JP2010509779A - 太陽電池吸収体を形成するための前駆体膜のオープンリール式反応 - Google Patents

太陽電池吸収体を形成するための前駆体膜のオープンリール式反応 Download PDF

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JP2010509779A
JP2010509779A JP2009536531A JP2009536531A JP2010509779A JP 2010509779 A JP2010509779 A JP 2010509779A JP 2009536531 A JP2009536531 A JP 2009536531A JP 2009536531 A JP2009536531 A JP 2009536531A JP 2010509779 A JP2010509779 A JP 2010509779A
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ベイソル、ブレント・エム．
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ソロパワー、インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
JP2009536531A 2006-11-10 2007-11-12 太陽電池吸収体を形成するための前駆体膜のオープンリール式反応 Pending JP2010509779A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86538506P 2006-11-10 2006-11-10
PCT/US2007/084432 WO2008085604A2 (fr) 2006-11-10 2007-11-12 Réaction inter-bobine d'un film précurseur pour formation d'un absorbeur solaire

Publications (1)

Publication Number Publication Date
JP2010509779A true JP2010509779A (ja) 2010-03-25

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JP2009536531A Pending JP2010509779A (ja) 2006-11-10 2007-11-12 太陽電池吸収体を形成するための前駆体膜のオープンリール式反応

Country Status (6)

Country Link
EP (1) EP2102898A4 (fr)
JP (1) JP2010509779A (fr)
KR (1) KR20090110293A (fr)
CN (1) CN101578707B (fr)
TW (1) TW200832726A (fr)
WO (1) WO2008085604A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101373314B1 (ko) 2012-12-31 2014-03-12 (주)피앤테크 태양전지 웨이퍼용 도핑 프로세스튜브의 배기 응축 장치
JP2015514323A (ja) * 2012-04-02 2015-05-18 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 薄膜太陽電池モジュールの製造方法、並びに、当該製造方法によって製造される薄膜太陽電池モジュール
JP2015515743A (ja) * 2012-02-29 2015-05-28 アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー ＣｕＩｎＳｅ２及びＣｕ（Ｉｎ，Ｇａ）Ｓｅ２被膜を用いて太陽電池を形成する為のシステム及び方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100051586A (ko) * 2007-09-11 2010-05-17 센트로테에름 포토볼타익스 아게 금속 전구체층을 반도체층으로 열적 변환하기 위한 방법 및 장치, 그리고 태양광 모듈
US8163090B2 (en) 2007-12-10 2012-04-24 Solopower, Inc. Methods structures and apparatus to provide group VIA and IA materials for solar cell absorber formation
US8323408B2 (en) 2007-12-10 2012-12-04 Solopower, Inc. Methods and apparatus to provide group VIA materials to reactors for group IBIIIAVIA film formation
AU2009319350B2 (en) * 2008-11-28 2015-10-29 Volker Probst Method for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulfur, in particular flat substrates
DE102009009022A1 (de) * 2009-02-16 2010-08-26 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur Beschichtung von flachen Substraten mit Chalkogenen
TWI509107B (zh) * 2009-03-06 2015-11-21 Centrotherm Photovoltaics Ag 利用氧族元素源將金屬先驅物薄膜熱轉變成半導體薄膜之方法及裝置
DE102009011496A1 (de) * 2009-03-06 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung
DE102009049570B3 (de) * 2009-10-15 2011-02-17 Fhr Anlagenbau Gmbh Anordnung zur Gasseparation und deren Verwendung
TWI398013B (zh) * 2009-12-18 2013-06-01 Jenn Feng New Energy Co Ltd Method and system for forming non-vacuum copper indium gallium sulphide selenium absorption layer and cadmium sulfide buffer layer
JP2013529378A (ja) * 2010-04-19 2013-07-18 韓国生産技術研究院 太陽電池の製造方法
KR101522128B1 (ko) * 2011-03-10 2015-05-20 쌩-고벵 글래스 프랑스 5원 화합물 반도체 ｃｚｔｓｓｅ의 제조 방법, 및 박막 태양광 전지
JP2012222157A (ja) * 2011-04-08 2012-11-12 Hitachi Kokusai Electric Inc 基板処理装置、及び、太陽電池の製造方法
CN103361603A (zh) * 2012-03-29 2013-10-23 常熟卓辉光电科技有限公司 一种半导体薄膜材料的真空蒸发设备及oled导电层的制备方法
KR101461315B1 (ko) * 2012-06-19 2014-11-12 가부시키가이샤 스크린 홀딩스 열처리 장치 및 열처리 방법
ES2859505T3 (es) * 2012-07-09 2021-10-04 Cnbm Bengbu Design & Res Institute For Glass Industry Co Ltd Instalación y método para procesar sustratos
DE102014116696B4 (de) * 2014-11-14 2016-10-20 Von Ardenne Gmbh Vakuumkammer und Verfahren zum Betreiben einer Vakuumprozessieranlage

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480371A (ja) * 1990-07-24 1992-03-13 Canon Inc 堆積膜形成方法及び装置
JPH06204536A (ja) * 1992-12-28 1994-07-22 Canon Inc 太陽電池の製造方法及びそれに供されるスパッタリング装置
JPH07235504A (ja) * 1993-12-28 1995-09-05 Canon Inc 堆積膜形成方法及び堆積膜形成装置
JPH11135811A (ja) * 1997-10-28 1999-05-21 Yazaki Corp Ｃｉｓ系太陽電池モジュール及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723507A (en) * 1986-01-16 1988-02-09 Energy Conversion Devices, Inc. Isolation passageway including annular region
JPH02148715A (ja) * 1988-11-29 1990-06-07 Canon Inc 半導体デバイスの連続形成装置
US5578503A (en) * 1992-09-22 1996-11-26 Siemens Aktiengesellschaft Rapid process for producing a chalcopyrite semiconductor on a substrate
JP3332700B2 (ja) * 1995-12-22 2002-10-07 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing
WO2002084708A2 (fr) * 2001-04-16 2002-10-24 Basol Bulent M Procede de formation d'une couche mince de compose semiconducteur destinee a la fabrication d'un dispositif electronique, et couche mince produite par ledit procede
WO2004032189A2 (fr) * 2002-09-30 2004-04-15 Miasolé Appareil et procede de fabrication conçus pour produire a grande echelle de cellules solaires a film mince

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480371A (ja) * 1990-07-24 1992-03-13 Canon Inc 堆積膜形成方法及び装置
JPH06204536A (ja) * 1992-12-28 1994-07-22 Canon Inc 太陽電池の製造方法及びそれに供されるスパッタリング装置
JPH07235504A (ja) * 1993-12-28 1995-09-05 Canon Inc 堆積膜形成方法及び堆積膜形成装置
JPH11135811A (ja) * 1997-10-28 1999-05-21 Yazaki Corp Ｃｉｓ系太陽電池モジュール及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015515743A (ja) * 2012-02-29 2015-05-28 アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー ＣｕＩｎＳｅ２及びＣｕ（Ｉｎ，Ｇａ）Ｓｅ２被膜を用いて太陽電池を形成する為のシステム及び方法
JP2015514323A (ja) * 2012-04-02 2015-05-18 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 薄膜太陽電池モジュールの製造方法、並びに、当該製造方法によって製造される薄膜太陽電池モジュール
KR101373314B1 (ko) 2012-12-31 2014-03-12 (주)피앤테크 태양전지 웨이퍼용 도핑 프로세스튜브의 배기 응축 장치

Also Published As

Publication number Publication date
CN101578707B (zh) 2012-08-22
CN101578707A (zh) 2009-11-11
WO2008085604B1 (fr) 2008-12-24
WO2008085604A3 (fr) 2008-10-16
KR20090110293A (ko) 2009-10-21
TW200832726A (en) 2008-08-01
EP2102898A4 (fr) 2011-06-29
WO2008085604A2 (fr) 2008-07-17
EP2102898A2 (fr) 2009-09-23

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