JP2010258147A - プリント配線板の製造方法 - Google Patents
プリント配線板の製造方法 Download PDFInfo
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- JP2010258147A JP2010258147A JP2009105100A JP2009105100A JP2010258147A JP 2010258147 A JP2010258147 A JP 2010258147A JP 2009105100 A JP2009105100 A JP 2009105100A JP 2009105100 A JP2009105100 A JP 2009105100A JP 2010258147 A JP2010258147 A JP 2010258147A
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- resin composition
- solder resist
- resist layer
- opening
- manufactured
- Prior art date
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- JNCRKOQSRHDNIO-UHFFFAOYSA-N [4-[(4-cyanato-3,5-dimethylphenyl)methyl]-2,6-dimethylphenyl] cyanate Chemical compound CC1=C(OC#N)C(C)=CC(CC=2C=C(C)C(OC#N)=C(C)C=2)=C1 JNCRKOQSRHDNIO-UHFFFAOYSA-N 0.000 description 1
- SIZDMAYTWUINIG-UHFFFAOYSA-N [4-[1-(4-cyanatophenyl)ethyl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C)C1=CC=C(OC#N)C=C1 SIZDMAYTWUINIG-UHFFFAOYSA-N 0.000 description 1
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- TWSOFXCPBRATKD-UHFFFAOYSA-N [diphenyl-(triphenylsilylamino)silyl]benzene Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)N[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 TWSOFXCPBRATKD-UHFFFAOYSA-N 0.000 description 1
- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 description 1
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- 125000001931 aliphatic group Chemical group 0.000 description 1
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- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
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- 235000019286 ammonium lactate Nutrition 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
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- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- RZOBLYBZQXQGFY-HSHFZTNMSA-N azanium;(2r)-2-hydroxypropanoate Chemical compound [NH4+].C[C@@H](O)C([O-])=O RZOBLYBZQXQGFY-HSHFZTNMSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
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- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- VYHBFRJRBHMIQZ-UHFFFAOYSA-N bis[4-(diethylamino)phenyl]methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=C(N(CC)CC)C=C1 VYHBFRJRBHMIQZ-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
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- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 235000010354 butylated hydroxytoluene Nutrition 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
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- 150000001869 cobalt compounds Chemical class 0.000 description 1
- FCEOGYWNOSBEPV-FDGPNNRMSA-N cobalt;(z)-4-hydroxypent-3-en-2-one Chemical compound [Co].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FCEOGYWNOSBEPV-FDGPNNRMSA-N 0.000 description 1
- JUPWRUDTZGBNEX-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical compound [Co].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O JUPWRUDTZGBNEX-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
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- 239000013256 coordination polymer Substances 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- ZKXWKVVCCTZOLD-FDGPNNRMSA-N copper;(z)-4-hydroxypent-3-en-2-one Chemical compound [Cu].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O ZKXWKVVCCTZOLD-FDGPNNRMSA-N 0.000 description 1
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- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
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- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- HTDKEJXHILZNPP-UHFFFAOYSA-N dioctyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OCCCCCCCC HTDKEJXHILZNPP-UHFFFAOYSA-N 0.000 description 1
- XMQYIPNJVLNWOE-UHFFFAOYSA-N dioctyl hydrogen phosphite Chemical compound CCCCCCCCOP(O)OCCCCCCCC XMQYIPNJVLNWOE-UHFFFAOYSA-N 0.000 description 1
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical class C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- VTIXMGZYGRZMAW-UHFFFAOYSA-N ditridecyl hydrogen phosphite Chemical compound CCCCCCCCCCCCCOP(O)OCCCCCCCCCCCCC VTIXMGZYGRZMAW-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004761 kevlar Substances 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- QDLAGTHXVHQKRE-UHFFFAOYSA-N lichenxanthone Natural products COC1=CC(O)=C2C(=O)C3=C(C)C=C(OC)C=C3OC2=C1 QDLAGTHXVHQKRE-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
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- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
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- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
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- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical class CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PRCNQQRRDGMPKS-UHFFFAOYSA-N pentane-2,4-dione;zinc Chemical compound [Zn].CC(=O)CC(C)=O.CC(=O)CC(C)=O PRCNQQRRDGMPKS-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- WZESLRDFSNLECD-UHFFFAOYSA-N phenyl prop-2-eneperoxoate Chemical compound C=CC(=O)OOC1=CC=CC=C1 WZESLRDFSNLECD-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- QCTJRYGLPAFRMS-UHFFFAOYSA-N prop-2-enoic acid;1,3,5-triazine-2,4,6-triamine Chemical class OC(=O)C=C.NC1=NC(N)=NC(N)=N1 QCTJRYGLPAFRMS-UHFFFAOYSA-N 0.000 description 1
- JTQPTNQXCUMDRK-UHFFFAOYSA-N propan-2-olate;titanium(2+) Chemical compound CC(C)O[Ti]OC(C)C JTQPTNQXCUMDRK-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
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- 238000007788 roughening Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- CMXPERZAMAQXSF-UHFFFAOYSA-M sodium;1,4-bis(2-ethylhexoxy)-1,4-dioxobutane-2-sulfonate;1,8-dihydroxyanthracene-9,10-dione Chemical compound [Na+].O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=CC=C2O.CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC CMXPERZAMAQXSF-UHFFFAOYSA-M 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- BJQWBACJIAKDTJ-UHFFFAOYSA-N tetrabutylphosphanium Chemical class CCCC[P+](CCCC)(CCCC)CCCC BJQWBACJIAKDTJ-UHFFFAOYSA-N 0.000 description 1
- SZWHXXNVLACKBV-UHFFFAOYSA-N tetraethylphosphanium Chemical class CC[P+](CC)(CC)CC SZWHXXNVLACKBV-UHFFFAOYSA-N 0.000 description 1
- BXYHVFRRNNWPMB-UHFFFAOYSA-N tetramethylphosphanium Chemical class C[P+](C)(C)C BXYHVFRRNNWPMB-UHFFFAOYSA-N 0.000 description 1
- XOGCTUKDUDAZKA-UHFFFAOYSA-N tetrapropylphosphanium Chemical class CCC[P+](CCC)(CCC)CCC XOGCTUKDUDAZKA-UHFFFAOYSA-N 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical class SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- VMYXFDVIMUEKNP-UHFFFAOYSA-N trimethoxy-[5-(oxiran-2-yl)pentyl]silane Chemical compound CO[Si](OC)(OC)CCCCCC1CO1 VMYXFDVIMUEKNP-UHFFFAOYSA-N 0.000 description 1
- NRZWQKGABZFFKE-UHFFFAOYSA-N trimethylsulfonium Chemical class C[S+](C)C NRZWQKGABZFFKE-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical class O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
- H05K3/4617—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination characterized by laminating only or mainly similar single-sided circuit boards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/003—Apparatus or processes specially adapted for manufacturing resistors using lithography, e.g. photolithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- H05K3/3452—Solder masks
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09554—Via connected to metal substrate
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Abstract
【解決手段】回路基板の両面にソルダーレジスト層を形成し、一方の面に形成されたソルダーレジスト層における開口部形成をフォトリソグラフィーにより行い、他方の面に形成されたソルダーレジスト層における開口部形成をレーザー照射により行うことを特徴とするプリント配線板の製造方法。回路基板の一方の面に形成するソルダーレジスト層は光硬化性樹脂組成物で形成し、他方の面に形成するソルダーレジスト層は熱硬化性樹脂組成物で形成する。
【選択図】なし
Description
[2]開口部形成をフォトリソグラフィーにより行うソルダーレジスト層が光硬化性樹脂組成物から成り、開口部形成をレーザーにより行うソルダーレジスト層が熱硬化性樹脂組成物からなる、上記[1]記載の方法。
[3]回路基板の一方の面と他方の面に形成するソルダーレジスト層をともに支持体上に樹脂組成物層を形成した樹脂組成物フィルムを用いて形成する、上記[2]記載の方法。
[4]真空ラミネーターを用いるラミネート処理とこれに続く熱プレスによる平坦化処理によって、回路基板の一方の面と他方の面に形成するソルダーレジスト層を一括して形成する上記[3]記載の方法。
[5]光硬化性樹脂組成物及び熱硬化性樹脂組成物の両方の最低溶融温度が80℃〜160℃の範囲にあり、かつ両者の最低溶融粘度の比が0.01〜100である上記[4]記載の方法。
[6]光硬化性樹脂組成物からなるソルダーレジスト層のフォトリソグラフィーによる開口部形成後、光硬化性樹脂組成物からなるソルダーレジスト層のベーク工程と熱硬化性樹脂組成物からなるソルダーレジスト層の熱硬化工程を同時に行い、その後、熱硬化性樹脂組成物からなるソルダーレジスト層にレーザーで開口部を形成する、上記[2]〜[5]のいずれかに記載の方法。
[7]プリント配線板が、半導体パッケージ基板である上記[1]〜[6]のいずれかに記載の方法。
[8]プリント配線板が、熱硬化性樹脂組成物からなるソルダーレジスト層側に半導体チップが搭載される半導体パッケージ基板である上記[2]〜[6]のいずれかに記載の方法。
本発明のプリント配線板の製造方法は、回路基板の両面にソルダーレジスト層を形成し、一方の面に形成されたソルダーレジスト層における開口部形成をフォトリソグラフィーにより行い、他方の面に形成されたソルダーレジスト層における開口部形成をレーザー照射により行うことが主たる特徴である。
エチルカルビトールアセテート411部、o−クレゾールノボラック型エポキシ樹脂(エポキシ当量215、1分子中に平均して6個のフェノール核を有する)430部、およびアクリル酸144部をフラスコに入れ、撹拌下120℃で10時間反応させた。いったん反応生成物を室温まで冷却し、無水テトラヒドロフタル酸288.8部を加え、80℃に加熱して4時間撹拌した。再びこの反応生成物を室温まで冷却し、グリシジルメタクリレート105部およびプロピレングリコールメチルエーテルアセテート161部を加え、撹拌下110℃で6時間反応させた。この反応生成物を室温まで冷却し、樹脂溶液(A)(不揮発分約62.9%、酸価約70[KOHmg/g])を得た。
合成例で示した樹脂溶液(A)100部、ビフェニル型エポキシ樹脂(エポキシ当量291、日本化薬(株)製「NC−3000H」)の固形分70%のエチルカルビトールアセテート溶液18部、ジシクロペンタジエン型エポキシ樹脂(エポキシ当量277、DIC(株)製「EPICLON HP−7200H」)の固形分70%のエチルカルビトールアセテート溶液18部、光重合開始剤(チバ・スペシャリティー・ケミカルズ(株)製「2−メチル−[4−(メチルチオ)フェニル]−2−モルホリノ−1−プロパノン」)7部、光増感剤(日本化薬(株)製「2,4−ジエチルチオキサントン」)1部、アクリルモノマー(東亞合成(株)製「M−310」)16部、硬化促進剤(ジャパンエポキシレジン(株)製「エピキュアDICY−7」)0.5部、微粉シリカ(日本アエロジル(株)製「アエロジル#200」)2部、球状シリカ(扶桑化学(株)製「クォートロンSP−1」)10部、顔料(東洋インキ製造(株)「FG7351」)0.5部を混合し、高速回転ミキサーで均一に分散して、光硬化性樹脂組成物ワニスを作製した。
合成例で示した樹脂溶液(A)100部、液状ビスフエノールF型エポキシ樹脂(エポキシ当量170、ジャパンエポキシレジン(株)製「エピコート807」)13部、ジシクロペンタジエン型エポキシ樹脂(エポキシ当量277、DIC(株)製「EPICLON HP−7200H」)の固形分70%のエチルカルビトールアセテート溶液12部、光重合開始剤(チバ・スペシャリティー・ケミカルズ(株)製「2−メチル−[4−(メチルチオ)フェニル]−2−モルホリノ−1−プロパノン」)7部、光増感剤(日本化薬(株)製「2,4−ジエチルチオキサントン」)1部、アクリルモノマー(東亞合成(株)製「M−310」)16部、硬化促進剤(ジャパンエポキシレジン(株)製「エピキュアDICY−7」)0.5部、微粉シリカ(日本アエロジル(株)製「アエロジル#200」)2部、球状シリカ(扶桑化学(株)製「クォートロンSP−1」)10部、顔料(東洋インキ製造(株)「FG7351」)0.5部を混合し、高速回転ミキサーで均一に分散して、光硬化性樹脂組成物ワニスを作製した。
液状ビスフェノールA型エポキシ樹脂(エポキシ当量180、ジャパンエポキシレジン(株)製「エピコート828EL」)26部と、ナフタレン型4官能エポキシ樹脂(エポキシ当量163、DIC(株)製「HP4700」)20部とをメチルエチルケトン15部とシクロヘキサノン15部の混合溶媒に撹拌しながら加熱溶解させた。そこへ、フェノールノボラック系硬化剤(DIC(株)製「TD2090」、フェノール性水酸基当量105)の固形分60%のメチルエチルケトン溶液25部、硬化促進剤(四国化成工業(株)製、「2E4MZ」)0.1部、球形シリカ(平均粒径0.5μm、「SOC2」(株)アドマテックス製)45部、ポリビニルブチラール樹脂溶液(積水化学工業(株)製「KS1」の固形分15%のエタノールとトルエンの1:1溶液)20部、フェノキシ樹脂溶液(東都化成(株)製「FX293」の固形分40%のメチルエチルケトンとシクロヘキサノン2:3溶液)23部を混合し、高速回転ミキサーで均一に分散して、熱硬化性樹脂組成物ワニスを作製した。
液状ビスフェノールA型エポキシ樹脂(エポキシ当量180、ジャパンエポキシレジン(株)製「エピコート828EL」)26部と、ナフタレン型4官能エポキシ樹脂(エポキシ当量163、DIC(株)製「HP4700」)20部とをメチルエチルケトン15部とシクロヘキサノン15部の混合溶媒に撹拌しながら加熱溶解させた。そこへ、フェノールノボラック系硬化剤(DIC(株)製「TD2090」、フェノール性水酸基当量105)の固形分60%のメチルエチルケトン溶液25部、硬化促進剤(四国化成工業(株)製、「2E4MZ」)0.5部、球形シリカ(平均粒径0.5μm、「SOC2」(株)アドマテックス製)45部、ポリビニルブチラール樹脂溶液(積水化学工業(株)製「KS1」の固形分15%のエタノールとトルエンの1:1溶液)40部、フェノキシ樹脂溶液(東都化成(株)製「FX293」の固形分40%のメチルエチルケトンとシクロヘキサノン2:3溶液)46部を混合し、高速回転ミキサーで均一に分散して、熱硬化性樹脂組成物ワニスを作製した。
上記光硬化性樹脂組成物フィルム1及び上記熱硬化性樹脂組成物フィルム3(各々507×336mmサイズ)の保護フィルムを剥離し、これらを、名機製作所製真空ラミネーターにより、温度70℃、圧力7kgf/cm2、気圧5mmHg以下の条件で、回路形成された銅張積層板(回路導体厚18μm、外形サイズ510×340mm、厚さ0.2mm)の各々片面に配置し、両面を同時にラミネートした。さらに連続的に温度70℃、圧力5kgf/cm2の条件でSUS鏡板による熱プレスを行った。熱プレス後のPETフィルム端面から銅張積層板外周端への光硬化性樹脂組成物フィルム1の樹脂のはみ出しは0.67mm、熱硬化性樹脂組成物フィルム3の樹脂のはみ出しは0.18mmであった。
上記光硬化性樹脂組成物フィルム1を2枚用意し、両方の保護フィルムを剥離して、回路形成された銅張積層板(回路導体厚18μm、外形サイズ510×340mm、厚さ0.2mm)の両面に仮付けし、ニチゴー・モートン(株)製バキュームアップリケーターにより、70℃で熱圧着した。次に片面に直径60μmの円状パターンを施したフォトマスクを固定して高圧水銀灯露光装置を用いて200mJ/cm2露光して、光硬化を行った。さらにもう一方の面には直径600μmの円状パターンを施したフォトマスクを固定して同様に光硬化を行った。両面のPETフィルムを外した後、0.85%水酸化ナトリウム水溶液(液温30℃)を現像液に用いて、2kg/cm2のスプレー圧で60秒間現像し、未露光部分を溶解除去し、開口部を形成した。その後、露光部分を高圧水銀灯露光装置を用いて1000mJ/cm2露光して、光硬化し、さらに180℃で60分間加熱して熱硬化を行った。その後、上記実施例1と同様に熱衝撃試験を行い、クラックの発生の有無を調べた。直径600μmの開口をもつ側ではクラックは観察されなかったが、直径60μmの開口部の付近でクラックが観察された。
上記熱硬化性樹脂組成物フィルム3を2枚用意し、両方の保護フィルムを剥離して、回路形成された銅張積層板(回路導体厚18μm、外形サイズ510×340mm、厚さ0.2mm)の両面へ仮付けし、(株)名機製作所製真空ラミネーターにより、温度100℃、圧力7kgf/cm2、気圧5mmHg以下の条件で両面にラミネートし、さらに連続的に温度100℃、圧力5kgf/cm2の条件でSUS鏡板による熱プレスを行った。その後、PETフィルムを剥離後、180℃で60分間加熱して熱硬化を行った。室温まで冷却後、片面に三菱電機(株)製炭酸ガスレーザー装置(ML605GTWII−P)により、レーザー光の波長9.3μm、エネルギー2.50mJ、パルス幅4μs、ショット数1回なる条件にて開口を行い、ビアホール(トップ径60μm)を形成した。さらにもう一方の面にはトップ径600μmの開口を目指して、レーザー光の波長9.3μm、エネルギー2.50mJ、パルス幅4μsなる条件で10ショット照射を行ったが目的とする開口を得ることは出来なかった。その後上記実施例1と同様に熱衝撃試験を行い、クラックの発生の有無を調べた。どちらの面のソルダーレジストにもクラックの発生は確認されなかった。
上記光硬化性樹脂組成物フィルム2及び上記熱硬化性樹脂組成物フィルム4のそれぞれの保護フィルムを剥離して、回路形成された銅張積層板(回路導体厚18μm、外形サイズ510×340mm、厚さ0.2mm)の各々片面に配置し、名機製作所製真空ラミネーターにより、温度70℃、圧力7kgf/cm2、気圧5mmHg以下の条件で両面を同時にラミネートした。さらに連続的に温度70℃、圧力5kgf/cm2の条件でSUS鏡板による熱プレスを行った。熱硬化性樹脂組成物フィルム4の樹脂のはみ出しは0.17mm、光硬化性樹脂組成物フィルム2の樹脂のはみ出しは3.10mmであった。樹脂のはみ出しが大きいため、適切にソルダーレジストを形成できなかった時点で実験を終了した。
Claims (8)
- 回路基板の両面にソルダーレジスト層を形成し、一方の面に形成されたソルダーレジスト層における開口部形成をフォトリソグラフィーにより行い、他方の面に形成されたソルダーレジスト層における開口部形成をレーザーにより行うことを特徴とするプリント配線板の製造方法。
- 開口部形成をフォトリソグラフィーにより行うソルダーレジスト層が光硬化性樹脂組成物から成り、開口部形成をレーザーにより行うソルダーレジスト層が熱硬化性樹脂組成物からなる、請求項1記載の方法。
- 回路基板の一方の面と他方の面に形成するソルダーレジスト層をともに支持体上に樹脂組成物層を形成した樹脂組成物フィルムを用いて形成する、請求項2記載の方法。
- 真空ラミネーターを用いるラミネート処理とこれに続く熱プレスによる平坦化処理によって、回路基板の一方の面と他方の面に形成するソルダーレジスト層を一括して形成する請求項3記載の方法。
- 光硬化性樹脂組成物及び熱硬化性樹脂組成物の両方の最低溶融温度が80℃〜160℃の範囲にあり、かつ両者の最低溶融粘度の比が0.01〜100である請求項4記載の方法。
- 光硬化性樹脂組成物からなるソルダーレジスト層のフォトリソグラフィーによる開口部形成後、光硬化性樹脂組成物からなるソルダーレジスト層のベーク工程と熱硬化性樹脂組成物からなるソルダーレジスト層の熱硬化工程を同時に行い、その後、熱硬化性樹脂組成物からなるソルダーレジスト層にレーザーで開口部を形成する、請求項2〜5のいずれか1項に記載の方法。
- プリント配線板が、半導体パッケージ基板である請求項1〜6のいずれか1項に記載の方法。
- プリント配線板が、熱硬化性樹脂組成物からなるソルダーレジスト層側に半導体チップが搭載される半導体パッケージ基板である請求項2〜6のいずれか1項に記載の方法。
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KR20150128614A (ko) * | 2014-05-09 | 2015-11-18 | 다이요 잉키 세이조 가부시키가이샤 | 경화성 수지 조성물, 드라이 필름 및 프린트 배선판 |
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KR102275348B1 (ko) | 2014-05-09 | 2021-07-09 | 다이요 잉키 세이조 가부시키가이샤 | 경화성 수지 조성물, 드라이 필름 및 프린트 배선판 |
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JP5412936B2 (ja) | 2014-02-12 |
KR101712338B1 (ko) | 2017-03-06 |
KR20100117035A (ko) | 2010-11-02 |
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