JP4496782B2 - 反射光学系及び露光装置 - Google Patents
反射光学系及び露光装置 Download PDFInfo
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- JP4496782B2 JP4496782B2 JP2004008570A JP2004008570A JP4496782B2 JP 4496782 B2 JP4496782 B2 JP 4496782B2 JP 2004008570 A JP2004008570 A JP 2004008570A JP 2004008570 A JP2004008570 A JP 2004008570A JP 4496782 B2 JP4496782 B2 JP 4496782B2
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- light
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
Description
W=k・λ/NA (k:定数) (a)
前記開口絞りの近傍に設けられた遮光部材を備えていることを特徴とする反射光学系を提供する。
図1は、本発明の第1実施形態にかかる反射光学系の構成を概略的に示す断面図である。第1実施形態にかかる反射光学系は、不図示の第1面(物体面)からの光が、第1反射結像光学系G1を介して、第1面の中間像を形成する。そして、第1反射結像光学系G1を介して形成された第1面の中間像からの光が、第2反射結像光学系G2を介して、中間像の像(第1面の縮小像)を第2面(像面)上に形成する。
G2 第2反射結像光学系
M1〜M6 反射鏡
AS,AS’ 開口絞り
AS1,AS1’ 開口絞りユニット
1、4、5 遮光部材
2 開口部
3 開口部の周縁部分
6 補助開口部
11 レーザプラズマX線源
12 波長選択フィルタ
13 照明光学系
14 マスク
15 マスクステージ
16 投影光学系(反射光学系)
17 ウェハ
18 ウェハステージ
Claims (8)
- 複数の反射鏡と、開口絞りとを備え、第1面の縮小像を第2面上に形成する反射光学系において、
前記開口絞りの近傍に設けられた遮光部材を備え、
前記遮光部材は、前記開口絞りの光入射側に設けられた第1遮光部材と、前記開口絞りの光射出側に設けられた第2遮光部材とを有することを特徴とする反射光学系。 - 前記第1遮光部材と前記第2遮光部材とは、前記開口絞りの開口部の中心点に関してほぼ点対称に配置されていることを特徴とする請求項1に記載の反射光学系。
- 前記遮光部材は、その近傍を通過する光束の断面形状に応じた形状を有することを特徴とする請求項1または2に記載の反射光学系。
- 前記開口絞りは、前記遮光部材の近傍を通過する所要光束を通過させるための補助開口部を有することを特徴とする請求項1乃至3のいずれか1項に記載の反射光学系。
- 前記開口絞りと前記遮光部材とは一体に構成されていることを特徴とする請求項1乃至4のいずれか1項に記載の反射光学系。
- 前記遮光部材は、前記開口絞りの開口部周縁の一部に配置されていることを特徴とする請求項1乃至5のいずれか1項に記載の反射光学系。
- 前記第1面に設定されたマスクを照明するための照明系と、前記マスクのパターンを前記第2面に設定された感光性基板上へ投影露光するための請求項1乃至6のいずれか1項に記載の反射光学系とを備えていることを特徴とする露光装置。
- 前記照明系は、露光光としてX線を供給するための光源を有し、
前記反射光学系に対して前記マスクおよび前記感光性基板を相対移動させて、前記マスクのパターンを前記感光性基板上へ投影露光することを特徴とする請求項7に記載の露光装置。
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JP2004008570A JP4496782B2 (ja) | 2003-01-21 | 2004-01-16 | 反射光学系及び露光装置 |
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JP2003012306 | 2003-01-21 | ||
JP2004008570A JP4496782B2 (ja) | 2003-01-21 | 2004-01-16 | 反射光学系及び露光装置 |
Publications (2)
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JP2004246343A JP2004246343A (ja) | 2004-09-02 |
JP4496782B2 true JP4496782B2 (ja) | 2010-07-07 |
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JP2004008570A Expired - Lifetime JP4496782B2 (ja) | 2003-01-21 | 2004-01-16 | 反射光学系及び露光装置 |
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JP (1) | JP4496782B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003290094A1 (en) * | 2003-10-29 | 2005-06-08 | Asml Netherlands B.V. | Optical assembly for photolithography |
JP5126928B2 (ja) * | 2005-04-20 | 2013-01-23 | 大日本スクリーン製造株式会社 | 画像記録装置 |
JP2008542829A (ja) | 2005-06-02 | 2008-11-27 | カール・ツァイス・エスエムティー・アーゲー | マイクロリソグラフィ投影対物レンズ |
DE102006045075A1 (de) | 2006-09-21 | 2008-04-03 | Carl Zeiss Smt Ag | Steuerbares optisches Element |
EP2181357A1 (en) | 2007-08-24 | 2010-05-05 | Carl Zeiss SMT AG | Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography |
CN101815969B (zh) | 2007-10-02 | 2013-07-17 | 卡尔蔡司Smt有限责任公司 | 用于微光刻的投射物镜 |
JP5365096B2 (ja) * | 2008-08-25 | 2013-12-11 | 株式会社ニコン | 光学系、露光装置及び電子デバイスの製造方法 |
JP5533656B2 (ja) * | 2008-09-18 | 2014-06-25 | 株式会社ニコン | 結像光学系、露光装置及び電子デバイスの製造方法 |
DE102009034028A1 (de) * | 2009-03-30 | 2010-10-07 | Carl Zeiss Smt Ag | Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik |
WO2010133231A1 (en) | 2009-05-16 | 2010-11-25 | Carl Zeiss Smt Ag | Projection exposure apparatus for semiconductor lithography comprising an optical correction arrangement |
WO2012137699A1 (ja) * | 2011-04-05 | 2012-10-11 | 株式会社ニコン | 光学装置、露光装置、およびデバイス製造方法 |
DE102012212753A1 (de) | 2012-07-20 | 2014-01-23 | Carl Zeiss Smt Gmbh | Projektionsoptik |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000048237A1 (fr) * | 1999-02-12 | 2000-08-17 | Nikon Corporation | Procede et appareil d'exposition |
JP2002116382A (ja) * | 2000-10-05 | 2002-04-19 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
WO2002033467A1 (de) * | 2000-10-20 | 2002-04-25 | Carl Zeiss | 8-spiegel-mikrolithographie-projektionsobjektiv |
JP2003015040A (ja) * | 2001-07-04 | 2003-01-15 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
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2004
- 2004-01-16 JP JP2004008570A patent/JP4496782B2/ja not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000048237A1 (fr) * | 1999-02-12 | 2000-08-17 | Nikon Corporation | Procede et appareil d'exposition |
JP2002116382A (ja) * | 2000-10-05 | 2002-04-19 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
WO2002033467A1 (de) * | 2000-10-20 | 2002-04-25 | Carl Zeiss | 8-spiegel-mikrolithographie-projektionsobjektiv |
JP2003015040A (ja) * | 2001-07-04 | 2003-01-15 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
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