JP2010529689A - 発光デバイス - Google Patents
発光デバイス Download PDFInfo
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- JP2010529689A JP2010529689A JP2010512143A JP2010512143A JP2010529689A JP 2010529689 A JP2010529689 A JP 2010529689A JP 2010512143 A JP2010512143 A JP 2010512143A JP 2010512143 A JP2010512143 A JP 2010512143A JP 2010529689 A JP2010529689 A JP 2010529689A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Abstract
Description
シリカゲル、
酸化亜鉛(ZnO)、
酸化イットリウム(Y2O3)、
二酸化チタン(TiO2)、
硫酸バリウム(BaSO4)、
アルミナ(A12O3)、
融解石英(SiO2)、
ヒュームドシリカ(SiO2)、
窒化アルミニウム、
ガラスビーズ、
二酸化ジルコニウム(ZrO2)、
炭化ケイ素(SiC)、
酸化タンタル(TaO5)、
窒化ケイ素(Si3N4)、
酸化ニオブ(Nb2O5)、又は
窒化ホウ素(BN)
を含む多くの異なる材料を含むことができる。TiO2、Al2O3、及びシリカは好ましい材料である。列挙されたもの以外の材料を使用することもできる。これらの光散乱粒子204は、周囲の媒体202に比べて大きい屈折率を有し、材料間に大きい屈折率差を生成すべきである。屈折率差は、屈折を引き起こすので、周囲の媒体202に比べて低い屈折率を有する散乱粒子材料を使用することも可能であろう。散乱粒子204の直径は、一般に、マイクロメートル未満であるが、より大きい粒子を使用することができる。光散乱粒子204は、媒体202に局所的な不均一性を生成し、それにより光は直線経路から逸らされる。
Claims (47)
- 少なくとも1つの発光体と、
封止体であって、前記少なくとも1つの発光体から放出される光が実質的にすべて前記封止体を通過するように配置され、前記封止体を通って伝搬する光の放射角に関して空間的に変化する光散乱特性を有する封止体と
を含むことを特徴とする発光デバイス。 - 前記封止体は、光散乱粒子を含むことを特徴とする請求項1に記載の発光デバイス。
- 前記光散乱粒子は、二酸化チタン(TiO2)、アルミナ(Al2O3)、及びヒュームドシリカ(SiO2)の群からの1つ又は複数の材料を含むことを特徴とする請求項2に記載の発光デバイス。
- 前記封止体は、多数の3次元(3D)領域を含み、前記領域のうちの少なくとも1つが前記領域のうちの他のものに比べてより高い濃度の前記光散乱粒子を含むことを特徴とする請求項2に記載の発光デバイス。
- 前記封止体は、二分する断面を有し、前記断面は前記少なくとも1つの発光体に対して遠位に配置された頂上区域を示し、前記頂上区域は、隣接する領域に比べて高い濃度の光散乱粒子を有する前記3D領域のうちの1つを構成することを特徴とする請求項4に記載の発光デバイス。
- 前記封止体は、二分する断面を有し、前記断面は、前記封止体の下部表面に沿って反対方向に延びる2つのくさび形区域を示し、その結果、前記くさび形区域は前記封止体の外側表面と同一の広がりをもち、前記くさび形区域は、隣接する領域に比べて高い濃度の光散乱粒子を有する前記3D領域のうちの1つを構成することを特徴とする請求項4に記載の発光デバイス。
- 前記封止体は、前記領域のうちの他のものに比べて高い濃度の光散乱粒子を有する多数の3D領域を含むことを特徴とする請求項4に記載の発光デバイス。
- 前記封止体の表面の1つ又は複数の部分は、前記表面に入射する放出光を散乱させるように変形されることを特徴とする請求項1に記載の発光デバイス。
- 前記封止体の前記表面の1つの部分は、前記表面に入射する放出光を散乱させるように変形されることを特徴とする請求項8に記載の発光デバイス。
- 前記発光体に向き合う前記封止体の前記表面のドーム形部分が変形されることを特徴とする請求項8に記載の発光デバイス。
- 前記少なくとも1つの発光体の露出した部分を囲む波長変換材料の層をさらに含むことを特徴とする請求項1に記載の発光デバイス。
- 前記基板上に配置された反射器要素をさらに含み、前記反射器要素は実質的に環状体の形状を有し、その中心に前記封止体及び前記少なくとも1つの発光体は配置され、前記反射器要素は、前記少なくとも1つの発光体からの光を前記封止体の方に方向を変えるための内壁を含むことを特徴とする請求項1に記載の発光デバイス。
- 前記反射器要素の内壁は、入射光を散乱させるように変形されることを特徴とする請求項12に記載の発光デバイス。
- 前記少なくとも1つの発光体は、前記基部に配置された複数の発光体を含むことを特徴とする請求項1に記載の発光デバイス。
- 表面に配置された少なくとも1つの発光体と、
封止体であって、前記デバイスから放出された光が実質的にすべて前記封止体を通過するように前記発光体の上に配置され、関連する濃度の光散乱粒子をもつ多数の3次元(3D)領域を有し、前記3D領域は、前記発光デバイスの出力強度及び色温度プロファイルを変更するために前記封止体内に配置される封止体と
を含むことを特徴とする発光デバイス。 - 前記3D領域は、一連の視野角にわたって前記放出光の色均一性を改善するために前記封止体内に配置されることを特徴とする請求項15に記載の発光デバイス。
- 前記3D領域は、前記視野角の関数として前記放出光の強度プロファイルを調整するために前記封止体内に配置されることを特徴とする請求項15に記載の発光デバイス。
- 前記封止体は隣接する領域に比べて高い濃度の光散乱粒子を有する3D領域を含み、前記3D領域は、前記少なくとも1つの発光体と向き合う前記封止体の頂上に配置されることを特徴とする請求項15に記載の発光デバイス。
- 前記封止体は、隣接する領域に比べて高い濃度の光散乱粒子を有する3D領域を含み、前記3D領域は、前記少なくとも1つの発光体に近接した前記封止体の表面の近くに配置され、前記封止体の中心から前記封止体の前記表面の方に外向きに延び、前記3D領域の体積は、前記封止体の前記中心からの距離と共に増加することを特徴とする請求項15に記載の発光デバイス。
- 前記封止体は、隣接する領域に比べて高い濃度の光散乱粒子を有する3D領域を含み、前記3D領域は、前記封止体の前記表面と同一の広がりをもつ外側半径と、前記封止体の前記中心からある距離の内側半径とを有する実質的に環状体の領域に配置されることを特徴とする請求項15に記載の発光デバイス。
- 前記封止体は、前記領域のうちの他のものに比べて高い濃度の光散乱粒子を有する多数の3D領域を含むことを特徴とする請求項15に記載の発光デバイス。
- 前記多数の3D領域は、2つを超える異なる濃度の光散乱粒子を含むことを特徴とする請求項21に記載の発光デバイス。
- 前記表面に配置された複数の発光体をさらに含むことを特徴とする請求項15に記載の発光デバイス。
- 光源から放出された光の出力強度及び色温度プロファイルを調整する方法であって、
前記放出光が実質的にすべて封止体を通過するように前記光源に隣接して前記封止体を設けるステップと、
前記封止体内に及び前記封止体の表面に沿って選択的に配置された光散乱要素のクラスタを使用して前記光源から放出された光の方向を変えるステップと、
前記クラスタの選択的な配置によって決定される出力プロファイルを伴って前記封止体から光を放出するステップと
を含むことを特徴とする方法。 - 前記光散乱要素は、光散乱粒子を含むことを特徴とする請求項24に記載の方法。
- 前記光散乱粒子は、二酸化チタン(TiO2)、アルミナ(Al2O3)、及びヒュームドシリカ(SiO2)の群からの1つ又は複数の材料を含むことを特徴とする請求項25に記載の方法。
- 前記光散乱要素は、前記封止体の前記表面の変形部分を含むことを特徴とする請求項24に記載の方法。
- 前記光散乱要素は、前記封止体内の光散乱粒子と、前記封止体の前記表面の変形部分とを含むことを特徴とする請求項24に記載の方法。
- 封止体であって、前記封止体の形状を構成し、第1の屈折率を有する第1の材料と、
第2の材料であって、前記第2の材料が前記第1の材料の全体にわたって不均一な密度を有するように前記第1の材料内に分散された微粒子特性を有し、第2の屈折率を有する第2の材料と
を含むことを特徴とする封止体。 - 前記封止体は、前記封止体内で隣接する領域よりも高い濃度の前記第2の材料を有する高密度領域を含むことを特徴とする請求項29に記載の封止体。
- 前記封止体は、凸状湾曲表面及び平坦面を有することを特徴とする請求項30に記載の封止体。
- 前記封止体は、少なくとも1つの光源からの光を受け取るように位置決めされ、前記光は前記平坦面に入射することを特徴とする請求項31に記載の封止体。
- 前記高密度領域は、前記高密度領域が一連の低放射角にわたって前記少なくとも1つの光源から放出される光と相互作用するように前記封止体内に配置されることを特徴とする請求項32に記載の封止体。
- 前記高密度領域は、前記封止体の頂上に配置されることを特徴とする請求項33に記載の封止体。
- 前記高密度領域は、前記高密度領域が一連の高放射角にわたって前記少なくとも1つの光源から放出される光と相互作用するように前記封止体内に配置されることを特徴とする請求項32に記載の封止体。
- 前記高密度領域は、前記高密度領域が前記封止体内に逆円錐を形成するように前記封止体の平坦な端部に沿って配置されることを特徴とする請求項35に記載の封止体。
- 前記高密度領域は、前記高密度領域が中間範囲の放射角にわたって前記少なくとも1つの光源から放出される光と相互作用するように前記封止体内に配置されることを特徴とする請求項32に記載の封止体。
- 前記高密度領域は、実質的に環状体の形状を有することを特徴とする請求項37に記載の封止体。
- 前記高密度領域は、前記高密度領域が低角度、中間範囲角度、及び/又は高角度の組合せにわたって前記少なくとも1つの光源から放出される光と相互作用するように前記封止体内に配置されることを特徴とする請求項32に記載の封止体。
- 前記封止体は、前記封止体内で隣接する領域よりも高い濃度の前記第2の材料を有する複数の高密度領域を含むことを特徴とする請求項29に記載の封止体。
- 前記封止体の表面の一部が変形されていることを特徴とする請求項29に記載の封止体。
- 封止体を製作する方法であって、
前記封止体を形成するためにモールドを用意するステップと、
特定の光散乱特性を有するある量の第1の材料を前記モールドに導入するステップと、
前記封止体が別個の領域を含み、前記領域の各々が特定の光散乱特性を有するように、特定の光散乱特性を有する追加の材料を順番に前記モールドに導入するステップと
を含むことを特徴とする方法。 - 前記モールドに導入された前記材料の各々は、前記材料のうちの次のものを前記順番で前記モールドに導入する前に固化することができることを特徴とする請求項42に記載の方法。
- 前記材料は、光散乱粒子を含むことを特徴とする請求項42に記載の方法。
- 前記材料の前記光散乱特性は、前記材料の各々の中の前記光散乱粒子の濃度によって少なくとも部分的に決定されることを特徴とする請求項44に記載の方法。
- 前記封止体は、実質的に半球であり、前記第1の材料は前記追加の材料に比べて最も高い濃度の光散乱粒子を有し、前記追加の材料は、前記封止体の頂上からの距離が増加すると共に光散乱粒子の濃度が減少するように配置されることを特徴とする請求項44に記載の方法。
- 前記封止体は、少なくとも3つの前記別個の領域を含むことを特徴とする請求項42に記載の方法。
Applications Claiming Priority (3)
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US11/818,818 | 2007-06-14 | ||
US11/818,818 US7999283B2 (en) | 2007-06-14 | 2007-06-14 | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
PCT/US2008/004453 WO2008156518A1 (en) | 2007-06-14 | 2008-04-03 | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
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JP2012191540A Division JP5648030B2 (ja) | 2007-06-14 | 2012-08-31 | 発光デバイス |
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US (2) | US7999283B2 (ja) |
EP (1) | EP2160769B1 (ja) |
JP (2) | JP5081299B2 (ja) |
CN (1) | CN101790798B (ja) |
TW (1) | TW200903862A (ja) |
WO (1) | WO2008156518A1 (ja) |
Cited By (8)
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JP2011204657A (ja) * | 2010-03-26 | 2011-10-13 | Enplas Corp | 光束制御部材およびこれを用いた照明装置 |
JP2011258579A (ja) * | 2009-08-18 | 2011-12-22 | Sharp Corp | 光源装置 |
WO2012099145A1 (ja) * | 2011-01-20 | 2012-07-26 | シャープ株式会社 | 発光装置、照明装置、表示装置及び発光装置の製造方法 |
JP2013062393A (ja) * | 2011-09-14 | 2013-04-04 | Sharp Corp | 発光装置 |
JP2013516074A (ja) * | 2009-12-26 | 2013-05-09 | アクロラックス インコーポレイテッド | 発光波長を変換する均一膜層構造及びその形成方法 |
CN103797596A (zh) * | 2011-09-13 | 2014-05-14 | 株式会社小糸制作所 | 发光模块 |
JP2021502695A (ja) * | 2017-11-08 | 2021-01-28 | 廈門市三安光電科技有限公司 | 紫外ledパッケージ構造 |
JP2021036619A (ja) * | 2017-08-04 | 2021-03-04 | ルミレッズ ホールディング ベーフェー | 薄型直接式バックライトのための超広配光発光ダイオード(led)レンズ |
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JP5648030B2 (ja) | 2015-01-07 |
US20080308825A1 (en) | 2008-12-18 |
CN101790798A (zh) | 2010-07-28 |
EP2160769A1 (en) | 2010-03-10 |
JP2012256936A (ja) | 2012-12-27 |
EP2160769B1 (en) | 2018-10-31 |
US20110260195A1 (en) | 2011-10-27 |
WO2008156518A1 (en) | 2008-12-24 |
US7999283B2 (en) | 2011-08-16 |
CN101790798B (zh) | 2014-07-30 |
JP5081299B2 (ja) | 2012-11-28 |
TW200903862A (en) | 2009-01-16 |
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