JP2010514197A - 放熱パターンを有する半導体集積回路 - Google Patents
放熱パターンを有する半導体集積回路 Download PDFInfo
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- JP2010514197A JP2010514197A JP2009542630A JP2009542630A JP2010514197A JP 2010514197 A JP2010514197 A JP 2010514197A JP 2009542630 A JP2009542630 A JP 2009542630A JP 2009542630 A JP2009542630 A JP 2009542630A JP 2010514197 A JP2010514197 A JP 2010514197A
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- Prior art keywords
- integrated circuit
- semiconductor integrated
- output terminal
- pad
- heat dissipation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (6)
- 放熱パターンを有する出力端子に直接接続された1個以上の出力パッドと、
電力を供給する電源パッドと、
電力を供給するメタルライン又は内部機能ブロックの内部出力端子に接続された1個以上のダミーパッドと
を備え、
前記放熱パターンは、前記出力端子において、複数のユニット接点又は前記ユニット接点の2個以上の和に近い又は前記和より大きい面積を有する複数のストリップ接点を含むことを特徴とする半導体集積回路。 - 前記ダミーパッドは、半導体集積回路内で、前記メタルライン及び前記内部出力端子と直接接続されることを特徴とする請求項1に記載の半導体集積回路。
- 1個以上のユニット接点を有する出力端子又は前記ユニット接点の2個以上の和に近い又は前記和より大きい面積を有する1個以上のストリップ接点を有する出力端子に接続された1個以上の出力パッド、半導体集積回路に電力を供給する1個以上の電源パッド、及び半導体集積回路に電力を供給するメタルライン又は半導体集積回路内に配置された内部機能ブロックの出力端子に接続された1個以上のダミーパッドを含む半導体集積回路と、
前記出力パッド、前記電源パッドと前記ダミーパッドに接続された1個以上の放熱ユニットと
を備えることを特徴とするシステムボード。 - 同じ電気的特性を有する、前記電源パッドと前記ダミーパッドに接続された放熱ユニットが、システムボード上で互いに接続されることを特徴とする請求項3に記載のシステムボード。
- 前記放熱ユニット、前記半導体集積回路の入出力パッド、前記電源パッドと前記ダミーパッドをシステムボードに電気的に接続するために使用される材料が、前記半導体集積回路で使用される前記メタルラインの材料と同じ成分を含むことを特徴とする請求項3に記載のシステムボード。
- 前記放熱ユニットの成分は銅であることを特徴とする請求項5に記載のシステムボード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060131969A KR100798895B1 (ko) | 2006-12-21 | 2006-12-21 | 방열패턴을 구비하는 반도체 집적회로 |
PCT/KR2007/005979 WO2008075838A1 (en) | 2006-12-21 | 2007-11-26 | Semiconductor integrated circuit having heat release pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010514197A true JP2010514197A (ja) | 2010-04-30 |
Family
ID=39219596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009542630A Pending JP2010514197A (ja) | 2006-12-21 | 2007-11-26 | 放熱パターンを有する半導体集積回路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100027223A1 (ja) |
JP (1) | JP2010514197A (ja) |
KR (1) | KR100798895B1 (ja) |
CN (1) | CN101563766B (ja) |
TW (1) | TWI350580B (ja) |
WO (1) | WO2008075838A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5067295B2 (ja) * | 2008-07-17 | 2012-11-07 | 大日本印刷株式会社 | センサ及びその製造方法 |
KR101113031B1 (ko) | 2009-09-25 | 2012-02-27 | 주식회사 실리콘웍스 | 드라이버 집적회로 칩의 패드 배치 구조 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61125047A (ja) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | 半導体集積回路装置 |
JPH10116990A (ja) * | 1996-10-09 | 1998-05-06 | Seiko Epson Corp | 薄膜トランジスタ及びそれを用いた液晶表示装置 |
JPH10233473A (ja) * | 1996-10-16 | 1998-09-02 | Nkk Corp | 半導体素子の放熱構造とその放熱方法 |
JP2005158777A (ja) * | 2003-11-20 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US5384487A (en) * | 1993-05-05 | 1995-01-24 | Lsi Logic Corporation | Off-axis power branches for interior bond pad arrangements |
KR0170023B1 (ko) * | 1994-12-16 | 1999-02-01 | 황인길 | 반도체 패키지 |
US5650595A (en) * | 1995-05-25 | 1997-07-22 | International Business Machines Corporation | Electronic module with multiple solder dams in soldermask window |
US6031283A (en) * | 1996-09-09 | 2000-02-29 | Intel Corporation | Integrated circuit package |
KR19980045612A (ko) * | 1996-12-10 | 1998-09-15 | 김광호 | 냉각부를 가지는 반도체 칩 |
JP3779789B2 (ja) * | 1997-01-31 | 2006-05-31 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
KR100483403B1 (ko) * | 1997-11-27 | 2005-08-10 | 삼성전자주식회사 | 표시장치용인쇄회로기판의패드패턴 |
TW462121B (en) * | 2000-09-19 | 2001-11-01 | Siliconware Precision Industries Co Ltd | Heat sink type ball grid array package |
US6597059B1 (en) * | 2001-04-04 | 2003-07-22 | Amkor Technology, Inc. | Thermally enhanced chip scale lead on chip semiconductor package |
KR20030006472A (ko) * | 2001-07-13 | 2003-01-23 | 엘지이노텍 주식회사 | 반도체 패키지의 방열 장치 |
KR100508682B1 (ko) * | 2002-11-20 | 2005-08-17 | 삼성전자주식회사 | 더미 와이어를 이용한 열방출형 적층 칩 패키지 |
US7109573B2 (en) * | 2003-06-10 | 2006-09-19 | Nokia Corporation | Thermally enhanced component substrate |
US6954360B2 (en) * | 2003-08-22 | 2005-10-11 | Nokia Corporation | Thermally enhanced component substrate: thermal bar |
US7190056B2 (en) * | 2004-03-31 | 2007-03-13 | Nokia Corporation | Thermally enhanced component interposer: finger and net structures |
JP4931908B2 (ja) * | 2006-03-14 | 2012-05-16 | シャープ株式会社 | 回路基板、電子回路装置及び表示装置 |
KR100798896B1 (ko) * | 2007-06-07 | 2008-01-29 | 주식회사 실리콘웍스 | 반도체 칩의 패드 배치 구조 |
KR101361828B1 (ko) * | 2007-09-03 | 2014-02-12 | 삼성전자주식회사 | 반도체 디바이스, 반도체 패키지, 스택 모듈, 카드, 시스템및 반도체 디바이스의 제조 방법 |
US7787252B2 (en) * | 2008-12-04 | 2010-08-31 | Lsi Corporation | Preferentially cooled electronic device |
-
2006
- 2006-12-21 KR KR1020060131969A patent/KR100798895B1/ko active IP Right Grant
-
2007
- 2007-11-26 JP JP2009542630A patent/JP2010514197A/ja active Pending
- 2007-11-26 CN CN2007800446735A patent/CN101563766B/zh active Active
- 2007-11-26 WO PCT/KR2007/005979 patent/WO2008075838A1/en active Application Filing
- 2007-11-26 US US12/520,088 patent/US20100027223A1/en not_active Abandoned
- 2007-11-27 TW TW096145014A patent/TWI350580B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61125047A (ja) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | 半導体集積回路装置 |
JPH10116990A (ja) * | 1996-10-09 | 1998-05-06 | Seiko Epson Corp | 薄膜トランジスタ及びそれを用いた液晶表示装置 |
JPH10233473A (ja) * | 1996-10-16 | 1998-09-02 | Nkk Corp | 半導体素子の放熱構造とその放熱方法 |
JP2005158777A (ja) * | 2003-11-20 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100798895B1 (ko) | 2008-01-29 |
US20100027223A1 (en) | 2010-02-04 |
CN101563766B (zh) | 2010-12-01 |
TW200830492A (en) | 2008-07-16 |
CN101563766A (zh) | 2009-10-21 |
TWI350580B (en) | 2011-10-11 |
WO2008075838A1 (en) | 2008-06-26 |
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