JP2010278120A5 - - Google Patents

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Publication number
JP2010278120A5
JP2010278120A5 JP2009127576A JP2009127576A JP2010278120A5 JP 2010278120 A5 JP2010278120 A5 JP 2010278120A5 JP 2009127576 A JP2009127576 A JP 2009127576A JP 2009127576 A JP2009127576 A JP 2009127576A JP 2010278120 A5 JP2010278120 A5 JP 2010278120A5
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JP
Japan
Prior art keywords
silicon carbide
carbide layer
semiconductor device
manufacturing
ratio
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Application number
JP2009127576A
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English (en)
Japanese (ja)
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JP5436046B2 (ja
JP2010278120A (ja
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Priority to JP2009127576A priority Critical patent/JP5436046B2/ja
Priority claimed from JP2009127576A external-priority patent/JP5436046B2/ja
Publication of JP2010278120A publication Critical patent/JP2010278120A/ja
Publication of JP2010278120A5 publication Critical patent/JP2010278120A5/ja
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Publication of JP5436046B2 publication Critical patent/JP5436046B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009127576A 2009-05-27 2009-05-27 炭化珪素半導体装置の製造方法 Expired - Fee Related JP5436046B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009127576A JP5436046B2 (ja) 2009-05-27 2009-05-27 炭化珪素半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009127576A JP5436046B2 (ja) 2009-05-27 2009-05-27 炭化珪素半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010278120A JP2010278120A (ja) 2010-12-09
JP2010278120A5 true JP2010278120A5 (cg-RX-API-DMAC7.html) 2011-12-22
JP5436046B2 JP5436046B2 (ja) 2014-03-05

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ID=43424838

Family Applications (1)

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JP2009127576A Expired - Fee Related JP5436046B2 (ja) 2009-05-27 2009-05-27 炭化珪素半導体装置の製造方法

Country Status (1)

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JP (1) JP5436046B2 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4403677A3 (en) 2019-08-06 2024-08-21 Kwansei Gakuin Educational Foundation Sic seed crystal and method for producing same, sic ingot produced by growing said sic seed crystal and method for producing same, and sic wafer produced from said sic ingot and sic wafer with epitaxial film and methods respectively for producing said sic wafer and said sic wafer with epitaxial film
EP4012079B1 (en) * 2019-08-06 2025-10-15 Kwansei Gakuin Educational Foundation Method for producing a sic substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11162850A (ja) * 1997-08-27 1999-06-18 Matsushita Electric Ind Co Ltd 炭化珪素基板およびその製造方法、並びに炭化珪素基板を用いた半導体素子
JP2007269627A (ja) * 2002-03-19 2007-10-18 Central Res Inst Of Electric Power Ind 基板から継続するマイクロパイプを低減させるＳｉＣ結晶の製造方法およびＳｉＣ結晶、ＳｉＣ単結晶膜、ＳｉＣ半導体素子、ＳｉＣ単結晶基板および電子デバイス、ならびにＳｉＣバルク結晶の製造方法
JP4100070B2 (ja) * 2002-07-05 2008-06-11 トヨタ自動車株式会社 半導体装置の製造方法
JP4732025B2 (ja) * 2004-08-19 2011-07-27 東北電力株式会社 炭化珪素薄膜の製造方法
JP4954654B2 (ja) * 2006-09-21 2012-06-20 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP2008112834A (ja) * 2006-10-30 2008-05-15 Sumitomo Electric Ind Ltd 炭化ケイ素半導体装置の製造方法
JP4853364B2 (ja) * 2007-04-11 2012-01-11 トヨタ自動車株式会社 ＳｉＣ単結晶エピタキシャル薄膜の成長方法

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