fase con circuito di regolazione della tensione di alimentazione
CN114664352B (zh) * 2020-12-23 2025-06-10 华邦电子股份有限公司 内存电路及内存编程方法
JP2025030267A (ja) * 2023-08-23 2025-03-07 トヨタ自動車株式会社 情報処理装置

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EP0756286B1 (en) * 1995-07-24 2000-01-26 STMicroelectronics S.r.l. Flash EEPROM with on-chip erase source voltage generator
DE69521203T2 (de) * 1995-07-31 2006-01-12 Stmicroelectronics S.R.L., Agrate Brianza Flash-EEPROM mit gesteuerter Entladungszeit der Wortleitungs- und Sourcespannungen nach der Löschung
JPH10269787A (ja) * 1997-03-27 1998-10-09 Mitsubishi Electric Corp 半導体記憶装置
KR100368315B1 (ko) * 1999-12-28 2003-01-24 주식회사 하이닉스반도체 플래시 메모리의 어드레스 버퍼
JP2001195890A (ja) * 2000-01-12 2001-07-19 Sharp Corp 不揮発性半導体メモリ装置の書込み方式および書込み回路
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JP2003123493A (ja) * 2001-10-12 2003-04-25 Fujitsu Ltd ソース電位を制御してプログラム動作を最適化した不揮発性メモリ
JP2003157679A (ja) * 2001-11-20 2003-05-30 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
KR100474201B1 (ko) * 2002-05-17 2005-03-08 주식회사 하이닉스반도체 낸드형 플래시 메모리의 워드 라인 디코더
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KR101333503B1 (ko) * 2006-02-03 2013-11-28 삼성전자주식회사 프로그램 셀의 수에 따라 프로그램 전압을 조절하는 반도체메모리 장치 및 그것의 프로그램 방법

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