JP2010527160A - マイクロリソグラフィ用投影対物器械及び投影露光装置 - Google Patents

マイクロリソグラフィ用投影対物器械及び投影露光装置 Download PDF

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Publication number
JP2010527160A
JP2010527160A JP2010507832A JP2010507832A JP2010527160A JP 2010527160 A JP2010527160 A JP 2010527160A JP 2010507832 A JP2010507832 A JP 2010507832A JP 2010507832 A JP2010507832 A JP 2010507832A JP 2010527160 A JP2010527160 A JP 2010527160A
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JP
Japan
Prior art keywords
projection objective
light
stray light
substrate
reflective element
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Pending
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JP2010507832A
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English (en)
Japanese (ja)
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JP2010527160A5 (enExample
Inventor
ハンス−ユルゲン ロスタルスキ
Original Assignee
カール・ツァイス・エスエムティー・アーゲー
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Application filed by カール・ツァイス・エスエムティー・アーゲー filed Critical カール・ツァイス・エスエムティー・アーゲー
Publication of JP2010527160A publication Critical patent/JP2010527160A/ja
Publication of JP2010527160A5 publication Critical patent/JP2010527160A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010507832A 2007-05-14 2008-05-09 マイクロリソグラフィ用投影対物器械及び投影露光装置 Pending JP2010527160A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007024214 2007-05-14
PCT/EP2008/003760 WO2008138560A1 (de) 2007-05-14 2008-05-09 Projektionsobjektiv und projektionsbelichtungsanlage für die mikrolithographie

Publications (2)

Publication Number Publication Date
JP2010527160A true JP2010527160A (ja) 2010-08-05
JP2010527160A5 JP2010527160A5 (enExample) 2011-06-23

Family

ID=39689310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010507832A Pending JP2010527160A (ja) 2007-05-14 2008-05-09 マイクロリソグラフィ用投影対物器械及び投影露光装置

Country Status (4)

Country Link
US (1) US20100085644A1 (enExample)
JP (1) JP2010527160A (enExample)
DE (1) DE102008001719A1 (enExample)
WO (1) WO2008138560A1 (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001166210A (ja) * 1999-11-05 2001-06-22 Carl Zeiss:Fa ２つの中間像を持つ反射屈折対物レンズ
JP2001217191A (ja) * 1999-12-23 2001-08-10 Asm Lithography Bv リソグラフィ投影装置
JP2003322710A (ja) * 2002-05-01 2003-11-14 Canon Inc 光吸収膜、光吸収膜形成方法、露光装置、デバイス製造方法及びデバイス
JP2005519347A (ja) * 2002-03-08 2005-06-30 カール・ツァイス・エスエムティー・アーゲー 最大開口型の投影対物レンズ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107526A (en) * 1990-10-31 1992-04-21 The United State Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Water window imaging x-ray microscope
US5274420A (en) * 1992-04-20 1993-12-28 International Business Machines Corporation Beamsplitter type lens elements with pupil-plane stops for lithographic systems
JPH11345761A (ja) * 1998-05-29 1999-12-14 Nikon Corp 走査型露光装置
DE10040998A1 (de) * 2000-08-22 2002-03-14 Zeiss Carl Projektionsbelichtungsanlage
US6912049B2 (en) * 2001-12-19 2005-06-28 Nir Diagnostics, Inc. Electromagnetic radiation attenuating and scattering member with improved thermal stability
KR101590743B1 (ko) * 2005-06-02 2016-02-01 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 대물 렌즈

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001166210A (ja) * 1999-11-05 2001-06-22 Carl Zeiss:Fa ２つの中間像を持つ反射屈折対物レンズ
JP2001217191A (ja) * 1999-12-23 2001-08-10 Asm Lithography Bv リソグラフィ投影装置
JP2005519347A (ja) * 2002-03-08 2005-06-30 カール・ツァイス・エスエムティー・アーゲー 最大開口型の投影対物レンズ
JP2003322710A (ja) * 2002-05-01 2003-11-14 Canon Inc 光吸収膜、光吸収膜形成方法、露光装置、デバイス製造方法及びデバイス

Also Published As

Publication number Publication date
DE102008001719A1 (de) 2008-11-20
WO2008138560A1 (de) 2008-11-20
US20100085644A1 (en) 2010-04-08

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