JP2010507085A5 - - Google Patents
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- Publication number
- JP2010507085A5 JP2010507085A5 JP2009532800A JP2009532800A JP2010507085A5 JP 2010507085 A5 JP2010507085 A5 JP 2010507085A5 JP 2009532800 A JP2009532800 A JP 2009532800A JP 2009532800 A JP2009532800 A JP 2009532800A JP 2010507085 A5 JP2010507085 A5 JP 2010507085A5
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- substrate
- sensing element
- cap
- sensor array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 claims 116
- 239000000758 substrate Substances 0.000 claims 94
- 230000003287 optical effect Effects 0.000 claims 23
- 238000009413 insulation Methods 0.000 claims 11
- 230000005540 biological transmission Effects 0.000 claims 10
- 238000005530 etching Methods 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000011179 visual inspection Methods 0.000 claims 7
- 239000012212 insulator Substances 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 4
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 230000005670 electromagnetic radiation Effects 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 238000012986 modification Methods 0.000 claims 2
- 230000004048 modification Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000009529 body temperature measurement Methods 0.000 claims 1
- 238000004891 communication Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000012545 processing Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000001228 spectrum Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/584,121 | 2006-10-20 | ||
| US11/584,121 US7718967B2 (en) | 2005-01-26 | 2006-10-20 | Die temperature sensors |
| PCT/EP2007/061099 WO2008046866A1 (en) | 2006-10-20 | 2007-10-17 | Die temperature sensors |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010507085A JP2010507085A (ja) | 2010-03-04 |
| JP2010507085A5 true JP2010507085A5 (enExample) | 2010-12-02 |
| JP5358446B2 JP5358446B2 (ja) | 2013-12-04 |
Family
ID=38973621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009532800A Expired - Fee Related JP5358446B2 (ja) | 2006-10-20 | 2007-10-17 | ダイ温度センサ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7718967B2 (enExample) |
| EP (1) | EP2084502B1 (enExample) |
| JP (1) | JP5358446B2 (enExample) |
| CN (1) | CN101568813B (enExample) |
| WO (1) | WO2008046866A1 (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7807972B2 (en) * | 2005-01-26 | 2010-10-05 | Analog Devices, Inc. | Radiation sensor with cap and optical elements |
| US8487260B2 (en) * | 2005-01-26 | 2013-07-16 | Analog Devices, Inc. | Sensor |
| CN101326639B (zh) * | 2005-12-06 | 2014-01-22 | 意法半导体有限公司 | 集成电路中的电阻器 |
| US7432729B2 (en) * | 2006-01-10 | 2008-10-07 | Freescale Semiconductor, Inc. | Methods of testing electronic devices |
| DE102007024902B8 (de) * | 2007-05-29 | 2010-12-30 | Pyreos Ltd. | Vorrichtung mit Membranstruktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung |
| US8523427B2 (en) * | 2008-02-27 | 2013-09-03 | Analog Devices, Inc. | Sensor device with improved sensitivity to temperature variation in a semiconductor substrate |
| FR2934679B1 (fr) * | 2008-07-29 | 2010-09-24 | Ulis | Dispositif et procede de detection d'un rayonnement infrarouge au moyen d'une matrice de bolometres resistifs. |
| JP2011027652A (ja) * | 2009-07-28 | 2011-02-10 | Panasonic Electric Works Co Ltd | 赤外線センサ |
| US8304850B2 (en) * | 2009-12-22 | 2012-11-06 | Texas Instruments Incorporated | Integrated infrared sensors with optical elements, and methods |
| EP2363887A1 (en) * | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Focal plane array and method for manufacturing the same |
| US8848374B2 (en) * | 2010-06-30 | 2014-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for dissipating heat away from a resistor having neighboring devices and interconnects |
| CN102384790B (zh) * | 2010-08-30 | 2013-04-24 | 中国科学院微电子研究所 | 热电堆红外传感器及其制作方法 |
| FR2966595B1 (fr) * | 2010-10-26 | 2013-01-25 | Commissariat Energie Atomique | Dispositif de detection d'un rayonnement electromagnetique. |
| EP2677288A4 (en) * | 2011-02-18 | 2017-12-13 | Nec Corporation | Infrared detection sensor array and infrared detection device |
| JP6152377B2 (ja) * | 2011-05-03 | 2017-06-21 | ヴィシェイ デール エレクトロニクス エルエルシー | 電気部品用ヒートスプレッダ |
| JP5853476B2 (ja) * | 2011-08-04 | 2016-02-09 | セイコーエプソン株式会社 | 赤外線検出素子及び電子機器 |
| FR2983297B1 (fr) * | 2011-11-29 | 2015-07-17 | Commissariat Energie Atomique | Detecteur infrarouge a base de micro-planches bolometriques suspendues |
| US8975329B2 (en) | 2011-12-02 | 2015-03-10 | Sabic Global Technologies B.V. | Poly(phenylene ether) articles and compositions |
| DE102012200384B4 (de) * | 2011-12-29 | 2018-03-15 | Continental Automotive Gmbh | Auf einem Träger angeordnete Schaltungsanordnung mit Temperaturüberwachung und Verfahren zum Erkennen einer Übertemperatur |
| US8816280B2 (en) | 2012-03-21 | 2014-08-26 | Analog Devices, Inc. | Infrared sensor |
| US9559162B2 (en) | 2013-06-19 | 2017-01-31 | Globalfoundries Inc. | Thermoresistance sensor structure for integrated circuits and method of making |
| JP6167926B2 (ja) * | 2014-02-11 | 2017-07-26 | 株式会社デンソー | 赤外線検出装置 |
| US9227839B2 (en) * | 2014-05-06 | 2016-01-05 | Raytheon Company | Wafer level packaged infrared (IR) focal plane array (FPA) with evanescent wave coupling |
| EP3035015B1 (en) * | 2014-12-15 | 2017-04-12 | Melexis Technologies NV | Ir sensor for ir sensing based on power control |
| HUE066244T2 (hu) | 2015-08-07 | 2024-07-28 | Vishay Dale Electronics Llc | Formázott testtel rendelkezõ villamos eszköz nagyfeszültségû alkalmazásokhoz és annak gyártási eljárása |
| CN105509896A (zh) * | 2015-12-31 | 2016-04-20 | 中国科学院光电研究院 | 一种大气下行长波辐射测量人工靶标及其制作方法 |
| US10128302B2 (en) * | 2016-01-28 | 2018-11-13 | Ams Sensors Uk Limited | IR detector array device |
| CN107024294B (zh) * | 2016-01-29 | 2020-01-03 | 苏州普源精电科技有限公司 | 一种多通道芯片温度测量电路及方法 |
| US11211305B2 (en) | 2016-04-01 | 2021-12-28 | Texas Instruments Incorporated | Apparatus and method to support thermal management of semiconductor-based components |
| CN105784126A (zh) * | 2016-04-15 | 2016-07-20 | 中国科学院上海技术物理研究所 | 一种基于二极管测温的红外探测器组件多路温度监测系统 |
| US10861796B2 (en) | 2016-05-10 | 2020-12-08 | Texas Instruments Incorporated | Floating die package |
| US10179730B2 (en) * | 2016-12-08 | 2019-01-15 | Texas Instruments Incorporated | Electronic sensors with sensor die in package structure cavity |
| US10074639B2 (en) | 2016-12-30 | 2018-09-11 | Texas Instruments Incorporated | Isolator integrated circuits with package structure cavity and fabrication methods |
| DE102017206388A1 (de) * | 2017-04-13 | 2018-10-18 | Robert Bosch Gmbh | Verfahren zum Schutz einer MEMS-Einheit vor Infrarot-Untersuchungen sowie MEMS-Einheit |
| DE102017206386A1 (de) * | 2017-04-13 | 2018-10-18 | Robert Bosch Gmbh | Verfahren zum Schutz einer MEMS-Einheit vor Infrarot-Untersuchungen sowie MEMS-Einheit |
| WO2019053759A1 (ja) * | 2017-09-12 | 2019-03-21 | 株式会社芝浦電子 | 赤外線温度センサ |
| CN109140785B (zh) * | 2018-07-10 | 2019-07-12 | 江苏省精创电气股份有限公司 | 一种自动识别空气源热水器中温度传感器位置的方法 |
| DE102019118545B3 (de) * | 2019-07-09 | 2020-10-29 | Infineon Technologies Ag | Sensorvorrichtung mit Hilfsstruktur zum Kalibrieren der Sensorvorrichtung |
| CN110536085B (zh) * | 2019-08-20 | 2022-03-11 | 北京安酷智芯科技有限公司 | 一种读出电路及图像校正方法 |
| KR20220133214A (ko) * | 2020-02-06 | 2022-10-04 | 트리나미엑스 게엠베하 | 차동 이중 검출기를 통한 온도 검출 |
| CN113432737A (zh) * | 2020-03-19 | 2021-09-24 | 长鑫存储技术有限公司 | 晶圆卡盘温度量测及温度校准的方法和温度量测系统 |
| CN113720474B (zh) * | 2021-03-26 | 2022-11-15 | 北京北方高业科技有限公司 | 基于cmos工艺的红外探测器镜像像元和红外探测器 |
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| JP2009079946A (ja) * | 2007-09-26 | 2009-04-16 | Seiko Npc Corp | サーモパイル型赤外線センサ |
-
2006
- 2006-10-20 US US11/584,121 patent/US7718967B2/en not_active Expired - Lifetime
-
2007
- 2007-10-17 WO PCT/EP2007/061099 patent/WO2008046866A1/en not_active Ceased
- 2007-10-17 CN CN2007800469173A patent/CN101568813B/zh not_active Expired - Fee Related
- 2007-10-17 EP EP07821464.0A patent/EP2084502B1/en not_active Not-in-force
- 2007-10-17 JP JP2009532800A patent/JP5358446B2/ja not_active Expired - Fee Related
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