JP2010530474A - 単一の有機金属化学気相蒸着工程によるｉ−ｉｉｉ−ｖｉ２化合物薄膜の製造方法 - Google Patents

単一の有機金属化学気相蒸着工程によるｉ−ｉｉｉ−ｖｉ２化合物薄膜の製造方法 Download PDF

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JP2010530474A
JP2010530474A JP2009553506A JP2009553506A JP2010530474A JP 2010530474 A JP2010530474 A JP 2010530474A JP 2009553506 A JP2009553506 A JP 2009553506A JP 2009553506 A JP2009553506 A JP 2009553506A JP 2010530474 A JP2010530474 A JP 2010530474A
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thin film
precursor
vapor deposition
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JP2010530474A5 (cg-RX-API-DMAC7.html
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チョイ、イン−ワン
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イン−ソーラー−テック カンパニー，リミテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP2009553506A 2007-03-13 2008-02-22 単一の有機金属化学気相蒸着工程によるｉ−ｉｉｉ−ｖｉ２化合物薄膜の製造方法 Ceased JP2010530474A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070024682A KR100857227B1 (ko) 2007-03-13 2007-03-13 단일 유기금속 화학기상 증착 공정에 의한 ⅰ-ⅲ-ⅵ2화합물 박막의 제조방법
PCT/KR2008/001041 WO2008111738A1 (en) 2007-03-13 2008-02-22 Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process

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JP2010530474A true JP2010530474A (ja) 2010-09-09
JP2010530474A5 JP2010530474A5 (cg-RX-API-DMAC7.html) 2010-10-21

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JP2009553506A Ceased JP2010530474A (ja) 2007-03-13 2008-02-22 単一の有機金属化学気相蒸着工程によるｉ−ｉｉｉ−ｖｉ２化合物薄膜の製造方法

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US (1) US20100098856A1 (cg-RX-API-DMAC7.html)
EP (1) EP2126964A1 (cg-RX-API-DMAC7.html)
JP (1) JP2010530474A (cg-RX-API-DMAC7.html)
KR (1) KR100857227B1 (cg-RX-API-DMAC7.html)
CN (1) CN101632154B (cg-RX-API-DMAC7.html)
WO (1) WO2008111738A1 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018100429A (ja) * 2016-12-19 2018-06-28 富士通株式会社 層状カルコゲナイド膜の形成方法及び半導体装置の製造方法
JP2019502265A (ja) * 2016-01-13 2019-01-24 メカロ カンパニー リミテッドＭｅｃａｒｏ Ｃｏ．，Ｌｔｄ． Ｃｉｇｓ光吸収層を含む太陽電池及びその製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100982475B1 (ko) * 2008-09-29 2010-09-15 주식회사 쎄믹스 광 흡수용 화합물 박막 제조방법
TWI373851B (en) * 2008-11-25 2012-10-01 Nexpower Technology Corp Stacked-layered thin film solar cell and manufacturing method thereof
KR101071545B1 (ko) * 2008-12-30 2011-10-11 주식회사 메카로닉스 Ｃｉｇｓ 박막 제조방법
JP5261581B2 (ja) * 2010-01-29 2013-08-14 京セラ株式会社 半導体層の製造方法、光電変換装置の製造方法および半導体層形成用溶液
CN102634776B (zh) * 2012-05-03 2014-03-12 徐明生 一种连续制备二维纳米薄膜的化学气相沉积设备
JP7070826B2 (ja) * 2017-02-28 2022-05-18 国立大学法人東海国立大学機構 半導体ナノ粒子およびその製造方法ならびに発光デバイス
KR20250030522A (ko) * 2017-02-28 2025-03-05 고쿠리츠 다이가쿠 호우징 도우카이 고쿠리츠 다이가쿠 기코우 반도체 나노 입자 및 그 제조 방법 및 발광 디바이스
US20200082995A1 (en) * 2018-09-06 2020-03-12 Ascent Solar Technologies, Inc. Chalcopyrite-perovskite pn-junction thin-film photovoltaic device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144014A (ja) * 1998-11-06 2000-05-26 Asahi Chem Ind Co Ltd 化合物半導体薄膜の形成方法
US6992202B1 (en) * 2002-10-31 2006-01-31 Ohio Aerospace Institute Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same
JP2006528838A (ja) * 2003-07-26 2006-12-21 イン−ソーラー−テック カンパニー，リミテッド 太陽電池吸収層の製造方法
JP2008527735A (ja) * 2005-01-12 2008-07-24 イン−ソーラー テク カンパニー リミテッド 太陽電池用光吸収層及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100495924B1 (ko) * 2003-07-26 2005-06-16 (주)인솔라텍 태양전지 흡수층의 제조 방법
KR100810730B1 (ko) * 2006-06-19 2008-03-07 (주)인솔라텍 태양전지용 광흡수층의 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000144014A (ja) * 1998-11-06 2000-05-26 Asahi Chem Ind Co Ltd 化合物半導体薄膜の形成方法
US6992202B1 (en) * 2002-10-31 2006-01-31 Ohio Aerospace Institute Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same
JP2006528838A (ja) * 2003-07-26 2006-12-21 イン−ソーラー−テック カンパニー，リミテッド 太陽電池吸収層の製造方法
JP2008527735A (ja) * 2005-01-12 2008-07-24 イン−ソーラー テク カンパニー リミテッド 太陽電池用光吸収層及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019502265A (ja) * 2016-01-13 2019-01-24 メカロ カンパニー リミテッドＭｅｃａｒｏ Ｃｏ．，Ｌｔｄ． Ｃｉｇｓ光吸収層を含む太陽電池及びその製造方法
JP2018100429A (ja) * 2016-12-19 2018-06-28 富士通株式会社 層状カルコゲナイド膜の形成方法及び半導体装置の製造方法

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WO2008111738A1 (en) 2008-09-18
US20100098856A1 (en) 2010-04-22
CN101632154B (zh) 2011-11-02
EP2126964A1 (en) 2009-12-02
KR100857227B1 (ko) 2008-09-05
CN101632154A (zh) 2010-01-20

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