JP2011009746A - エピタキシャル被覆された半導体ウェハの製造方法 - Google Patents
エピタキシャル被覆された半導体ウェハの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000005498 polishing Methods 0.000 claims abstract description 83
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 239000000725 suspension Substances 0.000 claims abstract description 13
- 239000006061 abrasive grain Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 6
- 239000003082 abrasive agent Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- -1 4 OH) Chemical class 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 10
- 239000007787 solid Substances 0.000 abstract description 4
- 238000012876 topography Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 76
- 239000013078 crystal Substances 0.000 description 19
- 239000000243 solution Substances 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003139 biocide Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 239000003755 preservative agent Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000003352 sequestering agent Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000005501 phase interface Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】記載された順序で次の:(a)半導体ウェハの片面にエピタキシャル層を堆積させる工程、(b)前記半導体ウェハのエピタキシャル被覆された側を固定砥粒を有する研磨パッドを使用して固体を含まない研磨剤溶液を供給しながら第1の研磨を行う工程、(c)前記半導体ウェハのエピタキシャル被覆された側を、固定砥粒を有していない軟質の研磨パッドを使用して研磨剤懸濁液を供給しながらCMP研磨を行う工程、(d)前記半導体ウェハの予めエピタキシャル被覆されかつ研磨された側に新たなエピタキシャル層を堆積させる工程を有する、エピタキシャル被覆された半導体ウェハを製造する方法。
【選択図】なし
Description
a) 単結晶半導体棒の製造(結晶成長);
b) 前記棒を個別のウェハに切断;
c) 機械的加工;
d) 化学的加工;
e) 化学機械的加工;
f) 場合による層構造体の製造。
a) 特にエピタキシャル被覆された半導体ウェハに対する短い空間波領域(THA2)での局所的ジオメトリー及び特にナノトポグラフィーの改善。
平滑化工程1:
時間=240sec
シリカゾル体積流量=350ml min
ヘッド 盤の回転数の比率=23rpm:43rpm
リテーナーリング圧力(フローティングリテーナーリング)=2psi
前記キャリアの加圧区域中の圧力=内側の加圧区域において2psi、外側の加圧区域において2psi
(両方の同心の内側及び外側の加圧区域に対して)
研磨圧力=4psi
時間=60sec
シリカゾル体積流量=350ml min
ヘッド 盤の回転数の比率=23rpm:24rpm
リテーナーリング圧力(フローティングリテーナーリング)=2psi
前記キャリアの加圧区域中の圧力=内側加圧区域において2psi、外側加圧区域において2psi
研磨圧力=0.5psi
研磨剤溶液として、それぞれ0.2質量%のK2CO3溶液が使用された。
時間=485sec
K2CO3溶液(0.2質量%)の体積流量=1500ml min
ヘッド 盤の回転数の比率=23rpm:43rpm
リテーナーリング圧力(フローティングリテーナーリング)=2psi
前記キャリアの加圧区域中の圧力=内側加圧区域において2psi、外側加圧区域において2psi
研磨圧力=4psi
時間=242sec
K2CO3溶液(0.2質量%)の体積流量=1500ml min
ヘッド 盤の回転数の比率=23rpm:43rpm
リテーナーリング圧力(フローティングリテーナーリング)=2psi
前記キャリアの加圧区域中の圧力=内側加圧区域において2psi、外側加圧区域において2psi
研磨圧力=4psi
時間=120sec
K2CO3溶液(0.2質量%)の体積流量=1500ml min
ヘッド 盤の回転数の比率=23rpm:43rpm
リテーナーリング圧力(フローティングリテーナーリング)=2psi
前記キャリアの加圧区域中の圧力=内側加圧区域において2psi、外側加圧区域において2psi
研磨圧力=4psi
Claims (10)
- 記載された順序で次の工程:(a)半導体ウェハの片面にエピタキシャル層を堆積させる工程、(b)前記半導体ウェハのエピタキシャル被覆された側を固定砥粒を有する研磨パッドを使用して固体を含まない研磨剤溶液を供給しながら第1の研磨を行う工程、(c)前記半導体ウェハのエピタキシャル被覆された側を、固定砥粒を有していない軟質の研磨パッドを使用して研磨剤懸濁液を供給しながらCMP研磨を行う工程、(d)前記半導体ウェハの予めエピタキシャル被覆されかつ研磨された側に新たなエピタキシャル層を堆積させる工程を有する、エピタキシャル被覆された半導体ウェハを製造する方法。
- 工程(a)において堆積された層の厚さは0.5〜4μmである、請求項1記載の方法。
- 工程(b)において使用された研磨パッドは、セリウム、アルミニウム、ケイ素及びジルコニウムの元素の酸化物の粒子を有するか又は炭化ケイ素、窒化ホウ素及びダイアモンドからなる硬質材料のグループから選択される粒子を有する固定砥粒を含有する、請求項1又は2記載の方法。
- 工程(b)において使用された研磨剤溶液は、炭酸ナトリウム(Na2CO3)、炭酸カリウム(K2CO3)、水酸化ナトリウム(NaOH)、水酸化カリウム(KOH)、水酸化アンモニウム(NH4OH)、テトラメチルアンモニウムヒドロキシド(TMAH)のような化合物又はこれらの任意の混合物を含有する、請求項1から3までのいずれか1項記載の方法。
- 前記研磨溶液のpH値は10〜12である、請求項1から4までのいずれか1項記載の方法。
- 工程(c)による前記研磨剤懸濁液は、アルミニウム、セリウム又はケイ素の元素の酸化物の1種以上を有する研磨材料を有する、請求項1から5までのいずれか1項記載の方法。
- 前記研磨剤懸濁液は酸化ケイ素を含有し、これはコロイド分散性シリカゾルである、請求項6記載の方法。
- 前記工程(b)及び(c)の全体の研磨量は0.5〜2.5μmであり、前記半導体ウェハは、工程(d)における第2の被覆の前に、少なくとも0.2μmの厚さのエピタキシャル層を有する、請求項1から7までのいずれか1項記載の方法。
- 前記半導体ウェハは、工程(d)による第2のエピタキシャル被覆の後で0.5〜5μmの厚さを有する、請求項1から8までのいずれか1項記載の方法。
- 前記半導体ウェハは、300mm以上の直径、有利に450の直径を有するシリコンウェハである、請求項1から9までのいずれか1項記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009030296A DE102009030296B4 (de) | 2009-06-24 | 2009-06-24 | Verfahren zur Herstellung einer epitaxierten Siliciumscheibe |
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JP2011009746A true JP2011009746A (ja) | 2011-01-13 |
Family
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Family Applications (1)
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JP2010142492A Pending JP2011009746A (ja) | 2009-06-24 | 2010-06-23 | エピタキシャル被覆された半導体ウェハの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8551870B2 (ja) |
JP (1) | JP2011009746A (ja) |
KR (1) | KR101169527B1 (ja) |
CN (1) | CN101930911B (ja) |
DE (1) | DE102009030296B4 (ja) |
TW (1) | TWI430352B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013069938A1 (en) * | 2011-11-07 | 2013-05-16 | Lg Siltron Inc. | Surface treatment method of polishing pad and polishing method of wafer using the same |
JP2018160557A (ja) * | 2017-03-23 | 2018-10-11 | 株式会社ディスコ | 固形研磨剤及び固形研磨剤を使用した研磨方法 |
US10208400B2 (en) | 2015-02-02 | 2019-02-19 | Fuji Electric Co., Ltd. | Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102010005904B4 (de) | 2010-01-27 | 2012-11-22 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
TWI456649B (zh) * | 2011-10-27 | 2014-10-11 | Atomic Energy Council | 去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法 |
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DE102013213839A1 (de) | 2013-07-15 | 2015-01-15 | Siltronic Ag | Verfahren zur Herstellung einer hochdotierten Halbleiterscheibe |
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Also Published As
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KR101169527B1 (ko) | 2012-07-27 |
TW201108317A (en) | 2011-03-01 |
US8551870B2 (en) | 2013-10-08 |
US20100330786A1 (en) | 2010-12-30 |
TWI430352B (zh) | 2014-03-11 |
CN101930911B (zh) | 2013-03-13 |
KR20100138747A (ko) | 2010-12-31 |
DE102009030296A1 (de) | 2011-01-05 |
CN101930911A (zh) | 2010-12-29 |
DE102009030296B4 (de) | 2013-05-08 |
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