JP2019520250A - ポリマーフィルムの剥離を実施するための方法 - Google Patents
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- 229920006254 polymer film Polymers 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000011358 absorbing material Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000001678 irradiating effect Effects 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000013270 controlled release Methods 0.000 claims description 6
- 230000000979 retarding effect Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001687 destabilization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
1.技術分野
本発明は、一般に熱プロセス、詳細には、ポリマーフィルムの剥離を実施するための方法に関する。
多くの種類のプリント電子構造体を、ポリマー基材上に堆積することができる。レジスタ層を有し、そして/または良好に規定された厚さを有する高解像度の電子構造体をプリントする一方法は、非常に平坦な表面上に種々の層を堆積することである。これは、ガラスなどの剛性で平坦なキャリアプレート(基板)上にポリマーフィルムを堆積し、次いで、ポリマーフィルムの上部に後続の層を形成することによってなされ得る。電子構造体が形成された後、ポリマーフィルムをキャリアプレートから除去する必要がある。
本発明の好ましい実施形態によると、光吸収性材料のピクセル化されたパターン層が、キャリアプレート上に最初に堆積され、次いで、光反射性材料層が光吸収性材料層上に堆積される。剥離されるべきポリマーフィルムは、光反射材料層上に堆積される。次に、パルス光源を利用して、ポリマーフィルムとは反対の側からキャリアプレートを通して照射して、光吸収性材料層を加熱する。光吸収性材料層の加熱された領域が、次に、キャリアプレートスタックとポリマーフィルムとの間の境界面での伝熱によってポリマーフィルムを加熱し、それによって、ポリマーフィルムの熱分解によってポリマーフィルムからガスが生成され、これは、ポリマーフィルムをキャリアプレートから解放することを可能にする。
ポリマーフィルムをキャリアプレートから除去する一方法は、ポリマーフィルムを堆積する前に、キャリアプレート上に熱解放層を最初に堆積することである。ポリマーフィルム上に電子構造体が形成された後、アセンブリ全体(キャリアプレート、熱解放層、ポリマーフィルムおよび電子構造体)が、熱解放層がポリマーフィルムを解放するに十分高い温度に加熱される。この方法の1つの欠点は、電子構造体を形成するために必要な加工温度が、熱解放層の解放温度よりも低くなければならないことである。
Claims (20)
- ポリマーフィルムの剥離を実施するための方法であって、
光学的に透明なキャリアプレートを提供するステップと、
前記キャリアプレート上に光吸収性材料層を堆積するステップと、
前記光吸収性材料層上に光反射性材料層を堆積するステップと、
前記光反射性材料層および前記光吸収性材料層上にポリマーフィルムを堆積するステップと、
前記ポリマーフィルム上に電子構造体を形成するステップと、
前記ポリマーフィルムを前記キャリアプレートから解放するために、前記光吸収性材料層を加熱するように、前記キャリアプレートにパルス光を照射するステップと
を含む、方法。 - 前記照射するステップが、前記キャリアプレートをフラッシュランプで照射することをさらに含む、請求項1に記載の方法。
- 前記照射するステップが、前記ポリマーフィルムを前記キャリアプレートから解放するために、前記光吸収性材料層と前記ポリマーフィルムとの間の境界面でガスを生成する、請求項1に記載の方法。
- 前記ガスの生成レベルが、前記光吸収性材料層と前記光反射性材料層との比を変更することによって制御される、請求項3に記載の方法。
- 前記ポリマーフィルムを堆積する前に、前記光反射性材料層上に動的解放層を堆積するステップをさらに含む、請求項1に記載の方法。
- 前記動的解放層が、金属製である、請求項5に記載の方法。
- 前記キャリアプレートが、石英製である、請求項1に記載の方法。
- 前記キャリアプレートが、ガラス製である、請求項1に記載の方法。
- 前記光吸収性材料層がパターニングされている、請求項1に記載の方法。
- 前記光吸収性材料層がパターニングされていない、請求項1に記載の方法。
- ポリマーフィルムの剥離を実施するための方法であって、
光学的に透明なキャリアプレートを提供するステップと、
前記キャリアプレート上に第1の光吸収性材料層を堆積するステップと、
前記第1の光吸収性材料層上に熱遅延層を堆積するステップと、
前記熱遅延層上に第2の光吸収性材料層を堆積するステップと、
前記第2の光吸収性材料層上に光反射性材料層を堆積するステップと、
前記光反射性材料層および前記第2の光吸収性材料層上にポリマーフィルムを堆積するステップと、
前記ポリマーフィルム上に電子構造体を形成するステップと、
前記ポリマーフィルムを前記キャリアプレートから解放するために、前記光吸収性材料層を加熱するように、前記キャリアプレートをパルス光で照射するステップと
を含む、方法。 - 前記照射するステップが、前記キャリアプレートをフラッシュランプで照射することをさらに含む、請求項11に記載の方法。
- 前記ポリマーフィルムを堆積する前に、前記光反射性材料層上に表面張力制御解放層を堆積するステップをさらに含む、請求項11に記載の方法。
- 前記表面張力制御解放層が、セラミック製である、請求項13に記載の方法。
- 前記ポリマーフィルムを堆積する前に、前記表面張力制御解放層上に動的解放層を堆積するステップをさらに含む、請求項13に記載の方法。
- 前記動的解放層が、金属製である、請求項15に記載の方法。
- 前記光吸収性材料層の1つがパターニングされている、請求項11に記載の方法。
- 前記キャリアプレートが、石英製である、請求項11に記載の方法。
- 前記キャリアプレートが、ガラス製である、請求項11に記載の方法。
- 前記熱遅延層が、酸化ケイ素製である、請求項11に記載の方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125929A (ja) * | 1996-08-27 | 1998-05-15 | Seiko Epson Corp | 剥離方法 |
JP2010516021A (ja) * | 2007-01-08 | 2010-05-13 | ポステック アカデミー‐インダストリー ファウンデーション | フレキシブル素子の製造方法及びフレキシブル表示装置の製造方法 |
JP2014120664A (ja) * | 2012-12-18 | 2014-06-30 | Dainippon Screen Mfg Co Ltd | 剥離補助方法および剥離補助装置 |
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CN2270033Y (zh) * | 1996-07-25 | 1997-12-10 | 大兴安岭林业管理局林业科学研究所 | 苗木保鲜包装袋 |
CN1143394C (zh) * | 1996-08-27 | 2004-03-24 | 精工爱普生株式会社 | 剥离方法、溥膜器件的转移方法和薄膜器件 |
US6114088A (en) * | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
US6387829B1 (en) * | 1999-06-18 | 2002-05-14 | Silicon Wafer Technologies, Inc. | Separation process for silicon-on-insulator wafer fabrication |
JP2004253461A (ja) * | 2003-02-18 | 2004-09-09 | Seiko Epson Corp | 半導体基板の製造方法 |
JP3925489B2 (ja) | 2003-11-17 | 2007-06-06 | セイコーエプソン株式会社 | 半導体装置の製造方法及びエレクトロルミネッセンス装置の製造方法 |
JP4739186B2 (ja) * | 2004-03-12 | 2011-08-03 | 三菱製紙株式会社 | 耐熱性不織布 |
US7132140B2 (en) | 2004-05-27 | 2006-11-07 | Eastman Kodak Company | Plural metallic layers in OLED donor |
JP2010034217A (ja) * | 2008-07-28 | 2010-02-12 | Hitachi Ltd | 有機薄膜トランジスタの製造方法 |
JP6126360B2 (ja) * | 2012-11-26 | 2017-05-10 | 株式会社Screenホールディングス | 剥離補助方法 |
JP6067419B2 (ja) * | 2013-02-28 | 2017-01-25 | 新日鉄住金化学株式会社 | 積層部材の製造方法 |
KR20150007740A (ko) | 2013-07-12 | 2015-01-21 | 삼성디스플레이 주식회사 | 전사용 도너 기판 및 유기 발광 표시 장치의 제조 방법 |
US10011104B2 (en) * | 2016-06-06 | 2018-07-03 | Ncc Nano, Llc | Method for performing delamination of a polymer film |
-
2016
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10125929A (ja) * | 1996-08-27 | 1998-05-15 | Seiko Epson Corp | 剥離方法 |
JP2010516021A (ja) * | 2007-01-08 | 2010-05-13 | ポステック アカデミー‐インダストリー ファウンデーション | フレキシブル素子の製造方法及びフレキシブル表示装置の製造方法 |
JP2014120664A (ja) * | 2012-12-18 | 2014-06-30 | Dainippon Screen Mfg Co Ltd | 剥離補助方法および剥離補助装置 |
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WO2017213623A1 (en) | 2017-12-14 |
US11230036B2 (en) | 2022-01-25 |
CA3026614C (en) | 2021-08-03 |
CN109715386B (zh) | 2022-06-10 |
JP6830279B2 (ja) | 2021-02-17 |
EP3711948B1 (en) | 2022-01-12 |
KR20190017884A (ko) | 2019-02-20 |
KR102632428B1 (ko) | 2024-01-31 |
EP3465778A1 (en) | 2019-04-10 |
US20190299496A1 (en) | 2019-10-03 |
CA3026614A1 (en) | 2017-12-14 |
EP3465778B1 (en) | 2021-05-12 |
EP3465778A4 (en) | 2020-01-22 |
CN109715386A (zh) | 2019-05-03 |
EP3711948A1 (en) | 2020-09-23 |
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