TWI456649B - 去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法 - Google Patents

去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法 Download PDF

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TWI456649B
TWI456649B TW100139187A TW100139187A TWI456649B TW I456649 B TWI456649 B TW I456649B TW 100139187 A TW100139187 A TW 100139187A TW 100139187 A TW100139187 A TW 100139187A TW I456649 B TWI456649 B TW I456649B
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Taiwan
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metallurgical grade
ruthenium wafer
gas
purified
wafer
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TW100139187A
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English (en)
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TW201318052A (zh
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Jin Jang Jheng
Tsun Neng Yang
Chin Chen Chiang
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Atomic Energy Council
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Claims (6)

  1. 一種去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法，係於反應腔體中以連續製程進行，包括有下列步驟：(a)表面清潔：使用濃度小於5%之鹽酸(HCl)氣體與氫氣(H2 )之混合氣體，讓鹽酸氣體與提純冶金級矽晶圓表面金屬雜質形成金屬氯化物，在溫度大於1150℃之高溫環境下，使金屬氯化物自提純冶金級矽晶圓表面蒸發，並利用氫氣將金屬氯化物帶走；(b)形成多孔矽結構：使用濃度為10%左右之鹽酸氣體與氫氣之混合氣體，在溫度為1000℃左右之高溫下對提純冶金級矽晶圓表面進行蝕刻並形成多孔結構；(c)熱退火處理：於氫氣之環境下對提純冶金級矽晶圓進行溫度大於1000℃之高溫熱處理；以及(d)熱蝕刻：使用濃度大於5%之鹽酸氣體與氫氣之混合氣體，在溫度大於1150℃之高溫下蝕刻移除提純冶金級矽晶圓表面之多孔結構。
  2. 依申請專利範圍第1項所述之去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法，其中，該反應腔體係可為常壓式化學氣相沉積(Atmospheric Pressure-Chemical Vapor Deposition,AP-CVD)系統。
  3. 依申請專利範圍第1項所述之去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法，其中，該提純冶金級矽晶圓，其純度係可為4N~6N(99.99%-99.9999%)之間，且厚度係可為200μm。
  4. 一種去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法，係於反應腔體中以連續製程進行，包括有下列步驟：(a)形成多孔矽結構：使用濃度為10%左右之鹽酸(HCl)氣體與氫氣(H2 )之混合氣體，在溫度為1000℃左右之高溫下對提純冶金級矽晶圓表面進行蝕刻並形成多孔結構；(b)熱退火處理：於氫氣之環境下對提純冶金級矽晶圓進行溫度大於1000℃之高溫熱處理；以及(c)熱蝕刻：使用濃度大於5%之鹽酸氣體與氫氣之混合氣體，在溫度大於1150℃之高溫下蝕刻移除提純冶金級矽晶圓表面之多孔結構。
  5. 依申請專利範圍第4項所述之去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法，其中，該反應腔體係可為常壓式化學氣相沉積(Atmospheric Pressure-Chemical Vapor Deposition,AP-CVD)系統。
  6. 依申請專利範圍第4項所述之去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法，其中，該提純冶金級矽晶圓，其純度係可為4N~6N(99.99%-99.9999%)之間，且厚度係可為200μm。
TW100139187A 2011-10-27 2011-10-27 去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法 TWI456649B (zh)

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3556879A (en) * 1968-03-20 1971-01-19 Rca Corp Method of treating semiconductor devices
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
US20020102857A1 (en) * 1997-12-26 2002-08-01 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same
US7081303B2 (en) * 2002-03-15 2006-07-25 Canon Kabushiki Kaisha Function device and method for manufacturing the same, perpendicular magnetic recording medium, magnetic recording/reproduction apparatus and information processing apparatus
US20080026952A1 (en) * 2005-12-21 2008-01-31 Roche Palo Alto Llc HCV replicon shuttle vectors
US20080202582A1 (en) * 2004-01-15 2008-08-28 Japan Science And Technology Agency Process for Producing Monocrystal Thin Film and Monocrystal Thin Film Device
US20090039319A1 (en) * 2003-04-14 2009-02-12 S'tile Sintered semiconductor material
US20090253252A1 (en) * 2008-03-05 2009-10-08 Angel Sanjurjo Substrates for silicon solar cells and methods of producing the same
US20100330786A1 (en) * 2009-06-24 2010-12-30 Siltronic Ag Method For Producing An Epitaxially Coated Semiconductor Wafer

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3556879A (en) * 1968-03-20 1971-01-19 Rca Corp Method of treating semiconductor devices
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
US20020102857A1 (en) * 1997-12-26 2002-08-01 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same
US7081303B2 (en) * 2002-03-15 2006-07-25 Canon Kabushiki Kaisha Function device and method for manufacturing the same, perpendicular magnetic recording medium, magnetic recording/reproduction apparatus and information processing apparatus
US20090039319A1 (en) * 2003-04-14 2009-02-12 S'tile Sintered semiconductor material
US20080202582A1 (en) * 2004-01-15 2008-08-28 Japan Science And Technology Agency Process for Producing Monocrystal Thin Film and Monocrystal Thin Film Device
US20080026952A1 (en) * 2005-12-21 2008-01-31 Roche Palo Alto Llc HCV replicon shuttle vectors
US20090253252A1 (en) * 2008-03-05 2009-10-08 Angel Sanjurjo Substrates for silicon solar cells and methods of producing the same
US20100330786A1 (en) * 2009-06-24 2010-12-30 Siltronic Ag Method For Producing An Epitaxially Coated Semiconductor Wafer

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