JP2010525161A - バリヤー層及びその製造方法 - Google Patents
バリヤー層及びその製造方法 Download PDFInfo
- Publication number
- JP2010525161A JP2010525161A JP2010504002A JP2010504002A JP2010525161A JP 2010525161 A JP2010525161 A JP 2010525161A JP 2010504002 A JP2010504002 A JP 2010504002A JP 2010504002 A JP2010504002 A JP 2010504002A JP 2010525161 A JP2010525161 A JP 2010525161A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- layer
- metalloid
- metal
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910052752 metalloid Inorganic materials 0.000 claims abstract description 93
- 229910052751 metal Inorganic materials 0.000 claims abstract description 92
- 239000002184 metal Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 74
- 150000002738 metalloids Chemical class 0.000 claims abstract description 72
- -1 metalloid ion Chemical class 0.000 claims abstract description 71
- 238000004070 electrodeposition Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000002608 ionic liquid Substances 0.000 claims abstract description 24
- 238000007747 plating Methods 0.000 claims abstract description 24
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 17
- 239000011263 electroactive material Substances 0.000 claims abstract description 15
- 230000002829 reductive effect Effects 0.000 claims abstract description 12
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 39
- 150000003839 salts Chemical class 0.000 claims description 27
- 150000002500 ions Chemical class 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 230000005670 electromagnetic radiation Effects 0.000 claims description 10
- 239000011888 foil Substances 0.000 claims description 10
- 230000035699 permeability Effects 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 5
- 150000001450 anions Chemical class 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- 150000001768 cations Chemical class 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000001556 precipitation Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 3
- ZTHQBROSBNNGPU-UHFFFAOYSA-N Butyl hydrogen sulfate Chemical compound CCCCOS(O)(=O)=O ZTHQBROSBNNGPU-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- KIWBPDUYBMNFTB-UHFFFAOYSA-N Ethyl hydrogen sulfate Chemical compound CCOS(O)(=O)=O KIWBPDUYBMNFTB-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002651 NO3 Inorganic materials 0.000 claims description 3
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 claims description 3
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229940063013 borate ion Drugs 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- IDUWTCGPAPTSFB-UHFFFAOYSA-N hexyl hydrogen sulfate Chemical compound CCCCCCOS(O)(=O)=O IDUWTCGPAPTSFB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- JZMJDSHXVKJFKW-UHFFFAOYSA-M methyl sulfate(1-) Chemical compound COS([O-])(=O)=O JZMJDSHXVKJFKW-UHFFFAOYSA-M 0.000 claims description 3
- UZZYXUGECOQHPU-UHFFFAOYSA-M n-octyl sulfate Chemical compound CCCCCCCCOS([O-])(=O)=O UZZYXUGECOQHPU-UHFFFAOYSA-M 0.000 claims description 3
- 229940067739 octyl sulfate Drugs 0.000 claims description 3
- 238000013086 organic photovoltaic Methods 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- UZZYXUGECOQHPU-UHFFFAOYSA-N sulfuric acid monooctyl ester Natural products CCCCCCCCOS(O)(=O)=O UZZYXUGECOQHPU-UHFFFAOYSA-N 0.000 claims description 3
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical class NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 claims description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical class C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 2
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical class C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical class NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 125000002947 alkylene group Chemical group 0.000 claims description 2
- HYGWNUKOUCZBND-UHFFFAOYSA-N azanide Chemical compound [NH2-] HYGWNUKOUCZBND-UHFFFAOYSA-N 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 238000006056 electrooxidation reaction Methods 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 125000000623 heterocyclic group Chemical group 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229940005654 nitrite ion Drugs 0.000 claims description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 2
- 229940085991 phosphate ion Drugs 0.000 claims description 2
- 150000004714 phosphonium salts Chemical class 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 150000004693 imidazolium salts Chemical class 0.000 claims 2
- 150000003863 ammonium salts Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 167
- 150000001875 compounds Chemical class 0.000 description 25
- 230000009467 reduction Effects 0.000 description 22
- 239000000243 solution Substances 0.000 description 19
- 238000000151 deposition Methods 0.000 description 16
- 229920000642 polymer Polymers 0.000 description 16
- 150000002739 metals Chemical class 0.000 description 15
- 230000008021 deposition Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 125000003118 aryl group Chemical group 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 150000002894 organic compounds Chemical class 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 5
- 229920000767 polyaniline Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 206010064127 Solar lentigo Diseases 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 230000001627 detrimental effect Effects 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 229920001746 electroactive polymer Polymers 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 3
- 229920002098 polyfluorene Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- 206010027146 Melanoderma Diseases 0.000 description 2
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000004676 glycans Chemical class 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920000412 polyarylene Polymers 0.000 description 2
- 229920002959 polymer blend Polymers 0.000 description 2
- 229920000128 polypyrrole Polymers 0.000 description 2
- 229920001282 polysaccharide Polymers 0.000 description 2
- 239000005017 polysaccharide Substances 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 125000000547 substituted alkyl group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 description 1
- JIABEENURMZTTI-UHFFFAOYSA-N 1-isocyanato-2-[(2-isocyanatophenyl)methyl]benzene Chemical compound O=C=NC1=CC=CC=C1CC1=CC=CC=C1N=C=O JIABEENURMZTTI-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229920000265 Polyparaphenylene Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- MKRNVBXERAPZOP-UHFFFAOYSA-N Starch acetate Chemical compound O1C(CO)C(OC)C(O)C(O)C1OCC1C(OC2C(C(O)C(OC)C(CO)O2)OC(C)=O)C(O)C(O)C(OC2C(OC(C)C(O)C2O)CO)O1 MKRNVBXERAPZOP-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000003868 ammonium compounds Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229920006187 aquazol Polymers 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 238000007759 kiss coating Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Chemical class 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Chemical class 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000009666 routine test Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
- C25D3/665—Electroplating: Baths therefor from melts from ionic liquids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
- Electroplating Methods And Accessories (AREA)
- Adornments (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
【選択図】図2
Description
イオン性液体及び金属のイオン又は半金属(metalloid)のイオンを含んでいるめっき液を使用して、基体の表面に電着により金属の層又は半金属の層を備えること、ここで該金属のイオン又は半金属のイオンは還元されそして析出されて金属の層又は半金属の層を形成する、
を含み、かつ
任意的に、金属の層又は半金属の層を少なくとも部分的に酸化すること
を含んでいてもよい上記方法に関する。
− H、
− 式−CaH2a+1の分枝状及び非分枝状アルキル基、
− 式−O−CaH2a+1の分枝状及び非分枝状アルコキシ基、
− (任意的に1以上のアルキル基及び/又は1以上のアルコキシアルキル基、好ましくはそれぞれ上記の式−CaH2a+1及びO−CaH2a+1のもの、で置換されていてもよい)アリール基、好ましくは環構造中に6〜12の炭素原子を有するアリール基、及び
− C≡N、
の群から好ましくはそれぞれ独立に選択される。
R2は極性部分、芳香族部分(特にフェニルを含んでいる部分)、任意的に置換されていてもよいアルキル又はハロゲンであり、
但し、R1及びR2のうちの少なくとも1は極性部分又は芳香族部分であり、
ならびに/又は、鎖中の芳香族部分の好ましくは少なくとも一部は、トルエンジイソシアネート及びメチレンジフェニルイソシアネートの群から選択される。
A) 金属イオン及び/又は半金属イオンの(非イオン状態までの)還元を引き起こすのに十分である電位、場合により、電流(すなわち、還元電位/電流)から、
B) 金属イオン及び/又は半金属イオンの還元を引き起こすには不十分である電位、場合により、電流(すなわち、非還元電位/電流)であって、該非還元電位/電流が酸化電位/電流であってもよい電位、場合により、電流へ、
変えられることができる。
A) 高い絶対値を有して金属イオン又は半金属イオンの還元を引き起こすのに十分な電位、場合により、高い絶対値を有して金属イオン又は半金属イオンの還元を引き起こすのに十分な、基体を通る電流から、
B) 低い絶対値を有するが、金属又は半金属を含んでいる核の成長を引き起こすにはまだ十分な電位、場合により、低い絶対値を有するが、金属又は半金属を含んでいる核の成長を引き起こすにはまだ十分な、基体を通る電流へ、
変えることも可能である。
− 一置換のイミダゾリウム化合物、二置換のイミダゾリウム化合物、三置換のイミダゾリウム化合物、ピリジニウム化合物、ピロリジニウム化合物、ホスホニウム化合物、アンモニウム化合物、グアニジニウム化合物及びイソウロニウム化合物、ならびにこれらの組み合わせの群から選択されたカチオン。置換基は、特に式(I)R1R2R3R4N+X−のアミン塩中のR1〜R5について言及したときの上記の置換基から選択されることができる。
− 塩素イオン、臭素イオン、ヨウ素イオン、硝酸イオン、亜硝酸イオン、フッ素イオン、リン酸イオン、イミドイオン、アミドイオン、ホウ酸イオン、トシル酸イオン、テトラフルオロホウ酸イオン、ヘキサフルオロホウ酸イオン、ヘキサフルオロリン酸イオン、トリフルオロメタンスルホン酸イオン、メチル硫酸イオン、ビス(ペンタフルオロエチル)ホスフィン酸イオン、チオシアン酸イオン、オクチル硫酸イオン、ヘキシル硫酸イオン、ブチル硫酸イオン、エチル硫酸イオン、ジシアナミドイオン、ヘキサフルオロアンチモン酸イオン、ビス(ペンタフルオロエチル)ホスフィン酸イオン、ビス(トリフルオロメチル)イミドイオン、トリフルオロ酢酸イオン、ビストリフルオロスルホンイミドイオン、トリフレートイオン及びジシアナミドイオンならびにこれらの組み合わせの群から選択されたアニオン。
Claims (20)
- バリヤー層、特に酸素バリヤー層及び/又は水バリヤー層、を含む物品を製造する方法において、
イオン性液体及び金属のイオン又は半金属のイオンを含んでいるめっき液を使用して、有機電気活性物質を含む基体の表面に電着により金属の層又は半金属の層を備えること、ここで該金属のイオン又は半金属のイオンは上記電着の間に還元されそして析出されて金属の層又は半金属の層を形成する、を含み、かつ
好ましくは、上記金属の層又は半金属の層を少なくとも部分的に酸化すること
を含む上記方法。 - 該金属の層又は半金属の層が、ロール―ツ―ロール法を用いて電着される、請求項1に記載の方法。
- 該金属のイオン又は半金属のイオンが、アルミニウム、ケイ素、タンタル、チタン、クロム、ビスマス、ジルコニウム、ハフニウム、タングステン、ニオブ、及び亜鉛の群から選択される、請求項1又は2に記載の方法。
- 複数の金属の、半金属の、酸化された金属の又は酸化された半金属の層を含む積み重ねが備えられ、上記層の少なくとも2が中間層により隔てられている、請求項1〜3のいずれか1項に記載の方法。
- 該イオン性液体が、
− 一置換のイミダゾリウム誘導体、二置換のイミダゾリウム誘導体、三置換のイミダゾリウム誘導体、ピリジニウム誘導体、ピロリジニウム誘導体、ホスホニウム誘導体、アンモニウム誘導体、グアニジニウム誘導体及びイソウロニウム誘導体の群からのカチオンの少なくとも1及び
− 塩素イオン、臭素イオン、ヨウ素イオン、硝酸イオン、亜硝酸イオン、フッ素イオン、リン酸イオン、イミドイオン、アミドイオン、ホウ酸イオン、トシル酸イオン、テトラフルオロホウ酸イオン、ヘキサフルオロホウ酸イオン、ヘキサフルオロリン酸イオン、トリフルオロメタンスルホン酸イオン、メチル硫酸イオン、ビス(ペンタフルオロエチル)ホスフィン酸イオン、チオシアン酸イオン、オクチル硫酸イオン、ヘキシル硫酸イオン、ブチル硫酸イオン、エチル硫酸イオン、ジシアナミドイオン、ヘキサフルオロアンチモン酸イオン、ビス(ペンタフルオロエチル)ホスフィン酸イオン、ビス(トリフルオロメチル)イミドイオン、トリフルオロ酢酸イオン、ビストリフルオロスルホンイミドイオン、トリフレートイオン及びジシアナミドイオンの群からの少なくとも1のアニオン
から形成された塩から選択された塩であって、プロセス条件下で液状である塩を含んでいる、請求項1〜4のいずれか1項に記載の方法。 - 該イオン性液体が、式R1R2R3R4N+X−(I)の少なくとも1のアミン塩と少なくとも1の水和された塩との反応によって形成された塩から選択された塩であって、プロセス条件下で液状である塩を含んでおり、該水和された塩はLi、Mg、Ca、Cr、Mn、Fe、Co、Ni、Cu、Zn、Cd、Pb、Bi、La又はCeの塩化物、硝酸塩、硫酸塩又は酢酸塩であり、該式中、R1、R2及びR3はそれぞれ独立にC1〜C5アルキルもしくはC6〜C10シクロアルキル基であり、又はR2及びR3は一緒になってC4〜C10アルキレン基を表し、それによって式(I)のN原子とともに5〜11員複素環を形成し、R4は水素、又はフェニル、又はC1〜C12アルキルもしくはシクロアルキル基であり、OH、Cl、Br、F、I、フェニル、NH2、CN、NO2、COOR5、CHO、COR5及びOR5から選択された少なくとも1の基で任意的に置換されていてもよく、R5はC1〜C10アルキル又はシクロアルキル基であり、かつX−は当該水和された塩によって錯化されることができるアニオンである、請求項1〜5のいずれか1項に記載の方法。
- 電位及び/又は電流が、少なくとも1の第一の値(A)と該第一の値とは異なる少なくとも1の第二の値(B)との間で複数回変化され、該値の少なくとも1が析出を起こすのに十分である、請求項1〜6のいずれか1項に記載の方法。
- 該電着が電流制御される、請求項1〜7のいずれか1項に記載の方法。
- 該めっき液が本質的に水を含まない、請求項1〜8のいずれか1項に記載の方法。
- 該基体が箔、フィルム、及びシートの群から選択される、請求項1〜9のいずれか1項に記載の方法。
- 該金属の層又は半金属の層が、熱酸化又は電気化学酸化により少なくとも部分的に酸化される、請求項1〜10のいずれか1項に記載の方法。
- 該金属の層又は半金属の層が酸化されて、金属酸化物の層又は半金属酸化物の層を形成する、請求項1〜11のいずれか1項に記載の方法。
- 物品が、有機ダイオード、例えば有機LED、有機光電池、力学的エネルギーを電気エネルギーに又はその逆に変換するための有機アクチュエーター、有機電気回路、有機トランジスター、及び有機太陽電池の群から選択される、請求項1〜12のいずれか1項に記載の方法。
- 該表面が、カソード、特に有機半導体物質を含むカソード又は有機半導体物質上に析出された無機の導電性又は半導電性物質を含むカソード、の表面である、請求項1〜13のいずれか1項に記載の方法。
- 該表面が多孔性である、特に微孔性又はメソ細孔性である、請求項1〜14のいずれか1項に記載の方法。
- 該表面の少なくとも一部が、電磁放射に曝される、請求項1〜15のいずれか1項に記載の方法。
- 請求項1〜16のいずれか1項に記載の方法により得られる物品。
- 水の透過性が10−3g水/m2/日未満、好ましくは10−5g水/m2/日未満である、請求項17に記載の物品。
- 該バリヤー層が、単独の金属層、単独の半金属層、単独の金属酸化物層又は単独の半金属酸化物層からなる、請求項17又は18に記載の物品。
- 該バリヤー層が、単独の金属又は半金属層と単独の金属又は半金属酸化物層との組合せからなり、該金属層は該金属又は半金属酸化物層と物品のコアとの間に存在する、請求項17又は18に記載の物品。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07106347A EP1983079A1 (en) | 2007-04-17 | 2007-04-17 | Barrier layer and method for making the same |
PCT/NL2008/050220 WO2008127110A1 (en) | 2007-04-17 | 2008-04-17 | Barrier layer and method for making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010525161A true JP2010525161A (ja) | 2010-07-22 |
Family
ID=38511369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010504002A Pending JP2010525161A (ja) | 2007-04-17 | 2008-04-17 | バリヤー層及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100108524A1 (ja) |
EP (2) | EP1983079A1 (ja) |
JP (1) | JP2010525161A (ja) |
AT (1) | ATE504676T1 (ja) |
DE (1) | DE602008006059D1 (ja) |
WO (1) | WO2008127110A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012043129A1 (ja) * | 2010-09-30 | 2012-04-05 | 株式会社日立製作所 | 電気アルミニウムめっき液 |
KR101628575B1 (ko) * | 2014-12-24 | 2016-06-08 | 현대자동차주식회사 | 이온성 액체 전기 도금 기법을 이용한 염료감응형 태양전지용 고내식성 탄탈룸-은 복합 전극 제조방법 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI438953B (zh) | 2008-01-30 | 2014-05-21 | Osram Opto Semiconductors Gmbh | 電子組件之製造方法及電子組件 |
WO2010093237A1 (en) * | 2009-02-11 | 2010-08-19 | Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno | Optoelectronic device and method for fabricating such device |
EP2244317A1 (en) * | 2009-04-23 | 2010-10-27 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Optoelectric device and method for manufacturing the same |
US10030312B2 (en) * | 2009-10-14 | 2018-07-24 | Massachusetts Institute Of Technology | Electrodeposited alloys and methods of making same using power pulses |
DE102009046732A1 (de) * | 2009-11-16 | 2011-05-19 | Ewald Dörken Ag | Verfahren zur Beschichtung einer metallischen Oberfläche eines Werkstücks |
CN102906216B (zh) * | 2010-05-27 | 2016-03-09 | 默克专利股份有限公司 | 组合物以及生产有机电子器件的方法 |
US8784690B2 (en) | 2010-08-20 | 2014-07-22 | Rhodia Operations | Polymer compositions, polymer films, polymer gels, polymer foams, and electronic devices containing such films, gels and foams |
US8367160B2 (en) | 2010-11-05 | 2013-02-05 | United Technologies Corporation | Coating method for reactive metal |
US9757109B2 (en) | 2010-12-10 | 2017-09-12 | Illumix Surgical Canada Inc. | Organic light emitting diode illuminated surgical retractor |
US8778164B2 (en) | 2010-12-16 | 2014-07-15 | Honeywell International Inc. | Methods for producing a high temperature oxidation resistant coating on superalloy substrates and the coated superalloy substrates thereby produced |
EP2476784A1 (en) | 2011-01-18 | 2012-07-18 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method for manufacturing an electronic device by electrodeposition from an ionic liquid |
WO2013066454A2 (en) * | 2011-08-02 | 2013-05-10 | Massachusetts Institute Of Technology | Tuning nano-scale grain size distribution in multilayered alloys electrodeposited using ionic solutions, including a1-mn and similar alloys |
US9771661B2 (en) | 2012-02-06 | 2017-09-26 | Honeywell International Inc. | Methods for producing a high temperature oxidation resistant MCrAlX coating on superalloy substrates |
US20130299453A1 (en) * | 2012-05-14 | 2013-11-14 | United Technologies Corporation | Method for making metal plated gas turbine engine components |
WO2014162395A1 (ja) * | 2013-04-01 | 2014-10-09 | パイオニア株式会社 | 発光装置 |
US11932960B2 (en) * | 2013-11-26 | 2024-03-19 | Arizona Board Of Regents On Behalf Of Arizona State University | Light-induced aluminum plating on silicon for solar cell metallization |
US10087540B2 (en) | 2015-02-17 | 2018-10-02 | Honeywell International Inc. | Surface modifiers for ionic liquid aluminum electroplating solutions, processes for electroplating aluminum therefrom, and methods for producing an aluminum coating using the same |
WO2018044930A1 (en) * | 2016-08-29 | 2018-03-08 | Board Of Trustees Of The University Of Arkansas | Light-directed electrochemical patterning of copper structures |
CN107785501B (zh) * | 2017-10-17 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | 柔性oled面板的封装方法及封装结构 |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01129995A (ja) * | 1987-09-29 | 1989-05-23 | Siemens Ag | 金属及び非金属加工材料用ガス障壁層及びその製法 |
JPH01129989A (ja) * | 1987-09-29 | 1989-05-23 | Siemens Ag | 金属及び非金属上のイオン障壁層及びその製法 |
JPH0261087A (ja) * | 1988-08-27 | 1990-03-01 | Nobuyuki Koura | ニオブおよびニオブ合金の電着法およびその電着浴 |
JPH0488189A (ja) * | 1990-07-31 | 1992-03-23 | Nisshin Steel Co Ltd | 電気Ti合金めっき浴およびその浴によるめっき方法 |
JPH04231492A (ja) * | 1990-12-27 | 1992-08-20 | Mitsubishi Petrochem Co Ltd | 低融点組成物及び電気亜鉛めっき方法 |
JPH04231493A (ja) * | 1990-12-27 | 1992-08-20 | Mitsubishi Petrochem Co Ltd | 低融点組成物及び電気クロムめっき方法 |
JPH05271986A (ja) * | 1992-03-24 | 1993-10-19 | Mitsubishi Petrochem Co Ltd | アルミニウム・有機高分子積層体 |
JPH10312883A (ja) * | 1997-05-12 | 1998-11-24 | Matsushita Electric Ind Co Ltd | 有機電界発光素子 |
JP2001279486A (ja) * | 2000-03-30 | 2001-10-10 | Japan Science & Technology Corp | タンタルのめっき法 |
JP2002294485A (ja) * | 2001-03-29 | 2002-10-09 | Mitsui Chemicals Inc | 溶融塩および溶融塩を用いたケイ素含有膜の形成方法 |
JP2004509927A (ja) * | 2000-09-27 | 2004-04-02 | サイオニックス・リミテッド | イオン性液体類及びその使用方法 |
JP2005528250A (ja) * | 2002-04-30 | 2005-09-22 | ヴァイテックス システムズ インコーポレイテッド | バリアコーティング及びその製造方法 |
JP2005537963A (ja) * | 2002-09-11 | 2005-12-15 | ゼネラル・エレクトリック・カンパニイ | 傾斜組成を有する拡散障壁コーティング及びそれを含むデバイス |
WO2006036492A1 (en) * | 2004-09-23 | 2006-04-06 | 3M Innovative Properties Company | Organic electroluminescent device |
WO2006061081A2 (de) * | 2004-12-10 | 2006-06-15 | Merck Patent Gmbh | Elektrochemische abscheidung von tantal und/oder kupfer in ionischen flüssigkeiten |
JP2006278021A (ja) * | 2005-03-28 | 2006-10-12 | Pioneer Electronic Corp | 有機機能素子封止膜検査方法及び構造 |
JP2007070698A (ja) * | 2005-09-07 | 2007-03-22 | Kyoto Univ | 金属の電析方法 |
WO2007093574A2 (en) * | 2006-02-15 | 2007-08-23 | Akzo Nobel N.V. | Method to electrodeposit metals using ionic liquids |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010052752A1 (en) * | 2000-04-25 | 2001-12-20 | Ghosh Amalkumar P. | Thin film encapsulation of organic light emitting diode devices |
DE10108893C5 (de) * | 2001-02-23 | 2011-01-13 | Rolf Prof. Dr. Hempelmann | Verfahren zur Herstellung von Metallen und deren Legierungen |
KR100859818B1 (ko) | 2001-03-29 | 2008-09-24 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 기판의 침투율을 측정하는 방법 및 장치, 배치로부터 기판 세트를 침투율에 대해 테스트하는 방법 및 캡슐화의 침투율을 측정하는 방법 |
US6569706B2 (en) * | 2001-09-19 | 2003-05-27 | Osram Opto Semiconductors Gmbh | Fabrication of organic light emitting diode using selective printing of conducting polymer layers |
EP1694275A2 (en) * | 2003-12-18 | 2006-08-30 | AFG Industries, Inc. | Protective layer for optical coatings with enhanced corrosion and scratch resistance |
US20070215865A1 (en) * | 2006-03-20 | 2007-09-20 | General Electric Company | Opto-electronic devices exhibiting enhanced efficiency |
US20070215879A1 (en) * | 2006-03-20 | 2007-09-20 | General Electric Company | Opto-electronic devices exhibiting enhanced efficiency |
EP1983592A1 (en) * | 2007-04-17 | 2008-10-22 | Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO | Method for manufacturing an electrode |
-
2007
- 2007-04-17 EP EP07106347A patent/EP1983079A1/en not_active Withdrawn
-
2008
- 2008-04-17 US US12/596,092 patent/US20100108524A1/en not_active Abandoned
- 2008-04-17 WO PCT/NL2008/050220 patent/WO2008127110A1/en active Application Filing
- 2008-04-17 JP JP2010504002A patent/JP2010525161A/ja active Pending
- 2008-04-17 DE DE602008006059T patent/DE602008006059D1/de active Active
- 2008-04-17 EP EP08741641A patent/EP2142685B1/en not_active Not-in-force
- 2008-04-17 AT AT08741641T patent/ATE504676T1/de not_active IP Right Cessation
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01129995A (ja) * | 1987-09-29 | 1989-05-23 | Siemens Ag | 金属及び非金属加工材料用ガス障壁層及びその製法 |
JPH01129989A (ja) * | 1987-09-29 | 1989-05-23 | Siemens Ag | 金属及び非金属上のイオン障壁層及びその製法 |
JPH0261087A (ja) * | 1988-08-27 | 1990-03-01 | Nobuyuki Koura | ニオブおよびニオブ合金の電着法およびその電着浴 |
JPH0488189A (ja) * | 1990-07-31 | 1992-03-23 | Nisshin Steel Co Ltd | 電気Ti合金めっき浴およびその浴によるめっき方法 |
JPH04231492A (ja) * | 1990-12-27 | 1992-08-20 | Mitsubishi Petrochem Co Ltd | 低融点組成物及び電気亜鉛めっき方法 |
JPH04231493A (ja) * | 1990-12-27 | 1992-08-20 | Mitsubishi Petrochem Co Ltd | 低融点組成物及び電気クロムめっき方法 |
JPH05271986A (ja) * | 1992-03-24 | 1993-10-19 | Mitsubishi Petrochem Co Ltd | アルミニウム・有機高分子積層体 |
JPH10312883A (ja) * | 1997-05-12 | 1998-11-24 | Matsushita Electric Ind Co Ltd | 有機電界発光素子 |
JP2001279486A (ja) * | 2000-03-30 | 2001-10-10 | Japan Science & Technology Corp | タンタルのめっき法 |
JP2004509927A (ja) * | 2000-09-27 | 2004-04-02 | サイオニックス・リミテッド | イオン性液体類及びその使用方法 |
JP2002294485A (ja) * | 2001-03-29 | 2002-10-09 | Mitsui Chemicals Inc | 溶融塩および溶融塩を用いたケイ素含有膜の形成方法 |
JP2005528250A (ja) * | 2002-04-30 | 2005-09-22 | ヴァイテックス システムズ インコーポレイテッド | バリアコーティング及びその製造方法 |
JP2005537963A (ja) * | 2002-09-11 | 2005-12-15 | ゼネラル・エレクトリック・カンパニイ | 傾斜組成を有する拡散障壁コーティング及びそれを含むデバイス |
WO2006036492A1 (en) * | 2004-09-23 | 2006-04-06 | 3M Innovative Properties Company | Organic electroluminescent device |
JP2008515148A (ja) * | 2004-09-23 | 2008-05-08 | スリーエム イノベイティブ プロパティズ カンパニー | 有機エレクトロルミネセンスデバイス |
WO2006061081A2 (de) * | 2004-12-10 | 2006-06-15 | Merck Patent Gmbh | Elektrochemische abscheidung von tantal und/oder kupfer in ionischen flüssigkeiten |
JP2006278021A (ja) * | 2005-03-28 | 2006-10-12 | Pioneer Electronic Corp | 有機機能素子封止膜検査方法及び構造 |
JP2007070698A (ja) * | 2005-09-07 | 2007-03-22 | Kyoto Univ | 金属の電析方法 |
WO2007093574A2 (en) * | 2006-02-15 | 2007-08-23 | Akzo Nobel N.V. | Method to electrodeposit metals using ionic liquids |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012043129A1 (ja) * | 2010-09-30 | 2012-04-05 | 株式会社日立製作所 | 電気アルミニウムめっき液 |
KR101628575B1 (ko) * | 2014-12-24 | 2016-06-08 | 현대자동차주식회사 | 이온성 액체 전기 도금 기법을 이용한 염료감응형 태양전지용 고내식성 탄탈룸-은 복합 전극 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
ATE504676T1 (de) | 2011-04-15 |
EP2142685B1 (en) | 2011-04-06 |
WO2008127110A1 (en) | 2008-10-23 |
EP2142685A1 (en) | 2010-01-13 |
DE602008006059D1 (de) | 2011-05-19 |
EP1983079A8 (en) | 2010-06-16 |
EP1983079A1 (en) | 2008-10-22 |
US20100108524A1 (en) | 2010-05-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2010525161A (ja) | バリヤー層及びその製造方法 | |
US8227293B2 (en) | Method for manufacturing an electrode | |
EP3075013B1 (en) | Process of forming a photoactive layer of an optoelectronic device | |
TW200836352A (en) | Metal-insulator-metal (MIM) devices and their methods of fabrication | |
US6949403B2 (en) | Non-vacuum methods for the fabrication of organic semiconductor devices | |
JP2022075784A (ja) | 太陽電池及び太陽電池の製造方法 | |
Di Girolamo et al. | Electrodeposition as a versatile preparative tool for perovskite photovoltaics: Aspects of metallization and selective contacts/active layer formation | |
EP2476784A1 (en) | Method for manufacturing an electronic device by electrodeposition from an ionic liquid | |
US7749780B2 (en) | Polymer optoelectronic device and methods for making the same | |
JP7352537B2 (ja) | 太陽電池 | |
Kumar et al. | Fusible Low Work Function Top Electrode for Vacuum-Free Perovskite Light-Emitting Diode Application: Role of OH-Terminated Sn Atoms at the Alloy Surface | |
WO2010093237A1 (en) | Optoelectronic device and method for fabricating such device | |
JP6592639B1 (ja) | 太陽電池の製造方法、及び、太陽電池 | |
JP6927834B2 (ja) | 太陽電池の製造方法及び太陽電池 | |
JP6921582B2 (ja) | 太陽電池 | |
JP6804957B2 (ja) | フレキシブル太陽電池及びフレキシブル太陽電池の製造方法 | |
Wang et al. | Organic electroluminescent device based on electropolymerized polybithiophene as the hole-transport layer | |
JPWO2018062307A1 (ja) | フレキシブル太陽電池 | |
Lubberman | Design of 3D light emitting diodes based on nanoporous metal/polymer bulk junction composites and synthesis of silver nanoparticles | |
Zerguine et al. | Electrical and Photo-Electrochemical Properties of Conducting Polymers/Indium Phosphide Heterojunction Devices | |
US20200395494A1 (en) | Method for manufacturing solar cell, and solar cell | |
Fujisawa et al. | Fabrication and Optical Characteristics of Electrodeposited Conducting Polymer Thin Film Based on Poly (p-phenylene vinylene) Derivative | |
BR112019012150B1 (pt) | Célula solar de alta eficiência de conversão fotoelétrica |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110324 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130125 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130214 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130514 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131212 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140612 |