JP2010530474A5 - - Google Patents
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- Publication number
- JP2010530474A5 JP2010530474A5 JP2009553506A JP2009553506A JP2010530474A5 JP 2010530474 A5 JP2010530474 A5 JP 2010530474A5 JP 2009553506 A JP2009553506 A JP 2009553506A JP 2009553506 A JP2009553506 A JP 2009553506A JP 2010530474 A5 JP2010530474 A5 JP 2010530474A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- iii
- thin film
- precursor
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000002243 precursor Substances 0.000 claims 34
- 239000010409 thin film Substances 0.000 claims 27
- 229910052751 metal Inorganic materials 0.000 claims 24
- 239000002184 metal Substances 0.000 claims 24
- 150000001875 compounds Chemical class 0.000 claims 23
- 238000000034 method Methods 0.000 claims 21
- 238000005229 chemical vapour deposition Methods 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 19
- 229910021476 group 6 element Inorganic materials 0.000 claims 15
- 229910052798 chalcogen Inorganic materials 0.000 claims 9
- 150000001787 chalcogens Chemical class 0.000 claims 9
- 229910052711 selenium Inorganic materials 0.000 claims 9
- 229910052717 sulfur Inorganic materials 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 8
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 7
- 229910052733 gallium Inorganic materials 0.000 claims 6
- 229910052738 indium Inorganic materials 0.000 claims 6
- 229910052714 tellurium Inorganic materials 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- 125000002524 organometallic group Chemical group 0.000 claims 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 3
- 238000007740 vapor deposition Methods 0.000 claims 2
- 238000005019 vapor deposition process Methods 0.000 claims 2
- PKXHXOTZMFCXSH-UHFFFAOYSA-N 3,3-dimethylbut-1-ene Chemical compound CC(C)(C)C=C PKXHXOTZMFCXSH-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070024682A KR100857227B1 (ko) | 2007-03-13 | 2007-03-13 | 단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법 |
| PCT/KR2008/001041 WO2008111738A1 (en) | 2007-03-13 | 2008-02-22 | Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010530474A JP2010530474A (ja) | 2010-09-09 |
| JP2010530474A5 true JP2010530474A5 (cg-RX-API-DMAC7.html) | 2010-10-21 |
Family
ID=39759657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009553506A Ceased JP2010530474A (ja) | 2007-03-13 | 2008-02-22 | 単一の有機金属化学気相蒸着工程によるｉ−ｉｉｉ−ｖｉ２化合物薄膜の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100098856A1 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2126964A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2010530474A (cg-RX-API-DMAC7.html) |
| KR (1) | KR100857227B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN101632154B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2008111738A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100982475B1 (ko) * | 2008-09-29 | 2010-09-15 | 주식회사 쎄믹스 | 광 흡수용 화합물 박막 제조방법 |
| TWI373851B (en) * | 2008-11-25 | 2012-10-01 | Nexpower Technology Corp | Stacked-layered thin film solar cell and manufacturing method thereof |
| KR101071545B1 (ko) * | 2008-12-30 | 2011-10-11 | 주식회사 메카로닉스 | Ｃｉｇｓ 박막 제조방법 |
| JP5261581B2 (ja) * | 2010-01-29 | 2013-08-14 | 京セラ株式会社 | 半導体層の製造方法、光電変換装置の製造方法および半導体層形成用溶液 |
| CN102634776B (zh) * | 2012-05-03 | 2014-03-12 | 徐明生 | 一种连续制备二维纳米薄膜的化学气相沉积设备 |
| KR102090184B1 (ko) * | 2016-01-13 | 2020-03-18 | 주식회사 메카로에너지 | Cigs 광흡수층을 포함하는 태양전지 및 이의 제조방법 |
| JP6842035B2 (ja) * | 2016-12-19 | 2021-03-17 | 富士通株式会社 | 層状カルコゲナイド膜の形成方法及び半導体装置の製造方法 |
| JP7070826B2 (ja) * | 2017-02-28 | 2022-05-18 | 国立大学法人東海国立大学機構 | 半導体ナノ粒子およびその製造方法ならびに発光デバイス |
| KR20250030522A (ko) * | 2017-02-28 | 2025-03-05 | 고쿠리츠 다이가쿠 호우징 도우카이 고쿠리츠 다이가쿠 기코우 | 반도체 나노 입자 및 그 제조 방법 및 발광 디바이스 |
| US20200082995A1 (en) * | 2018-09-06 | 2020-03-12 | Ascent Solar Technologies, Inc. | Chalcopyrite-perovskite pn-junction thin-film photovoltaic device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000144014A (ja) * | 1998-11-06 | 2000-05-26 | Asahi Chem Ind Co Ltd | 化合物半導体薄膜の形成方法 |
| US6992202B1 (en) * | 2002-10-31 | 2006-01-31 | Ohio Aerospace Institute | Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same |
| EP1649520A4 (en) * | 2003-07-26 | 2009-03-11 | In Solar Tech Co Ltd | PROCESS FOR PREPARING ABSORBENT LAYERS FOR A SOLAR CELL |
| KR100495924B1 (ko) * | 2003-07-26 | 2005-06-16 | (주)인솔라텍 | 태양전지 흡수층의 제조 방법 |
| KR100495925B1 (ko) * | 2005-01-12 | 2005-06-17 | (주)인솔라텍 | 태양전지용 광흡수층 및 그 제조 방법 |
| KR100810730B1 (ko) * | 2006-06-19 | 2008-03-07 | (주)인솔라텍 | 태양전지용 광흡수층의 제조방법 |
-
2007
- 2007-03-13 KR KR1020070024682A patent/KR100857227B1/ko not_active Expired - Fee Related
-
2008
- 2008-02-22 CN CN2008800076821A patent/CN101632154B/zh not_active Expired - Fee Related
- 2008-02-22 US US12/530,881 patent/US20100098856A1/en not_active Abandoned
- 2008-02-22 JP JP2009553506A patent/JP2010530474A/ja not_active Ceased
- 2008-02-22 WO PCT/KR2008/001041 patent/WO2008111738A1/en not_active Ceased
- 2008-02-22 EP EP08723079A patent/EP2126964A1/en not_active Withdrawn
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