JP2008527735A - 太陽電池用光吸収層及びその製造方法 - Google Patents
太陽電池用光吸収層及びその製造方法 Download PDFInfo
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Abstract
Description
本発明は、太陽電池用光吸収層及びその製造方法に関するもので、より詳細には、MOCVD方法を使用して化学当量比に近い造成比を有するCuInSe2、CuGaSe2及びCuIn1-xGaXSe2薄膜を多層に積層して太陽光の吸収能力を向上させることのできる、太陽電池用光吸収層及びその製造方法に関するものである。
CuInSe2(以下、“CIS”という)またはCuIn1−xGaxSe2(以下、“CIGS”という)の三元系薄膜は、最近活発に研究されている化合物半導体のうちの一つである。
〔技術的課題〕
本発明は、前記のような従来の技術的問題点を解決するために案出されたもので、多原子系薄膜であるCIS系化合物薄膜たちの上部層と下部層の間の境界面で原子たちの拡散がほとんどないCIS系多層薄膜の太陽電池用光吸収層及びその製造方法を提供するためのものである。
本発明の一実施例による太陽電池用光吸収層の製造方法は、基板上に、III族(以下、BまたはCと表示し、BはCより原子番号が大きなもの)元素B及びVI族元素(以下、Xと表示する)を含む単一前駆体を利用した有機金属化学気相蒸着法によってBX構造式の化合物薄膜を蒸着する第1段階;前記BX構造式の化合物薄膜に、I族金属元素(以下、Aと表示する)を含む前駆体を供給する有機金属化学気相蒸着法によってA2X構造式の化合物薄膜を形成する第2段階;前記A2X構造式の化合物薄膜上に、III族元素C及びVI族元素Xを含む単一前駆体を利用した有機金属化学気相蒸着法によってACX2構造式の化合物薄膜を蒸着する第3段階;及び前記ACX2構造式の化合物薄膜上に、前記III族元素B及びVI族元素Xを含む単一前駆体を利用した有機金属化学気相蒸着法によってABX2構造式の化合物薄膜を蒸着してACX2/ABX2構造式の多層薄膜を形成する第4段階とを含むことを特徴とする。この時、前記第2段階で蒸着されたA2X構造式の化合物薄膜で、I族元素Aは適正化学当量比より過多含有されるようにし、第4段階でABX2構造式の化合物薄膜を蒸着する時に補充され得るようにする。
以下、添付の図面を参照して、本発明による好ましい実施例の太陽電池用光吸収層の製造方法を説明する。本実施例は、本発明の権利範囲を限定するものでなく、単に例示のために提示されたものである。
このように、本発明によると多原子系薄膜であるI−III−VI2族化合物半導体薄膜たちの上部層と下部層の間の境界面で原子たちの拡散がほとんどないI−III−VI2族化合物半導体の多層薄膜を得ることができ、これによって太陽光の吸収能力をより向上させることができるようになる。
Claims (20)
- 基板上に、III族(以下、BまたはCと表示し、BはCより原子番号が大きなもの)元素B及びVI族元素(以下、Xと表示する)を含む単一前駆体を利用した有機金属化学気相蒸着法によってBX構造式の化合物薄膜を蒸着する第1段階;
前記BX構造式の化合物薄膜に、I族金属元素(以下、Aと表示する)を含む前駆体を供給する有機金属化学気相蒸着法によってA2X構造式の化合物薄膜を形成する第2段階;
前記A2X構造式の化合物薄膜上に、III族元素C及びVI族元素Xを含む単一前駆体を利用した有機金属化学気相蒸着法によってACX2構造式の化合物薄膜を蒸着する第3段階;及び
前記ACX2構造式の化合物薄膜上に、前記III族元素B及びVI族元素Xを含む単一前駆体を利用した有機金属化学気相蒸着法によってABX2構造式の化合物薄膜を蒸着してACX2/ABX2構造式の多層薄膜を形成する第4段階とを含むことを特徴とする太陽電池用光吸収層の製造方法。 - 前記第2段階で蒸着されたA2X構造式の化合物薄膜で、I族元素Aは適正化学当量比より過多含有されていることを特徴とする請求項1に記載の太陽電池用光吸収層の製造方法。
- 前記第4段階のACX2/ABX2構造式の多層薄膜上に、I族金属元素Aを含む前駆体を供給してI族金属元素Aを補充した後、前記III族元素B及びVI族元素Xを含む単一前駆体を利用した有機金属化学気相蒸着法によってACX2/ABX2構造式の多層薄膜を形成する第5段階を更に含むことを特徴とする請求項1に記載の太陽電池用光吸収層の製造方法。
- 前記第5段階のACX2/ABX2構造式の多層薄膜上に、III族元素C及びVI族元素Xを含む単一前駆体を利用した有機金属化学気相蒸着法によってACX2/A(B、C)X2構造式の多層薄膜を形成する第6段階を更に含むことを特徴とする請求項3に記載の太陽電池用光吸収層の製造方法。
- 前記第6段階のACX2/A(B、C)X2構造式の化合物多層薄膜上に、I族金属元素Aを含む前駆体を供給して多層薄膜にI族金属を補充した後、前記III族元素B及びVI族元素Xを含む単一前駆体を利用した有機金属化学気相蒸着法によってABX2構造式の化合物薄膜を蒸着し、ACX2/A(B、C)X2/ABX2構造式の多層薄膜を形成する第7段階を更に含むことを特徴とする請求項4に記載の太陽電池用光吸収層の製造方法。
- 前記第2段階で蒸着されたA2X構造式の化合物薄膜で、I族元素Aは適正化学当量比に合っていることを特徴とする請求項3乃至5のいずれかに記載の太陽電池用光吸収層の製造方法。
- 前記I族元素Aは銅(Cu)、前記III元素Bはインジウム(In)、前記III族元素Cはガリウム(Ga)またはアルミニウム(Al)、前記VI族元素Xはセレニウム(Se)であることを特徴とする請求項1乃至5のいずれかに記載の太陽電池用光吸収層の製造方法。
- 基板上に、III族元素(以下、Bと表示する)及びVI族元素(以下、Xと表示する)を含む単一前駆体を利用した有機金属化学気相蒸着法によってBX構造式の化合物薄膜を蒸着する第1段階;
前記BX構造式の化合物薄膜に、I族金属元素(以下、Aと表示する)を含む前駆体を供給する有機金属化学気相蒸着法によってA2X構造式の化合物薄膜を形成する第2段階;
前記A2X構造式の化合物薄膜上に、III族元素B及びVI族元素Xを含む単一前駆体を利用した有機金属化学気相蒸着法によってABX2構造式の化合物薄膜を蒸着して第1p型半導体層を形成する第3段階;
前記第1p型半導体層にPNまたはPIN異種接合を形成して第1セルを形成する第4段階;
前記第1セル上に絶縁性のバッファ層を蒸着する第5段階;
前記バッファ層上に、III族元素B及びVI族元素Xを含む単一前駆体を利用した有機金属化学気相蒸着法によってBX構造式の化合物薄膜を蒸着する第6段階;
前記BX構造式の化合物薄膜に、I族金属元素Aを含む前駆体を供給する有機金属化学気相蒸着法によってA2X構造式の化合物薄膜を形成する第7段階;
前記A2X化合物薄膜上に、III族元素B及びVI族元素Xを含む単一前駆体を利用した有機金属化学気相蒸着法によってABX2構造式の化合物薄膜を蒸着して第2p型半導体層を形成する第8段階;及び
前記第2p型半導体層にPNまたはPIN異種接合を形成して第2セルを作り、第1セル/バッファ層/第2セルの多層セルを形成する第9段階とを含み;
第1セルと第2セルのABX2はそのエネルギーバンドギャップがお互い異なることを特徴とする太陽電池用光吸収層の製造方法。 - 第1セルと第2セルのABX2を構成するIII族元素Bはお互い異なるIII族元素であることを特徴とする請求項8に記載の太陽電池用光吸収層の製造方法。
- 第1セルと第2セルのABX2のうち一つはIII族元素Bの位置に二つ以上のIII族元素を含有することを特徴とする請求項8に記載の太陽電池用光吸収層の製造方法。
- 前記I族元素Aは銅(Cu)、前記III族元素Bはインジウム(In)、ガリウム(Ga)またはアルミニウム(Al)、前記VI族元素Xはセレニウム(Se)であることを特徴とする請求項8乃至10のいずれかに記載の太陽電池用光吸収層の製造方法。
- 基板;
前記基板上に形成され、周期律表上のI族元素(以下、Aと表示する)、III族(以下、BまたはCと表示し、BはCより原子番号が大きなもの)元素C及びVI族元素(以下、Xと表示する)とで構成されたACX2構造式の化合物薄膜の第1層;及び
前記第1層上に形成され、周期律表上のI族元素A、III族元素B及びVI族元素Xとで構成されたABX2構造式の化合物薄膜の第2層とで構成されたACX2/ABX2構造式の多層薄膜を含むことを特徴とする太陽電池用光吸収層。 - 前記I族元素Aは銅(Cu)、前記III族元素Bはインジウム(In)、前記III族元素Cはガリウム(Ga)またはアルミニウム(Al)、前記VI族元素Xはセレニウム(Se)であることを特徴とする請求項12に記載の太陽電池用光吸収層。
- 基板;
前記基板上に形成され、周期律表上のI族元素(以下、Aと表示する)、III族(以下、BまたはCと表示し、BはCより原子番号が大きなもの)元素C及びVI族元素(以下、Xと表示する)とで構成されたACX2構造式の化合物薄膜の第1層;及び
前記第1層上に形成され、周期律表上のI族元素A、III族元素B、C及びVI族元素Xとで構成されたA(B、C)X2構造式の化合物薄膜の第2層とを含んで構成されていることを特徴とする太陽電池用光吸収層。 - 前記第2層上に形成され、周期律表上のI族元素A、III族元素B及びVI族元素Xとで構成されたABX2構造式の化合物薄膜の第3層を含んで構成されていることを特徴とする請求項14に記載の太陽電池用光吸収層。
- 前記I族元素Aは銅(Cu)、前記III族元素Bはインジウム(In)、前記III族元素Cはガリウム(Ga)またはアルミニウム(Al)、前記VI族元素Xはセレニウム(Se)であることを特徴とする請求項14または15に記載の太陽電池用光吸収層。
- 基板;
前記基板上に形成され、周期律表上のI族元素(以下、Aと表示する)、III族元素(以下、Bと表示する)及びVI族元素(以下、Xと表示する)とで構成されたABX2構造式の化合物薄膜と、その上層のPNまたはPIN異種接合を有する第1層;
前記第1層上に形成される絶縁層の第2層;及び
前記第2層上に形成され、周期律表上のI族元素A、III族元素B及びVI族元素Xとで構成されたABX2構造式の化合物薄膜と、その上層のPNまたはPIN異種接合を有する第3層とを含み;
第1層と第3層のABX2化合物薄膜はそのエネルギーバンドギャップがお互い異なることを特徴とする太陽電池用光吸収層。 - 第1層と第3層のABX2を構成するIII族元素Bはお互い異なるIII族元素であることを特徴とする請求項17に記載の太陽電池用光吸収層。
- 第1層と第3層のABX2のうち一つはIII族元素Bの位置に二つ以上のIII族元素を含有することを特徴とする請求項17に記載の太陽電池用光吸収層。
- 前記I族元素Aは銅(Cu)、前記III族元素Bはインジウム(In)、ガリウム(Ga)またはアルミニウム(Al)、前記VI族元素Xはセレニウム(Se)であることを特徴とする請求項17乃至19のいずれかに記載の太陽電池用光吸収層。
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PCT/KR2005/000326 WO2006075811A1 (en) | 2005-01-12 | 2005-02-03 | Optical absorber layers for solar cell and method of manufacturing the same |
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US (1) | US7811633B2 (ja) |
EP (1) | EP1836733A1 (ja) |
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WO (1) | WO2006075811A1 (ja) |
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US20080092954A1 (en) | 2008-04-24 |
CN100466300C (zh) | 2009-03-04 |
JP4870094B2 (ja) | 2012-02-08 |
US7811633B2 (en) | 2010-10-12 |
WO2006075811A1 (en) | 2006-07-20 |
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EP1836733A1 (en) | 2007-09-26 |
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