JP2010530628A - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
- Publication number
- JP2010530628A JP2010530628A JP2010512725A JP2010512725A JP2010530628A JP 2010530628 A JP2010530628 A JP 2010530628A JP 2010512725 A JP2010512725 A JP 2010512725A JP 2010512725 A JP2010512725 A JP 2010512725A JP 2010530628 A JP2010530628 A JP 2010530628A
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- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000605 extraction Methods 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】第一の導電型の下部電流分配層(5)と、第一の電極(2)と、後二つは互いに水平分離されて下部電流分配層上に形成された垂直層構造(5、6、7)であって、活性層(6)及び活性層の上部の第二の導電型の上部電流分配層(8)を含む垂直層構造と、上部電流分配層上に形成された第二の電極(3)と、を含む、電気的絶縁基板(4)上に成長させたLEDチップ(1)であって、電極の配置は、電極間の水平距離をチップの電流広がり長さよりも小さくするように調節される。本発明によれば、垂直トレンチ(9)が電極(2、3)間に形成され、該トレンチは、活性層(6)にわたり均一な電流密度を達成する目的で水平電流の流れを制御するために、チップ(1)を通じて延びる下部電流分配層(5)を備える。
【選択図】図3
Description
Claims (3)
- 電気的絶縁基板(4)上に成長させたLEDチップ(1)であって、前記LEDチップは、第一の導電型の下部電流分配層(5)と、第一の電極(2)と、後二つは互いに水平分離されて前記下部電流分配層上に形成された垂直層構造(5、6、7)であって、活性層(6)及び前記活性層の上部の第二の導電型の上部電流分配層(8)を含む垂直層構造と、前記上部電流分配層上に形成された第二の電極(3)と、を含み、前記電極の配置は、前記電極間の水平距離を前記チップの電流広がり長さよりも小さくするように調節され、垂直トレンチ(9)が前記電極(2、3)間に形成され、
前記トレンチは、前記活性層(6)にわたり均一な電流密度を達成するために水平電流の流れを制御するよう前記下部電流分配層(5)を含む前記チップ(1)を通じて延びることを特徴とする、LEDチップ。 - 前記電極(2、3)間に追加の垂直トレンチ(11)が形成され、前記追加のトレンチは、前記電流分配層(5、8)における前記水平電流の流れの方向に沿い、前記活性層(6)を含めて前記チップ(1)を通じて延び、前記垂直層構造(5、6、7)の全体の周辺を増すことにより前記チップからの光抽出を増強することを特徴とする請求項1に記載のLEDチップ。
- 前記垂直層構造(5、6、7)の側壁(12)は、前記チップ(1)からの光抽出を容易にするために、垂直方向から傾けられることを特徴とする、請求項1又は2に記載のLEDチップ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20070496A FI121902B (fi) | 2007-06-20 | 2007-06-20 | Valoa säteilevä diodi |
PCT/FI2008/050338 WO2008155452A1 (en) | 2007-06-20 | 2008-06-09 | Light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010530628A true JP2010530628A (ja) | 2010-09-09 |
Family
ID=38212350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010512725A Pending JP2010530628A (ja) | 2007-06-20 | 2008-06-09 | 発光ダイオード |
Country Status (10)
Country | Link |
---|---|
US (1) | US8198648B2 (ja) |
EP (1) | EP2165375A1 (ja) |
JP (1) | JP2010530628A (ja) |
KR (1) | KR20100050464A (ja) |
CN (1) | CN101681971B (ja) |
FI (1) | FI121902B (ja) |
HK (1) | HK1142461A1 (ja) |
RU (1) | RU2462791C2 (ja) |
TW (1) | TW200908396A (ja) |
WO (1) | WO2008155452A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012011458A1 (ja) * | 2010-07-23 | 2012-01-26 | 日亜化学工業株式会社 | 発光素子 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI527260B (zh) * | 2008-11-19 | 2016-03-21 | 廣鎵光電股份有限公司 | 發光元件結構及其半導體晶圓結構 |
KR101093120B1 (ko) * | 2009-11-16 | 2011-12-13 | 서울옵토디바이스주식회사 | 전류분산을 위한 전극 연장부들을 갖는 발광 다이오드 |
KR101625125B1 (ko) * | 2009-12-29 | 2016-05-27 | 서울바이오시스 주식회사 | 전극 연장부들을 갖는 발광 다이오드 |
US8975658B2 (en) * | 2010-08-10 | 2015-03-10 | Koninklijke Philips N.V. | Shunting layer arrangement for LEDs |
USD709840S1 (en) * | 2012-10-03 | 2014-07-29 | Epistar Corporation | Light-emitting diode |
TW201511362A (zh) * | 2013-09-09 | 2015-03-16 | Lextar Electronics Corp | 發光二極體晶片 |
USD719112S1 (en) | 2013-11-22 | 2014-12-09 | Epistar Corporation | Light-emitting diode device |
KR102182024B1 (ko) * | 2014-07-01 | 2020-11-23 | 엘지이노텍 주식회사 | 발광 소자 |
KR20160025455A (ko) | 2014-08-27 | 2016-03-08 | 서울바이오시스 주식회사 | 발광 소자 및 이의 제조 방법 |
WO2016032193A1 (ko) * | 2014-08-27 | 2016-03-03 | 서울바이오시스 주식회사 | 발광 소자 및 이의 제조 방법 |
CN111048639B (zh) * | 2019-01-31 | 2022-06-24 | 深圳第三代半导体研究院 | 一种正装集成单元发光二极管 |
CN111863853A (zh) * | 2019-04-24 | 2020-10-30 | 深圳第三代半导体研究院 | 一种垂直集成单元二极管芯片 |
CN111863802A (zh) * | 2019-04-24 | 2020-10-30 | 深圳第三代半导体研究院 | 一种垂直集成单元二极管芯片 |
CN111933768B (zh) * | 2019-04-25 | 2022-05-06 | 深圳第三代半导体研究院 | 一种垂直集成单元二极管芯片 |
CN113036009B (zh) * | 2019-12-25 | 2022-07-05 | 深圳第三代半导体研究院 | 一种薄膜垂直集成单元二极管芯片 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002016282A (ja) * | 2000-06-28 | 2002-01-18 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2003524295A (ja) * | 1999-12-01 | 2003-08-12 | クリー・ライティング・カンパニー | 改良された電流拡散構造を有するスケーラブルled |
JP2007123764A (ja) * | 2005-10-31 | 2007-05-17 | Stanley Electric Co Ltd | 発光素子及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
US6307218B1 (en) | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
US7102158B2 (en) * | 2000-10-23 | 2006-09-05 | General Electric Company | Light-based system for detecting analytes |
JP4616491B2 (ja) | 2001-03-21 | 2011-01-19 | 星和電機株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US6618418B2 (en) * | 2001-11-15 | 2003-09-09 | Xerox Corporation | Dual III-V nitride laser structure with reduced thermal cross-talk |
TW516248B (en) * | 2001-12-21 | 2003-01-01 | Epitech Technology Corp | Nitride light emitting diode with spiral-shaped metal electrode |
US6828596B2 (en) | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
US6958498B2 (en) * | 2002-09-27 | 2005-10-25 | Emcore Corporation | Optimized contact design for flip-chip LED |
TWI222756B (en) | 2002-11-12 | 2004-10-21 | Epitech Corp Ltd | Lateral current blocking light emitting diode and method of making the same |
RU2231171C1 (ru) * | 2003-04-30 | 2004-06-20 | Закрытое акционерное общество "Инновационная фирма "ТЕТИС" | Светоизлучающий диод |
US20050133806A1 (en) | 2003-12-17 | 2005-06-23 | Hui Peng | P and N contact pad layout designs of GaN based LEDs for flip chip packaging |
US7285801B2 (en) * | 2004-04-02 | 2007-10-23 | Lumination, Llc | LED with series-connected monolithically integrated mesas |
JP2006086516A (ja) | 2004-08-20 | 2006-03-30 | Showa Denko Kk | 半導体発光素子の製造方法 |
TWI246210B (en) * | 2005-04-28 | 2005-12-21 | Epitech Corp Ltd | Lateral current blocking light emitting diode and method for manufacturing the same |
US20060267043A1 (en) * | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
-
2007
- 2007-06-20 FI FI20070496A patent/FI121902B/fi not_active IP Right Cessation
-
2008
- 2008-06-09 US US12/667,330 patent/US8198648B2/en not_active Expired - Fee Related
- 2008-06-09 EP EP08775463A patent/EP2165375A1/en not_active Withdrawn
- 2008-06-09 JP JP2010512725A patent/JP2010530628A/ja active Pending
- 2008-06-09 KR KR1020107001289A patent/KR20100050464A/ko not_active Application Discontinuation
- 2008-06-09 CN CN2008800205288A patent/CN101681971B/zh not_active Expired - Fee Related
- 2008-06-09 WO PCT/FI2008/050338 patent/WO2008155452A1/en active Application Filing
- 2008-06-09 RU RU2010101276/28A patent/RU2462791C2/ru not_active IP Right Cessation
- 2008-06-20 TW TW097122991A patent/TW200908396A/zh unknown
-
2010
- 2010-09-17 HK HK10108887.7A patent/HK1142461A1/xx not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003524295A (ja) * | 1999-12-01 | 2003-08-12 | クリー・ライティング・カンパニー | 改良された電流拡散構造を有するスケーラブルled |
JP2002016282A (ja) * | 2000-06-28 | 2002-01-18 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2007123764A (ja) * | 2005-10-31 | 2007-05-17 | Stanley Electric Co Ltd | 発光素子及びその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012011458A1 (ja) * | 2010-07-23 | 2012-01-26 | 日亜化学工業株式会社 | 発光素子 |
JP5170325B2 (ja) * | 2010-07-23 | 2013-03-27 | 日亜化学工業株式会社 | 発光素子 |
US8466487B2 (en) | 2010-07-23 | 2013-06-18 | Nichia Corporation | Light emitting element with extended electrodes structure |
Also Published As
Publication number | Publication date |
---|---|
FI20070496A0 (fi) | 2007-06-20 |
WO2008155452A1 (en) | 2008-12-24 |
US20100163910A1 (en) | 2010-07-01 |
EP2165375A1 (en) | 2010-03-24 |
RU2010101276A (ru) | 2011-07-27 |
KR20100050464A (ko) | 2010-05-13 |
FI121902B (fi) | 2011-05-31 |
HK1142461A1 (en) | 2010-12-03 |
TW200908396A (en) | 2009-02-16 |
CN101681971A (zh) | 2010-03-24 |
US8198648B2 (en) | 2012-06-12 |
CN101681971B (zh) | 2012-09-19 |
RU2462791C2 (ru) | 2012-09-27 |
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