JP2011003578A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011003578A
JP2011003578A JP2009143133A JP2009143133A JP2011003578A JP 2011003578 A JP2011003578 A JP 2011003578A JP 2009143133 A JP2009143133 A JP 2009143133A JP 2009143133 A JP2009143133 A JP 2009143133A JP 2011003578 A JP2011003578 A JP 2011003578A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
wiring layer
conductor
barrier conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009143133A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011003578A5 (https=
Inventor
Kenji Furusawa
健志 古澤
Takao Kamoshima
隆夫 鴨島
Hiromoto Takewaka
博基 竹若
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009143133A priority Critical patent/JP2011003578A/ja
Priority to TW099115842A priority patent/TW201115697A/zh
Priority to US12/794,739 priority patent/US20100314620A1/en
Priority to CN2010102052854A priority patent/CN101924089A/zh
Publication of JP2011003578A publication Critical patent/JP2011003578A/ja
Publication of JP2011003578A5 publication Critical patent/JP2011003578A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP2009143133A 2009-06-16 2009-06-16 半導体装置 Pending JP2011003578A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009143133A JP2011003578A (ja) 2009-06-16 2009-06-16 半導体装置
TW099115842A TW201115697A (en) 2009-06-16 2010-05-18 Semiconductor device
US12/794,739 US20100314620A1 (en) 2009-06-16 2010-06-05 Semiconductor device
CN2010102052854A CN101924089A (zh) 2009-06-16 2010-06-13 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009143133A JP2011003578A (ja) 2009-06-16 2009-06-16 半導体装置

Publications (2)

Publication Number Publication Date
JP2011003578A true JP2011003578A (ja) 2011-01-06
JP2011003578A5 JP2011003578A5 (https=) 2012-04-26

Family

ID=43305653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009143133A Pending JP2011003578A (ja) 2009-06-16 2009-06-16 半導体装置

Country Status (4)

Country Link
US (1) US20100314620A1 (https=)
JP (1) JP2011003578A (https=)
CN (1) CN101924089A (https=)
TW (1) TW201115697A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014146785A (ja) * 2013-01-07 2014-08-14 Denso Corp 半導体装置
JP2016174089A (ja) * 2015-03-17 2016-09-29 セイコーエプソン株式会社 半導体装置
JP2018006385A (ja) * 2016-06-27 2018-01-11 ルネサスエレクトロニクス株式会社 半導体装置
KR20180118604A (ko) * 2016-02-23 2018-10-31 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2020061580A (ja) * 2020-01-16 2020-04-16 ルネサスエレクトロニクス株式会社 半導体装置
WO2024042698A1 (ja) * 2022-08-26 2024-02-29 株式会社ソシオネクスト 半導体集積回路装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8603909B2 (en) * 2009-11-05 2013-12-10 Globalfoundries Singapore Pte. Ltd. Integrated circuit packaging system with core region and bond pad and method of manufacture thereof
JP2016004877A (ja) * 2014-06-16 2016-01-12 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
US9620460B2 (en) 2014-07-02 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor chip, semiconductor package and fabricating method thereof
JP2016139711A (ja) * 2015-01-28 2016-08-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2018137344A (ja) * 2017-02-22 2018-08-30 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
KR102576062B1 (ko) * 2018-11-07 2023-09-07 삼성전자주식회사 관통 실리콘 비아를 포함하는 반도체 소자 및 그 제조 방법
KR102807501B1 (ko) * 2019-10-02 2025-05-16 삼성전자주식회사 두꺼운 금속층을 갖는 반도체 소자들

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007004295A1 (ja) * 2005-07-05 2007-01-11 Fujitsu Limited 半導体装置及びその製造方法
JP2009076808A (ja) * 2007-09-25 2009-04-09 Panasonic Corp 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727593B2 (en) * 2001-03-01 2004-04-27 Kabushiki Kaisha Toshiba Semiconductor device with improved bonding
JP2003031575A (ja) * 2001-07-17 2003-01-31 Nec Corp 半導体装置及びその製造方法
JP2003218114A (ja) * 2002-01-22 2003-07-31 Toshiba Corp 半導体装置及びその製造方法
US7319277B2 (en) * 2003-05-08 2008-01-15 Megica Corporation Chip structure with redistribution traces
JP4639138B2 (ja) * 2005-10-28 2011-02-23 パナソニック株式会社 半導体装置
JP2009021528A (ja) * 2007-07-13 2009-01-29 Toshiba Corp 半導体装置
JP5205066B2 (ja) * 2008-01-18 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5443827B2 (ja) * 2009-05-20 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007004295A1 (ja) * 2005-07-05 2007-01-11 Fujitsu Limited 半導体装置及びその製造方法
JP2009076808A (ja) * 2007-09-25 2009-04-09 Panasonic Corp 半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014146785A (ja) * 2013-01-07 2014-08-14 Denso Corp 半導体装置
JP2016174089A (ja) * 2015-03-17 2016-09-29 セイコーエプソン株式会社 半導体装置
KR20180118604A (ko) * 2016-02-23 2018-10-31 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
KR102482774B1 (ko) * 2016-02-23 2023-01-02 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2018006385A (ja) * 2016-06-27 2018-01-11 ルネサスエレクトロニクス株式会社 半導体装置
JP2020061580A (ja) * 2020-01-16 2020-04-16 ルネサスエレクトロニクス株式会社 半導体装置
WO2024042698A1 (ja) * 2022-08-26 2024-02-29 株式会社ソシオネクスト 半導体集積回路装置

Also Published As

Publication number Publication date
TW201115697A (en) 2011-05-01
US20100314620A1 (en) 2010-12-16
CN101924089A (zh) 2010-12-22

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