JP2010510664A - ダイの裏面に接点を形成する方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/0556—Disposition
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- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (20)
- 半導体素子を形成する方法であって、
第1の主要表面と第2の主要表面とを有する第1の半導体基板上に第1の能動回路を形成する工程であって、第1の能動回路は第1の主要表面上に形成される工程、
第1の半導体基板内に、第1の能動回路から第1の半導体基板の第2の主要表面まで延びる第1のビアを形成する工程、および
第2の主要表面上に第1のビアに隣接して第1の誘電体層を選択的に形成する工程、
を含む方法。 - 前記第1の誘電体層を選択的に形成する工程は、窒素とシリコンを含む誘電体層を選択的に形成することを含む請求項1に記載の方法。
- 前記第1の半導体基板内に第1のビアを形成する工程は、
半導体基板内に溝を形成すること、
溝内に導電材料を形成すること、および
平坦化およびエッチングから選択されたプロセスからなる、第1の半導体基板の一部分を除去して導電材料を露出させること、
を含む請求項1に記載の方法。 - 前記第1の誘電体層を選択的に形成する工程は、
窒素を含むプラズマ環境に第1の半導体基板を曝露すること、および
プラズマを第1の半導体基板と反応させること、
を含む請求項1に記載の方法。 - 前記プラズマ環境はアンモニア(NH3)を含む請求項4に記載の方法。
- 前記プラズマ環境はアルゴンをさらに含む請求項5に記載の方法。
- 前記プラズマ環境は窒素と水素を含む請求項4に記載の方法。
- 前記プラズマの第1の半導体基板との反応が、約300℃より高い温度で起こる請求項4に記載の方法。
- 前記プラズマの第1の半導体基板との反応が、約13.3Pa(約100mTorr)未満の圧力で起こる請求項8に記載の方法。
- 前記第1の誘電体層を選択的に形成する工程の後に、導電材料に結合されたバンプを形成する工程をさらに含む請求項1に記載の方法。
- 前記第1の半導体素子のバンプを第2の半導体素子に接続する工程をさらに含む請求項10に記載の方法。
- 第3の主要表面と第4の主要表面とを有する第2の半導体基板上に第2の能動回路を形成する工程であって、第2の能動回路は第3の主要表面上に形成される工程、
第2の半導体基板内に、第2の能動回路から第2の半導体基板の第4の主要表面まで延びる第2のビアを形成する工程、および
第4の主要表面上に窒素とシリコンを含む第2の誘電体層を選択的に形成する工程、をさらに含み、
前記第1の半導体素子のバンプを第2の半導体素子に接続する工程が、前記第2の誘電体層を形成した後で行われる請求項11に記載の方法。 - 半導体素子を形成する方法であって、
半導体基板を提供する工程であって、半導体基板は該半導体基板上に能動回路と、半導体基板内に半導体基板の主要表面上に露出されたビアとを備えている工程、および
半導体基板の主要表面上に前記露出されたビアに隣接して誘電体層を選択的に形成する工程、
を含む方法。 - 前記誘電体層を選択的に形成する工程は、
窒素を含むプラズマ環境に半導体基板を曝露すること;および
プラズマを半導体基板と反応させること、
を含む請求項13に記載の方法。 - 前記プラズマ環境はアンモニア(NH3)を含む請求項14に記載の方法。
- 前記プラズマ環境はさらにアルゴンを含む請求項15に記載の方法。
- 前記プラズマ環境は窒素と水素を含む請求項14に記載の方法。
- 前記プラズマの半導体基板との反応が、約300℃より高い温度で起こる請求項14に記載の方法。
- 前記プラズマの半導体基板との反応が、約13.3Pa(約100mTorr)未満の圧力で起こる請求項18に記載の方法。
- 半導体素子を形成する方法であって、
半導体基板を提供する工程であって、半導体基板は半導体基板上に能動回路と、半導体基板内にビアとを備えている工程、
半導体基板の厚さを減少させて半導体基板の主要表面上にビアを露出させる工程、および
半導体基板の主要表面上に前記露出されたビアに隣接して、窒素とシリコンを含む誘電体層を選択的に形成する工程、
を含む方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/562,161 US7544605B2 (en) | 2006-11-21 | 2006-11-21 | Method of making a contact on a backside of a die |
PCT/US2007/079727 WO2008063745A1 (en) | 2006-11-21 | 2007-09-27 | Method of making a contact on a backside of a die |
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JP2010510664A true JP2010510664A (ja) | 2010-04-02 |
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JP2009537253A Pending JP2010510664A (ja) | 2006-11-21 | 2007-09-27 | ダイの裏面に接点を形成する方法 |
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Country | Link |
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US (1) | US7544605B2 (ja) |
EP (1) | EP2087508A4 (ja) |
JP (1) | JP2010510664A (ja) |
KR (1) | KR20090091718A (ja) |
CN (1) | CN101523555A (ja) |
TW (1) | TW200830516A (ja) |
WO (1) | WO2008063745A1 (ja) |
Families Citing this family (11)
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US7973416B2 (en) * | 2008-05-12 | 2011-07-05 | Texas Instruments Incorporated | Thru silicon enabled die stacking scheme |
US8513119B2 (en) | 2008-12-10 | 2013-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming bump structure having tapered sidewalls for stacked dies |
US20100171197A1 (en) | 2009-01-05 | 2010-07-08 | Hung-Pin Chang | Isolation Structure for Stacked Dies |
TWI380421B (en) * | 2009-03-13 | 2012-12-21 | Advanced Semiconductor Eng | Method for making silicon wafer having through via |
US8405197B2 (en) * | 2009-03-25 | 2013-03-26 | Stats Chippac Ltd. | Integrated circuit packaging system with stacked configuration and method of manufacture thereof |
CN101853855B (zh) * | 2009-04-03 | 2012-03-14 | 日月光半导体制造股份有限公司 | 具有穿导孔的硅晶片的制造方法 |
US8791549B2 (en) | 2009-09-22 | 2014-07-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer backside interconnect structure connected to TSVs |
US8466059B2 (en) * | 2010-03-30 | 2013-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer interconnect structure for stacked dies |
US8900994B2 (en) | 2011-06-09 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for producing a protective structure |
TWI503934B (zh) | 2013-05-09 | 2015-10-11 | Advanced Semiconductor Eng | 半導體元件及其製造方法及半導體封裝結構 |
FR3069703B1 (fr) * | 2017-07-27 | 2020-01-24 | Stmicroelectronics (Crolles 2) Sas | Puce electronique |
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WO2006019156A1 (ja) * | 2004-08-20 | 2006-02-23 | Zycube Co., Ltd. | 三次元積層構造を持つ半導体装置の製造方法 |
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JPS5845177B2 (ja) * | 1979-03-09 | 1983-10-07 | 富士通株式会社 | 半導体表面絶縁膜の形成法 |
EP0073487B1 (en) | 1981-08-31 | 1988-07-20 | Kabushiki Kaisha Toshiba | Method for manufacturing three-dimensional semiconductor device |
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- 2007-09-27 JP JP2009537253A patent/JP2010510664A/ja active Pending
- 2007-09-27 WO PCT/US2007/079727 patent/WO2008063745A1/en active Application Filing
- 2007-09-27 CN CNA2007800376431A patent/CN101523555A/zh active Pending
- 2007-09-27 EP EP07843360A patent/EP2087508A4/en not_active Withdrawn
- 2007-10-16 TW TW096138744A patent/TW200830516A/zh unknown
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US20080119046A1 (en) | 2008-05-22 |
US7544605B2 (en) | 2009-06-09 |
KR20090091718A (ko) | 2009-08-28 |
EP2087508A4 (en) | 2011-10-19 |
WO2008063745A1 (en) | 2008-05-29 |
EP2087508A1 (en) | 2009-08-12 |
CN101523555A (zh) | 2009-09-02 |
TW200830516A (en) | 2008-07-16 |
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