CN101924089A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101924089A
CN101924089A CN2010102052854A CN201010205285A CN101924089A CN 101924089 A CN101924089 A CN 101924089A CN 2010102052854 A CN2010102052854 A CN 2010102052854A CN 201010205285 A CN201010205285 A CN 201010205285A CN 101924089 A CN101924089 A CN 101924089A
Authority
CN
China
Prior art keywords
film
barrier conductor
conductor
wiring layer
conductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010102052854A
Other languages
English (en)
Chinese (zh)
Inventor
古泽健志
鸭岛隆夫
竹若博基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN101924089A publication Critical patent/CN101924089A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
CN2010102052854A 2009-06-16 2010-06-13 半导体器件 Pending CN101924089A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009143133A JP2011003578A (ja) 2009-06-16 2009-06-16 半導体装置
JP2009-143133 2009-06-16

Publications (1)

Publication Number Publication Date
CN101924089A true CN101924089A (zh) 2010-12-22

Family

ID=43305653

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010102052854A Pending CN101924089A (zh) 2009-06-16 2010-06-13 半导体器件

Country Status (4)

Country Link
US (1) US20100314620A1 (https=)
JP (1) JP2011003578A (https=)
CN (1) CN101924089A (https=)
TW (1) TW201115697A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103915399A (zh) * 2013-01-07 2014-07-09 株式会社电装 半导体器件
CN105322001A (zh) * 2014-06-16 2016-02-10 瑞萨电子株式会社 半导体器件和电子设备
CN108140577A (zh) * 2016-02-23 2018-06-08 瑞萨电子株式会社 半导体器件及其制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8603909B2 (en) * 2009-11-05 2013-12-10 Globalfoundries Singapore Pte. Ltd. Integrated circuit packaging system with core region and bond pad and method of manufacture thereof
US9620460B2 (en) 2014-07-02 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor chip, semiconductor package and fabricating method thereof
JP2016139711A (ja) * 2015-01-28 2016-08-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6524730B2 (ja) * 2015-03-17 2019-06-05 セイコーエプソン株式会社 半導体装置
JP6649189B2 (ja) * 2016-06-27 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
JP2018137344A (ja) * 2017-02-22 2018-08-30 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
KR102576062B1 (ko) * 2018-11-07 2023-09-07 삼성전자주식회사 관통 실리콘 비아를 포함하는 반도체 소자 및 그 제조 방법
KR102807501B1 (ko) * 2019-10-02 2025-05-16 삼성전자주식회사 두꺼운 금속층을 갖는 반도체 소자들
JP2020061580A (ja) * 2020-01-16 2020-04-16 ルネサスエレクトロニクス株式会社 半導体装置
WO2024042698A1 (ja) * 2022-08-26 2024-02-29 株式会社ソシオネクスト 半導体集積回路装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1434510A (zh) * 2002-01-22 2003-08-06 株式会社东芝 半导体器件及其制造方法
JP2009021528A (ja) * 2007-07-13 2009-01-29 Toshiba Corp 半導体装置
US20090078935A1 (en) * 2007-09-25 2009-03-26 Masao Takahashi Semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727593B2 (en) * 2001-03-01 2004-04-27 Kabushiki Kaisha Toshiba Semiconductor device with improved bonding
JP2003031575A (ja) * 2001-07-17 2003-01-31 Nec Corp 半導体装置及びその製造方法
US7319277B2 (en) * 2003-05-08 2008-01-15 Megica Corporation Chip structure with redistribution traces
JP4998262B2 (ja) * 2005-07-05 2012-08-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP4639138B2 (ja) * 2005-10-28 2011-02-23 パナソニック株式会社 半導体装置
JP5205066B2 (ja) * 2008-01-18 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5443827B2 (ja) * 2009-05-20 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1434510A (zh) * 2002-01-22 2003-08-06 株式会社东芝 半导体器件及其制造方法
JP2009021528A (ja) * 2007-07-13 2009-01-29 Toshiba Corp 半導体装置
US20090078935A1 (en) * 2007-09-25 2009-03-26 Masao Takahashi Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103915399A (zh) * 2013-01-07 2014-07-09 株式会社电装 半导体器件
CN103915399B (zh) * 2013-01-07 2017-10-17 株式会社电装 半导体器件
CN105322001A (zh) * 2014-06-16 2016-02-10 瑞萨电子株式会社 半导体器件和电子设备
CN108140577A (zh) * 2016-02-23 2018-06-08 瑞萨电子株式会社 半导体器件及其制造方法

Also Published As

Publication number Publication date
TW201115697A (en) 2011-05-01
US20100314620A1 (en) 2010-12-16
JP2011003578A (ja) 2011-01-06

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20101222