JP2010524263A - 浅い接合の形成技術 - Google Patents
浅い接合の形成技術 Download PDFInfo
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/263—Bombardment with radiation with high-energy radiation
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Abstract
Description
Claims (29)
- 浅い接合を形成する方法であって、該方法は、
ジゲルマン(Ge2H6)、窒化ゲルマニウム(Ge3N4)、ゲルマニウム−フッ素化合物(GFn、ここでn=1,2又は3)及び他のゲルマニウム含有化合物からなる群から選ばれる1つ以上の材料に基づく分子イオンを含むイオンビームを発生させるステップと、
前記イオンビームを半導体ウェハに衝突させるステップと、
を備えることを特徴とする浅い接合形成方法。 - 前記イオンビームの衝突は、前記半導体ウェハ内へのドーパントのイオン注入前に、前記半導体ウェハの少なくとも一部分をアモルファス化させることを特徴とする請求項1記載の方法。
- 前記半導体ウェハ内にドーパントを組み込むための第1のイオン注入を前記半導体ウェハに実行するステップと、
前記半導体ウェハ内に1つ以上の共注入種を位置させるための第2のイオン注入を前記半導体ウェハに実行するステップであって、前記1つ以上の共注入種は、CF、CF2、ZnCxFy及びCxHyZn(ここで、Zは炭素又は水素以外の1つ以上の原子種を表わす)からなる群から選ばれる1つ以上の材料に基づく分子イオンビームで注入されるステップと、
を更に備えることを特徴とする請求項1記載の方法。 - 前記半導体ウェハ内に1つ以上の共注入種を位置させるための第1のイオン注入を前記半導体ウェハに実行するステップであって、前記1つ以上の共注入種はCF、CF2、ZnCxFy及びCxHyZn(ここで、Zは炭素又は水素以外の1つ以上の原子種を表わす)からなる群から選ばれる1つ以上の材料に基づく分子イオンビームで注入されるステップと、
前記半導体ウェハ内にドーパントを組み込むための第2のイオン注入を前記半導体ウェハに実行するステップと、
を更に備えることを特徴とする請求項1記載の方法。 - 前記半導体ウェハ内にドーパントを組み込むためのイオン注入を前記半導体ウェハに実行するステップを更に備え、該イオン注入の少なくとも開始時に、前記半導体ウェハの温度を室温より低くすることを特徴とする請求項1記載の方法。
- 前記半導体ウェハの温度は0℃より低いことを特徴とする請求項5記載の方法。
- 前記半導体ウェハの温度は前記イオン注入前に所望の温度に予め冷却されることを特徴とする請求項5記載の方法。
- 前記半導体ウェハは前記イオン注入の少なくとも一部分の間所望の温度範囲に維持されることを特徴とする請求項5記載の方法。
- 前記イオンビームの衝突の間、前記半導体ウェハは室温より低い温度範囲内に維持されることを特徴とする請求項1記載の方法。
- 浅い接合を形成する方法であって、該方法は、
CF、CF2、ZnCxFy及びCxHyZn(ここで、Zは炭素又は水素以外の1つ以上の原子種を表わす)からなる群から選ばれる1つ以上の材料に基づく分子イオンを含むイオンビームを発生するステップと、
前記イオンビームを半導体ウェハに衝突させるステップと、
を備えることを特徴とする浅い接合形成方法。 - 前記イオンビームの衝突は、前記半導体ウェハ内へのドーパントのイオン注入前に、前記半導体ウェハの少なくとも一部分をアモルファス化させることを特徴とする請求項10記載の方法。
- 前記イオンビームの衝突は、更に、炭素及びフッ素からなる群から選ばれる1つ以上の共注入種を前記半導体ウェハ内の1つ以上の所定の位置に位置させることを特徴とする請求項11記載の方法。
- 前記半導体ウェハの前記アモルファス化された部分内にドーパントを注入するために前記半導体ウェハに低温イオン注入を実行するステップを更に備えることを特徴とする請求項11記載の方法。
- 前記イオンビームの衝突は、1つ以上の共注入種を前記半導体ウェハ内に位置させることを特徴とする請求項10記載の方法。
- 前記1つ以上の共注入種は炭素及びフッ素からなる群から選ばれることを特徴とする請求項14記載の方法。
- 前記1つ以上の共注入種は前記半導体ウェハ内のエンド・オブ・レンジ内に置かれることを特徴とする請求項15記載の方法。
- 前記イオンビームの衝突中、前記半導体ウェハは室温より低い温度範囲内に維持されることを特徴とする請求項10記載の方法。
- 浅い接合を形成する装置であって、該装置は、
ジゲルマン(Ge2H6)、窒化ゲルマニウム(Ge3N4)、ゲルマニウム−フッ素化合物(GFn、ここでn=1,2又は3)及び他のゲルマニウム含有化合物からなる群から選ばれる1つ以上の材料に基づく分子イオンを含むイオンビームを発生するイオンソースアセンブリと、
前記イオンビームを半導体ウェハに衝突させる1つ以上のコンポーネントと、
を備えることを特徴とする浅い接合形成装置。 - 前記イオンビームの衝突は、前記半導体ウェハ内へのドーパントのイオン注入前に、前記半導体ウェハの少なくとも一部分をアモルファス化させることを特徴とする請求項1記載の装置。
- 前記イオンビームの衝突中、前記半導体ウェハを室温より低い温度範囲に維持するように構成されていることを特徴とする請求項18記載の装置。
- 前記半導体ウェハの前記アモルファス化された部分内にドーパントを組み込むために低温イオン注入を前記半導体ウェハに実行するように構成されていることを特徴とする請求項18記載の装置。
- 浅い接合を形成する装置であって、該装置は、
CF、CF2、ZnCxFy及びCxHyZn(ここで、Zは炭素又は水素以外の1つ以上の原子種を表わす)からなる群から選ばれる1つ以上の材料に基づく分子イオンを含むイオンビームを発生するイオン源アセンブリと、
前記イオンビームを半導体ウェハに衝突させる1つ以上のコンポーネント構成要素と、
を備えることを特徴とする浅い接合形成装置。 - 前記イオンビームの衝突は、更に、炭素及びフッ素からなる群から選ばれる1つ以上の共注入種を前記半導体ウェハ内の1つ以上の所定の位置に位置させることを特徴とする請求項22記載の装置。
- 前記イオンビームの衝突は、1つ以上の共注入種を前記半導体ウェハ内に位置させることを特徴とする請求項22記載の装置。
- 前記1つ以上の共注入種は炭素及びフッ素からなる群から選ばれることを特徴とする請求項24記載の装置。
- 前記1つ以上の共注入種は前記半導体ウェハ内のエンド・オブ・レンジ内に置かれることを特徴とする請求項25記載の装置。
- 前記イオンビームの衝突は、前記半導体ウェハ内へのドーパントのイオン注入前に、前記半導体ウェハの少なくとも一部分をアモルファス化させることを特徴とする請求項22記載の装置。
- 更に、前記イオンビームの衝突中、前記半導体ウェハを室温より低い温度範囲内に維持するように構成されている特徴とする請求項22記載の装置。
- 更に、前記半導体ウェハの前記アモルファス化された部分内にドーパントを注入するために前記半導体ウェハに低温イオン注入を実行するように構成されていることを特徴とする請求項22記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/733,467 US7642150B2 (en) | 2006-11-08 | 2007-04-10 | Techniques for forming shallow junctions |
PCT/US2008/059333 WO2008124554A1 (en) | 2007-04-10 | 2008-04-04 | Techniques for forming shallow junctions |
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JP2010524263A true JP2010524263A (ja) | 2010-07-15 |
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JP2010503126A Pending JP2010524263A (ja) | 2007-04-10 | 2008-04-04 | 浅い接合の形成技術 |
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US (1) | US7642150B2 (ja) |
JP (1) | JP2010524263A (ja) |
KR (1) | KR101492533B1 (ja) |
CN (1) | CN101681820B (ja) |
TW (1) | TWI438831B (ja) |
WO (1) | WO2008124554A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009027027A (ja) * | 2007-07-20 | 2009-02-05 | Toshiba Corp | 半導体装置の製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US20100112795A1 (en) * | 2005-08-30 | 2010-05-06 | Advanced Technology Materials, Inc. | Method of forming ultra-shallow junctions for semiconductor devices |
US20070178679A1 (en) * | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
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