JP2010516021A - フレキシブル素子の製造方法及びフレキシブル表示装置の製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 38
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- 239000002184 metal Substances 0.000 claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
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- 239000004033 plastic Substances 0.000 claims abstract description 17
- 229920003023 plastic Polymers 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims description 37
- 229910052718 tin Inorganic materials 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- -1 SeO x Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000000926 separation method Methods 0.000 abstract description 29
- 239000000126 substance Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 56
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- 239000010409 thin film Substances 0.000 description 7
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- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
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- 230000000087 stabilizing effect Effects 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H—ELECTRICITY
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- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
【選択図】図1
Description
図1は、本発明の第1実施の形態によるフレキシブル電気素子の断面図である。
本発明の第2実施の形態によるフレキシブル電気素子は、母体基板であるガラス基板上に剥離層を形成した後、これをパターニングして一部領域が除去された剥離層パターンを形成し、前記剥離層パターン上に金属膜、絶縁層及び半導体素子層を積層し、前記半導体素子層上にプラスチックを接合させた後、母体基板と剥離層パターンの間の界面を分離して製造することができる。
Claims (16)
- 母体基板上に剥離層を形成する段階と、
前記剥離層上に金属膜を形成する段階と、
前記金属膜上に絶縁層を形成する段階と、
前記絶縁膜上に半導体素子層を形成する段階と、
前記半導体素子層にフレキシブル基板を接合させる段階と、
前記母体基板と前記剥離層を界面分離させて前記母体基板をとり除く段階と、
を含むフレキシブル素子の製造方法。 - 前記剥離層は、MgO、MnO、Mn3O4、MoOy、SnO2、SeOx、SiOx、GaOx、InO、TixOy、VxOy、ZrOy、WOy、Al2O3、SrO、TexOy、TeO2、ZnO、ITO、IZO、SiN、TiN、TaN、AlN、BN、MO2N、VN、ZrN、NbN、CrN、Gaの中で少なくとも一つを含んで形成することを特徴とする請求項1記載のフレキシブル素子の製造方法。
- 前記剥離層は、少なくとも1nm以上の厚さで形成することを特徴とする請求項1記載のフレキシブル素子の製造方法。
- 前記金属膜は、Ag、Au、Cu、Cr、W、Al、W、Mo、Zn、Ni、Pt、Pd、Co、In、Mn、Si、Ta、Ti、Sn、Zn、Pb、V、Ru、Ir、Zr、Rhの中で少なくとも一つを含んで形成することを特徴とする請求項1記載のフレキシブル素子の製造方法。
- 前記金属膜は、少なくとも1nm以上の厚さで形成することを特徴とする請求項4記載のフレキシブル素子の製造方法。
- 前記絶縁層は、酸化シリコーン(SiO2)、窒化シリコーン(SiNx)、フォトレジスト、ポリイミドの中で少なくとも一つを含む絶縁体で形成することを特徴とする請求項1記載のフレキシブル素子の製造方法。
- 前記半導体素子層は、有機発光ダイオード、有機電界トランジスターの中で少なくとも一つを含むことを特徴とする請求項1記載のフレキシブル素子の製造方法。
- 前記母体基板は、ガラス基板を使うことを特徴とする請求項1ないし請求項7いずれか1項に記載のフレキシブル素子の製造方法。
- 前記フレキシブル基板は、プラスチック基板を使うことを特徴とする請求項1ないし請求項7いずれか1項に記載のフレキシブル素子の製造方法。
- 半導体素子層の発光素子が単位画素として機能するフレキシブル表示装置の製造方法において、
母体基板上に剥離層を形成する段階と、
前記剥離層上に金属膜を形成する段階と、
前記金属膜上に絶縁層を形成する段階と、
前記絶縁層上に発光素子を含む半導体素子層を形成する段階と、
前記半導体素子層にフレキシブル基板を接合させる段階と、
前記母体基板と前記剥離層を界面分離させて前記母体基板をとり除く段階と、
を含むフレキシブル表示装置の製造方法。 - 前記剥離層は、MgO、MnO、Mn3O4、MoOy、SnO2、SeOx、SiOx、GaOx、InO、TixOy、VxOy、ZrOy、WOy、Al2O3、SrO、TexOy、TeO2、ZnO、ITO、IZO、SiN、TiN、TaN、AlN、BN、MO2N、VN、ZrN、NbN、CrN、Gaの中で少なくとも一つを含んで形成することを特徴とする請求項10記載のフレキシブル表示装置の製造方法。
- 前記金属膜は、Ag、Au、Cu、Cr、W、Al、W、Mo、Zn、Ni、Pt、Pd、Co、In、Mn、Si、Ta、Ti、Sn、Zn、Pb、V、Ru、Ir、Zr、Rhの中で少なくとも一つを含んで形成することを特徴とする請求項10記載のフレキシブル表示装置の製造方法。
- 前記絶縁層は、酸化シリコーン(SiO2)、窒化シリコーン(SiNx)、フォトレジスト、ポリイミドの中で少なくとも一つを含む絶縁体で形成することを特徴とする請求項10記載のフレキシブル表示装置の製造方法。
- 前記半導体素子層は、有機発光ダイオード、有機電界トランジスターの中で少なくとも一つを含むことを特徴とする請求項10記載のフレキシブル表示装置の製造方法。
- 前記母体基板は、ガラス基板を使うことを特徴とする請求項10ないし請求項14いずれか1項に記載のフレキシブル表示装置の製造方法。
- 前記フレキシブル基板は、プラスチック基板を使うことを特徴とする請求項10ないし請求項14いずれか1項に記載のフレキシブル表示装置の製造方法。
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KR20070002084 | 2007-01-08 | ||
KR10-2007-0002084 | 2007-01-08 | ||
KR1020070044171A KR100890250B1 (ko) | 2007-01-08 | 2007-05-07 | 플렉서블 소자의 제조 방법 및 플렉서블 표시 장치의 제조방법 |
KR10-2007-0044171 | 2007-05-07 | ||
PCT/KR2008/000100 WO2008084956A1 (en) | 2007-01-08 | 2008-01-08 | Method of manufacturing a flexible device and method of manufacturing a flexible display |
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EP (1) | EP2110003B1 (ja) |
JP (1) | JP5231450B2 (ja) |
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WO (1) | WO2008084956A1 (ja) |
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JP2010062526A (ja) * | 2008-09-02 | 2010-03-18 | Samsung Electro-Mechanics Co Ltd | 薄膜素子の製造方法 |
US9397001B2 (en) | 2014-12-11 | 2016-07-19 | Panasonic Intellectual Property Management Co., Ltd. | Method for manufacturing electronic device comprising a resin substrate and an electronic component |
JP2018169556A (ja) * | 2017-03-30 | 2018-11-01 | 大日本印刷株式会社 | 表示装置形成用基板、表示装置および表示装置の製造方法 |
KR20190017884A (ko) * | 2016-06-06 | 2019-02-20 | 엔씨씨 나노, 엘엘씨 | 중합체 필름의 박리를 수행하기 위한 방법 |
JP2020107515A (ja) * | 2018-12-27 | 2020-07-09 | 大日本印刷株式会社 | 表示装置形成用基板、表示装置および表示装置の製造方法 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2091096A1 (en) * | 2008-02-15 | 2009-08-19 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Encapsulated electronic device and method of manufacturing |
KR101009415B1 (ko) * | 2008-11-18 | 2011-01-19 | 삼성모바일디스플레이주식회사 | 플라스틱 기판을 구비한 전자장치 제조방법, 이에 의해 제조된 전자장치 및 상기 제조방법에 사용되는 장치 |
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KR101108161B1 (ko) | 2009-12-24 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
KR101120139B1 (ko) | 2010-04-02 | 2012-03-22 | 경희대학교 산학협력단 | 레이저 리프트 오프를 이용한 플렉서블 반도체 소자의 제조 방법 |
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WO2012043971A2 (ko) | 2010-09-29 | 2012-04-05 | 포항공과대학교 산학협력단 | 롤 형상의 모기판을 이용한 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판 |
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KR101353993B1 (ko) * | 2011-08-22 | 2014-01-24 | 삼성디스플레이 주식회사 | 평면디스플레이용 유리 제거장치 |
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US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
TWI617437B (zh) | 2012-12-13 | 2018-03-11 | 康寧公司 | 促進控制薄片與載體間接合之處理 |
US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
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KR102108360B1 (ko) | 2013-06-19 | 2020-05-11 | 삼성디스플레이 주식회사 | 기판 처리방법 및 이를 이용해 제조된 플렉서블 디스플레이 장치 |
KR102074431B1 (ko) | 2013-07-19 | 2020-03-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조방법, 이를 이용한 유기 발광 표시 장치 |
KR102097031B1 (ko) | 2013-07-22 | 2020-04-06 | 삼성디스플레이 주식회사 | 폴더블 디스플레이 장치 및 그의 제조 방법 |
KR101580015B1 (ko) | 2013-08-30 | 2015-12-24 | 주식회사 엔씰텍 | 임시 점착/탈착층을 사용하는 플렉시블 정보 표시 소자 제조용 지지 기판, 이의 제조 방법, 그를 이용한 플렉시블 정보 표시 소자 및 그의 제조 방법 |
CN103474583A (zh) * | 2013-09-24 | 2013-12-25 | 京东方科技集团股份有限公司 | 柔性显示基板及其制备方法、柔性显示装置 |
US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
JP6770432B2 (ja) | 2014-01-27 | 2020-10-14 | コーニング インコーポレイテッド | 薄いシートの担体との制御された結合のための物品および方法 |
SG11201608442TA (en) | 2014-04-09 | 2016-11-29 | Corning Inc | Device modified substrate article and methods for making |
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US10074816B2 (en) | 2014-12-22 | 2018-09-11 | Industrial Technology Research Institute | Substrate structure for electronic device and production method thereof |
KR102385339B1 (ko) * | 2015-04-21 | 2022-04-11 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
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WO2016187186A1 (en) | 2015-05-19 | 2016-11-24 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
CN117534339A (zh) | 2015-06-26 | 2024-02-09 | 康宁股份有限公司 | 包含板材和载体的方法和制品 |
US9570356B1 (en) * | 2015-12-07 | 2017-02-14 | International Business Machines Corporation | Multiple gate length vertical field-effect-transistors |
KR102522546B1 (ko) | 2016-04-22 | 2023-04-17 | 포항공과대학교 산학협력단 | 실링 라인을 이용한 플렉서블 금속 필름의 제조 방법 |
KR102564206B1 (ko) | 2016-04-22 | 2023-08-07 | 포항공과대학교 산학협력단 | 표면에너지 조절층을 이용한 플렉서블 금속 필름의 제조 방법 |
TW202216444A (zh) | 2016-08-30 | 2022-05-01 | 美商康寧公司 | 用於片材接合的矽氧烷電漿聚合物 |
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CN106711348B (zh) * | 2016-12-29 | 2020-05-12 | 上海天马微电子有限公司 | 一种柔性有机发光显示面板的制备方法及显示装置 |
JP7431160B2 (ja) | 2017-12-15 | 2024-02-14 | コーニング インコーポレイテッド | 基板を処理するための方法および結合されたシートを含む物品を製造するための方法 |
CN110739337B (zh) * | 2019-10-24 | 2022-06-17 | 云谷(固安)科技有限公司 | 柔性基板、显示面板及显示面板的制备方法 |
CN111755632B (zh) * | 2020-07-30 | 2022-07-19 | 河南工程学院 | 一种柔性有机电致发光器件及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002202735A (ja) * | 2000-10-20 | 2002-07-19 | Toshiba Corp | 自己発光表示パネルおよびその製造方法 |
JP2003163338A (ja) * | 2001-08-22 | 2003-06-06 | Semiconductor Energy Lab Co Ltd | 剥離方法および半導体装置の作製方法 |
JP2005079395A (ja) * | 2003-09-01 | 2005-03-24 | Seiko Epson Corp | 積層体及びその製造方法、電気光学装置、電子機器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8415208B2 (en) * | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
CN101728422B (zh) | 2001-12-18 | 2012-03-28 | 精工爱普生株式会社 | 发光装置、其制造方法、电光学装置和电子仪器 |
EP1363319B1 (en) | 2002-05-17 | 2009-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of transferring an object and method of manufacturing a semiconductor device |
WO2004040648A1 (ja) * | 2002-10-30 | 2004-05-13 | Semiconductor Energy Laboratory Co., Ltd. | 半導体装置および半導体装置の作製方法 |
US20040099926A1 (en) | 2002-11-22 | 2004-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same |
JP2004349540A (ja) | 2003-05-23 | 2004-12-09 | Seiko Epson Corp | 薄膜装置の製造方法、電気光学装置、及び電子機器 |
US20050067952A1 (en) | 2003-09-29 | 2005-03-31 | Durel Corporation | Flexible, molded EL lamp |
US7825582B2 (en) | 2004-11-08 | 2010-11-02 | Kyodo Printing Co., Ltd. | Flexible display and manufacturing method thereof |
KR101299604B1 (ko) * | 2005-10-18 | 2013-08-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
-
2007
- 2007-05-07 KR KR1020070044171A patent/KR100890250B1/ko active IP Right Grant
-
2008
- 2008-01-08 EP EP08704640A patent/EP2110003B1/en active Active
- 2008-01-08 US US12/522,174 patent/US7989314B2/en active Active
- 2008-01-08 JP JP2009544806A patent/JP5231450B2/ja active Active
- 2008-01-08 WO PCT/KR2008/000100 patent/WO2008084956A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002202735A (ja) * | 2000-10-20 | 2002-07-19 | Toshiba Corp | 自己発光表示パネルおよびその製造方法 |
JP2003163338A (ja) * | 2001-08-22 | 2003-06-06 | Semiconductor Energy Lab Co Ltd | 剥離方法および半導体装置の作製方法 |
JP2005079395A (ja) * | 2003-09-01 | 2005-03-24 | Seiko Epson Corp | 積層体及びその製造方法、電気光学装置、電子機器 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010062527A (ja) * | 2008-09-02 | 2010-03-18 | Samsung Electro-Mechanics Co Ltd | 薄膜素子の製造方法 |
JP2010062526A (ja) * | 2008-09-02 | 2010-03-18 | Samsung Electro-Mechanics Co Ltd | 薄膜素子の製造方法 |
US8574389B2 (en) | 2008-09-02 | 2013-11-05 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing thin film device |
US9397001B2 (en) | 2014-12-11 | 2016-07-19 | Panasonic Intellectual Property Management Co., Ltd. | Method for manufacturing electronic device comprising a resin substrate and an electronic component |
KR20190017884A (ko) * | 2016-06-06 | 2019-02-20 | 엔씨씨 나노, 엘엘씨 | 중합체 필름의 박리를 수행하기 위한 방법 |
JP2019520250A (ja) * | 2016-06-06 | 2019-07-18 | エヌシーシー ナノ, エルエルシー | ポリマーフィルムの剥離を実施するための方法 |
KR102632428B1 (ko) | 2016-06-06 | 2024-01-31 | 엔씨씨 나노, 엘엘씨 | 중합체 필름의 박리를 수행하기 위한 방법 |
JP2018169556A (ja) * | 2017-03-30 | 2018-11-01 | 大日本印刷株式会社 | 表示装置形成用基板、表示装置および表示装置の製造方法 |
JP2020107515A (ja) * | 2018-12-27 | 2020-07-09 | 大日本印刷株式会社 | 表示装置形成用基板、表示装置および表示装置の製造方法 |
JP7253135B2 (ja) | 2018-12-27 | 2023-04-06 | 大日本印刷株式会社 | 表示装置形成用基板、表示装置および表示装置の製造方法 |
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US7989314B2 (en) | 2011-08-02 |
EP2110003B1 (en) | 2013-03-13 |
KR20080065210A (ko) | 2008-07-11 |
JP5231450B2 (ja) | 2013-07-10 |
WO2008084956A1 (en) | 2008-07-17 |
EP2110003A1 (en) | 2009-10-21 |
EP2110003A4 (en) | 2011-03-23 |
KR100890250B1 (ko) | 2009-03-24 |
US20100075447A1 (en) | 2010-03-25 |
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