JP2010508446A - プラズマからの非晶質材料の蒸着による勾配付きバンドギャップを有する膜の形成方法 - Google Patents
プラズマからの非晶質材料の蒸着による勾配付きバンドギャップを有する膜の形成方法 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 42
- 230000008021 deposition Effects 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000007789 gas Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000002243 precursor Substances 0.000 claims abstract description 23
- 230000008859 change Effects 0.000 claims abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 26
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910052990 silicon hydride Inorganic materials 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 77
- 210000002381 plasma Anatomy 0.000 description 42
- 238000000151 deposition Methods 0.000 description 38
- 239000010408 film Substances 0.000 description 33
- 229910000077 silane Inorganic materials 0.000 description 13
- 230000007423 decrease Effects 0.000 description 10
- 230000005284 excitation Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000005405 multipole Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- -1 SiH 4 Chemical class 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002900 effect on cell Effects 0.000 description 1
- 230000005279 excitation period Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 210000003976 gap junction Anatomy 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- MECHNRXZTMCUDQ-RKHKHRCZSA-N vitamin D2 Chemical compound C1(/[C@@H]2CC[C@@H]([C@]2(CCC1)C)[C@H](C)/C=C/[C@H](C)C(C)C)=C\C=C1\C[C@@H](O)CCC1=C MECHNRXZTMCUDQ-RKHKHRCZSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
【選択図】図3
Description
B=2πmf/e (1)
ここでmとeはそれぞれ質量と電子の電荷である。
、p.1133-1136参照)。真性層の軸に沿ってギャップが最小となる領域の位置をずらすとわかるように、バンドギャップの断面形はセルの性能に大きな影響を及ぼしている。勾配の断面形は曲線因子と開路電圧の両方に非常に大きな影響を及ぼす。図12に示すように、非対称v型のp-iインターフェース近くに最小バンドギャップを有するものが最適性能を示すことがわかった。
(i)これらは付加的な再結合中心としての役割を果たし、これにより電子および正孔の寿命を減らし、よってこれらキャリアの分散距離を減少させる。
(ii)これらはセル内でフィールド分布を移動させ、中央での電界を減らし、PIN a-Si:Hセルのpおよびnインターフェースで電界をわずかに増やす。
(i)厚さ100〜150nmの一定の低バンドギャップ(好ましくは1.65eV)層を350°Cで蒸着する。
(ii)蒸着温度を100°C下げ、希釈率(つまり、H2/SiH4)を増やすことにより120〜150nmの間でバンドギャップが約1.8eVに変えられた勾配付きバンドギャップ領域が得られる。
(iii)その後から続くn層と、100〜150nmの一定のバンドギャップ真性層領域がいずれも275°Cで蒸着される。
セル1:一定のシラン流量(90秒の間で100sccm(1.69x10-2Pa・m3/sec))で真性層を蒸着した。
セル2:始めの間は真性層を100sccm(1.69x10-2Pa・m3/sec)で蒸着し、その後シラン流量を15秒毎に10sccm(1.69x10-3Pa・m3/sec)ずつ、30sccm(5.07x10-3Pa・m3/sec)まで減少させた(つまり、総蒸着時間は120秒)。
セル3:始めの間は真性層を100sccm(1.69x10-2Pa・m3/sec)で蒸着し、その後シラン流量を20秒毎に10sccm(1.69x10-3Pa・m3/sec)ずつ、30sccm(5.07x10-3Pa・m3/sec)まで減少させた(つまり、総蒸着時間は160秒)。
従って、セル2および3は本発明による勾配を付けたが、セル1は本発明による勾配を付けなかった。
セル5:始めの間は真性層を100sccm(1.69x10-2Pa・m3/sec)で蒸着し、シラン流動速度を10sccm(1.69x10-3Pa・m3/sec)ずつ減少させた。
セル6:真性層はセル5と同じであるが100sccm(1.69x10-2Pa・m3/sec)での初期ステップをより長くした。
セル7:真性層はセル5と同じであるが100sccm(1.69x10-2Pa・m3/sec)での初期ステップをより短くした。
Claims (13)
- 容器内に基板を配置することと、
ある流動速度で膜用前駆ガスを前記容器内に連続して導入することと、
前記容器内を低圧にすべく前記容器から未反応および解離ガスを抽出することと、
分散型電子サイクロトロン共鳴(DECR)によりプラズマを前記容器内で生成すべく前記プラズマから材料を前記基板上に蒸着するために前記容器内のガスにマイクロ波エネルギーを導入すること
を備えるプラズマからの蒸着により基板上に非晶質材料の膜を形成する方法であって、
前記蒸着した材料の厚さにわたってバンドギャップを変化させるべく前記流動速度を材料の蒸着中に変える
方法。 - 前記蒸着した膜が水素化非晶質シリコンである請求項1に記載の方法。
- 前記膜用前駆ガスが水素化珪素を含む請求項2に記載の方法。
- 前記膜用前駆ガスがSiH4を含む請求項3に記載の方法。
- 前記蒸着した膜がアモルファスシリコン合金である請求項1に記載の方法。
- 前記プラズマが二次元ネットワークを形成するように配置した装置で生成されている請求項1から5のいずれかに記載の方法。
- 前記プラズマがマトリックスDECRで生成されている請求項6に記載の方法。
- 各層が先の層よりもより大なるバンドギャップを有する、複数の層を前記基板上に連続蒸着する請求項1から7のいずれかに記載の方法。
- 各層が先の層よりもより小なるバンドギャップを有する、複数の層を前記基板上に連続蒸着する請求項1から7のいずれかに記載の方法。
- 蒸着する第1および最終層の両方から離間した点で前記バンドギャップが最小値を有するように前記各層を蒸着する請求項1から7のいずれかに記載の方法。
- 前記流動速度を無段式に連続して変化させることにより、その厚さの全体または一部を通して前記膜の前記バンドギャップを連続また無段階に変化させる請求項1から7のいずれかに記載の方法。
- 太陽電池の製作方法であって、nドープ材料の基板上に請求項1から11のいずれかに記載の方法で非晶質材料の膜が形成し、pドープ材料層が前記非晶質材料の膜上に形成する。
- 太陽電池の製作方法であって、pドープ材料の基板上に請求項1から12のいずれかに記載の方法で非晶質材料の膜が形成し、nドープ材料層が前記非晶質材料の膜上に形成する。
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EP06301117A EP1918966A1 (en) | 2006-11-02 | 2006-11-02 | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
EP06301117.5 | 2006-11-02 | ||
PCT/EP2007/009305 WO2008052705A1 (en) | 2006-11-02 | 2007-10-26 | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
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JP5350261B2 JP5350261B2 (ja) | 2013-11-27 |
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US (1) | US7964438B2 (ja) |
EP (2) | EP1918966A1 (ja) |
JP (1) | JP5350261B2 (ja) |
KR (1) | KR101484152B1 (ja) |
CN (1) | CN101681784B (ja) |
WO (1) | WO2008052705A1 (ja) |
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EP1918965A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method and apparatus for forming a film by deposition from a plasma |
EP1918967B1 (en) | 2006-11-02 | 2013-12-25 | Dow Corning Corporation | Method of forming a film by deposition from a plasma |
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- 2006-11-02 EP EP06301117A patent/EP1918966A1/en not_active Withdrawn
-
2007
- 2007-10-26 US US12/447,842 patent/US7964438B2/en not_active Expired - Fee Related
- 2007-10-26 CN CN2007800407957A patent/CN101681784B/zh not_active Expired - Fee Related
- 2007-10-26 KR KR20097011240A patent/KR101484152B1/ko not_active IP Right Cessation
- 2007-10-26 JP JP2009535598A patent/JP5350261B2/ja not_active Expired - Fee Related
- 2007-10-26 EP EP07819352.1A patent/EP2080216B1/en not_active Not-in-force
- 2007-10-26 WO PCT/EP2007/009305 patent/WO2008052705A1/en active Application Filing
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US7964438B2 (en) | 2011-06-21 |
EP2080216A1 (en) | 2009-07-22 |
EP2080216B1 (en) | 2015-02-11 |
US20100062561A1 (en) | 2010-03-11 |
CN101681784B (zh) | 2011-10-19 |
JP5350261B2 (ja) | 2013-11-27 |
WO2008052705A8 (en) | 2009-10-29 |
EP1918966A1 (en) | 2008-05-07 |
CN101681784A (zh) | 2010-03-24 |
KR101484152B1 (ko) | 2015-01-27 |
KR20090092274A (ko) | 2009-08-31 |
WO2008052705A1 (en) | 2008-05-08 |
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