WO2007062046A3 - Process for producing a silicon nitride compound - Google Patents

Process for producing a silicon nitride compound Download PDF

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Publication number
WO2007062046A3
WO2007062046A3 PCT/US2006/045074 US2006045074W WO2007062046A3 WO 2007062046 A3 WO2007062046 A3 WO 2007062046A3 US 2006045074 W US2006045074 W US 2006045074W WO 2007062046 A3 WO2007062046 A3 WO 2007062046A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
solution
yield
tetrafluoride
fluorosilicic
Prior art date
Application number
PCT/US2006/045074
Other languages
French (fr)
Other versions
WO2007062046A2 (en
Inventor
Declan Farrell
Santosh Y Limaye
Shanthi Subramanian
Original Assignee
Vesta Res Ltd
Declan Farrell
Santosh Y Limaye
Shanthi Subramanian
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vesta Res Ltd, Declan Farrell, Santosh Y Limaye, Shanthi Subramanian filed Critical Vesta Res Ltd
Priority to US12/094,991 priority Critical patent/US7541015B2/en
Priority to EP06844473A priority patent/EP1951620A2/en
Priority to AU2006318589A priority patent/AU2006318589A1/en
Publication of WO2007062046A2 publication Critical patent/WO2007062046A2/en
Publication of WO2007062046A3 publication Critical patent/WO2007062046A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0682—Preparation by direct nitridation of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0685—Preparation by carboreductive nitridation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

A process for producing a silicon nitride compound is presented. A starting solution comprising fluorosilicic acid is provided. The starting solution is derived from a silicon etching process wherein silicon is etched with a solution comprising hydrofluoric acid and where silicon powder has been removed. The starting solution is heated to yield a vapor solution comprising silicon tetrafluoride, hydrogen fluoride, and water. The hydrogen fluoride is separated from the vapor solution wherein a pure stream of silicon tetrafluoride and water vapor remain. The silicon tetrafluoride and water vapor are hydrolyzed to yield a concentrated flluorosilicic acid solution. The fluorosilicic acid is reacted with a base to yield a fluorosilicic salt. The fluorosilicic salt is heated to yield anhydrous silicon tetrafluoride. The anhydrous silicon tetrafluoride is reacted with a metal hydride to yield a monsilane. The monosilane is reacted to form a silicon compound and a silicon nitride compound. The silicon and the silicon nitride compounds are recovered. In an alternate embodiment, the hydrogen fluoride is recovered from the reaction process and reintroduced into the porous silicon etching process.
PCT/US2006/045074 2005-11-25 2006-11-21 Process for producing a silicon nitride compound WO2007062046A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/094,991 US7541015B2 (en) 2005-11-25 2006-11-21 Process for producing a silicon nitride compound
EP06844473A EP1951620A2 (en) 2005-11-25 2006-11-21 Process for producing a silicon nitride compound
AU2006318589A AU2006318589A1 (en) 2005-11-25 2006-11-21 Process for producing a silicon nitride compound

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73982505P 2005-11-25 2005-11-25
US60/739,825 2005-11-25

Publications (2)

Publication Number Publication Date
WO2007062046A2 WO2007062046A2 (en) 2007-05-31
WO2007062046A3 true WO2007062046A3 (en) 2008-08-21

Family

ID=38067863

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/045074 WO2007062046A2 (en) 2005-11-25 2006-11-21 Process for producing a silicon nitride compound

Country Status (5)

Country Link
US (1) US7541015B2 (en)
EP (1) EP1951620A2 (en)
AU (1) AU2006318589A1 (en)
WO (1) WO2007062046A2 (en)
ZA (1) ZA200804369B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111108176A (en) * 2017-09-06 2020-05-05 恩特格里斯公司 Compositions and methods for etching silicon nitride-containing substrates

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8529860B2 (en) * 2009-12-30 2013-09-10 Memc Electronics Materials, Inc. Methods for producing silicon tetrafluoride
KR101171799B1 (en) * 2010-06-29 2012-08-13 고려대학교 산학협력단 Method for recycling of silica etching waste and method for preparing mesoporous materials
WO2019235398A1 (en) * 2018-06-04 2019-12-12 東京エレクトロン株式会社 Etching process method and etching process device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866003A (en) * 1986-11-22 1989-09-12 Yamaha Corporation Plasma vapor deposition of an improved passivation film using electron cyclotron resonance
US4900530A (en) * 1986-07-23 1990-02-13 Enichem Agricoltura S.P.A. Process for the production of silicon tetrafluoride
US5470421A (en) * 1993-09-17 1995-11-28 Nisso Engineering Co., Ltd. Method for purification of etching solution

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US3257167A (en) 1961-10-02 1966-06-21 Stauffer Chemical Co Process for recovering strong hf from phosphate rock digestion processes
US4062930A (en) 1973-05-31 1977-12-13 Bohdan Zawadzki Method of production of anhydrous hydrogen fluoride
US4122155A (en) 1977-01-03 1978-10-24 General Electric Company Preparation of silicon nitride powder
JPS55113603A (en) 1979-02-19 1980-09-02 Toshiba Corp Manufacture of alpha silicon nitride powder
JPS5888110A (en) 1981-11-17 1983-05-26 Ube Ind Ltd Preparation of silicon nitride powder
US4597948A (en) 1982-12-27 1986-07-01 Sri International Apparatus for obtaining silicon from fluosilicic acid
US4590043A (en) 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
US5075092A (en) 1987-07-20 1991-12-24 Ethyl Corporation Process for preparation of silane
US4847061A (en) 1987-07-20 1989-07-11 Ethyl Corporation Process for preparation of silane
FI82231C (en) 1988-11-30 1991-02-11 Kemira Oy FOERFARANDE FOER FRAMSTAELLNING AV KERAMRAOMATERIAL.
FR2678602A1 (en) 1991-07-02 1993-01-08 Atochem PROCESS FOR THE PREPARATION OF SILICON NITRIDE BY SILICA CARBONITRURATION AND SILICON NITRIDE AS PARTICLES EXEMPT FROM WHISKEY.
DE4200085C2 (en) 1992-01-03 1997-04-17 Bayer Ag Process for the production of sinter-active Si¶3¶-N¶4¶ powders
FR2687393B1 (en) 1992-02-18 1994-04-15 Elf Atochem Sa CONTINUOUS PROCESS FOR THE PREPARATION OF SILICON NITRIDE BY CARBONITRURATION AND THE SILICON NITRIDE THUS OBTAINED.
US5876685A (en) 1996-09-11 1999-03-02 Ipec Clean, Inc. Separation and purification of fluoride from industrial wastes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4900530A (en) * 1986-07-23 1990-02-13 Enichem Agricoltura S.P.A. Process for the production of silicon tetrafluoride
US4866003A (en) * 1986-11-22 1989-09-12 Yamaha Corporation Plasma vapor deposition of an improved passivation film using electron cyclotron resonance
US5470421A (en) * 1993-09-17 1995-11-28 Nisso Engineering Co., Ltd. Method for purification of etching solution

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111108176A (en) * 2017-09-06 2020-05-05 恩特格里斯公司 Compositions and methods for etching silicon nitride-containing substrates
CN111108176B (en) * 2017-09-06 2021-10-08 恩特格里斯公司 Compositions and methods for etching silicon nitride-containing substrates

Also Published As

Publication number Publication date
US7541015B2 (en) 2009-06-02
EP1951620A2 (en) 2008-08-06
ZA200804369B (en) 2009-04-29
WO2007062046A2 (en) 2007-05-31
US20090022647A1 (en) 2009-01-22
AU2006318589A1 (en) 2007-05-31

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