JP2010521061A - ドープされたナノ粒子系半導体接合 - Google Patents

ドープされたナノ粒子系半導体接合 Download PDF

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JP2010521061A
JP2010521061A JP2009550855A JP2009550855A JP2010521061A JP 2010521061 A JP2010521061 A JP 2010521061A JP 2009550855 A JP2009550855 A JP 2009550855A JP 2009550855 A JP2009550855 A JP 2009550855A JP 2010521061 A JP2010521061 A JP 2010521061A
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semiconductor
layer
nanoparticles
doped
annealing
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JP2010521061A5 (enExample
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ブライアン カーエン，キース
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イーストマン コダック カンパニー
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    • H—ELECTRICITY
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    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
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    • H10P14/34—Deposited materials, e.g. layers
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP2009550855A 2007-02-26 2007-12-10 ドープされたナノ粒子系半導体接合 Pending JP2010521061A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/678,734 US7605062B2 (en) 2007-02-26 2007-02-26 Doped nanoparticle-based semiconductor junction
PCT/US2007/025208 WO2008105863A1 (en) 2007-02-26 2007-12-10 Doped nanoparticle-based semiconductor junction

Publications (2)

Publication Number Publication Date
JP2010521061A true JP2010521061A (ja) 2010-06-17
JP2010521061A5 JP2010521061A5 (enExample) 2011-12-22

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JP2009550855A Pending JP2010521061A (ja) 2007-02-26 2007-12-10 ドープされたナノ粒子系半導体接合

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US (1) US7605062B2 (enExample)
EP (1) EP2115780A1 (enExample)
JP (1) JP2010521061A (enExample)
CN (1) CN101611496B (enExample)
TW (1) TW200847244A (enExample)
WO (1) WO2008105863A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015128105A (ja) * 2013-12-27 2015-07-09 ソニー株式会社 半導体ナノ粒子分散体、光電変換素子および撮像装置

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WO2008073373A1 (en) * 2006-12-11 2008-06-19 Evident Technologies Nanostructured layers, method of making nanostructured layers, and application thereof
US20090014423A1 (en) * 2007-07-10 2009-01-15 Xuegeng Li Concentric flow-through plasma reactor and methods therefor
WO2008137738A2 (en) * 2007-05-03 2008-11-13 Innovalight, Inc. Method of forming group iv semiconductor junctions using laser processing
US8968438B2 (en) * 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
US20090053878A1 (en) * 2007-08-21 2009-02-26 Maxim Kelman Method for fabrication of semiconductor thin films using flash lamp processing
US20110031452A1 (en) * 2007-11-28 2011-02-10 Todd Krauss Nanoparticles Having Continuous Photoluminescence
US8986511B1 (en) * 2009-10-14 2015-03-24 U.S. Department Of Energy Visible light photoreduction of CO2 using heterostructured catalysts
US9372283B2 (en) * 2009-11-13 2016-06-21 Babak NIKOOBAKHT Nanoengineered devices based on electro-optical modulation of the electrical and optical properties of plasmonic nanoparticles
JP2013512306A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ＣＺＴＳ／Ｓｅ前駆体インクとＣＺＴＳ／Ｓｅ薄フィルムおよびＣＺＴＳ／Ｓｅ系光電池の製造方法
US8530883B2 (en) * 2010-03-11 2013-09-10 Light-Based Technologies Incorporated Manufacture of quantum dot-enabled solid-state light emitters
US8813857B2 (en) 2011-02-17 2014-08-26 Baker Hughes Incorporated Annulus mounted potential energy driven setting tool
US9318628B2 (en) * 2011-05-20 2016-04-19 The University Of Chicago Mid-infrared photodetectors
EP2984910B1 (en) 2013-04-12 2020-01-01 The Board of Trustees of the University of Illionis Inorganic and organic transient electronic devices
CN105899640B (zh) * 2014-01-06 2018-06-19 纳米技术有限公司 无镉量子点纳米粒子
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
US11088147B2 (en) 2019-06-26 2021-08-10 Micron Technology, Inc. Apparatus with doped surfaces, and related methods with in situ doping
KR102685407B1 (ko) * 2019-08-02 2024-07-18 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 표시 장치 및 표시 장치 제조 방법
EP4588110A1 (en) * 2022-09-15 2025-07-23 China Triumph International Engineering Co., Ltd. Method for manufacturing a copper-free cdte based thin film solar cell device

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JP2002232010A (ja) * 2001-02-07 2002-08-16 Sony Corp 表示装置およびその製造方法
WO2005071764A1 (ja) * 2004-01-23 2005-08-04 Hoya Corporation 量子ドット分散発光素子およびその製造方法

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US5537000A (en) 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US6521541B2 (en) 2000-08-23 2003-02-18 California Institute Of Technology Surface preparation of substances for continuous convective assembly of fine particles
EP1540741B1 (en) 2002-09-05 2014-10-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7294449B1 (en) * 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom
WO2005094271A2 (en) 2004-03-25 2005-10-13 The Regents Of The University Of California Colloidal quantum dot light emitting diodes
GB2441666B (en) 2005-04-25 2010-12-29 Univ Arkansas Doped semiconductor nanocrystals and methods of making same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002232010A (ja) * 2001-02-07 2002-08-16 Sony Corp 表示装置およびその製造方法
WO2005071764A1 (ja) * 2004-01-23 2005-08-04 Hoya Corporation 量子ドット分散発光素子およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015128105A (ja) * 2013-12-27 2015-07-09 ソニー株式会社 半導体ナノ粒子分散体、光電変換素子および撮像装置

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Publication number Publication date
EP2115780A1 (en) 2009-11-11
CN101611496B (zh) 2012-11-28
CN101611496A (zh) 2009-12-23
US20080206972A1 (en) 2008-08-28
WO2008105863A1 (en) 2008-09-04
US7605062B2 (en) 2009-10-20
TW200847244A (en) 2008-12-01

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