CN101611496B - 掺杂纳米颗粒型半导体结 - Google Patents

掺杂纳米颗粒型半导体结 Download PDF

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CN101611496B
CN101611496B CN2007800515595A CN200780051559A CN101611496B CN 101611496 B CN101611496 B CN 101611496B CN 2007800515595 A CN2007800515595 A CN 2007800515595A CN 200780051559 A CN200780051559 A CN 200780051559A CN 101611496 B CN101611496 B CN 101611496B
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semiconductor
doped
layer
nanoparticles
colloidal
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CN101611496A (zh
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K·B·卡亨
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Nanoco Technologies Ltd
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Eastman Kodak Co
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    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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  • Condensed Matter Physics & Semiconductors (AREA)
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CN2007800515595A 2007-02-26 2007-12-10 掺杂纳米颗粒型半导体结 Expired - Fee Related CN101611496B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/678,734 US7605062B2 (en) 2007-02-26 2007-02-26 Doped nanoparticle-based semiconductor junction
US11/678,734 2007-02-26
PCT/US2007/025208 WO2008105863A1 (en) 2007-02-26 2007-12-10 Doped nanoparticle-based semiconductor junction

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CN101611496A CN101611496A (zh) 2009-12-23
CN101611496B true CN101611496B (zh) 2012-11-28

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US (1) US7605062B2 (enExample)
EP (1) EP2115780A1 (enExample)
JP (1) JP2010521061A (enExample)
CN (1) CN101611496B (enExample)
TW (1) TW200847244A (enExample)
WO (1) WO2008105863A1 (enExample)

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WO2008073373A1 (en) * 2006-12-11 2008-06-19 Evident Technologies Nanostructured layers, method of making nanostructured layers, and application thereof
US20090014423A1 (en) * 2007-07-10 2009-01-15 Xuegeng Li Concentric flow-through plasma reactor and methods therefor
WO2008137738A2 (en) * 2007-05-03 2008-11-13 Innovalight, Inc. Method of forming group iv semiconductor junctions using laser processing
US8968438B2 (en) * 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
US20090053878A1 (en) * 2007-08-21 2009-02-26 Maxim Kelman Method for fabrication of semiconductor thin films using flash lamp processing
US20110031452A1 (en) * 2007-11-28 2011-02-10 Todd Krauss Nanoparticles Having Continuous Photoluminescence
US8986511B1 (en) * 2009-10-14 2015-03-24 U.S. Department Of Energy Visible light photoreduction of CO2 using heterostructured catalysts
US9372283B2 (en) * 2009-11-13 2016-06-21 Babak NIKOOBAKHT Nanoengineered devices based on electro-optical modulation of the electrical and optical properties of plasmonic nanoparticles
JP2013512306A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ＣＺＴＳ／Ｓｅ前駆体インクとＣＺＴＳ／Ｓｅ薄フィルムおよびＣＺＴＳ／Ｓｅ系光電池の製造方法
US8530883B2 (en) * 2010-03-11 2013-09-10 Light-Based Technologies Incorporated Manufacture of quantum dot-enabled solid-state light emitters
US8813857B2 (en) 2011-02-17 2014-08-26 Baker Hughes Incorporated Annulus mounted potential energy driven setting tool
US9318628B2 (en) * 2011-05-20 2016-04-19 The University Of Chicago Mid-infrared photodetectors
EP2984910B1 (en) 2013-04-12 2020-01-01 The Board of Trustees of the University of Illionis Inorganic and organic transient electronic devices
JP2015128105A (ja) * 2013-12-27 2015-07-09 ソニー株式会社 半導体ナノ粒子分散体、光電変換素子および撮像装置
CN105899640B (zh) * 2014-01-06 2018-06-19 纳米技术有限公司 无镉量子点纳米粒子
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
US11088147B2 (en) 2019-06-26 2021-08-10 Micron Technology, Inc. Apparatus with doped surfaces, and related methods with in situ doping
KR102685407B1 (ko) * 2019-08-02 2024-07-18 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 표시 장치 및 표시 장치 제조 방법
EP4588110A1 (en) * 2022-09-15 2025-07-23 China Triumph International Engineering Co., Ltd. Method for manufacturing a copper-free cdte based thin film solar cell device

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US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

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JP2002232010A (ja) * 2001-02-07 2002-08-16 Sony Corp 表示装置およびその製造方法
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US7880377B2 (en) * 2004-01-23 2011-02-01 Hoya Corporation Quantum dot-dispersed light emitting device, and manufacturing method thereof
WO2005094271A2 (en) 2004-03-25 2005-10-13 The Regents Of The University Of California Colloidal quantum dot light emitting diodes
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Patent Citations (1)

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US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

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Publication number Publication date
EP2115780A1 (en) 2009-11-11
CN101611496A (zh) 2009-12-23
US20080206972A1 (en) 2008-08-28
WO2008105863A1 (en) 2008-09-04
JP2010521061A (ja) 2010-06-17
US7605062B2 (en) 2009-10-20
TW200847244A (en) 2008-12-01

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