JP2010251733A5 - - Google Patents

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Publication number
JP2010251733A5
JP2010251733A5 JP2010068657A JP2010068657A JP2010251733A5 JP 2010251733 A5 JP2010251733 A5 JP 2010251733A5 JP 2010068657 A JP2010068657 A JP 2010068657A JP 2010068657 A JP2010068657 A JP 2010068657A JP 2010251733 A5 JP2010251733 A5 JP 2010251733A5
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JP
Japan
Prior art keywords
film
semiconductor film
resist mask
etching
semiconductor
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Application number
JP2010068657A
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English (en)
Japanese (ja)
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JP2010251733A (ja
JP5539765B2 (ja
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Priority to JP2010068657A priority Critical patent/JP5539765B2/ja
Priority claimed from JP2010068657A external-priority patent/JP5539765B2/ja
Publication of JP2010251733A publication Critical patent/JP2010251733A/ja
Publication of JP2010251733A5 publication Critical patent/JP2010251733A5/ja
Application granted granted Critical
Publication of JP5539765B2 publication Critical patent/JP5539765B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010068657A 2009-03-26 2010-03-24 トランジスタの作製方法 Expired - Fee Related JP5539765B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010068657A JP5539765B2 (ja) 2009-03-26 2010-03-24 トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009075573 2009-03-26
JP2009075573 2009-03-26
JP2010068657A JP5539765B2 (ja) 2009-03-26 2010-03-24 トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2010251733A JP2010251733A (ja) 2010-11-04
JP2010251733A5 true JP2010251733A5 (enExample) 2013-03-28
JP5539765B2 JP5539765B2 (ja) 2014-07-02

Family

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Family Applications (1)

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JP2010068657A Expired - Fee Related JP5539765B2 (ja) 2009-03-26 2010-03-24 トランジスタの作製方法

Country Status (2)

Country Link
US (1) US8372700B2 (enExample)
JP (1) JP5539765B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6033071B2 (ja) * 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 半導体装置
KR102373329B1 (ko) * 2015-04-30 2022-03-11 삼성디스플레이 주식회사 유기 발광 표시 장치
JP6353151B1 (ja) * 2017-11-15 2018-07-04 タイズ株式会社 無機ｅｌシートを具備したネームプレート
EP4517834A4 (en) * 2022-10-28 2025-10-29 Boe Technology Group Co Ltd THIN-FILM TRANSISTOR DEVICE AND ITS MANUFACTURING PROCESS, COMPOUND ETCHING SOLUTION AND MATRIX SUBSTRATE

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JPS6484669A (en) * 1987-09-26 1989-03-29 Casio Computer Co Ltd Thin film transistor
JPH03161938A (ja) 1989-11-20 1991-07-11 Seiko Instr Inc 薄膜トランジスタの製造方法
DE69635239T2 (de) * 1995-11-21 2006-07-06 Samsung Electronics Co., Ltd., Suwon Verfahren zur Herstellung einer Flüssigkristall-Anzeige
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US7223643B2 (en) * 2000-08-11 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
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JP5503995B2 (ja) * 2009-02-13 2014-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
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